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Journal Articles

Probabilistic computing enabled by continuous random numbers sampled from in-plane magnetized stochastic magnetic tunnel junctions

Ki Hyuk Han, YongJin Kim, Hyun Cheol Koo, OukJae Lee, Seokmin Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142402 (2024)
https://doi.org/10.1063/5.0223479
Published: October 2024
View article titled, Probabilistic computing enabled by continuous random numbers sampled from in-plane magnetized stochastic magnetic tunnel junctions
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Journal Articles

3D-structured photodetectors based on 2D materials

Yuning Li, Danke Chen, Xiaoqiu Tang, Lingbing Kong, Linan Li, Tao Deng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 130501 (2024)
https://doi.org/10.1063/5.0196890
Published: March 2024
View article titled, 3D-structured photodetectors based on 2D materials
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Journal Articles

Steep-slope Schottky diode with cold metal source

Wongil Shin, Gyuho Myeong, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 243506 (2022)
https://doi.org/10.1063/5.0097408
Published: June 2022
View article titled, Steep-slope Schottky diode with cold metal source
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Includes: Supplementary data
Journal Articles

A steep-slope tellurium transistor with a native voltage amplifying threshold switch

Xinxin Wang, Huanglong Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 223502 (2022)
https://doi.org/10.1063/5.0090179
Published: June 2022
View article titled, A steep-slope tellurium transistor with a native voltage amplifying threshold switch
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Includes: Supplementary data
Journal Articles

Neuromorphic computing: Challenges from quantum materials to emergent connectivity

Ivan K. Schuller, Alex Frano, R. C. Dynes, Axel Hoffmann, Beatriz Noheda, Catherine Schuman, Abu Sebastian, Jian Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 140401 (2022)
https://doi.org/10.1063/5.0092382
Published: April 2022
View article titled, Neuromorphic computing: Challenges from quantum materials to emergent connectivity
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Journal Articles

Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

Boyu Wang, Jing Ning, Jincheng Zhang, Dong Wang, Xinyi Yang, Yanqing Jia, Chi Zhang, Yu Zeng, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 163504 (2021)
https://doi.org/10.1063/5.0070904
Published: October 2021
View article titled, Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications
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Includes: Supplementary data
Journal Articles

Germanium oxidation occurs by diffusion of oxygen network interstitials

H. Li, J. Robertson
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 222902 (2017)
https://doi.org/10.1063/1.4984805
Published: May 2017
View article titled, Germanium oxidation occurs by diffusion of oxygen network interstitials
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Journal Articles

A candidate Zr-doped Sb2Te alloy for phase change memory application

Yonghui Zheng, Yan Cheng, Min Zhu, Xinglong Ji, Qing Wang, Sannian Song, Zhitang Song, Weili Liu, Songlin Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 052107 (2016)
https://doi.org/10.1063/1.4941418
Published: February 2016
View article titled, A candidate Zr-doped Sb<sub>2</sub>Te alloy for phase change memory application
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Journal Articles

The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications

I.-B. Magdău, X.-H. Liu, M. A. Kuroda, T. M. Shaw, J. Crain, P. M. Solomon, D. M. Newns, G. J. Martyna
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 073505 (2015)
https://doi.org/10.1063/1.4928681
Published: August 2015
View article titled, The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications
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Includes: Supplementary data
Journal Articles

Degenerate resistive switching and ultrahigh density storage in resistive memory

Andrew J. Lohn, Patrick R. Mickel, Conrad D. James, Matthew J. Marinella
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 103501 (2014)
https://doi.org/10.1063/1.4895526
Published: September 2014
View article titled, Degenerate resistive switching and ultrahigh density storage in resistive memory
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Includes: Supplementary data
Journal Articles

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae-Young Jeon, So Jeong Park, Mireille Mouis, Min-Kyu Joo, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 263510 (2014)
https://doi.org/10.1063/1.4886139
Published: July 2014
View article titled, Separation of surface accumulation and bulk neutral channel in junctionless transistors
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Journal Articles

Critical analysis and remedy of switching failures in straintronic logic using Bennett clocking in the presence of thermal fluctuations

Kuntal Roy
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 013103 (2014)
https://doi.org/10.1063/1.4858484
Published: January 2014
View article titled, Critical analysis and remedy of switching failures in straintronic logic using Bennett clocking in the presence of thermal fluctuations
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Includes: Supplementary data
Journal Articles

Ultra-low-energy non-volatile straintronic computing using single multiferroic composites

Kuntal Roy
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 173110 (2013)
https://doi.org/10.1063/1.4826688
Published: October 2013
View article titled, Ultra-low-energy non-volatile straintronic computing using single multiferroic composites
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Includes: Supplementary data
Journal Articles

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

E. R. Hsieh, Steve S. Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 223505 (2012)
https://doi.org/10.1063/1.4768687
Published: November 2012
View article titled, The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
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Journal Articles

X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

S. W. King, M. French, M. Jaehnig, M. Kuhn, B. French
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 202903 (2011)
https://doi.org/10.1063/1.3660248
Published: November 2011
View article titled, X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces
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Journal Articles

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Abigail Lubow, Sohrab Ismail-Beigi, T. P. Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 122105 (2010)
https://doi.org/10.1063/1.3367708
Published: March 2010
View article titled, Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
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Journal Articles

Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains

C. M. Chaves, Thereza Paiva, J. d’Albuquerque e Castro, Belita Koiller
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 032505 (2009)
https://doi.org/10.1063/1.3072361
Published: January 2009
View article titled, Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains
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Journal Articles

A first-principles study of enhanced dielectric responses in Ti and Ce doped HfO 2

Gargi Dutta
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 012907 (2009)
https://doi.org/10.1063/1.3063126
Published: January 2009
View article titled, A first-principles study of enhanced dielectric responses in Ti and Ce doped HfO 2
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Journal Articles

Power scaling of an extreme ultraviolet light source for future lithography

Erik Wagenaars, Felix Küpper, Jürgen Klein, Willi Neff, Marcel Damen, Pieter van der Wel, Dominik Vaudrevange, Jeroen Jonkers
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 181501 (2008)
https://doi.org/10.1063/1.2924299
Published: May 2008
View article titled, Power scaling of an extreme ultraviolet light source for future lithography
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Journal Articles

On the possibility of degradation-free field effect transistors

Ahmad Ehteshamul Islam, Muhammad Ashraful Alam
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 173504 (2008)
https://doi.org/10.1063/1.2919798
Published: April 2008
View article titled, On the possibility of degradation-free field effect transistors
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