1-20 of 229
Power electronics
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Enhancement of high-temperature capacitive energy storage performance in all-polymer dielectric composites via microphase separation

FeaturedScilightAvailable to Purchase
Jinbao Chen, Ting Li, Ziyu Lv, Yongbiao Zhai, Wugang Liao, Qiyan Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 012903 (2025)
https://doi.org/10.1063/5.0280505
Published: July 2025
View articletitled, Enhancement of high-temperature capacitive energy storage performance in all-polymer dielectric composites via microphase separation
Open the PDF for Enhancement of high-temperature capacitive energy storage performance in all-polymer dielectric composites via microphase separation in another window
Journal Articles

A robust and flexible wearable hydrogel thermocell driven by body heat fabricated by a one-step process at room temperature

Available to Purchase
Siwen Liu, Jingchang Sun, Zijiang Yang, Yingnan Quan, Furong Cao, Huiying Cheng, Hui Liang, Liuting Shan, Qiuju Feng, Jiming Bian, Junfeng Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 263903 (2025)
https://doi.org/10.1063/5.0275858
Published: June 2025
View articletitled, A robust and flexible wearable hydrogel thermocell driven by body heat fabricated by a one-step process at room temperature
Open the PDF for A robust and flexible wearable hydrogel thermocell driven by body heat fabricated by a one-step process at room temperature in another window
Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

Available to Purchase
Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View articletitled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
Open the PDF for 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study in another window
Journal Articles

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

Available to Purchase
Hao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 163503 (2025)
https://doi.org/10.1063/5.0253093
Published: April 2025
View articletitled, 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Open the PDF for 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect in another window
Journal Articles

Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes

FeaturedOpen Access
Sai Charan Vanjari, Aditya K. Bhat, Haiqi Huang, Matthew D. Smith, James W. Pomeroy, Martin Kuball
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 163502 (2025)
https://doi.org/10.1063/5.0260734
Published: April 2025
View articletitled, Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes
Open the PDF for Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes in another window
Journal Articles

Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering

Available to Purchase
Jianshi Sun, Xiangjun Liu, Yucheng Xiong, Yuhang Yao, Xiaolong Yang, Cheng Shao, Renzong Wang, Shouhang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112112 (2025)
https://doi.org/10.1063/5.0256246
Published: March 2025
View articletitled, Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering
Open the PDF for Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering in another window
Journal Articles

Photoplastic anisotropy in nanoindentation of wurtzite ZnO single crystals

FeaturedScilightOpen Access
Hiroto Oguri, Yan Li, Xufei Fang, Atsutomo Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 114101 (2025)
https://doi.org/10.1063/5.0248543
Published: March 2025
View articletitled, Photoplastic anisotropy in nanoindentation of wurtzite ZnO single crystals
Open the PDF for Photoplastic anisotropy in nanoindentation of wurtzite ZnO single crystals in another window
Journal Articles

Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage

Available to Purchase
Prachi Pohekar, Bhanu B. Upadhyay, Bazila Parvez, Swaroop Ganguly, Dipankar Saha
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112103 (2025)
https://doi.org/10.1063/5.0243137
Published: March 2025
View articletitled, Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage
Open the PDF for Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage in another window
Journal Articles

High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits

Available to Purchase
Dongbeom Goo, Ganghyeok Seo, Hongsik Lim, Uiyeon Won, Jongseok Lee, Taehyeok Jin, Kyunghwan Sung, Taehun Lee, Jinkyu Kim, Seok Lee, Jaehyun Cho, Kenji Watanabe, Takashi Taniguchi, Sungjae Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083507 (2025)
https://doi.org/10.1063/5.0250755
Published: February 2025
View articletitled, High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits
Open the PDF for High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits in another window
Journal Articles

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

Open Access
Kornelius Tetzner, Andreas Thies, Enrico Brusaterra, Alexander Külberg, Pallabi Paul, Ina Ostermay, Joachim Würfl, Oliver Hilt
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062105 (2025)
https://doi.org/10.1063/5.0253992
Published: February 2025
View articletitled, All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates
Open the PDF for All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates in another window
Journal Articles

