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Journal Articles

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Shixiong Zhang, Ning Tang, Zhenhao Sun, Guoping Li, Teng Fan, Lei Fu, Yunfan Zhang, Jiayang Jiang, Peng Jin, Weikun Ge, Bo Shen

Appl. Phys. Lett. 123, 132102 (2023)

https://doi.org/10.1063/5.0161465

Published: September 2023

View article titled, Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Journal Articles

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, Lili Huo

Appl. Phys. Lett. 123, 092105 (2023)

https://doi.org/10.1063/5.0147392

Published: September 2023

View article titled, Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Journal Articles

Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT

Qianqian Luo, Kai Xiao, Min Li, Xuejun Yan, Jia Yang, Jianyu Deng, Wenhong Sun

Appl. Phys. Lett. 123, 063902 (2023)

https://doi.org/10.1063/5.0158240

Published: August 2023

View article titled, Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT

Includes: Supplementary data

Journal Articles

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta

Appl. Phys. Lett. 122, 212107 (2023)

https://doi.org/10.1063/5.0141198

Published: May 2023

View article titled, An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Includes: Supplementary data

Journal Articles

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing

Appl. Phys. Lett. 122, 092104 (2023)

https://doi.org/10.1063/5.0138939

Published: March 2023

View article titled, N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Journal Articles

Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit

Young-Seok Ghee, Bum-Kyu Kim, Suk-In Park, Jindong Song, Wan-Seop Kim, Myung-Ho Bae, Nam Kim

Appl. Phys. Lett. 122, 043504 (2023)

https://doi.org/10.1063/5.0135114

Published: January 2023

View article titled, Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit

Includes: Supplementary data

Journal Articles

Tunable rapid electron transport in titanium oxide thin films

Runze Li, Faguang Yan, Yongcheng Deng, Yaxuan Shang, Yu Sheng

Appl. Phys. Lett. 122, 011601 (2023)

https://doi.org/10.1063/5.0132959

Published: January 2023

View article titled, Tunable rapid electron transport in titanium oxide thin films

Includes: Supplementary data

Journal Articles

Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO₃ surface with BiFeO₃ topping layer

Peerawat Laohana, Siwat Polin, Warakorn Jindata, Aissara Rasritat, Tanachat Eknapakul, Pimchanok Leuasoongnoen, Supree Pinitsoontorn, Pattanaphong Janphuang, Wittawat Saenrang, Worawat Meevasana

Appl. Phys. Lett. 121, 241601 (2022)

https://doi.org/10.1063/5.0123578

Published: December 2022

View article titled, Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO3 surface with BiFeO3 topping layer

Includes: Supplementary data

Journal Articles

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Appl. Phys. Lett. 121, 233506 (2022)

https://doi.org/10.1063/5.0122097

Published: December 2022

View article titled, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Includes: Supplementary data

Journal Articles

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Heng Zhou, Yuanjie Lv, Mingyan Wang, Peng Cui, Zhaojun Lin

Appl. Phys. Lett. 121, 212107 (2022)

https://doi.org/10.1063/5.0124626

Published: November 2022

View article titled, Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Journal Articles

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Haoran Qie, Jianxun Liu, Qian li, Qian Sun, Hongwei Gao, Xiujian Sun, Yu Zhou, Hui Yang

Appl. Phys. Lett. 121, 212106 (2022)

https://doi.org/10.1063/5.0129997

Published: November 2022

View article titled, Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Journal Articles

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yanjie Li, Yamin Zhang, Lixing Zhou, Meng Zhang

Appl. Phys. Lett. 121, 153501 (2022)

https://doi.org/10.1063/5.0107459

Published: October 2022

View article titled, Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Journal Articles

Plasma instability in graphene field-effect transistors with a shifted gate

J. Crabb, X. Cantos Roman, J. M. Jornet, G. R. Aizin

Appl. Phys. Lett. 121, 143502 (2022)

https://doi.org/10.1063/5.0111560

Published: October 2022

View article titled, Plasma instability in graphene field-effect transistors with a shifted gate

