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Journal Articles

Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Yuling Peng, Wei Dou, Pengfei Chen, Xiaodong Xu, Guanggang Jiang, Pufan Deng, Nenghui Zhang, Yanling Yin, Yuehua Peng, Dongsheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 093501 (2024)
https://doi.org/10.1063/5.0219857
Published: August 2024
View article titled, Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application
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Journal Articles

Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation

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Bin Liu, Feng Wang, Xuyang Li, Dan Kuang, Xianwen Liu, Shuo Zhang, Zongchi Bao, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Zhinong Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 063504 (2024)
https://doi.org/10.1063/5.0212863
Published: August 2024
View article titled, Sputtered AlO<sub>x</sub> interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation
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Journal Articles

Low-voltage solution-processed Sn-doped CuI neuromorphic transistors with synaptic plasticity and pain mimicked

Xiaodong Xu, Wei Dou, Pengfei Chen, Yuling Peng, Yingjie Ai, Guanggang Jiang, Pufan Deng, Yanling Yin, Yuehua Peng, Dongsheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 053501 (2024)
https://doi.org/10.1063/5.0217175
Published: July 2024
View article titled, Low-voltage solution-processed Sn-doped CuI neuromorphic transistors with synaptic plasticity and pain mimicked
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Journal Articles

On a Mott formalism for modeling oxide thin-film transistors

Editor’s Pick
Guangzheng Yi, Yuan Li, Kunlin Cai, Jun Yu, Arokia Nathan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 033501 (2024)
https://doi.org/10.1063/5.0212618
Published: July 2024
View article titled, On a Mott formalism for modeling oxide thin-film transistors
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Journal Articles

Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

Editor’s Pick
Guanming Zhu, Zhiying Chen, Meng Zhang, Lei Lu, Sunbin Deng, Man Wong, Hoi-Sing Kwok
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023505 (2024)
https://doi.org/10.1063/5.0213509
Published: July 2024
View article titled, Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress
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Journal Articles

Metal oxide thin film electronics

Thomas D. Anthopoulos, Jen-Sue Chen, Antonio Facchetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 190401 (2024)
https://doi.org/10.1063/5.0215543
Published: May 2024
View article titled, Metal oxide thin film electronics
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Journal Articles

Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K

Yayi Chen, Xingji Liu, Yuan Liu, Rongsheng Chen, Jianfeng Zhang, Mingchao Wu, Hoi-Sing Kwok, Wei Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173507 (2024)
https://doi.org/10.1063/5.0204316
Published: April 2024
View article titled, Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K
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Journal Articles

The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect

Zongchi Bao, Bin Liu, Xianwen Liu, Shuo Zhang, Le Weng, Haoran Sun, Xi Zhang, Qi Yao, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang, Zhinong Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 163501 (2024)
https://doi.org/10.1063/5.0196413
Published: April 2024
View article titled, The stability analysis of In–Ga–ZnO thin film transistors with polyimide substrates based on Maxwell–Wagner effect
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Journal Articles

Poling induced changes in polarization domain structure of polymer ferroelectrics for application in organic thin film transistors

Arash Ghobadi, Somayeh Saadat Niavol, Evan Restuccia, Andrew C. Meng, Suchismita Guha
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153301 (2024)
https://doi.org/10.1063/5.0200724
Published: April 2024
View article titled, Poling induced changes in polarization domain structure of polymer ferroelectrics for application in organic thin film transistors
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Includes: Supplementary data
Journal Articles

A ternary gate-connected threshold switching thin-film transistor

Kyung Seok Woo, Yonghee Lee, Joon-Kyu Han, Tae Won Park, Yoon Ho Jang, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153503 (2024)
https://doi.org/10.1063/5.0187155
Published: April 2024
View article titled, A ternary gate-connected threshold switching thin-film transistor
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Includes: Supplementary data
Journal Articles

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Qingling Xu, Haitian Wei, Yijie Lin, Zhenxiang Yan, Wei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 143301 (2024)
https://doi.org/10.1063/5.0200735
Published: April 2024
View article titled, Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric
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Includes: Supplementary data
Journal Articles

Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations

Dongho Choi, Sanghoon Park, Hanul Moon, Seunghyup Yoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142102 (2024)
https://doi.org/10.1063/5.0185330
Published: April 2024
View article titled, Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations
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Journal Articles

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Pan Wen, Cong Peng, Zihui Chen, Xingwei Ding, Fa-Hsyang Chen, Guowen Yan, Lin Xu, Dejian Wang, Xiaoqi Sun, Longlong Chen, Junfeng Li, Xifeng Li, Jianhua Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133501 (2024)
https://doi.org/10.1063/5.0194691
Published: March 2024
View article titled, High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition
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Includes: Supplementary data
Journal Articles

Low-voltage solution-processed NaxCu1 − xI thin-film transistors for mimicking synaptic plasticity

Guangxiu Zeng, Wei Dou, Xiaomin Gan, Liuhui Lei, Xing Yuan, Wei Hou, Jia Yang, Yanling Yin, Weichang Zhou, Dongsheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123508 (2024)
https://doi.org/10.1063/5.0186892
Published: March 2024
View article titled, Low-voltage solution-processed Na<sub>x</sub>Cu<sub>1 − x</sub>I thin-film transistors for mimicking synaptic plasticity
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Journal Articles

Enhanced performance in doped micro-nano porous organic thin-film transistors

Dongwei Zhang, Xiwei Zheng, Chao He, Yaowu He, Hong Meng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123301 (2024)
https://doi.org/10.1063/5.0193504
Published: March 2024
View article titled, Enhanced performance in doped micro-nano porous organic thin-film transistors
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Includes: Supplementary data
Journal Articles

Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage

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Huan Yang, Tengyan Huang, Wengao Pan, Lei Lu, Shengdong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093501 (2024)
https://doi.org/10.1063/5.0188427
Published: February 2024
View article titled, Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage
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Journal Articles

Synaptic plasticity and memory mimicked in solution-processed K-doped CuI thin film transistors

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Jiangyun Lei, Wei Dou, Wei Hou, Xiaomin Gan, Guanggang Jiang, Yanling Yin, Jia Yang, Pufan Deng, Dongsheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 033504 (2024)
https://doi.org/10.1063/5.0182472
Published: January 2024
View article titled, Synaptic plasticity and memory mimicked in solution-processed K-doped CuI thin film transistors
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Journal Articles

Low-frequency noise in InSnZnO thin film transistors with high-quality SiO2 gate oxide stacks

Yayi Chen, Yuan Liu, Sunbin Deng, Rongsheng Chen, Jianfeng Zhang, Hoi-Sing Kwok, Wei Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 023501 (2024)
https://doi.org/10.1063/5.0174250
Published: January 2024
View article titled, Low-frequency noise in InSnZnO thin film transistors with high-quality SiO<sub>2</sub> gate oxide stacks
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Journal Articles

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Editor’s Pick
Yuzhi Li, Yue Zhou, Shenghan Zou, Linfeng Lan, Zheng Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 103503 (2023)
https://doi.org/10.1063/5.0159184
Published: September 2023
View article titled, Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
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Includes: Supplementary data
Journal Articles

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Seung Ho Ryu, Jihoon Jeon, Gwang Min Park, Taikyu Kim, Taeyong Eom, Taek-Mo Chung, In-Hwan Baek, Seong Keun Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 073505 (2023)
https://doi.org/10.1063/5.0164727
Published: August 2023
View article titled, Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance
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Includes: Supplementary data