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Journal Articles

Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

Hongyuan Zhao, Jiangni Yun, Linwei Yao, Lin Zhang, Jinyuan Liu, Junfeng Yan, Lei Zheng, Peng Kang, Wu Zhao, Zhiyong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013508 (2025)
https://doi.org/10.1063/5.0242551
Published: January 2025
View article titled, Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions
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Journal Articles

Enhanced tunneling electroresistance in ferroelectric tunnel junctions achieved through dual interface control

Zhijun Ma, Qi Zhang, Zeyu Zhang, Yizhong Guo, Yongqi Ruan, Zhiwei Wang, Peng Zhou, Mikayla Lord, Ji Luo, Shuai Liu, Nagarajan Valanoor, Tianjin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 262903 (2024)
https://doi.org/10.1063/5.0220789
Published: December 2024
View article titled, Enhanced tunneling electroresistance in ferroelectric tunnel junctions achieved through dual interface control
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Journal Articles

Hafnia-based neuromorphic devices

Featured
Hai Zhong, Kuijuan Jin, Chen Ge
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150501 (2024)
https://doi.org/10.1063/5.0226206
Published: October 2024
View article titled, Hafnia-based neuromorphic devices
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Journal Articles

Gallium nitride-based resonant tunneling diode oscillators

Editor’s Pick
Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 113503 (2024)
https://doi.org/10.1063/5.0225312
Published: September 2024
View article titled, Gallium nitride-based resonant tunneling diode oscillators
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Journal Articles

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

Zhijun Wu, Tianpeng Duan, Zhihong Tian, Yongheng Jiang, Yichun Zhou, Jie Jiang, Qiong Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112903 (2024)
https://doi.org/10.1063/5.0216890
Published: September 2024
View article titled, Ferroelectric tunnel junctions based on a HfO<sub>2</sub>/dielectric composite barrier
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Journal Articles

High electroresistance in all-oxide ferroelectric tunnel junctions enabled by a narrow bandgap Mott insulator electrode

Yuanyuan Zhang, Yifei Hao, Le Zhang, Kun Wang, Xia Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102904 (2024)
https://doi.org/10.1063/5.0223348
Published: September 2024
View article titled, High electroresistance in all-oxide ferroelectric tunnel junctions enabled by a narrow bandgap Mott insulator electrode
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Journal Articles

Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior

Editor’s Pick
Yong Chen, Peng Duan, Zhi-Long Jia, Xin-Xin Yang, Lei Du, Hao-Ran Tao, Chi Zhang, Liang-Liang Guo, Hai-Feng Zhang, Tian-Le Wang, Ze-An Zhao, Xiao-Yan Yang, Sheng Zhang, Ren-Ze Zhao, Peng Wang, Wei-Cheng Kong, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 094001 (2024)
https://doi.org/10.1063/5.0223366
Published: August 2024
View article titled, Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior
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Journal Articles

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Jialong Qi, Huizhen Han, Shuli Yang, Lili Kang, Huabing Yin, Gaofeng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042903 (2024)
https://doi.org/10.1063/5.0219253
Published: July 2024
View article titled, Theoretical study of metal contacts to the monolayer ferroelectric material CuInP<sub>2</sub>S<sub>6</sub> and its device applications
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Journal Articles

High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

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Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata, Hiroshi Funakubo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032904 (2024)
https://doi.org/10.1063/5.0202063
Published: July 2024
View article titled, High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
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Journal Articles

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 263101 (2024)
https://doi.org/10.1063/5.0209432
Published: June 2024
View article titled, Transport properties of multilayer Nb<sub>x</sub>Mo<sub>1−x</sub>S<sub>2</sub>/MoS<sub>2</sub> in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
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Journal Articles

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi, Zane Jamal-Eddine, Brendan Gunning, Andrew Armstrong, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 221106 (2024)
https://doi.org/10.1063/5.0213300
Published: May 2024
View article titled, Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
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Journal Articles