Journal Articles

Fractional-unit-cell-doped spinel/perovskite oxide interfaces with switchable carrier conduction

Yulin Gan, Yu Zhang, Sicong Jiang, Hongrui Zhang, Xiangxiang Guan, Lei Yan, Fengxia Hu, Richeng Yu, Jirong Sun, Hong Ding, Kesong Yang, Yunzhong Chen, Baogen Shen

Appl. Phys. Lett. 121, 111601 (2022)

https://doi.org/10.1063/5.0109188

Published: September 2022

View article titled, Fractional-unit-cell-doped spinel/perovskite oxide interfaces with switchable carrier conduction

Includes: Supplementary data

Journal Articles

Gate-free tunable 2D/2D heterojunction composed of MoTe₂ and 2D electron gas at the surface of KTaO₃

Jie Qiu, Ju Li, Xiaowei Zhou, Bocheng Li, Xiaochen Tian, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing, Guozhen Liu

Appl. Phys. Lett. 121, 071602 (2022)

https://doi.org/10.1063/5.0100028

Published: August 2022

View article titled, Gate-free tunable 2D/2D heterojunction composed of MoTe2 and 2D electron gas at the surface of KTaO3

Journal Articles

Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Yijun Dai, Wei Guo, Li Chen, Houqiang Xu, Feras AlQatari, Chenyu Guo, Xianchun Peng, Ke Tang, Che-Hao Liao, Xiaohang Li, Jichun Ye

Appl. Phys. Lett. 121, 012104 (2022)

https://doi.org/10.1063/5.0097037

Published: July 2022

View article titled, Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Includes: Supplementary data

Journal Articles

Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Hao Yu, Bertrand Parvais, Ming Zhao, Raul Rodriguez, Uthayasankaran Peralagu, Alireza Alian, Nadine Collaert

Appl. Phys. Lett. 120, 213504 (2022)

https://doi.org/10.1063/5.0093839

Published: May 2022

View article titled, Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Journal Articles

A perspective on multi-channel technology for the next-generation of GaN power devices

Luca Nela, Ming Xiao, Yuhao Zhang, Elison Matioli

Appl. Phys. Lett. 120, 190501 (2022)

https://doi.org/10.1063/5.0086978

Published: May 2022

View article titled, A perspective on multi-channel technology for the next-generation of GaN power devices

Journal Articles

Wafer-scale low-disorder 2DEG in ²⁸Si/SiGe without an epitaxial Si cap

Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi, Mario Lodari, Amir Sammak, Giordano Scappucci

Appl. Phys. Lett. 120, 184003 (2022)

https://doi.org/10.1063/5.0088576

Published: May 2022

View article titled, Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Includes: Supplementary data

Journal Articles

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Zheyang Zheng, Tao Chen, Li Zhang, Wenjie Song, Kevin J. Chen

Appl. Phys. Lett. 120, 152102 (2022)

https://doi.org/10.1063/5.0086954

Published: April 2022

View article titled, Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

NARROW

Topics

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Fidelity of counting the transferred electrons in a GaAs-based monolithic single-electron pump and transistor system with a charge-lock feedback circuit

Tunable rapid electron transport in titanium oxide thin films

Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO₃ surface with BiFeO₃ topping layer

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Plasma instability in graphene field-effect transistors with a shifted gate

Fractional-unit-cell-doped spinel/perovskite oxide interfaces with switchable carrier conduction

Gate-free tunable 2D/2D heterojunction composed of MoTe₂ and 2D electron gas at the surface of KTaO₃

Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation

Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

A perspective on multi-channel technology for the next-generation of GaN power devices

Wafer-scale low-disorder 2DEG in ²⁸Si/SiGe without an epitaxial Si cap

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

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