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Journal Articles

Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE

Frank P. Kelly, Matthew M. Landi, Kyekyoon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
https://doi.org/10.1063/5.0260105
Published: April 2025
View articletitled, Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
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Journal Articles

High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method

Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jinping Ao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022111 (2025)
https://doi.org/10.1063/5.0238924
Published: January 2025
View articletitled, High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method
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Journal Articles

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

Editor’s Pick
Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki, Toshio Kitamura, Fumimasa Horikiri, Hajime Fujikura, Shinichiro Takatani, Tomoyoshi Mishima
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012101 (2025)
https://doi.org/10.1063/5.0242225
Published: January 2025
View articletitled, 6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma
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Journal Articles

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON

Jiawei Cui, Junjie Yang, Jingjing Yu, Teng Li, Han Yang, Xiaosen Liu, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 173503 (2024)
https://doi.org/10.1063/5.0232619
Published: October 2024
View articletitled, GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON
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Journal Articles

Transparent antenna with RCS tunability based on graphene and metasurface in S band

Heng Zhang, Yongna Zhang, Li Shao, Guanxu Liu, Zhihao Zhou, Haofei Shi, Mingxing Piao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 103501 (2024)
https://doi.org/10.1063/5.0219746
Published: September 2024
View articletitled, Transparent antenna with RCS tunability based on graphene and metasurface in S band
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Journal Articles

Multi-channel GaN varactors and their current conduction mechanisms

Wensong Zou, Jiawei Chen, Xiaoxiang Hou, Peng Xiang, Kai Cheng, Qingfeng Zhang, Jun Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032105 (2024)
https://doi.org/10.1063/5.0217767
Published: July 2024
View articletitled, Multi-channel GaN varactors and their current conduction mechanisms
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Journal Articles

3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

Editor’s Pick
Jiangbin Wan, Hengyu Wang, Chi Zhang, Yanjun Li, Ce Wang, Haoyuan Cheng, Junze Li, Na Ren, Qing Guo, Kuang Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 243504 (2024)
https://doi.org/10.1063/5.0211183
Published: June 2024
View articletitled, 3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism
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Journal Articles

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Featured
Hehe Gong, Na Sun, Tiancheng Hu, Xinxin Yu, Matthew Porter, Zineng Yang, Fangfang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Yuhao Zhang, Jiandong Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233507 (2024)
https://doi.org/10.1063/5.0211124
Published: June 2024
View articletitled, Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
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Journal Articles

On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes

Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Ailing Pan, Sijie Bu, Yuehua Hong, Jincheng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 193503 (2024)
https://doi.org/10.1063/5.0204051
Published: May 2024
View articletitled, On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes
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Journal Articles

Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173506 (2024)
https://doi.org/10.1063/5.0189890
Published: April 2024
View articletitled, Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode
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Journal Articles

Reliable operation of Cr2O3:Mg/ β -Ga2O3 p–n heterojunction diodes at 600 °C

Editor’s Pick
William A. Callahan, Kingsley Egbo, Cheng-Wei Lee, David Ginley, Ryan O'Hayre, Andriy Zakutayev
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153504 (2024)
https://doi.org/10.1063/5.0185566
Published: April 2024
View articletitled, Reliable operation of Cr2O3:Mg/ β -Ga2O3 p–n heterojunction diodes at 600 °C
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Includes: Supplementary data
Journal Articles

Time-varying coding digital double-layered Huygens' metasurface for high-efficiency harmonic frequency conversion

Feng Li, Chao Wu, Chunqiao Qiu, Quan Xu, Hongyu Zhu, Quan Li, Zhengren Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 111703 (2024)
https://doi.org/10.1063/5.0196310
Published: March 2024
View articletitled, Time-varying coding digital double-layered Huygens' metasurface for high-efficiency harmonic frequency conversion
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Journal Articles

Wideband tunable absorber breaking the trade-off between absorption efficiency and tuning range

Editor’s Pick
Wenbo Zhao, Chenxi Fan, Junming Zhao, Tian Jiang, Ke Chen, Yijun Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 241701 (2023)
https://doi.org/10.1063/5.0177601
Published: December 2023
View articletitled, Wideband tunable absorber breaking the trade-off between absorption efficiency and tuning range
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Journal Articles

Mechanism of silicon-nanowire-diode orientation in DC electric fields

Minh-Thang Hoang, Nishant Deshmukh, Amar T. Mohabir, Leonard C. Feldman, Michael A. Filler, Jerry W. Shan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 143501 (2023)
https://doi.org/10.1063/5.0165100
Published: October 2023
View articletitled, Mechanism of silicon-nanowire-diode orientation in DC electric fields
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Includes: Supplementary data
Journal Articles

A 2D quantum dot array in planar 28Si/SiGe

Editor’s Pick
F. K. Unseld, M. Meyer, M. T. Mądzik, F. Borsoi, S. L. de Snoo, S. V. Amitonov, A. Sammak, G. Scappucci, M. Veldhorst, L. M. K. Vandersypen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 084002 (2023)
https://doi.org/10.1063/5.0160847
Published: August 2023
View articletitled, A 2D quantum dot array in planar 28Si/SiGe
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Includes: Supplementary data
Journal Articles

Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes

Yu Duan, Jingshan Wang, Zhongtao Zhu, Guanxi Piao, Kazutada Ikenaga, Hiroki Tokunaga, Shuuichi Koseki, Mayank Bulsara, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212104 (2023)
https://doi.org/10.1063/5.0144898
Published: May 2023
View articletitled, Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes
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Journal Articles

Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Vishank Talesara, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Wu Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123501 (2023)
https://doi.org/10.1063/5.0135313
Published: March 2023
View articletitled, Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2
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Journal Articles

Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Keito Aoshima, Masahiro Horita, Jun Suda
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 012106 (2023)
https://doi.org/10.1063/5.0128709
Published: January 2023
View articletitled, Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation
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Journal Articles

An automated approach for consecutive tuning of quantum dot arrays

Hanwei Liu, Baochuan Wang, Ning Wang, Zhonghai Sun, Huili Yin, Haiou Li, Gang Cao, Guoping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 084002 (2022)
https://doi.org/10.1063/5.0111128
Published: August 2022
View articletitled, An automated approach for consecutive tuning of quantum dot arrays
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Includes: Supplementary data
Journal Articles

Electrical and optical properties of InSe with various interfaces

Lili Zhou, Yanhui Lv, Yue Zhao, Gang Wu, Peiyao Xiao, Jiung Cho, Miri Choi, Cormac Ó Coileáin, Ching-Ray Chang, Han-Chun Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 071603 (2022)
https://doi.org/10.1063/5.0090684
Published: August 2022
View articletitled, Electrical and optical properties of InSe with various interfaces
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Includes: Supplementary data