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Journal Articles

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Yuzhi Li, Yue Zhou, Shenghan Zou, Linfeng Lan, Zheng Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 103503 (2023)
https://doi.org/10.1063/5.0159184
Published: September 2023
View article titled, Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
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Includes: Supplementary data
Journal Articles

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Seung Ho Ryu, Jihoon Jeon, Gwang Min Park, Taikyu Kim, Taeyong Eom, Taek-Mo Chung, In-Hwan Baek, Seong Keun Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 073505 (2023)
https://doi.org/10.1063/5.0164727
Published: August 2023
View article titled, Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance
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Includes: Supplementary data
Journal Articles

Molecular semiconductors and the Ioffe–Regel criterion: A terahertz study on band transport in DBTTT

P. Riederer, F. Devaux, G. Schweicher, Y. H. Geerts, R. Kersting
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 032103 (2023)
https://doi.org/10.1063/5.0153710
Published: July 2023
View article titled, Molecular semiconductors and the Ioffe–Regel criterion: A terahertz study on band transport in DBTTT
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Includes: Supplementary data
Journal Articles

Highly sensitive biosensor based on IGZO thin-film transistors for detection of Parkinson's disease

Tongzheng Li, Tongying Xu, Zhengyang Yao, Yanan Ding, Guoxia Liu, Fukai Shan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 243701 (2023)
https://doi.org/10.1063/5.0151300
Published: June 2023
View article titled, Highly sensitive biosensor based on IGZO thin-film transistors for detection of Parkinson's disease
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Journal Articles

Advantages of adding a weak second gate in sub-micron bottom-contact organic thin film transistors

Chankeun Yoon, Yuchen Zhou, Calla M. McCulley, Kelly Liang, Ananth Dodabalapur
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 223501 (2023)
https://doi.org/10.1063/5.0143418
Published: May 2023
View article titled, Advantages of adding a weak second gate in sub-micron bottom-contact organic thin film transistors
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Includes: Supplementary data
Journal Articles

Low-voltage solution-processed P-type Mg-doped CuI thin film transistors with NAND logic function

Guanggang Jiang, Wei Dou, Xiaomin Gan, Liuhui Lei, Xing Yuan, Wei Hou, Jia Yang, Weichang Zhou, Dongsheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 213501 (2023)
https://doi.org/10.1063/5.0152445
Published: May 2023
View article titled, Low-voltage solution-processed P-type Mg-doped CuI thin film transistors with NAND logic function
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Journal Articles

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Liwei Ji, Xue Chen, Xi Su, Jiaxian Wan, Zexin Tu, Hao Wu, Chang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 202105 (2023)
https://doi.org/10.1063/5.0150672
Published: May 2023
View article titled, Influence of indium doping on electrical performance of gallium oxide thin-film transistors
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Includes: Supplementary data
Journal Articles

High-performance p-channel CuIBr thin-film transistor synthesized from solution in the atmosphere

Wei Wei, Ming Gao, Zhiyong Wang, Yong-Wei Zhang, Zhi Gen Yu, Wai Kin Chim, Chunxiang Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 193301 (2023)
https://doi.org/10.1063/5.0137664
Published: May 2023
View article titled, High-performance p-channel CuIBr thin-film transistor synthesized from solution in the atmosphere
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Includes: Supplementary data
Journal Articles

Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Mengchao Li, Qixin Zhuang, Shirong Lu, Zhigang Zang, Wensi Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 162104 (2023)
https://doi.org/10.1063/5.0147857
Published: April 2023
View article titled, Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics
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Includes: Supplementary data
Journal Articles

MXene-based metal halide perovskite vertical field-effect transistors: Toward high current-density and high photodetection performance

Haihong Xie, Ping-An Chen, Xincan Qiu, Yu Liu, Jiangnan Xia, Jing Guo, Huan Wei, Zhenqi Gong, Jiaqi Ding, Yuanyuan Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 153301 (2023)
https://doi.org/10.1063/5.0141280
Published: April 2023
View article titled, MXene-based metal halide perovskite vertical field-effect transistors: Toward high current-density and high photodetection performance
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Includes: Supplementary data
Journal Articles

Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress

Han-Yu Chang, Ting-Chang Chang, Mao-Chou Tai, Bo-Shen Huang, Kuan-Ju Zhou, Yu-Bo Wang, Hung-Ming Kuo, Jen-Wei Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123504 (2023)
https://doi.org/10.1063/5.0135302
Published: March 2023
View article titled, Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress
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Journal Articles

Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors

Sunjie Hu, Meng Xu, Cong Peng, Longlong Chen, Hai Liu, Xifeng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123502 (2023)
https://doi.org/10.1063/5.0137931
Published: March 2023
View article titled, Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors
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Journal Articles

Reservoir computing based on electric-double-layer coupled InGaZnO artificial synapse

Yang Yang, Hangyuan Cui, Shuo Ke, Mengjiao Pei, Kailu Shi, Changjin Wan, Qing Wan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 043508 (2023)
https://doi.org/10.1063/5.0137647
Published: January 2023
View article titled, Reservoir computing based on electric-double-layer coupled InGaZnO artificial synapse
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Journal Articles

High mobility amorphous InSnO thin film transistors via low-temperature annealing

Mengzhen Hu, Lei Xu, Xinnan Zhang, Hanyuan Hao, Shi Zong, Haimin Chen, Zengcai Song, Shijun Luo, Zhihua Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 033503 (2023)
https://doi.org/10.1063/5.0131595
Published: January 2023
View article titled, High mobility amorphous InSnO thin film transistors via low-temperature annealing
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Includes: Supplementary data
Journal Articles

High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer

Ziheng Bai, Ying Zhao, Jiawei Wang, Dongyang Liu, Yu Shan, Zean Guo, Yuan Kai, Ke Hu, Congyan Lu, Nianduan Lu, Kui Xiao, Ling Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 263502 (2022)
https://doi.org/10.1063/5.0127613
Published: December 2022
View article titled, High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer
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Journal Articles

Low-temperature crystallization of indium oxide thin films with a photoactivable additive

Jun-Gyu Choi, Won-June Lee, Yong-Ryun Jo, Hyeonjun Na, Sangwoo Lee, Bong-Joong Kim, Myung-Han Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243301 (2022)
https://doi.org/10.1063/5.0127480
Published: December 2022
View article titled, Low-temperature crystallization of indium oxide thin films with a photoactivable additive
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Includes: Supplementary data
Journal Articles

High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel

Qianlan Hu, Shenwu Zhu, Chengru Gu, Yanqing Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 242101 (2022)
https://doi.org/10.1063/5.0128781
Published: December 2022
View article titled, High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel
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Journal Articles

The clarification of leakage conduction mechanism of HfO2/SiNx stacked a-IGZO TFT and its variation at high temperature

Ruozheng Wang, Juan Wang, Gang Niu, Qiang Wei, Shengli Wu, Cui Yu, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233504 (2022)
https://doi.org/10.1063/5.0115980
Published: December 2022
View article titled, The clarification of leakage conduction mechanism of HfO<sub>2</sub>/SiN<sub>x</sub> stacked a-IGZO TFT and its variation at high temperature
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Includes: Supplementary data
Journal Articles

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Wejdan S. AlGhamdi, Aiman Fakieh, Hendrik Faber, Yen-Hung Lin, Wei-Zhi Lin, Po-Yu Lu, Chien-Hao Liu, Khaled Nabil Salama, Thomas D. Anthopoulos
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233503 (2022)
https://doi.org/10.1063/5.0126935
Published: December 2022
View article titled, Impact of layer thickness on the operating characteristics of In<sub>2</sub>O<sub>3</sub>/ZnO heterojunction thin-film transistors
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Includes: Supplementary data
Journal Articles

Quantum confinement effects in amorphous In–Ga–Zn–O thin-film transistors with quantum well channel

Katsumi Abe, Toshio Kamiya, Hideo Hosono
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 222104 (2022)
https://doi.org/10.1063/5.0132431
Published: November 2022
View article titled, Quantum confinement effects in amorphous In–Ga–Zn–O thin-film transistors with quantum well channel
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Includes: Supplementary data