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Journal Articles

Layered semimetal electrodes for future heterogeneous electronics

Bubunu Biswal, Ramesh Rajarapu, Saroj Poudyal, Renu Yadav, Prahalad Kanti Barman, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 113102 (2023)
https://doi.org/10.1063/5.0164063
Published: September 2023
View article titled, Layered semimetal electrodes for future heterogeneous electronics
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Includes: Supplementary data
Journal Articles

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

H. Tetzner, W. Seifert, O. Skibitzki, Y. Yamamoto, M. Lisker, M. M. Mirza, I. A. Fischer, D. J. Paul, Monica De Seta, G. Capellini
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 243503 (2023)
https://doi.org/10.1063/5.0152962
Published: June 2023
View article titled, Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)
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Journal Articles

Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Owen Gauthier, Sébastien Haendler, Quentin Rafhay, Christoforos Theodorou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233503 (2023)
https://doi.org/10.1063/5.0152734
Published: June 2023
View article titled, Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs
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Journal Articles

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

D. M. Fleetwood
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173504 (2023)
https://doi.org/10.1063/5.0146549
Published: April 2023
View article titled, Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
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Journal Articles

High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks

Junzhe Kang, Kai Xu, Hanwool Lee, Souvik Bhattacharya, Zijing Zhao, Zhiyu Wang, R. Mohan Sankaran, Wenjuan Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 082906 (2023)
https://doi.org/10.1063/5.0134729
Published: February 2023
View article titled, High I<sub>on</sub>/I<sub>off</sub> ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO<sub>2</sub>/SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> gate stacks
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Includes: Supplementary data
Journal Articles

Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy

Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 052101 (2023)
https://doi.org/10.1063/5.0136265
Published: January 2023
View article titled, Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Hongyu Liu, Jianing Li, Yuanjie Lv, Yuangang Wang, Xiaoli Lu, Shaobo Dun, Tingting Han, Hongyu Guo, Aimin Bu, Xiaohua Ma, Zhihong Feng, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 202101 (2022)
https://doi.org/10.1063/5.0119694
Published: November 2022
View article titled, Improved electrical performance of lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs utilizing slanted fin channel structure
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Journal Articles

Low voltage AC electroluminescence in silicon MOS capacitors

I. K. M. Reaz Rahman, Shiekh Zia Uddin, Hyungjin Kim, Naoki Higashitarumizu, Ali Javey
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 193502 (2022)
https://doi.org/10.1063/5.0120507
Published: November 2022
View article titled, Low voltage AC electroluminescence in silicon MOS capacitors
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Includes: Supplementary data
Journal Articles

Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

D. M. Fleetwood
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 070503 (2022)
https://doi.org/10.1063/5.0105173
Published: August 2022
View article titled, Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
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Journal Articles

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

J. Cañas, C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez, E. Gheeraert
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072101 (2022)
https://doi.org/10.1063/5.0103037
Published: August 2022
View article titled, High quality SiO<sub>2</sub>/diamond interface in O-terminated p-type diamond MOS capacitors
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Journal Articles

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062104 (2022)
https://doi.org/10.1063/5.0095468
Published: August 2022
View article titled, Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates
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Journal Articles

As-deposited ferroelectric HZO on a III–V semiconductor

André Andersen, Anton E. O. Persson, Lars-Erik Wernersson
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 012901 (2022)
https://doi.org/10.1063/5.0097462
Published: July 2022
View article titled, As-deposited ferroelectric HZO on a III–V semiconductor
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Includes: Supplementary data
Journal Articles

Logarithmic trapping and detrapping in β -Ga2O3 MOSFETs: Experimental analysis and modeling

Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Würfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 163502 (2022)
https://doi.org/10.1063/5.0085068
Published: April 2022
View article titled, Logarithmic trapping and detrapping in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> MOSFETs: Experimental analysis and modeling
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Journal Articles

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, M. Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 143501 (2022)
https://doi.org/10.1063/5.0087245
Published: April 2022
View article titled, Study and characterization of GaN MOS capacitors: Planar vs trench topographies
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Includes: Supplementary data
Journal Articles

Work function of van der Waals topological semimetals: Experiment and theory

Bubunu Biswal, Shashi B. Mishra, Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, Prahalad Kanti Barman, Khade Ramdas Pandurang, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 093101 (2022)
https://doi.org/10.1063/5.0079032
Published: March 2022
View article titled, Work function of van der Waals topological semimetals: Experiment and theory
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Includes: Supplementary data
Journal Articles

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082103 (2022)
https://doi.org/10.1063/5.0081198
Published: February 2022
View article titled, Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
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Journal Articles

Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 064001 (2022)
https://doi.org/10.1063/5.0078189
Published: February 2022
View article titled, Electrical detection of <em>T</em><sub>V2a</sub>-type silicon vacancy spin defect in 4H-SiC MOSFETs
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Journal Articles

Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

HoHyun Im, Geonyeop Lee, Hyunik Park, Dongryul Lee, Jihyun Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 023102 (2022)
https://doi.org/10.1063/5.0075162
Published: January 2022
View article titled, Capacitance–voltage characteristics of Pt/hBN/WSe<sub>2</sub> metal–insulator–semiconductor capacitor doped by charge-transfer process
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Includes: Supplementary data
Journal Articles

Optoelectronic sampling of ultrafast electric transients with single quantum dots

Alex Widhalm, Sebastian Krehs, Dustin Siebert, Nand Lal Sharma, Timo Langer, Björn Jonas, Dirk Reuter, Andreas Thiede, Jens Förstner, Artur Zrenner
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 181109 (2021)
https://doi.org/10.1063/5.0061358
Published: November 2021
View article titled, Optoelectronic sampling of ultrafast electric transients with single quantum dots
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Includes: Supplementary data
Journal Articles

Effects of 29Si and 1H on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

Elias B. Frantz, David J. Michalak, Nicholas J. Harmon, Eric M. Henry, Michael E. Flatté, Sean W. King, James S. Clarke, Patrick M. Lenahan
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 184101 (2021)
https://doi.org/10.1063/5.0066640
Published: November 2021
View article titled, Effects of <sup>29</sup>Si and <sup>1</sup>H on the near-zero field magnetoresistance response of Si/SiO<sub>2</sub> interface states: Implications for oxide tunneling currents
Open the PDF for Effects of <sup>29</sup>Si and <sup>1</sup>H on the near-zero field magnetoresistance response of Si/SiO<sub>2</sub> interface states: Implications for oxide tunneling currents in another window