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Journal Articles

Mid-wavelength infrared photoconductive film synthesized from PbSe molecular ink

Mohammad M. Al Mahfuz, Rakina Islam, Yuxuan Zhang, Jinwook Baek, Junsung Park, Sunghwan Lee, Dong-Kyun Ko
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 203301 (2023)
https://doi.org/10.1063/5.0179127
Published: November 2023
View article titled, Mid-wavelength infrared photoconductive film synthesized from PbSe molecular ink
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Includes: Supplementary data
Journal Articles

Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

Wen-Chia Wu, Kuan-Ning Huang, Chien-Ying Su, Chi-Chung Kei, Cheng Huang Kuo, Chao-Hsin Chien
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 183101 (2023)
https://doi.org/10.1063/5.0170017
Published: October 2023
View article titled, Wafer-scale MOCVD grown WS<sub>2</sub> with normally off transistor behavior and its general application on different amorphous substrates
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Journal Articles

Nanotip-based CMOS photosensitive architecture for highly sensitive near-infrared imaging detection

Taige Liu, Jiashuo Shi, Shenghua Duan, Zhe Wang, Xinyu Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 143503 (2023)
https://doi.org/10.1063/5.0168471
Published: October 2023
View article titled, Nanotip-based CMOS photosensitive architecture for highly sensitive near-infrared imaging detection
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Includes: Supplementary data
Journal Articles

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Shuyu Wen, Mohd Saif Shaikh, Oliver Steuer, Slawomir Prucnal, Jörg Grenzer, René Hübner, Marcin Turek, Krzysztof Pyszniak, Sebastian Reiter, Inga Anita Fischer, Yordan M. Georgiev, Manfred Helm, Shaoteng Wu, Jun-Wei Luo, Shengqiang Zhou, Yonder Berencén
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 081109 (2023)
https://doi.org/10.1063/5.0166799
Published: August 2023
View article titled, Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
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Includes: Supplementary data
Journal Articles

Voltage-controlled magnetic anisotropy based physical unclonable function

Andrea Meo, Esteban Garzón, Raffaele De Rose, Giovanni Finocchio, Marco Lanuzza, Mario Carpentieri
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 062405 (2023)
https://doi.org/10.1063/5.0166164
Published: August 2023
View article titled, Voltage-controlled magnetic anisotropy based physical unclonable function
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Journal Articles

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

K. Nozawa, T. Ishiyama, T. Nishida, N. Saitoh, N. Yoshizawa, T. Suemasu, K. Toko
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 201901 (2023)
https://doi.org/10.1063/5.0152677
Published: May 2023
View article titled, High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures
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Journal Articles

High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

Xinyu Liu, Hao Ning, Jianhang Lv, Lixiang Liu, Li Peng, Feng Tian, Srikrishna Chanakya Bodepudi, Xiaochen Wang, Xiaoxue Cao, Yunfan Dong, Wenzhang Fang, Shaoxiong Wu, Huan Hu, Bin Yu, Yang Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 071105 (2023)
https://doi.org/10.1063/5.0132028
Published: February 2023
View article titled, High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared
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Journal Articles

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

J. Zach Lentz, J. C. Woicik, Matthew Bergschneider, Ryan Davis, Apurva Mehta, Kyeongjae Cho, Paul C. McIntyre
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062103 (2023)
https://doi.org/10.1063/5.0136746
Published: February 2023
View article titled, Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)
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Includes: Supplementary data
Journal Articles

CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

Aleksandra A. Koroleva, Dmitry S. Kuzmichev, Maxim G. Kozodaev, Ivan V. Zabrosaev, Evgeny V. Korostylev, Andrey M. Markeev
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 022905 (2023)
https://doi.org/10.1063/5.0138218
Published: January 2023
View article titled, CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems
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Includes: Supplementary data
Journal Articles

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Yong Chan Jung, Jin-Hyun Kim, Heber Hernandez-Arriaga, Jaidah Mohan, Su Min Hwang, Dan N. Le, Akshay Sahota, Harrison Sejoon Kim, Kihyun Kim, Rino Choi, Chang-Yong Nam, Daniel Alvarez, Jr., Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 222901 (2022)
https://doi.org/10.1063/5.0126695
Published: November 2022
View article titled, Robust low-temperature (350 °C) ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> fabricated using anhydrous H<sub>2</sub>O<sub>2</sub> as the ALD oxidant
Open the PDF for Robust low-temperature (350 °C) ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> fabricated using anhydrous H<sub>2</sub>O<sub>2</sub> as the ALD oxidant in another window
Journal Articles

Understanding synaptic characteristics of nonvolatile analog redox transistor based on mobile ion-modulated-electrolyte thickness model for neuromorphic applications

Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong,