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Journal Articles

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

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Kyeong-Jae Byeon, I. K. M. Reaz Rahman, Inha Kim, Howoo Park, Ali Javey
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232110 (2025)
https://doi.org/10.1063/5.0267586
Published: June 2025
View articletitled, Quantitative characterization of ZrO2 gate dielectric interface with tellurium
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Journal Articles

Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

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Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 221603 (2025)
https://doi.org/10.1063/5.0268937
Published: June 2025
View articletitled, Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces
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Journal Articles

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

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Shubo Wei, Zifan Hong, Chengchao Li, Mingtao Long, Ying Li, Yujian Chen, Feng Zhang, Weifeng Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152108 (2025)
https://doi.org/10.1063/5.0254888
Published: April 2025
View articletitled, Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment
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Journal Articles

Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack

Open Access
Yoshiharu Kirihara, Shunichi Ito, Akira Yasui, Ryousuke Ishikawa, Hiroshi Nohira
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101601 (2025)
https://doi.org/10.1063/5.0259875
Published: March 2025
View articletitled, Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack
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Journal Articles

Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation

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Renqiang Zhu, Jinpei Lin, Hong Gu, Lixuan Chen, Bo Zhang, Hezhou Liu, Xinke Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 081603 (2025)
https://doi.org/10.1063/5.0245266
Published: February 2025
View articletitled, Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation
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Journal Articles

Evaluation of bias-dependent band structure changes in metal–oxide–semiconductor structures with varying doping concentrations using laboratory hard x-ray photoelectron spectroscopy

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Takuya Minowa, Koji Usuda, Ryo Yokogawa, Atsushi Ogura
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 072103 (2025)
https://doi.org/10.1063/5.0245254
Published: February 2025
View articletitled, Evaluation of bias-dependent band structure changes in metal–oxide–semiconductor structures with varying doping concentrations using laboratory hard x-ray photoelectron spectroscopy
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Journal Articles

GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition

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Masahiro Hara, Takuma Kobayashi, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022113 (2025)
https://doi.org/10.1063/5.0246368
Published: January 2025
View articletitled, GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition
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Journal Articles

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

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Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
https://doi.org/10.1063/5.0245289
Published: January 2025
View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal Articles

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

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Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
https://doi.org/10.1063/5.0245907
Published: December 2024
View articletitled, Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal Articles

P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors

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Mahalaxmi Patil, Subrat K. Pradhan, Vivek K. Shukla, Padmnabh Rai, Jayanti Paul, Aaqib H. Sheikh, Bazila Parvez, Swaroop Ganguly, Kasturi Saha, Dipankar Saha
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252104 (2024)
https://doi.org/10.1063/5.0231002
Published: December 2024
View articletitled, P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors
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Journal Articles

Monolithic β-Ga2O3 bidirectional dual-gate MOSFET

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Pooja Sharma, Poulomi Chakrabarty, Prabhat Prajapati, Sera Sen, Saurabh Lodha
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253502 (2024)
https://doi.org/10.1063/5.0232679
Published: December 2024
View articletitled, Monolithic β-Ga2O3 bidirectional dual-gate MOSFET
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Journal Articles

Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment

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Daimotsu Kato, Yosuke Kajiwara, Hiroshi Ono, Aya Shindome, Po-Chin Huang, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242108 (2024)
https://doi.org/10.1063/5.0219785
Published: December 2024
View articletitled, Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment
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Journal Articles

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

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Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
https://doi.org/10.1063/5.0223569
Published: October 2024
View articletitled, Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal Articles

Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

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Hiroko Iguchi, Tetsuo Narita, Kenji Ito, Shiro Iwasaki, Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Daigo Kikuta
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 022104 (2024)
https://doi.org/10.1063/5.0214698
Published: July 2024
View articletitled, Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
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Journal Articles

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

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Jinjin Shao, Ruiqiang Song, Shaoqing Li, Yang Guo, Yaqing Chi, Bin Liang, Jianjun Chen, Yaohua Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 262103 (2024)
https://doi.org/10.1063/5.0213157
Published: June 2024
View articletitled, Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions
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Journal Articles

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

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D. Lidsky, C. R. Allemang, T. Hutchins-Delgado, A. R. James, P. Allen, M. Saleh Ziabari, P. Sharma, A. M. Bradicich, W. C.-H. Kuo, S. D. House, T. M. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233503 (2024)
https://doi.org/10.1063/5.0199583
Published: June 2024
View articletitled, Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
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Journal Articles

Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

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Jonathan Parion, Romain Scaffidi, Filip Duerinckx, Hariharsudan Sivaramakrishnan Radhakrishnan, Denis Flandre, Jef Poortmans, Bart Vermang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142901 (2024)
https://doi.org/10.1063/5.0203484
Published: April 2024
View articletitled, Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor
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Journal Articles

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

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Walter Gonçalez Filho, Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Anurag Vohra, Stefaan Decoutere, Benoit Bakeroot
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 113502 (2024)
https://doi.org/10.1063/5.0191973
Published: March 2024
View articletitled, Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
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Journal Articles

Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

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Tetsuo Narita, Kenji Ito, Hiroko Iguchi, Shiro Iwasaki, Kazuyoshi Tomita, Daigo Kikuta
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 103504 (2024)
https://doi.org/10.1063/5.0191066
Published: March 2024
View articletitled, Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
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Journal Articles

Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates

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Carl Peterson, Fikadu Alema, Arkka Bhattacharyya, Ziliang Ling, Saurav Roy, Andrei Osinsky, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 082104 (2024)
https://doi.org/10.1063/5.0187989
Published: February 2024
View articletitled, Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
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Includes: Supplementary data