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Journal Articles
Quantitative characterization of ZrO2 gate dielectric interface with tellurium
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 232110 (2025)
Published: June 2025
Journal Articles
Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 221603 (2025)
Published: June 2025
Journal Articles
Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 152108 (2025)
Published: April 2025
Journal Articles
Journal Articles
Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 081603 (2025)
Published: February 2025
Journal Articles
Evaluation of bias-dependent band structure changes in metal–oxide–semiconductor structures with varying doping concentrations using laboratory hard x-ray photoelectron spectroscopy
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 072103 (2025)
Published: February 2025
Journal Articles
GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 022113 (2025)
Published: January 2025
Journal Articles
Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
Published: January 2025
Journal Articles
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
Published: December 2024
Journal Articles
P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors
Available to PurchaseMahalaxmi Patil, Subrat K. Pradhan, Vivek K. Shukla, Padmnabh Rai, Jayanti Paul, Aaqib H. Sheikh, Bazila Parvez, Swaroop Ganguly, Kasturi Saha, Dipankar Saha
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 252104 (2024)
Published: December 2024
Journal Articles
Monolithic β-Ga2O3 bidirectional dual-gate MOSFET
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 253502 (2024)
Published: December 2024
Journal Articles
Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment
Available to PurchaseDaimotsu Kato, Yosuke Kajiwara, Hiroshi Ono, Aya Shindome, Po-Chin Huang, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 242108 (2024)
Published: December 2024
Journal Articles
Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
Published: October 2024
Journal Articles
Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
Available to PurchaseHiroko Iguchi, Tetsuo Narita, Kenji Ito, Shiro Iwasaki, Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Daigo Kikuta
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 022104 (2024)
Published: July 2024
Journal Articles
Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 262103 (2024)
Published: June 2024
Journal Articles
Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
Available to PurchaseD. Lidsky, C. R. Allemang, T. Hutchins-Delgado, A. R. James, P. Allen, M. Saleh Ziabari, P. Sharma, A. M. Bradicich, W. C.-H. Kuo, S. D. House, T. M. Lu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 233503 (2024)
Published: June 2024
Journal Articles
Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor
Available to PurchaseJonathan Parion, Romain Scaffidi, Filip Duerinckx, Hariharsudan Sivaramakrishnan Radhakrishnan, Denis Flandre, Jef Poortmans, Bart Vermang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 142901 (2024)
Published: April 2024
Journal Articles
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Walter Gonçalez Filho, Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Anurag Vohra, Stefaan Decoutere, Benoit Bakeroot
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 113502 (2024)
Published: March 2024
Journal Articles
Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 103504 (2024)
Published: March 2024
Journal Articles
Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
Available to PurchaseCarl Peterson, Fikadu Alema, Arkka Bhattacharyya, Ziliang Ling, Saurav Roy, Andrei Osinsky, Sriram Krishnamoorthy
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 082104 (2024)
Published: February 2024
Includes: Supplementary data
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