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Journal Articles

Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs

Chen Hua (陈华), Zhang Yanjun (张彦军), He Liang (何亮)

Appl. Phys. Lett. 122, 222107 (2023)

https://doi.org/10.1063/5.0147563

Published: June 2023

View article titled, Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs

Journal Articles

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Yu-Chun Li, Xiao-Xi Li, Teng Huang, Ze-Yu Gu, Qiu-Jun Yu, Yin-Chi Liu, David Wei Zhang, Xiao-Na Zhu, Hong-Liang Lu

Appl. Phys. Lett. 122, 172902 (2023)

https://doi.org/10.1063/5.0138158

Published: April 2023

View article titled, Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer

Includes: Supplementary data

Journal Articles

Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Mengchao Li, Qixin Zhuang, Shirong Lu, Zhigang Zang, Wensi Cai

Appl. Phys. Lett. 122, 162104 (2023)

https://doi.org/10.1063/5.0147857

Published: April 2023

View article titled, Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Includes: Supplementary data

Journal Articles

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi

Appl. Phys. Lett. 122, 090601 (2023)

https://doi.org/10.1063/5.0143645

Published: March 2023

View article titled, Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Journal Articles

High I_on/I_off ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO₂/SiN_x/Al₂O₃ gate stacks

Junzhe Kang, Kai Xu, Hanwool Lee, Souvik Bhattacharya, Zijing Zhao, Zhiyu Wang, R. Mohan Sankaran, Wenjuan Zhu

Appl. Phys. Lett. 122, 082906 (2023)

https://doi.org/10.1063/5.0134729

Published: February 2023

View article titled, High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks

Includes: Supplementary data

Journal Articles

Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO₂ gate stack scaling down

Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Lee, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu, Min-Hung Lee

Appl. Phys. Lett. 121, 252902 (2022)

https://doi.org/10.1063/5.0111592

Published: December 2022

View article titled, Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down

Journal Articles

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Appl. Phys. Lett. 121, 233506 (2022)

https://doi.org/10.1063/5.0122097

Published: December 2022

View article titled, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Includes: Supplementary data

Journal Articles

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yanjie Li, Yamin Zhang, Lixing Zhou, Meng Zhang

Appl. Phys. Lett. 121, 153501 (2022)

https://doi.org/10.1063/5.0107459

Published: October 2022

View article titled, Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Journal Articles

Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Peng Wang, Yizhou Jiang, Yitian Gu, Menglin Huang, Wei Huang, Shiyou Chen, Zhiqiang Xiao, Xinbo Zou, Yiwu Qiu, Xinjie Zhou, Jianjun Zhou, David Wei Zhang

Appl. Phys. Lett. 121, 143501 (2022)

https://doi.org/10.1063/5.0094090

Published: October 2022

View article titled, Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Journal Articles

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli

Appl. Phys. Lett. 121, 053501 (2022)

https://doi.org/10.1063/5.0098052

Published: August 2022

View article titled, Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Journal Articles

Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications

Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee

Appl. Phys. Lett. 121, 042901 (2022)

https://doi.org/10.1063/5.0097795

Published: July 2022

View article titled, Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications

Journal Articles

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo

Appl. Phys. Lett. 120, 082104 (2022)

https://doi.org/10.1063/5.0084123

Published: February 2022

View article titled, Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Journal Articles

Electrical detection of T_V2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda

Appl. Phys. Lett. 120, 064001 (2022)

https://doi.org/10.1063/5.0078189

Published: February 2022

View article titled, Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Journal Articles

Fabrication and characterization of a self-aligned gate stack for electronics applications

Amy C. Brummer, Amar T. Mohabir, Daniel Aziz, Michael A. Filler, Eric M. Vogel

Appl. Phys. Lett. 119, 142901 (2021)

https://doi.org/10.1063/5.0062163

Published: October 2021

View article titled, Fabrication and characterization of a self-aligned gate stack for electronics applications

Includes: Supplementary data

Journal Articles

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Ruize Sun, Xinghuan Chen, Chao Liu, Wanjun Chen, Bo Zhang

Appl. Phys. Lett. 119, 133503 (2021)

https://doi.org/10.1063/5.0065046

Published: October 2021

View article titled, Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Journal Articles

Polarization switching in Hf_0.5Zr_0.5O₂-dielectric stack: The role of dielectric layer thickness

Atanu K. Saha, Mengwei Si, Peide D. Ye, Sumeet K. Gupta

Appl. Phys. Lett. 119, 122903 (2021)

https://doi.org/10.1063/5.0056448

Published: September 2021

View article titled, Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness

Includes: Supplementary data

Journal Articles

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

Chuljun Lee, Wooseok Choi, Myunghoon Kwak, Seyoung Kim, Hyunsang Hwang

Appl. Phys. Lett. 119, 103503 (2021)

https://doi.org/10.1063/5.0059804

Published: September 2021

View article titled, Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

Journal Articles

Metal (Pt)/ferroelectric (SrBi₂Ta₂O₉)/insulator (La₂O₃)/semiconductor (Si), MFIS structures for nonvolatile memory applications

Shivendra K. Rathaur, Robin Khosla, Satinder K. Sharma

Appl. Phys. Lett. 119, 063505 (2021)

https://doi.org/10.1063/5.0055792

Published: August 2021

View article titled, Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications

Journal Articles

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Xin Chen, Yaozong Zhong, Yu Zhou, Shuai Su, Shumeng Yan, Xiaolu Guo, Hongwei Gao, Xiaoning Zhan, Sihua Ouyang, Zihui Zhang, Wengang Bi, Qian Sun, Hui Yang

Appl. Phys. Lett. 119, 063501 (2021)

https://doi.org/10.1063/5.0055530

Published: August 2021

View article titled, Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Journal Articles

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

Li Zhang, Zheyang Zheng, Song Yang, Wenjie Song, Sirui Feng, Kevin J. Chen

Appl. Phys. Lett. 119, 053503 (2021)

https://doi.org/10.1063/5.0053252

Published: August 2021

View article titled, Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

NARROW

Topics

Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs

Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer

Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

High I_on/I_off ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO₂/SiN_x/Al₂O₃ gate stacks

Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO₂ gate stack scaling down

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Electrical detection of T_V2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Fabrication and characterization of a self-aligned gate stack for electronics applications

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Polarization switching in Hf_0.5Zr_0.5O₂-dielectric stack: The role of dielectric layer thickness

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

Metal (Pt)/ferroelectric (SrBi₂Ta₂O₉)/insulator (La₂O₃)/semiconductor (Si), MFIS structures for nonvolatile memory applications

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

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