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Journal Articles

Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer

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Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
https://doi.org/10.1063/5.0252761
Published: May 2025
View articletitled, Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
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Journal Articles

High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer

Open Access
Mritunjay Kumar, Vishal Khandelwal, Dhanu Chettri, Ganesh Mainali, Glen Isaac Maciel García, Zuojian Pan, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193505 (2025)
https://doi.org/10.1063/5.0263220
Published: May 2025
View articletitled, High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
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Journal Articles

MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse

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Xianjun Zhang, Hangyu Li, Peihong Song, Yu Qin, Pengfei Hou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192102 (2025)
https://doi.org/10.1063/5.0266251
Published: May 2025
View articletitled, MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
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Journal Articles

Metal oxide photoelectric synaptic transistor with CeOx floating gate and its application in neuromorphic computing

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Guangtan Miao, Liuyue Shan, Yao Dong, Zezhong Yin, Ranran Ci, Guoxia Liu, Fukai Shan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193301 (2025)
https://doi.org/10.1063/5.0262461
Published: May 2025
View articletitled, Metal oxide photoelectric synaptic transistor with CeOx floating gate and its application in neuromorphic computing
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Journal Articles

Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures

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Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192101 (2025)
https://doi.org/10.1063/5.0264963
Published: May 2025
View articletitled, Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures
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Journal Articles

Synthetic control of monolayer, bilayer, and trilayer WSe2 single crystals for high-performance 2D p-type transistors

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Weixu Qi, Weiqi Dang, Jia Li, Bo Li, Xidong Duan, Ruixia Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 173102 (2025)
https://doi.org/10.1063/5.0266111
Published: April 2025
View articletitled, Synthetic control of monolayer, bilayer, and trilayer WSe2 single crystals for high-performance 2D p-type transistors
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Journal Articles

Highly stable InZnSnTbOX thin-film transistors

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Yan Wang, Penghui He, Shiyue Zuo, Yu Song, Lin Tang, Ruohao Hong, Guoli Li, Lei Liao, Xuming Zou, Xingqiang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 173501 (2025)
https://doi.org/10.1063/5.0255013
Published: April 2025
View articletitled, Highly stable InZnSnTbOX thin-film transistors
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Journal Articles

Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter

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Ramit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi, Nethaji Dharmarasu, K. Radhakrishnan, Munho Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172101 (2025)
https://doi.org/10.1063/5.0259594
Published: April 2025
View articletitled, Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter
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Journal Articles

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

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Hao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 163503 (2025)
https://doi.org/10.1063/5.0253093
Published: April 2025
View articletitled, 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
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Journal Articles

Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors

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Xiaocheng Ma, Ablat Abliz, Da Wan, Jingli Wang, Guoli Li, Xingqiang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143506 (2025)
https://doi.org/10.1063/5.0264102
Published: April 2025
View articletitled, Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors
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Journal Articles

Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces

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Yuan Kai, Jiawei Wang, Congyan Lu, Ling Li, Chao Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143502 (2025)
https://doi.org/10.1063/5.0248175
Published: April 2025
View articletitled, Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
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Journal Articles

Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications

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Philippe Ferrandis, Thomas Bédécarrats, Mikael Cassé
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133506 (2025)
https://doi.org/10.1063/5.0255225
Published: April 2025
View articletitled, Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications
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Journal Articles

Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures

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Muhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133504 (2025)
https://doi.org/10.1063/5.0253946
Published: April 2025
View articletitled, Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures
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Journal Articles

Avian eye-inspired tetrachromatic-bidirectional synaptic transistor for multi-spectral recognition

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Mengyao Zhang, Yurong Jiang, Yan Zhang, Leiming Yu, Suicai Zhang, Xueping Li, Xiaohui Song, Kang Liu, Ding Wang, Jianye Wang, Congxin Xia
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133501 (2025)
https://doi.org/10.1063/5.0256408
Published: March 2025
View articletitled, Avian eye-inspired tetrachromatic-bidirectional synaptic transistor for multi-spectral recognition
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Journal Articles

Biorealistic response in a technology-compatible graphene synaptic transistor

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Anastasia Chouprik, Elizaveta Guberna, Islam Mutaev, Ilya Margolin, Evgeny Guberna, Maxim Rybin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 123502 (2025)
https://doi.org/10.1063/5.0243814
Published: March 2025
View articletitled, Biorealistic response in a technology-compatible graphene synaptic transistor
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Journal Articles

Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications

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Haochen Zhang, Mingshuo Zhang, Hu Wang, Xinchuan Zhang, Hui Zhang, Chengjie Zuo, Yansong Yang, Yi Pei, Haiding Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122103 (2025)
https://doi.org/10.1063/5.0257620
Published: March 2025
View articletitled, Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
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Journal Articles

Epitaxial high-K barrier AlBN/GaN HEMTs

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Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112906 (2025)
https://doi.org/10.1063/5.0235294
Published: March 2025
View articletitled, Epitaxial high-K barrier AlBN/GaN HEMTs
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Journal Articles

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

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Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 111604 (2025)
https://doi.org/10.1063/5.0252966
Published: March 2025
View articletitled, Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
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Journal Articles

Fano interference in single-molecule transistors

Open Access
Yiping Ouyang, Rui Wang, Zewen Wu, Deping Guo, Yang-Yang Ju, Jun Chen, Minhao Zhang, Danfeng Pan, Xuecou Tu, Shuai Zhang, Lin Kang, Jian Chen, Peiheng Wu, Xuefeng Wang, Jianguo Wan, Wei Ji, Xianghua Kong, Yuan-Zhi Tan, Fengqi Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 103102 (2025)
https://doi.org/10.1063/5.0254457
Published: March 2025
View articletitled, Fano interference in single-molecule transistors
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Journal Articles

Visible light-driven synaptic transistors based on bilayer InGaZnO homojunction for neuromorphic computing

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Zezhong Yin, Liuyue Shan, Ranran Ci, Dandan Hao, Guangtan Miao, Likun Tian, Guoxia Liu, Fukai Shan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 103302 (2025)
https://doi.org/10.1063/5.0256082
Published: March 2025
View articletitled, Visible light-driven synaptic transistors based on bilayer InGaZnO homojunction for neuromorphic computing
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