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Experimental study of the nonlinear distortion of non-reciprocal transmission in nonlinear parity-time symmetric LC resonators

Yi Zhou, Hao-Yan Wang, Li-Feng Wang, Lei Dong, Qing-An Huang

Appl. Phys. Lett. 122, 233301 (2023)

https://doi.org/10.1063/5.0147723

Published: June 2023

View articletitled, Experimental study of the nonlinear distortion of non-reciprocal transmission in nonlinear parity-time symmetric LC resonators

Includes: Supplementary data

Journal Articles

Preparation of degenerate n-type Al_xGa₁₋_xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Yuto Nishikawa, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Appl. Phys. Lett. 122, 232102 (2023)

https://doi.org/10.1063/5.0144418

Published: June 2023

View articletitled, Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Includes: Supplementary data

Journal Articles

Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer

Atsushi Shimbori, Alex Q. Huang

Appl. Phys. Lett. 120, 122103 (2022)

https://doi.org/10.1063/5.0081106

Published: March 2022

View articletitled, Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer

Journal Articles

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Yuwei Zhou, Minhan Mi, Mei Yang, Yutong Han, Pengfei Wang, Yilin Chen, Jielong Liu, Can Gong, Yiwei Lu, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 120, 062104 (2022)

https://doi.org/10.1063/5.0079359

Published: February 2022

View articletitled, High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Journal Articles

Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

C. J. Zhou, J. J. Wang, J. C. Guo, C. Yu, Z. Z. He, Q. B. Liu, X. D. Gao, S. J. Cai, Z. H. Feng

Appl. Phys. Lett. 114, 063501 (2019)

https://doi.org/10.1063/1.5066052

Published: February 2019

View articletitled, Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

Includes: Supplementary data

Journal Articles

Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures

Hyeong Wook Kim, Eok Su Kim, Joon Seok Park, Jun Hyung Lim, Bo Sung Kim

Appl. Phys. Lett. 113, 022104 (2018)

https://doi.org/10.1063/1.5027373

Published: July 2018

View articletitled, Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures

Journal Articles

Probing material conductivity in two-terminal devices by resistance difference

Yang Lu, I-Wei Chen

Appl. Phys. Lett. 111, 083501 (2017)

https://doi.org/10.1063/1.5000150

Published: August 2017

View articletitled, Probing material conductivity in two-terminal devices by resistance difference

Journal Articles

Resonant and resistive dual-mode uncooled infrared detectors toward expanded dynamic range and high linearity

Xin Li, Ji Liang, Hongxiang Zhang, Xing Yang, Hao Zhang, Wei Pang, Menglun Zhang

Appl. Phys. Lett. 110, 263502 (2017)

https://doi.org/10.1063/1.4990285

Published: June 2017

View articletitled, Resonant and resistive dual-mode uncooled infrared detectors toward expanded dynamic range and high linearity

Journal Articles

Front surface field formation for majority carriers by functional p-NiO layer employed Si solar cell

Dipal B. Patel, Hong-Sik Kim, Malkeshkumar Patel, Khushbu R. Chauhan, Jeong Eun Park, Donggun Lim, Joondong Kim

Appl. Phys. Lett. 109, 133902 (2016)

https://doi.org/10.1063/1.4963259

Published: September 2016

View articletitled, Front surface field formation for majority carriers by functional p-NiO layer employed Si solar cell

Includes: Supplementary data

Journal Articles

Electrically tunable metasurface absorber based on dissipating behavior of embedded varactors

Zhangjie Luo, Jiang Long, Xing Chen, Daniel Sievenpiper

Appl. Phys. Lett. 109, 071107 (2016)

https://doi.org/10.1063/1.4961367

Published: August 2016

View articletitled, Electrically tunable metasurface absorber based on dissipating behavior of embedded varactors

Journal Articles

Accurate expressions for solar cell fill factors including series and shunt resistances

Martin A. Green

Appl. Phys. Lett. 108, 081111 (2016)

https://doi.org/10.1063/1.4942660

Published: February 2016

View articletitled, Accurate expressions for solar cell fill factors including series and shunt resistances

