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Journal Articles
Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
Published: May 2025
Journal Articles
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Open AccessMritunjay Kumar, Vishal Khandelwal, Dhanu Chettri, Ganesh Mainali, Glen Isaac Maciel García, Zuojian Pan, Xiaohang Li
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 193505 (2025)
Published: May 2025
Journal Articles
MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 192102 (2025)
Published: May 2025
Journal Articles
Metal oxide photoelectric synaptic transistor with CeOx floating gate and its application in neuromorphic computing
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 193301 (2025)
Published: May 2025
Journal Articles
Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 192101 (2025)
Published: May 2025
Journal Articles
Synthetic control of monolayer, bilayer, and trilayer WSe2 single crystals for high-performance 2D p-type transistors
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 173102 (2025)
Published: April 2025
Journal Articles
Highly stable InZnSnTbOX thin-film transistors
Available to PurchaseYan Wang, Penghui He, Shiyue Zuo, Yu Song, Lin Tang, Ruohao Hong, Guoli Li, Lei Liao, Xuming Zou, Xingqiang Liu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 173501 (2025)
Published: April 2025
Journal Articles
Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter
Available to PurchaseRamit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi, Nethaji Dharmarasu, K. Radhakrishnan, Munho Kim
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 172101 (2025)
Published: April 2025
Journal Articles
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Available to PurchaseHao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 163503 (2025)
Published: April 2025
Journal Articles
Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 143506 (2025)
Published: April 2025
Journal Articles
Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 143502 (2025)
Published: April 2025
Journal Articles
Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 133506 (2025)
Published: April 2025
Journal Articles
Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures
Available to PurchaseMuhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho Kim
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 133504 (2025)
Published: April 2025
Journal Articles
Avian eye-inspired tetrachromatic-bidirectional synaptic transistor for multi-spectral recognition
Available to PurchaseMengyao Zhang, Yurong Jiang, Yan Zhang, Leiming Yu, Suicai Zhang, Xueping Li, Xiaohui Song, Kang Liu, Ding Wang, Jianye Wang, Congxin Xia
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 133501 (2025)
Published: March 2025
Journal Articles
Biorealistic response in a technology-compatible graphene synaptic transistor
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 123502 (2025)
Published: March 2025
Journal Articles
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
Available to PurchaseHaochen Zhang, Mingshuo Zhang, Hu Wang, Xinchuan Zhang, Hui Zhang, Chengjie Zuo, Yansong Yang, Yi Pei, Haiding Sun
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 122103 (2025)
Published: March 2025
Journal Articles
Epitaxial high-K barrier AlBN/GaN HEMTs
Available to PurchaseChandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 112906 (2025)
Published: March 2025
Journal Articles
Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 111604 (2025)
Published: March 2025
Journal Articles
Fano interference in single-molecule transistors
Open AccessYiping Ouyang, Rui Wang, Zewen Wu, Deping Guo, Yang-Yang Ju, Jun Chen, Minhao Zhang, Danfeng Pan, Xuecou Tu, Shuai Zhang, Lin Kang, Jian Chen, Peiheng Wu, Xuefeng Wang, Jianguo Wan, Wei Ji, Xianghua Kong, Yuan-Zhi Tan, Fengqi Song
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 103102 (2025)
Published: March 2025
Journal Articles
Visible light-driven synaptic transistors based on bilayer InGaZnO homojunction for neuromorphic computing
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 103302 (2025)
Published: March 2025
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