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Journal Articles

Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits

Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, Jiun-Yun Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 063502 (2025)
https://doi.org/10.1063/5.0245929
Published: February 2025
View articletitled, Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits
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Journal Articles

Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission

A. N. Yablonskiy, V. B. Shmagin, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, E. V. Demidov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, A. V. Novikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231103 (2024)
https://doi.org/10.1063/5.0239609
Published: December 2024
View articletitled, Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission
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Journal Articles

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Ning Wang, Shao-Min Wang, Run-Ze Zhang, Jia-Min Kang, Wen-Long Lu, Hai-Ou Li, Gang Cao, Bao-Chuan Wang, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 204002 (2024)
https://doi.org/10.1063/5.0230605
Published: November 2024
View articletitled, Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
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Journal Articles

Toward utilizing scanning gate microscopy as a high-resolution probe of valley splitting in Si/SiGe heterostructures

Efe Cakar, H. Ekmel Ercan, Gordian Fuchs, Artem O. Denisov, Christopher R. Anderson, Mark F. Gyure, Jason R. Petta
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 143504 (2024)
https://doi.org/10.1063/5.0217704
Published: October 2024
View articletitled, Toward utilizing scanning gate microscopy as a high-resolution probe of valley splitting in Si/SiGe heterostructures
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Journal Articles

Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands

Dmitry V. Yurasov, Sergey A. Dyakov, Ilia A. Smagin, Sergei G. Tikhodeev, Nikolay A. Gippius, Margarita V. Stepikhova, Artem V. Peretokin, Mikhail V. Shaleev, Zhanna V. Smagina, Dmitry E. Utkin, Alexey V. Novikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 021105 (2024)
https://doi.org/10.1063/5.0213583
Published: July 2024
View articletitled, Symmetry breaking of bound states in the continuum in luminescence response of photonic crystal slabs with embedded Ge nanoislands
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Journal Articles

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093502 (2024)
https://doi.org/10.1063/5.0180934
Published: February 2024
View articletitled, Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy
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Journal Articles

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Artem O. Denisov, Gordian Fuchs, Seong W. Oh, Jason R. Petta
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 093502 (2023)
https://doi.org/10.1063/5.0158196
Published: August 2023
View articletitled, Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
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Journal Articles

A 2D quantum dot array in planar 28Si/SiGe

Editor’s Pick
F. K. Unseld, M. Meyer, M. T. Mądzik, F. Borsoi, S. L. de Snoo, S. V. Amitonov, A. Sammak, G. Scappucci, M. Veldhorst, L. M. K. Vandersypen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 084002 (2023)
https://doi.org/10.1063/5.0160847
Published: August 2023
View articletitled, A 2D quantum dot array in planar 28Si/SiGe
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Includes: Supplementary data
Journal Articles

Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi, Mario Lodari, Amir Sammak, Giordano Scappucci
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 184003 (2022)
https://doi.org/10.1063/5.0088576
Published: May 2022
View articletitled, Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap
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Includes: Supplementary data
Journal Articles

The critical role of substrate disorder in valley splitting in Si quantum wells

Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 243107 (2018)
https://doi.org/10.1063/1.5033447
Published: June 2018
View articletitled, The critical role of substrate disorder in valley splitting in Si quantum wells
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Includes: Supplementary data
Journal Articles

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, Jiun-Yun Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 083502 (2018)
https://doi.org/10.1063/1.5018636
Published: February 2018
View articletitled, Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure
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Journal Articles

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

X. Mi, J. V. Cady, D. M. Zajac, J. Stehlik, L. F. Edge, J. R. Petta
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 043502 (2017)
https://doi.org/10.1063/1.4974536
Published: January 2017
View articletitled, Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon
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Journal Articles

Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

Y. Bogumilowicz, J. M. Hartmann, R. Cipro, R. Alcotte, M. Martin, F. Bassani, J. Moeyaert, T. Baron, J. B. Pin, X. Bao, Z. Ye, E. Sanchez
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 212105 (2015)
https://doi.org/10.1063/1.4935943
Published: November 2015
View articletitled, Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates
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Journal Articles

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Ryan H. Foote, Daniel R. Ward, J. R. Prance, John King Gamble, Erik Nielsen, Brandur Thorgrimsson, D. E. Savage, A. L. Saraiva, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 103112 (2015)
https://doi.org/10.1063/1.4930909
Published: September 2015
View articletitled, Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
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Journal Articles

Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots

K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda, S. Tarucha
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 123113 (2013)
https://doi.org/10.1063/1.4799287
Published: March 2013
View articletitled, Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots
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Journal Articles

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures

S.-H. Huang, T.-M. Lu, S.-C. Lu, C.-H. Lee, C. W. Liu, D. C. Tsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 042111 (2012)
https://doi.org/10.1063/1.4739513
Published: July 2012
View articletitled, Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
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Journal Articles

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Zhengping Jiang, Neerav Kharche, Timothy Boykin, Gerhard Klimeck
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 103502 (2012)
https://doi.org/10.1063/1.3692174
Published: March 2012
View articletitled, Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
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Journal Articles

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 043508 (2012)
https://doi.org/10.1063/1.3678043
Published: January 2012
View articletitled, Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
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Journal Articles

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

M. G. Borselli, K. Eng, E. T. Croke, B. M. Maune, B. Huang, R. S. Ross, A. A. Kiselev, P. W. Deelman, I. Alvarado-Rodriguez, A. E. Schmitz, M. Sokolich, K. S. Holabird, T. M. Hazard, M. F. Gyure, A. T. Hunter
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 063109 (2011)
https://doi.org/10.1063/1.3623479
Published: August 2011
View articletitled, Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
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Journal Articles

Photovoltage induced by ratchet effect in Si/SiGe heterostructures under microwave irradiation

E. S. Kannan, I. Bisotto, J.-C. Portal, R. Murali, T. J. Beck
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193505 (2011)
https://doi.org/10.1063/1.3590255
Published: May 2011
View articletitled, Photovoltage induced by ratchet effect in Si/SiGe heterostructures under microwave irradiation
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