Monolithic on-chip integration of micro-thin film thermocouples on multifinger gallium oxide MOSFETs

Open Access
Hassan Irshad Bhatti, Ganesh Mainali, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043511 (2025)
https://doi.org/10.1063/5.0250985
Published: January 2025
View articletitled, Monolithic on-chip integration of micro-thin film thermocouples on multifinger gallium oxide MOSFETs
Open the PDF for Monolithic on-chip integration of micro-thin film thermocouples on multifinger gallium oxide MOSFETs in another window
Journal Articles

E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

Available to Purchase
Jiangnan Liu, Ding Wang, Md Tanvir Hasan, Shubham Mondal, Jason Manassa, Jeremy M. Shen, Danhao Wang, Md Mehedi Hasan Tanim, Samuel Yang, Robert Hovden, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013509 (2025)
https://doi.org/10.1063/5.0217732
Published: January 2025
View articletitled, E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
Open the PDF for E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks in another window
Journal Articles

Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures

FeaturedAvailable to Purchase
Xiaozhuang Lu, Qingbin Liu, Cui Yu, Shiwei Feng, Zhihong Feng, Haibing Li, Shijie Pan, Zezhao He, Xuan Li, Chuangjie Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011604 (2025)
https://doi.org/10.1063/5.0236087
Published: January 2025
View articletitled, Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures
Open the PDF for Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures in another window
Journal Articles

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

Available to Purchase
Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
https://doi.org/10.1063/5.0245289
Published: January 2025
View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
Open the PDF for Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing in another window
Journal Articles

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

Available to Purchase
Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012110 (2025)
https://doi.org/10.1063/5.0232630
Published: January 2025
View articletitled, Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
Open the PDF for Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment in another window
Journal Articles

Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs

Editor’s PickAvailable to Purchase
Haiwen Xu, Jishen Zhang, Xiao Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013505 (2025)
https://doi.org/10.1063/5.0237715
Published: January 2025
View articletitled, Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs
Open the PDF for Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs in another window
Journal Articles

Reliability of NiO/β-Ga2O3 bipolar heterojunction

Available to Purchase
Hehe Gong, Xin Yang, Matthew Porter, Zineng Yang, Bixuan Wang, Li Li, Lan Fu, Kohei Sasaki, Han Wang, Shulin Gu, Rong Zhang, Jiandong Ye, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012102 (2025)
https://doi.org/10.1063/5.0243015
Published: January 2025
View articletitled, Reliability of NiO/β-Ga2O3 bipolar heterojunction
Open the PDF for Reliability of NiO/β-Ga2O3 bipolar heterojunction in another window
Journal Articles

Monolithic β-Ga2O3 bidirectional dual-gate MOSFET

Available to Purchase
Pooja Sharma, Poulomi Chakrabarty, Prabhat Prajapati, Sera Sen, Saurabh Lodha
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253502 (2024)
https://doi.org/10.1063/5.0232679
Published: December 2024
View articletitled, Monolithic β-Ga2O3 bidirectional dual-gate MOSFET
Open the PDF for Monolithic β-Ga2O3 bidirectional dual-gate MOSFET in another window
Journal Articles

Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment

Available to Purchase
Daimotsu Kato, Yosuke Kajiwara, Hiroshi Ono, Aya Shindome, Po-Chin Huang, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242108 (2024)
https://doi.org/10.1063/5.0219785
Published: December 2024
View articletitled, Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment
Open the PDF for Improvement of recessed MOS gate characteristics in normally-off AlN/GaN MOS-HFETs with N 2 / NH 3 thermal treatment in another window
Journal Articles

24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition

Available to Purchase
Takeru Wakamatsu, Yuki Isobe, Hitoshi Takane, Kentaro Kaneko, Katsuhisa Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 212106 (2024)
https://doi.org/10.1063/5.0231630
Published: November 2024
View articletitled, 24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition
Open the PDF for 24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition in another window