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Journal Articles
Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling
Rohith Soman, Mohamadali Malakoutian, Kelly Woo, Jeong-Kyu Kim, Thomas Andres Rodriguez, Rafael Perez Martinez, Matthew DeJarld, Maher Tahhan, Jarrod Valliancourt, Eduardo M. Chumbes, Jeffrey Laroche, Srabanti Chowdhury
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 213503 (2025)
Published: May 2025
Journal Articles
Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction
Available to PurchaseHuaize Liu, Yanghu Peng, Hui Guo, Na Sun, Ruiling Gong, Guang Qiao, Pengfei Shao, Jiandong Ye, Rong Zhang, Dunjun Chen
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 162102 (2025)
Published: April 2025
Journal Articles
Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 112103 (2025)
Published: March 2025
Journal Articles
Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer
Available to PurchaseXiao-Na Zhu, Lei Shen, Yu-Chun Li, Yu-Dong Lv, Cai-Yu Shi, Teng Huang, Zi-Ying Huang, David Wei Zhang, Hong-Liang Lu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 083506 (2025)
Published: February 2025
Journal Articles
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
Available to PurchaseJiangnan Liu, Ding Wang, Md Tanvir Hasan, Shubham Mondal, Jason Manassa, Jeremy M. Shen, Danhao Wang, Md Mehedi Hasan Tanim, Samuel Yang, Robert Hovden, Zetian Mi
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 013509 (2025)
Published: January 2025
Journal Articles
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
Published: December 2024
Journal Articles
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 203504 (2024)
Published: November 2024
Journal Articles
Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 192101 (2024)
Published: November 2024
Journal Articles
Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
Available to PurchaseKangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
Published: October 2024
Journal Articles
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
Available to PurchaseJunyan Zhu, Jihong Ding, Keqing OuYang, Xinbo Zou, Hongping Ma, Liang Li, Debin Zhang, Jianjun Zhou, Yiwu Qiu, Xinjie Zhou, Tao Wang, Wei Huang, David Wei Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 132103 (2024)
Published: September 2024
Journal Articles
Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 102104 (2024)
Published: September 2024
Journal Articles
Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 043501 (2024)
Published: July 2024
Journal Articles
Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
Available to PurchaseHiroko Iguchi, Tetsuo Narita, Kenji Ito, Shiro Iwasaki, Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Daigo Kikuta
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 022104 (2024)
Published: July 2024
Journal Articles
Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
Available to PurchaseXinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 173501 (2024)
Published: April 2024
Journal Articles
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
Available to PurchaseYuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 133504 (2024)
Published: March 2024
Journal Articles
Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 103504 (2024)
Published: March 2024
Journal Articles
Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures
Available to PurchaseSiqing Zhang, Zheng-Dong Luo, Xuetao Gan, Dawei Zhang, Qiyu Yang, Dongxin Tan, Jie Wen, Yan Liu, Genquan Han, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 093104 (2024)
Published: February 2024
Includes: Supplementary data
Journal Articles
Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 052108 (2024)
Published: February 2024
Includes: Supplementary data
Journal Articles
Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses
Open Access
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 213503 (2023)
Published: November 2023
Journal Articles
Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2
Available to PurchaseSeunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi, Zirun Han, Gwangwoo Kim, Kyung Yeol Ma, Hyeon Suk Shin, Roy H. Olsson, III, Deep Jariwala
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 183501 (2023)
Published: October 2023
Includes: Supplementary data
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