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Journal Articles

Insulating tip for scanning near-field microwave microscopes: Application to van der Waals semiconductor imaging

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Kohei Yamasue, Koki Takano, Taiyo Ishizuka, Yasuo Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242107 (2025)
https://doi.org/10.1063/5.0268493
Published: June 2025
View articletitled, Insulating tip for scanning near-field microwave microscopes: Application to van der Waals semiconductor imaging
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Journal Articles

High-linearity on-chip GaN-on-Si temperature sensors based on an E-mode-compatible process

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Xingchen Xiao, Junbo Liu, Wensong Zou, Pu Hong, Yang Xiang, Catherine Erine, Luca Nela, Jun Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 233502 (2025)
https://doi.org/10.1063/5.0259389
Published: June 2025
View articletitled, High-linearity on-chip GaN-on-Si temperature sensors based on an E-mode-compatible process
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Journal Articles

Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

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Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 221603 (2025)
https://doi.org/10.1063/5.0268937
Published: June 2025
View articletitled, Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces
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Journal Articles

Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing

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Chi-Yi Kao, Jenn-Gwo Hwu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 213504 (2025)
https://doi.org/10.1063/5.0257074
Published: May 2025
View articletitled, Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing
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Journal Articles

Efficiency droop contributors in InGaN green light emitting diodes

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P. Thirasuntrakul, J. Li, J. Lee, Y. C. Chiu, C. Bayram
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 211103 (2025)
https://doi.org/10.1063/5.0272756
Published: May 2025
View articletitled, Efficiency droop contributors in InGaN green light emitting diodes
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Journal Articles

AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers

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Masanobu Hiroki, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202108 (2025)
https://doi.org/10.1063/5.0268213
Published: May 2025
View articletitled, AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers
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Journal Articles

Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor

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Jan Lettens, Ilias Vandevenne, Marina Avramenko, Henk Vrielinck, Etienne Goovaerts, Peter Moens, Sofie Cambré
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202106 (2025)
https://doi.org/10.1063/5.0268307
Published: May 2025
View articletitled, Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor
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Journal Articles

Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

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Junmin Xue, Yu Li, Juan Xin, Yang Xiao, Heng Wang, Yujie Peng, Chen Wang, Zengyuan Wu, Qinqin Jing, Yaming Fan, Lihang Yin, Xiaodong Zhang, Yong Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181602 (2025)
https://doi.org/10.1063/5.0256227
Published: May 2025
View articletitled, Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system
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Journal Articles

Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate

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Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162105 (2025)
https://doi.org/10.1063/5.0268847
Published: April 2025
View articletitled, Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate
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Journal Articles

Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film

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Fengxin Liu, Qi Zhang, Yue Chen, Qiang Li, Xingye Zhang, Kang Gao, Kuan Kuang, Haohua Xu, Shiheng Liang, Chuansheng Liu, Mingkai Li, Yunbin He
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 153501 (2025)
https://doi.org/10.1063/5.0239201
Published: April 2025
View articletitled, Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film
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Journal Articles

Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements

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Qingru Wang, Yu Zhou, Xiaozhuang Lu, Xiaoning Zhan, Quan Dai, Jianxun Liu, Qian Li, Xinkun Zhang, Yamin Zhang, Qian Sun, Shiwei Feng, Zhihong Feng, Meixin Feng, Xin Chen, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 142102 (2025)
https://doi.org/10.1063/5.0263898
Published: April 2025
View articletitled, Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
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Journal Articles

Porous W2N fibrous nanograins and TiN nanopyramid framework for high-energy density flexible asymmetric supercapacitors

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Rajesh Kumar, Bhanu Ranjan, Davinder Kaur
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133902 (2025)
https://doi.org/10.1063/5.0257848
Published: April 2025
View articletitled, Porous W2N fibrous nanograins and TiN nanopyramid framework for high-energy density flexible asymmetric supercapacitors
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Journal Articles

Epitaxial high-K barrier AlBN/GaN HEMTs

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Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112906 (2025)
https://doi.org/10.1063/5.0235294
Published: March 2025
View articletitled, Epitaxial high-K barrier AlBN/GaN HEMTs
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Journal Articles

Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack

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Yoshiharu Kirihara, Shunichi Ito, Akira Yasui, Ryousuke Ishikawa, Hiroshi Nohira
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101601 (2025)
https://doi.org/10.1063/5.0259875
Published: March 2025
View articletitled, Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack
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Journal Articles

Characterizing self-heating dynamics using cyclostationary measurements

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SangHoon Shin, Muhammad Masuduzzaman, Muhammad Ashraful Alam
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082103 (2025)
https://doi.org/10.1063/5.0222652
Published: February 2025
View articletitled, Characterizing self-heating dynamics using cyclostationary measurements
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Journal Articles

Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors

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T. Iung, L. Pérez Ramírez, A. Gloskovskii, C.-Yi Cho, M.-Y. Lao, S. De, T.-H Hou, C. Lubin, M. Gros-Jean, N. Barrett
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062903 (2025)
https://doi.org/10.1063/5.0245595
Published: February 2025
View articletitled, Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors
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Journal Articles

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

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Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043501 (2025)
https://doi.org/10.1063/5.0245530
Published: January 2025
View articletitled, kV-class vertical p-n heterojunction rectifier based on ITO/diamond
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Journal Articles

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

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Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
https://doi.org/10.1063/5.0245289
Published: January 2025
View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal Articles

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

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Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
https://doi.org/10.1063/5.0245907
Published: December 2024
View articletitled, Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal Articles

P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors

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Mahalaxmi Patil, Subrat K. Pradhan, Vivek K. Shukla, Padmnabh Rai, Jayanti Paul, Aaqib H. Sheikh, Bazila Parvez, Swaroop Ganguly, Kasturi Saha, Dipankar Saha
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252104 (2024)
https://doi.org/10.1063/5.0231002
Published: December 2024
View articletitled, P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors
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