Journal Articles

Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Takuji Hosoi, Yuya Minoura, Ryohei Asahara, Hiroshi Oka, Takayoshi Shimura, Heiji Watanabe

Appl. Phys. Lett. 107, 252104 (2015)

https://doi.org/10.1063/1.4938397

Published: December 2015

View articletitled, Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Journal Articles

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, Huili Grace Xing

Appl. Phys. Lett. 107, 243501 (2015)

https://doi.org/10.1063/1.4937436

Published: December 2015

View articletitled, Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Journal Articles

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Toshiki Kanaki, Hirokatsu Asahara, Shinobu Ohya, Masaaki Tanaka

Appl. Phys. Lett. 107, 242401 (2015)

https://doi.org/10.1063/1.4937437

Published: December 2015

View articletitled, Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Journal Articles

Analysis of charge transfer and recombination for the poly(3-hexylthiophene):[6,6]-phenyl C₆₁ butyric acid methyl ester organic solar cells with iron oxide nanoparticles in various layers

Eung-Kyu Park, Ji-Hwan Kim, Hyeong Jun Cho, Dong-Hoon Lee, Yong-Sang Kim

Appl. Phys. Lett. 107, 153903 (2015)

https://doi.org/10.1063/1.4933270

Published: October 2015

View articletitled, Analysis of charge transfer and recombination for the poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester organic solar cells with iron oxide nanoparticles in various layers

Includes: Supplementary data

Journal Articles

The interfacial layer effect on bi-stable resistive switching phenomenon in MnO_x thin film

Min Kyu Yang, Gun Hwan Kim, Hyunsu Ju, Jeon-Kook Lee, Han-Cheol Ryu

Appl. Phys. Lett. 107, 053503 (2015)

https://doi.org/10.1063/1.4928249

Published: August 2015

View articletitled, The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film

Journal Articles

Equivalent circuit analysis of radiative coupling in monolithic tandem solar cells

Dongchen Lan, Martin A. Green

Appl. Phys. Lett. 106, 263902 (2015)

https://doi.org/10.1063/1.4923209

Published: June 2015

View articletitled, Equivalent circuit analysis of radiative coupling in monolithic tandem solar cells

Journal Articles

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, Kei May Lau

Appl. Phys. Lett. 106, 181110 (2015)

https://doi.org/10.1063/1.4921049

Published: May 2015

View articletitled, Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Journal Articles

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Byung-Jae Kim, Ya-Hsi Hwang, Shihyun Ahn, Weidi Zhu, Chen Dong, Liu Lu, Fan Ren, M. R. Holzworth, Kevin S. Jones, Stephen J. Pearton, David J. Smith, Jihyun Kim, Ming-Lan Zhang

Appl. Phys. Lett. 106, 153504 (2015)

https://doi.org/10.1063/1.4918530

Published: April 2015

View articletitled, Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Journal Articles

Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

Song-ang Peng, Zhi Jin, Peng-Ma, Da-yong Zhang, Jing-yuan Shi, Xuan-yun Wang, Shao-qing Wang, Mei-Li, Xin-yu Liu, Guang-hui Yu

Appl. Phys. Lett. 106, 033503 (2015)

https://doi.org/10.1063/1.4906350

Published: January 2015

View articletitled, Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

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Experimental study of the nonlinear distortion of non-reciprocal transmission in nonlinear parity-time symmetric LC resonators

Preparation of degenerate n-type Al_xGa₁₋_xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures

Probing material conductivity in two-terminal devices by resistance difference

Resonant and resistive dual-mode uncooled infrared detectors toward expanded dynamic range and high linearity

Front surface field formation for majority carriers by functional p-NiO layer employed Si solar cell

Electrically tunable metasurface absorber based on dissipating behavior of embedded varactors

Accurate expressions for solar cell fill factors including series and shunt resistances

Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Analysis of charge transfer and recombination for the poly(3-hexylthiophene):[6,6]-phenyl C₆₁ butyric acid methyl ester organic solar cells with iron oxide nanoparticles in various layers

The interfacial layer effect on bi-stable resistive switching phenomenon in MnO_x thin film

Equivalent circuit analysis of radiative coupling in monolithic tandem solar cells

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

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