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Journal Articles

Periodic lateral superlattice in bonded SrTiO3/SrTiO3 twisted perovskites

M. Schmidbauer, J. Maltitz, F. Stümpel, M. Hanke, C. Richter, J. Schwarzkopf, J. Martin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101902 (2025)
https://doi.org/10.1063/5.0251478
Published: March 2025
View articletitled, Periodic lateral superlattice in bonded SrTiO3/SrTiO3 twisted perovskites
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Journal Articles

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing

Jiefei Zhu, Changjian Zhou, Qi Liu, Min Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192903 (2024)
https://doi.org/10.1063/5.0219287
Published: November 2024
View articletitled, Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing
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Journal Articles

Wafer-scale fabrication of InGaP-on-insulator for nonlinear and quantum photonic applications

Lillian Thiel, Joshua E. Castro, Trevor J. Steiner, Catherine L. Nguyen, Audrey Pechilis, Liao Duan, Nicholas Lewis, Garrett D. Cole, John E. Bowers, Galan Moody
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 131102 (2024)
https://doi.org/10.1063/5.0225747
Published: September 2024
View articletitled, Wafer-scale fabrication of InGaP-on-insulator for nonlinear and quantum photonic applications
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Journal Articles

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

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Rohan Sengupta, Brian Little, Seiji Mita, Keith Markham, J. Houston Dycus, Shane Stein, Barry Wu, Zlatko Sitar, Fred Kish, Spyridon Pavlidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062102 (2024)
https://doi.org/10.1063/5.0194526
Published: August 2024
View articletitled, Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor
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Journal Articles

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures

Hangning Shi, Jiaxin Ding, Qingcheng Qin, Ailun Yi, Jialiang Sun, Tadatomo Suga, Juemin Yi, Jianfeng Wang, Ke Xu, Min Zhou, Kai Huang, Tiangui You, Xin Ou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 192103 (2024)
https://doi.org/10.1063/5.0188656
Published: May 2024
View articletitled, Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures
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Journal Articles

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Jinlong Jiao, Ruoyun Ji, Liqiang Yao, Yingjie Rao, Shaoying Ke, Jianfang Xu, Yibo Zeng, Cheng Li, Guangyang Lin, Wei Huang, Songyan Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 121101 (2024)
https://doi.org/10.1063/5.0192394
Published: March 2024
View articletitled, InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
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Journal Articles

Heterogeneous integrated InP/SiC high-performance multilevel RRAM

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Ruyan Kang, Zehan Liu, Pengpeng Cheng, Jian Zhou, Xiaoshan Wang, Xueyi Duan, Xiaoxuan Li, Zhiyuan Zuo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 052106 (2024)
https://doi.org/10.1063/5.0187642
Published: February 2024
View articletitled, Heterogeneous integrated InP/SiC high-performance multilevel RRAM
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Includes: Supplementary data
Journal Articles

The improvement of bonding metal layers for high resolution micro-LED display application

Xiaoxiao Ji, Kefeng Wang, Haojie Zhou, Fei Wang, Luqiao Yin, Jianhua Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 241102 (2023)
https://doi.org/10.1063/5.0177351
Published: December 2023
View articletitled, The improvement of bonding metal layers for high resolution micro-LED display application
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Journal Articles

Nitrogen buffer gas pressure tuning in a micro-machined vapor cell

S. Dyer, A. McWilliam, D. Hunter, S. Ingleby, D. P. Burt, O. Sharp, F. Mirando, P. F. Griffin, E. Riis, J. P. McGilligan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 074001 (2023)
https://doi.org/10.1063/5.0153881
Published: August 2023
View articletitled, Nitrogen buffer gas pressure tuning in a micro-machined vapor cell
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Journal Articles

Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding

Xian Zhang, Xiaoyue Liu, Lin Liu, Ya Han, Heyun Tan, Liu Liu, Zhongjin Lin, Siyuan Yu, Ruijun Wang, Xinlun Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 081103 (2023)
https://doi.org/10.1063/5.0142077
Published: February 2023
View articletitled, Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding
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Journal Articles

Room temperature bonding of Au assisted by self-assembled monolayer

Kai Takeuchi, Junsha Wang, Beomjoon Kim, Tadatomo Suga, Eiji Higurashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 051603 (2023)
https://doi.org/10.1063/5.0128187
Published: February 2023
View articletitled, Room temperature bonding of Au assisted by self-assembled monolayer
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Journal Articles

A model for spectroscopic ellipsometry analysis of plasma-activated Si surfaces for direct wafer bonding

N. Rauch, E. Andersen, I. G. Vicente-Gabás, J. Duchoslav, A. Minenkov, J. Gasiorowski, C. Flötgen, K. Hingerl, H. Groiss
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 081603 (2022)
https://doi.org/10.1063/5.0101633
Published: August 2022
View articletitled, A model for spectroscopic ellipsometry analysis of plasma-activated Si surfaces for direct wafer bonding
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Includes: Supplementary data
Journal Articles

Upconversion semiconductor interfaces by wafer bonding for photovoltaic applications

Naoki Sano, Kosuke Nishigaya, Katsuaki Tanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 011601 (2022)
https://doi.org/10.1063/5.0097427
Published: July 2022
View articletitled, Upconversion semiconductor interfaces by wafer bonding for photovoltaic applications
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Journal Articles

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates

Zhe (Ashley) Jian, Christopher J Clymore, Kai Sun, Umesh Mishra, Elaheh Ahmadi
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 142101 (2022)
https://doi.org/10.1063/5.0083556
Published: April 2022
View articletitled, Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates
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Journal Articles

Thermal characterization of direct wafer bonded Si-on-SiC

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Daniel E. Field, James W. Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter M. Gammon, Vishal A. Shah, Martin Kuball
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 113503 (2022)
https://doi.org/10.1063/5.0080668
Published: March 2022
View articletitled, Thermal characterization of direct wafer bonded Si-on-SiC
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Journal Articles

Electrically injected whispering-gallery mode InGaN/GaN microdisks

K. H. Li, Y. F. Cheung, W. Y. Fu, H. W. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 101106 (2021)
https://doi.org/10.1063/5.0060830
Published: September 2021
View articletitled, Electrically injected whispering-gallery mode InGaN/GaN microdisks
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Includes: Supplementary data
Journal Articles

Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III–V/Si dual-junctions

Moritz Kölbach, Ciler Özen, Oliver Höhn, David Lackner, Markus Feifel, Fatwa F. Abdi, Matthias M. May
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 083904 (2021)
https://doi.org/10.1063/5.0060700
Published: August 2021
View articletitled, Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III–V/Si dual-junctions
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Includes: Supplementary data
Journal Articles

GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique

Tianye Niu, Natalia Morais, Boqi Qiu, Naomi Nagai, Ya Zhang, Yasuhiko Arakawa, Kazuhiko Hirakawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 041104 (2021)
https://doi.org/10.1063/5.0058260
Published: July 2021
View articletitled, GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique
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Includes: Supplementary data
Journal Articles

Superconducting qubits in a flip-chip architecture

Editor’s Pick
C. R. Conner, A. Bienfait, H.-S. Chang, M.-H. Chou, É. Dumur, J. Grebel, G. A. Peairs, R. G. Povey, H. Yan, Y. P. Zhong, A. N. Cleland
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 232602 (2021)
https://doi.org/10.1063/5.0050173
Published: June 2021
View articletitled, Superconducting qubits in a flip-chip architecture
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Journal Articles

Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

Shoya Fukumoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Masanori Hayase, Eiji Higurashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 201601 (2020)
https://doi.org/10.1063/5.0026348
Published: November 2020
View articletitled, Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning
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