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Editor’s Pick
Yimeng Sang, Zhe Zhuang, Kun Xing, Dongqi Zhang, Jinjian Yan, Zhuoying Jiang, Chenxue Li, Kai Chen, Yu Ding, Tao Tao, Daisuke Iida, Ke Wang, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142103 (2024)
https://doi.org/10.1063/5.0190000
Published: April 2024
View article titled, High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact
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Journal Articles

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093502 (2024)
https://doi.org/10.1063/5.0180934
Published: February 2024
View article titled, Hole-tunneling Si<sub>0.82</sub>Ge<sub>0.18</sub>/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm<sup>2</sup> fabricated by sputter epitaxy
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Journal Articles

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Ping Liu, Yongde Li, De Hou, Hanpeng Zhu, Hecheng Luo, Shuang Zhou, Lujun Wei, Wei Niu, Zhigao Sheng, Weiwei Mao, Yong Pu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 091901 (2024)
https://doi.org/10.1063/5.0191188
Published: February 2024
View article titled, Switchable diode effect in 2D van der Waals ferroelectric CuCrP<sub>2</sub>S<sub>6</sub>
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Includes: Supplementary data
Journal Articles

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Editor’s Pick
Fang Liu, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMao Li, RenJie Liu, Zhuang Guo, Kai Zhang, JinCheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 073501 (2024)
https://doi.org/10.1063/5.0180145
Published: February 2024
View article titled, Record peak current density of over 1500 kA/cm<sup>2</sup> in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates
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Journal Articles

Electronic characteristics of the two-dimensional van der Waals ferroelectric α - In 2 Se 3 / Cs 3 Bi 2 I 9 heterostructures

Yu-Fei Lang, Daifeng Zou, Ying Xu, Shaolong Jiang, Yu-Qing Zhao, Yee-Sin Ang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 052903 (2024)
https://doi.org/10.1063/5.0189709
Published: February 2024
View article titled, Electronic characteristics of the two-dimensional van der Waals ferroelectric α - In 2 Se 3 / Cs 3 Bi 2 I 9 heterostructures
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Includes: Supplementary data
Journal Articles

The polarization-modulated electronic structure and giant tunneling-electroresistance effect of a one-dimensional ferroelectric Ta4OTe9I4 nanowire

Fumin Zhang, Lili Kang, Chang Liu, Bing Wang, Huabing Yin
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 202903 (2023)
https://doi.org/10.1063/5.0176290
Published: November 2023
View article titled, The polarization-modulated electronic structure and giant tunneling-electroresistance effect of a one-dimensional ferroelectric Ta<sub>4</sub>OTe<sub>9</sub>I<sub>4</sub> nanowire
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Includes: Supplementary data
Journal Articles

Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells

S. Krüger, A. Pfenning, F. Jabeen, F. Hartmann, S. Höfling
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 133501 (2023)
https://doi.org/10.1063/5.0162282
Published: September 2023
View article titled, Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells
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Journal Articles

Publisher's Note: “Island THz on-chip slot-antenna resonant-tunneling-diode oscillators” [Appl. Phys. Lett. 123 , 043508 (2023)]

D. Tuan Nguyen, P. Ourednik, M. Feiginov
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 079902 (2023)
https://doi.org/10.1063/5.0171219
Published: August 2023
View article titled, Publisher's Note: “Island THz on-chip slot-antenna resonant-tunneling-diode oscillators” [Appl. Phys. Lett. 123 , 043508 (2023)]
Open the PDF for Publisher's Note: “Island THz on-chip slot-antenna resonant-tunneling-diode oscillators” [Appl. Phys. Lett. 123 , 043508 (2023)] in another window
Journal Articles

Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

Boyuan Chi, Leina Jiang, Yu Zhu, Lingling Tao, Xiufeng Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 053501 (2023)
https://doi.org/10.1063/5.0159999
Published: August 2023
View article titled, Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study
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Includes: Supplementary data