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Journal Articles

Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Junyeong Choi, Geun-Hee Lee, Jiseok Yang, Jaimin Kang, Byong-Guk Park, Albert Min Gyu Park, Kab-Jin Kim

Appl. Phys. Lett. 125, 192403 (2024)

https://doi.org/10.1063/5.0227569

Published: November 2024

View article titled, Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Journal Articles

Investigation on self-rectifying properties of Pt/HfO₂/Ti with rivet-like structure based on ALD conformal technology

Kexiang Wang, Jie Lu, Zeyang Xiang, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang

Appl. Phys. Lett. 124, 203503 (2024)

https://doi.org/10.1063/5.0212383

Published: May 2024

View article titled, Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

Journal Articles

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Mingyan Wang, Heng Zhou, Chao Liu, Zhaojun Lin, Yuping Zeng, Peng Cui

Appl. Phys. Lett. 124, 152101 (2024)

https://doi.org/10.1063/5.0196746

Published: April 2024

View article titled, Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Journal Articles

Atomic layer self-transducing MoS₂ vibrating channel transistors with 0.5 pm/Hz^1/2 displacement sensitivity at room temperature

S M Enamul Hoque Yousuf, Philip X.-L. Feng

Appl. Phys. Lett. 124, 053503 (2024)

https://doi.org/10.1063/5.0170127

Published: January 2024

View article titled, Atomic layer self-transducing MoS2 vibrating channel transistors with 0.5 pm/Hz1/2 displacement sensitivity at room temperature

Includes: Supplementary data

Journal Articles

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Eoin G. Kelly, Alexei Orekhov, Nico W. Hendrickx, Matthias Mergenthaler, Felix J. Schupp, Stephan Paredes, Rafael S. Eggli, Andreas V. Kuhlmann, Patrick Harvey-Collard, Andreas Fuhrer, Gian Salis

Appl. Phys. Lett. 123, 262104 (2023)

https://doi.org/10.1063/5.0177857

Published: December 2023

View article titled, Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Includes: Supplementary data

Journal Articles

Experimental evidence of nonreciprocal propagation in space-time modulated piezoelectric phononic crystals

S. Tessier Brothelande, C. Croënne, F. Allein, J. O. Vasseur, M. Amberg, F. Giraud, B. Dubus

Appl. Phys. Lett. 123, 201701 (2023)

https://doi.org/10.1063/5.0169265

Published: November 2023

View article titled, Experimental evidence of nonreciprocal propagation in space-time modulated piezoelectric phononic crystals

Includes: Supplementary data

Journal Articles

High-speed InAlAs digital alloy avalanche photodiode

Wenyang Wang, Jinshan Yao, Linze Li, Huachen Ge, Luyu Wang, Liqi Zhu, Qiushi Chen, Hong Lu, Baile Chen

Appl. Phys. Lett. 123, 191102 (2023)

https://doi.org/10.1063/5.0169935

Published: November 2023

View article titled, High-speed InAlAs digital alloy avalanche photodiode

Journal Articles

Flexible integration of gigahertz nanomechanical resonators with a superconducting microwave resonator using a bonded flip-chip method

Sultan Malik, Wentao Jiang, Felix M. Mayor, Takuma Makihara, Amir H. Safavi-Naeini

Appl. Phys. Lett. 123, 104001 (2023)

https://doi.org/10.1063/5.0157516

Published: September 2023

View article titled, Flexible integration of gigahertz nanomechanical resonators with a superconducting microwave resonator using a bonded flip-chip method

Includes: Supplementary data

Journal Articles

Iontronic capacitance-enhanced LC wireless passive pressure sensor for high-performance flexible sensing

Ke Liu, Yuxin Qin, Guirong Wu, Daren Wang, Haiyan Zhang, Weidong Wang, Yangbo Yuan, Libo Gao

Appl. Phys. Lett. 123, 083501 (2023)

https://doi.org/10.1063/5.0157434

Published: August 2023

View article titled, Iontronic capacitance-enhanced LC wireless passive pressure sensor for high-performance flexible sensing

Includes: Supplementary data

Journal Articles

High transconductance and current density in field effect transistors using arrays of bundled semiconducting carbon nanotubes

Sean M. Foradori, Jonathan H. Dwyer, Anjali Suresh, Padma Gopalan, Michael S. Arnold

Appl. Phys. Lett. 121, 073504 (2022)

https://doi.org/10.1063/5.0093859

Published: August 2022

View article titled, High transconductance and current density in field effect transistors using arrays of bundled semiconducting carbon nanotubes

