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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112101 (2023)
https://doi.org/10.1063/5.0159560
Published: September 2023
View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN
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Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
https://doi.org/10.1063/5.0161934
Published: September 2023
View article titled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> power diodes
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Journal Articles

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris. G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 079901 (2023)
https://doi.org/10.1063/5.0169548
Published: August 2023
View article titled, Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]
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Journal Articles

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Wan Ying Ho, Cameron W. Johnson, Tanay Tak, Mylène Sauty, Yi Chao Chow, Shuji Nakamura, Andreas Schmid, Jacques Peretti, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 031101 (2023)
https://doi.org/10.1063/5.0153947
Published: July 2023
View article titled, Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)
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Includes: Supplementary data
Journal Articles

Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers

S. K. Khamari, S. Arslan, C. Zink, S. J. Sweeney, P. Crump
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 211101 (2023)
https://doi.org/10.1063/5.0149986
Published: May 2023
View article titled, Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
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Journal Articles

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212103 (2023)
https://doi.org/10.1063/5.0150029
Published: May 2023
View article titled, Measurement of minority carrier diffusion length in <em>p</em>-GaN using electron emission spectroscopy (EES)
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Includes: Supplementary data
Journal Articles

Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration

Ke Sun, Yinzuo Qian, Zhenxing Lv, Shengli Qi, Shengjun Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 202104 (2023)
https://doi.org/10.1063/5.0148796
Published: May 2023
View article titled, Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration
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Journal Articles

Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

Christian Dorfer, Marianne E. Bathen, Salvatore Race, Piyush Kumar, Alexander Tsibizov, Judith Woerle, Ulrike Grossner
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 183503 (2023)
https://doi.org/10.1063/5.0142217
Published: May 2023
View article titled, Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique
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Journal Articles

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 183502 (2023)
https://doi.org/10.1063/5.0146638
Published: May 2023
View article titled, A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation
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Journal Articles

Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

S. Bonaldo, D. M. Fleetwood
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173508 (2023)
https://doi.org/10.1063/5.0147587
Published: April 2023
View article titled, Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
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Journal Articles

Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Yingzhe Wang, Xuefeng Zheng, Tian Zhu, Shaozhong Yue, Ailing Pan, Shengrui Xu, Peixian Li, Xiaohua Ma, Jincheng Zhang, Lixin Guo, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 143501 (2023)
https://doi.org/10.1063/5.0133958
Published: April 2023
View article titled, Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon
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Journal Articles

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Kunzi Liu, Li Chen, Tian Luo, Zihui Zhao, Ping Ouyang, Jiaxin Zhang, Qiushuang Chen, Biao Zhou, Shengli Qi, Houqiang Xu, Zhenhai Yang, Wei Guo, Jichun Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 241105 (2022)
https://doi.org/10.1063/5.0131013
Published: December 2022
View article titled, Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes
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Includes: Supplementary data
Journal Articles

Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

Yue-Hua Hong, Xue-Feng Zheng, Yun-Long He, Hao Zhang, Zi-Jian Yuan, Xiang-Yu Zhang, Fang Zhang, Ying-Zhe Wang, Xiao-Li Lu, Wei Mao, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 212102 (2022)
https://doi.org/10.1063/5.0128736
Published: November 2022
View article titled, Leakage current reduction in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode with p-NiO<sub>x</sub> guard ring
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Includes: Supplementary data
Journal Articles

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yanjie Li, Yamin Zhang, Lixing Zhou, Meng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 153501 (2022)
https://doi.org/10.1063/5.0107459
Published: October 2022
View article titled, Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
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Journal Articles

Fast and efficient detection of a single photon with hole-patterned superconductor microstrips

Feiyan Li, Yuqing Guo, Kangjie Liu, Labao Zhang, Qi Chen, Xiaohan Wang, Biao Zhang, Yue Dai, Jingrou Tan, Guanglong He, Yue Fei, Hao Wang, Xuecou Tu, Qingyuan Zhao, Xiaoqing Jia, Lin Kang, Jian Chen, Peiheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 122601 (2022)
https://doi.org/10.1063/5.0109206
Published: September 2022
View article titled, Fast and efficient detection of a single photon with hole-patterned superconductor microstrips
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Journal Articles

Trap state-assisted electron injection in blue quantum dot light-emitting diode

Xiangwei Qu, Jingrui Ma, Chengwei Shan, Pai Liu, Aung Ko Ko Kyaw, Xiao Wei Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 113507 (2022)
https://doi.org/10.1063/5.0104341
Published: September 2022
View article titled, Trap state-assisted electron injection in blue quantum dot light-emitting diode
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Includes: Supplementary data
Journal Articles

Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

Chang-Hao Sun, Chao Peng, Zhan-Gang Zhang, Jin-Bin Wang, Shao-Zhong Yue, Hong Zhang, Zi-Wen Chen, Xiao-Ping Ou-Yang, Zhi-Feng Lei, Xiang-Li Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072109 (2022)
https://doi.org/10.1063/5.0102366
Published: August 2022
View article titled, Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation
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Journal Articles

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Chen Jiang, Hao Liu, Jun Wang, Xiaomin Ren, Qi Wang, Zhuoliang Liu, Bojie Ma, Kai Liu, Ren Ren, Yidong Zhang, Shiwei Cai, Yongqing Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 061102 (2022)
https://doi.org/10.1063/5.0098264
Published: August 2022
View article titled, Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
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Journal Articles

Comment on “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT” [Appl. Phys. Lett. 120 , 172107 (2022)]

Klaus Thonke
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 066101 (2022)
https://doi.org/10.1063/5.0102597
Published: August 2022
View article titled, Comment on “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT” [Appl. Phys. Lett. 120 , 172107 (2022)]
Open the PDF for Comment on “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT” [Appl. Phys. Lett. 120 , 172107 (2022)] in another window
Journal Articles

Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

Shan Wu, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, Zhaohua Shen, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 242101 (2022)
https://doi.org/10.1063/5.0093514
Published: June 2022
View article titled, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN
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