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Journal Articles

Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT

Editor’s Pick
Shivendra K. Rathaur, Abhisek Dixit, Edward Yi Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102104 (2024)
https://doi.org/10.1063/5.0211768
Published: September 2024
View article titled, Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT
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Journal Articles

Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

Anshu Gupta, Amit Vashist, Suvankar Chakraverty
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 091601 (2024)
https://doi.org/10.1063/5.0219906
Published: August 2024
View article titled, Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip
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Journal Articles

Investigation of interface traps in β -(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique

Fenfen Fenda Florena, Aboulaye Traoré, Hironori Okumura, Ryo Morita, Yun Jia, Takeaki Sakurai
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 093503 (2024)
https://doi.org/10.1063/5.0208449
Published: August 2024
View article titled, Investigation of interface traps in β -(AlGa)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterostructures by dynamic capacitance dispersion technique
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Journal Articles

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

Yi-Lin Chen, Qing Zhu, Meng Zhang, Min-Han Mi, Jie-Jie Zhu, Si-Yin Guo, Yu-Wei Zhou, Peng-Fei Wang, Can Gong, Zi-Yue Zhao, Xiao-Hua Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 063502 (2024)
https://doi.org/10.1063/5.0209130
Published: August 2024
View article titled, On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls
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Journal Articles

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Satish Shetty, Andrian V. Kuchuk, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Ayesha Hassan, Savannah R. Eisner, Nirosh M. Eldose, Dinesh Baral, Yuriy I Mazur, David Huitink, Debbie G. Senesky, H Alan Mantooth, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042105 (2024)
https://doi.org/10.1063/5.0213310
Published: July 2024
View article titled, Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
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Journal Articles

Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures

Arpit Sahu, Bazila Parvez, Mahalaxmi Patil, Subhajit Basak, Jyoti Sahu, Bhanu B. Upadhyay, Swaroop Ganguly, Dipankar Saha
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123507 (2024)
https://doi.org/10.1063/5.0179215
Published: March 2024
View article titled, Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures
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Includes: Supplementary data
Journal Articles

SiC-based high electron mobility transistor

Featured
Hiroyuki Sazawa, Akira Nakajima, Shigeyuki Kuboya, Hitoshi Umezawa, Tomohisa Kato, Yasunori Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 120601 (2024)
https://doi.org/10.1063/5.0202925
Published: March 2024
View article titled, SiC-based high electron mobility transistor
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Journal Articles

Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Valentin Garbe, Sarah Seidel, Alexander Schmid, Ulrich Bläß, Elke Meissner, Johannes Heitmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 203506 (2023)
https://doi.org/10.1063/5.0171168
Published: November 2023
View article titled, Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs
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Journal Articles

Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

T.-Y. Huang, J. Occena, C. Greenhill, T. Borrely, Y.-C. Yang, J. Hu, A. Chen, C. Zinn, K. Jenkins, L. Li, C. Kurdak, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 192105 (2023)
https://doi.org/10.1063/5.0172295
Published: November 2023
View article titled, Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces
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Includes: Supplementary data
Journal Articles

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Yan Wang, Jiahe Cao, Hanzhao Song, Chuang Zhang, Zhigao Xie, Yew Hoong Wong, Chee Keong Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142103 (2023)
https://doi.org/10.1063/5.0172161
Published: October 2023
View article titled, Polarization engineering of two-dimensional electron gas at ε-(Al<sub>x</sub>Ga<sub>1–x</sub>)<sub>2</sub>O<sub>3</sub>/ε-Ga<sub>2</sub>O<sub>3</sub> heterostructure
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Includes: Supplementary data
Journal Articles

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Shixiong Zhang, Ning Tang, Zhenhao Sun, Guoping Li, Teng Fan, Lei Fu, Yunfan Zhang, Jiayang Jiang, Peng Jin, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 132102 (2023)
https://doi.org/10.1063/5.0161465
Published: September 2023
View article titled, Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well
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Journal Articles

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, Lili Huo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 092105 (2023)
https://doi.org/10.1063/5.0147392
Published: September 2023
View article titled, Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state
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Journal Articles

Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT

Qianqian Luo, Kai Xiao, Min Li, Xuejun Yan, Jia Yang, Jianyu Deng, Wenhong Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 063902 (2023)
https://doi.org/10.1063/5.0158240
Published: August 2023
View article titled, Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT
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Includes: Supplementary data
Journal Articles

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212107 (2023)
https://doi.org/10.1063/5.0141198
Published: May 2023
View article titled, An accurate method to extract thermal resistance of GaN-on-Si HEMTs
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Includes: Supplementary data
Journal Articles

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092104 (2023)
https://doi.org/10.1063/5.0138939
Published: March 2023
View article titled, N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
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Journal Articles

Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit

Young-Seok Ghee, Bum-Kyu Kim, Suk-In Park, Jindong Song, Wan-Seop Kim, Myung-Ho Bae, Nam Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 043504 (2023)
https://doi.org/10.1063/5.0135114
Published: January 2023
View article titled, Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit
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Includes: Supplementary data
Journal Articles

Tunable rapid electron transport in titanium oxide thin films

Runze Li, Faguang Yan, Yongcheng Deng, Yaxuan Shang, Yu Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 011601 (2023)
https://doi.org/10.1063/5.0132959
Published: January 2023
View article titled, Tunable rapid electron transport in titanium oxide thin films
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Includes: Supplementary data
Journal Articles

Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO3 surface with BiFeO3 topping layer

Peerawat Laohana, Siwat Polin, Warakorn Jindata, Aissara Rasritat, Tanachat Eknapakul, Pimchanok Leuasoongnoen, Supree Pinitsoontorn, Pattanaphong Janphuang, Wittawat Saenrang, Worawat Meevasana
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 241601 (2022)
https://doi.org/10.1063/5.0123578
Published: December 2022
View article titled, Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO<sub>3</sub> surface with BiFeO<sub>3</sub> topping layer
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Includes: Supplementary data
Journal Articles

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233506 (2022)
https://doi.org/10.1063/5.0122097
Published: December 2022
View article titled, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
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Includes: Supplementary data
Journal Articles

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Heng Zhou, Yuanjie Lv, Mingyan Wang, Peng Cui, Zhaojun Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 212107 (2022)
https://doi.org/10.1063/5.0124626
Published: November 2022
View article titled, Study of electrical transport properties of GaN-based side-gate heterostructure transistors
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