Includes: Supplementary data

Journal Articles

Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

Young Tea Chun, Jiyoul Lee, Daping Chu

Appl. Phys. Lett. 119, 203102 (2021)

https://doi.org/10.1063/5.0066577

Published: November 2021

View article titled, Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

Includes: Supplementary data

Journal Articles

Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Qiaoling Tian, Xiaoning Zhao, Xiaohan Zhang, Huai Lin, Di Wang, Guozhong Xing, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu

Appl. Phys. Lett. 119, 143505 (2021)

https://doi.org/10.1063/5.0065658

Published: October 2021

View article titled, Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Includes: Supplementary data

Journal Articles

Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi

Appl. Phys. Lett. 119, 103501 (2021)

https://doi.org/10.1063/5.0057182

Published: September 2021

View article titled, Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

Journal Articles

Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi

Appl. Phys. Lett. 119, 071601 (2021)

https://doi.org/10.1063/5.0060415

Published: August 2021

View article titled, Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Journal Articles

Electromechanical coupling and motion transduction in β -Ga₂O₃ vibrating channel transistors

Xu-Qian Zheng, Tahmid Kaisar, Philip X.-L. Feng

Appl. Phys. Lett. 117, 243504 (2020)

https://doi.org/10.1063/5.0031503

Published: December 2020

View article titled, Electromechanical coupling and motion transduction in β -Ga2O3 vibrating channel transistors

Includes: Supplementary data

Journal Articles

Quality factor tuning of micromechanical resonators via electrical dissipation

Nicholas E. Bousse, James M. L. Miller, Hyun-Keun Kwon, Gabrielle D. Vukasin, Thomas W. Kenny

Appl. Phys. Lett. 116, 023506 (2020)

https://doi.org/10.1063/1.5125286

Published: January 2020

View article titled, Quality factor tuning of micromechanical resonators via electrical dissipation

Includes: Supplementary data

Journal Articles

MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Karsten Rojek, Roland Schmechel, Niels Benson

Appl. Phys. Lett. 114, 152104 (2019)

https://doi.org/10.1063/1.5090947

Published: April 2019

View article titled, MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Includes: Supplementary data

Journal Articles

Inverted scanning microwave microscope for in vitro imaging and characterization of biological cells

Marco Farina, Xin Jin, Gianluca Fabi, Eleonora Pavoni, Andrea di Donato, Davide Mencarelli, Antonio Morini, Francesco Piacenza, Richard Al Hadi, Yan Zhao, Yaqing Ning, Tiziana Pietrangelo, Xuanhong Cheng, James C. M. Hwang

Appl. Phys. Lett. 114, 093703 (2019)

https://doi.org/10.1063/1.5086259

Published: March 2019

View article titled, Inverted scanning microwave microscope for in vitro imaging and characterization of biological cells

Includes: Supplementary data

Journal Articles

Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

Mao-Chou Tai, Ting-Chang Chang, Ming-Chen Chen, Hsiao-Cheng Chiang, Yu-Ching Tsao, Yu-Chieh Chien, Yu-Xuan Wang, Yu-Lin Tsai, Jian-Jie Chen, Shengdong Zhang, Hsi-Ming Chang

Appl. Phys. Lett. 113, 173501 (2018)

https://doi.org/10.1063/1.5042617

Published: October 2018

View article titled, Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

Journal Articles

Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Fazel Zare Bidoky, Woo Jin Hyun, Donghoon Song, C. Daniel Frisbie

Appl. Phys. Lett. 113, 053301 (2018)

https://doi.org/10.1063/1.5025475

Published: July 2018

View article titled, Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Includes: Supplementary data

NARROW

Topics

Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Investigation on self-rectifying properties of Pt/HfO₂/Ti with rivet-like structure based on ALD conformal technology

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Atomic layer self-transducing MoS₂ vibrating channel transistors with 0.5 pm/Hz^1/2 displacement sensitivity at room temperature

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Experimental evidence of nonreciprocal propagation in space-time modulated piezoelectric phononic crystals

High-speed InAlAs digital alloy avalanche photodiode

Flexible integration of gigahertz nanomechanical resonators with a superconducting microwave resonator using a bonded flip-chip method

Iontronic capacitance-enhanced LC wireless passive pressure sensor for high-performance flexible sensing

High transconductance and current density in field effect transistors using arrays of bundled semiconducting carbon nanotubes

Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Electromechanical coupling and motion transduction in β -Ga₂O₃ vibrating channel transistors

Quality factor tuning of micromechanical resonators via electrical dissipation

MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Inverted scanning microwave microscope for in vitro imaging and characterization of biological cells

Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

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