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Journal Articles

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

Yifan Gao, Xinwei Cai, Shuo Li, Qiang Wu, Guangyang Lin, Cheng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 081102 (2023)
https://doi.org/10.1063/5.0155877
Published: August 2023
View article titled, High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection
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Journal Articles

Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

Owen Gauthier, Sébastien Haendler, Quentin Rafhay, Christoforos Theodorou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233503 (2023)
https://doi.org/10.1063/5.0152734
Published: June 2023
View article titled, Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs
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Journal Articles

Compact multimode silicon racetrack resonators for high-efficiency tunable Raman lasers

Yaojing Zhang, Keyi Zhong, Hon Ki Tsang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 081101 (2023)
https://doi.org/10.1063/5.0123230
Published: February 2023
View article titled, Compact multimode silicon racetrack resonators for high-efficiency tunable Raman lasers
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Includes: Supplementary data
Journal Articles

On-chip converter of waveguide polarization mode to free-space optical angular momentum mode

Aiping liu, Wei Peng, Zirui Li, Xingping Zhou, Xi-Feng Ren, Chang-Ling Zou, Qin Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 241106 (2022)
https://doi.org/10.1063/5.0132258
Published: December 2022
View article titled, On-chip converter of waveguide polarization mode to free-space optical angular momentum mode
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Journal Articles

Experimental observation of higher-order anapoles in individual silicon disks under in-plane illumination

Evelyn Díaz-Escobar, Ángela I. Barreda, Amadeu Griol, Alejandro Martínez
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 201105 (2022)
https://doi.org/10.1063/5.0108438
Published: November 2022
View article titled, Experimental observation of higher-order anapoles in individual silicon disks under in-plane illumination
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Includes: Supplementary data
Journal Articles

Nonlinear coupling of linearly uncoupled resonators through a Mach–Zehnder interferometer

Federico Andrea Sabattoli, Houssein El Dirani, Laurène Youssef, Linda Gianini, Luca Zatti, Francesco Garrisi, Davide Grassani, Camille Petit-Etienne, Erwine Pargon, J. E. Sipe, Marco Liscidini, Corrado Sciancalepore, Daniele Bajoni, Matteo Galli
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 201101 (2022)
https://doi.org/10.1063/5.0109392
Published: November 2022
View article titled, Nonlinear coupling of linearly uncoupled resonators through a Mach–Zehnder interferometer
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Journal Articles

Single G centers in silicon fabricated by co-implantation with carbon and proton

Yoann Baron, Alrik Durand, Tobias Herzig, Mario Khoury, Sébastien Pezzagna, Jan Meijer, Isabelle Robert-Philip, Marco Abbarchi, Jean-Michel Hartmann, Shay Reboh, Jean-Michel Gérard, Vincent Jacques, Guillaume Cassabois, Anaïs Dréau
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 084003 (2022)
https://doi.org/10.1063/5.0097407
Published: August 2022
View article titled, Single G centers in silicon fabricated by co-implantation with carbon and proton
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Includes: Supplementary data
Journal Articles

Graphene/SOI-based self-powered Schottky barrier photodiode array

A. Yanilmaz, M. Fidan, O. Unverdi, C. Çelebi
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 011105 (2022)
https://doi.org/10.1063/5.0092833
Published: July 2022
View article titled, Graphene/SOI-based self-powered Schottky barrier photodiode array
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Includes: Supplementary data
Journal Articles

SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure

Kevin Froberger, Benjamin Walter, Melanie Lavancier, Romain Peretti, Guillaume Ducournau, Jean-François Lampin, Marc Faucher, Stefano Barbieri
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 261103 (2022)
https://doi.org/10.1063/5.0095126
Published: June 2022
View article titled, SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure
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Includes: Supplementary data
Journal Articles

Robust technology computer-aided design of gated quantum dots at cryogenic temperature

Félix Beaudoin, Pericles Philippopoulos, Chenyi Zhou, Ioanna Kriekouki, Michel Pioro-Ladrière, Hong Guo, Philippe Galy
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 264001 (2022)
https://doi.org/10.1063/5.0097202
Published: June 2022
View article titled, Robust technology computer-aided design of gated quantum dots at cryogenic temperature
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Includes: Supplementary data
Journal Articles

Thermal characterization of direct wafer bonded Si-on-SiC

Daniel E. Field, James W. Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter M. Gammon, Vishal A. Shah, Martin Kuball
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 113503 (2022)
https://doi.org/10.1063/5.0080668
Published: March 2022
View article titled, Thermal characterization of direct wafer bonded Si-on-SiC
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Journal Articles

Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device

K. Stockbridge, N. Deßmann, V. Eless, T. Peach, B. N. Murdin, S. K. Clowes
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 073503 (2022)
https://doi.org/10.1063/5.0079560
Published: February 2022
View article titled, Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device
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Journal Articles

Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers

Zhengyi He, Guanglin Zhang, Shan Zhang, Xiaoqiang Feng, Zhiduo Liu, Gang Wang, Siwei Yang, Guqiao Ding
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 232104 (2021)
https://doi.org/10.1063/5.0074703
Published: December 2021
View article titled, Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers
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Includes: Supplementary data
Journal Articles

Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device

Stephanie Bauer, Dongze Wang, Niklas Hoppe, Cornelius Nawrath, Julius Fischer, Norbert Witz, Mathias Kaschel, Christian Schweikert, Michael Jetter, Simone L. Portalupi, Manfred Berroth, Peter Michler
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 211101 (2021)
https://doi.org/10.1063/5.0067749
Published: November 2021
View article titled, Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device
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Journal Articles

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle M. L. Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 164002 (2021)
https://doi.org/10.1063/5.0040259
Published: April 2021
View article titled, Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
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Includes: Supplementary data
Journal Articles

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

M. Tsuji, M. Murata, A. Yamamoto, T. Suemasu, K. Toko
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 162103 (2020)
https://doi.org/10.1063/5.0021880
Published: October 2020
View article titled, Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange
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Journal Articles

A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si(111) surfaces

L. D. Robertson, B. E. Kane
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 151603 (2020)
https://doi.org/10.1063/5.0024842
Published: October 2020
View article titled, A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si(111) surfaces
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Journal Articles

Temperature dependence of hole transport properties through physically defined silicon quantum dots

N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, T. Kodera
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 094001 (2020)
https://doi.org/10.1063/5.0010981
Published: August 2020
View article titled, Temperature dependence of hole transport properties through physically defined silicon quantum dots
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Includes: Supplementary data
Journal Articles

Experimental demonstration of silicon photonic devices optimized by a flexible and deterministic pixel-by-pixel technique

Salim Boutami, Karim Hassan, C. Dupré, L. Baud, Shanhui Fan
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 071104 (2020)
https://doi.org/10.1063/5.0013558
Published: August 2020
View article titled, Experimental demonstration of silicon photonic devices optimized by a flexible and deterministic pixel-by-pixel technique
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Journal Articles

Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, T. Kodera
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 074001 (2020)
https://doi.org/10.1063/5.0010906
Published: August 2020
View article titled, Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
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