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Journal Articles

Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts

Zhaofeng Wang, Zhihong Liu, Xiaojin Chen, Xing Chen, Hanghai Du, Weichuan Xing, Weihang Zhang, Shenglei Zhao, Xiangdong Li, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152104 (2025)
https://doi.org/10.1063/5.0256979
Published: April 2025
View articletitled, Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts
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Journal Articles

Enhancement of wall-plug efficiency in AlGaN deep-ultraviolet light-emitting diodes by micro-mesh p-electrode and scattering nanostructures

Guo-Dong Hao, Manabu Taniguchi, Shin-ichiro Inoue
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143505 (2025)
https://doi.org/10.1063/5.0255184
Published: April 2025
View articletitled, Enhancement of wall-plug efficiency in AlGaN deep-ultraviolet light-emitting diodes by micro-mesh p-electrode and scattering nanostructures
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Journal Articles

Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing

Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122108 (2025)
https://doi.org/10.1063/5.0249410
Published: March 2025
View articletitled, Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing
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Journal Articles

Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications

Haochen Zhang, Mingshuo Zhang, Hu Wang, Xinchuan Zhang, Hui Zhang, Chengjie Zuo, Yansong Yang, Yi Pei, Haiding Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122103 (2025)
https://doi.org/10.1063/5.0257620
Published: March 2025
View articletitled, Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
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Journal Articles

Electric control of oxygen vacancies in homo-ferroelectric-domain BiFeO3

Xi Shen, Qinwen Guo, Xianghan Xu, Xiangfei Li, Ying Meng, Luyao Wang, Haoyu Zhuang, Richeng Yu, Sang-Wook Cheong
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122901 (2025)
https://doi.org/10.1063/5.0253399
Published: March 2025
View articletitled, Electric control of oxygen vacancies in homo-ferroelectric-domain BiFeO3
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Journal Articles

Epitaxial high-K barrier AlBN/GaN HEMTs

Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112906 (2025)
https://doi.org/10.1063/5.0235294
Published: March 2025
View articletitled, Epitaxial high-K barrier AlBN/GaN HEMTs
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Journal Articles

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

X. Q. Guo, F. J. Xu, J. Lang, J. M. Wang, L. S. Zhang, C. Ji, C. Z. Ji, Z. Y. Zhang, F. Y. Tan, Y. Wu, X. N. Kang, X. L. Yang, N. Tang, X. Q. Wang, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082104 (2025)
https://doi.org/10.1063/5.0221287
Published: February 2025
View articletitled, Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
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Journal Articles

Realizing sub-6-nm-channel high-performance spin field-effect transistors in lateral Sc2CHO/Sc2CHF/Sc2CHO heterojunctions

Editor’s Pick
Shao-Xian Wang, Ya-Qi Kong, Ming-Lang Wang, Ming-Zhi Wei, Chuan-Kui Wang, Guang-Ping Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083502 (2025)
https://doi.org/10.1063/5.0252146
Published: February 2025
View articletitled, Realizing sub-6-nm-channel high-performance spin field-effect transistors in lateral Sc2CHO/Sc2CHF/Sc2CHO heterojunctions
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Journal Articles

Hybrid-contact Schottky-barrier IGZO thin-film transistors with low barrier sensitivity and high stability

Yuzhi Li, Shenghan Zou, Guangshuo Cai, Linfeng Lan, Zheng Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 073502 (2025)
https://doi.org/10.1063/5.0248196
Published: February 2025
View articletitled, Hybrid-contact Schottky-barrier IGZO thin-film transistors with low barrier sensitivity and high stability
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Journal Articles

Designing the weak Fermi pinning and p-type Ohmic contacts to monolayer halide perovskite Cs3Bi2I9

Wei Tan, Yu-Fei Lang, Yu-Xuan Li, Yu-Qing Zhao, Yee-Sin Ang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 061604 (2025)
https://doi.org/10.1063/5.0243838
Published: February 2025
View articletitled, Designing the weak Fermi pinning and p-type Ohmic contacts to monolayer halide perovskite Cs3Bi2I9
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Journal Articles

Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN

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Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062107 (2025)
https://doi.org/10.1063/5.0230220
Published: February 2025
View articletitled, Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
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Journal Articles

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

Kornelius Tetzner, Andreas Thies, Enrico Brusaterra, Alexander Külberg, Pallabi Paul, Ina Ostermay, Joachim Würfl, Oliver Hilt
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062105 (2025)
https://doi.org/10.1063/5.0253992
Published: February 2025
View articletitled, All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates
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Journal Articles

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Featured
Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043501 (2025)
https://doi.org/10.1063/5.0245530
Published: January 2025
View articletitled, kV-class vertical p-n heterojunction rectifier based on ITO/diamond
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Journal Articles

BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures

Editor’s Pick
Ying Xu, Yiyuan Sun, Zijie Zheng, Yuxuan Wang, Yuye Kang, Kaizhen Han, Xuanqi Chen, Gerui Zheng, Xiao Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 033502 (2025)
https://doi.org/10.1063/5.0243792
Published: January 2025
View articletitled, BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures
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Journal Articles

Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

Hongyuan Zhao, Jiangni Yun, Linwei Yao, Lin Zhang, Jinyuan Liu, Junfeng Yan, Lei Zheng, Peng Kang, Wu Zhao, Zhiyong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013508 (2025)
https://doi.org/10.1063/5.0242551
Published: January 2025
View articletitled, Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions
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Journal Articles

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012110 (2025)
https://doi.org/10.1063/5.0232630
Published: January 2025
View articletitled, Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
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Journal Articles

Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes

Chen Ji, Jiaming Wang, Lisheng Zhang, Fujun Xu, Jing Lang, Xueqi Guo, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Xiangning Kang, Xuelin Yang, Ning Tang, Zhizhong Chen, Xinqiang Wang, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252107 (2024)
https://doi.org/10.1063/5.0242223
Published: December 2024
View articletitled, Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes
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Journal Articles

Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display

Hye-Jin Jin, Heesun Bae, Jaeho T. Im, Seongil Im
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 203507 (2024)
https://doi.org/10.1063/5.0240032
Published: November 2024
View articletitled, Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display
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Journal Articles

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit, Rachel Kahler, Saurav Roy, Yizheng Liu, Steve Rebollo, Anna Kallistova, Thomas E. Mates, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 182103 (2024)
https://doi.org/10.1063/5.0230413
Published: October 2024
View articletitled, 200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers
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Journal Articles

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Kangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
https://doi.org/10.1063/5.0230096
Published: October 2024
View articletitled, Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
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