Skip Nav Destination
Update search
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
NARROW
Format
Collections
Topics
Subjects
Journal
Article Type
Issue Section
Date
Availability
Journal Articles
Journal Articles
Yu-Chun Li, Xiao-Xi Li, Teng Huang, Ze-Yu Gu, Qiu-Jun Yu, Yin-Chi Liu, David Wei Zhang, Xiao-Na Zhu, Hong-Liang Lu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 172902 (2023)
Published: April 2023
Includes: Supplementary data
Journal Articles
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 162104 (2023)
Published: April 2023
Includes: Supplementary data
Journal Articles
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 090601 (2023)
Published: March 2023
Journal Articles
High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks
Junzhe Kang, Kai Xu, Hanwool Lee, Souvik Bhattacharya, Zijing Zhao, Zhiyu Wang, R. Mohan Sankaran, Wenjuan Zhu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 082906 (2023)
Published: February 2023
Includes: Supplementary data
Journal Articles
Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Lee, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu, Min-Hung Lee
Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 252902 (2022)
Published: December 2022
Journal Articles
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte
Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 233506 (2022)
Published: December 2022
Includes: Supplementary data
Journal Articles
Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yanjie Li, Yamin Zhang, Lixing Zhou, Meng Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 153501 (2022)
Published: October 2022
Journal Articles
Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation
Peng Wang, Yizhou Jiang, Yitian Gu, Menglin Huang, Wei Huang, Shiyou Chen, Zhiqiang Xiao, Xinbo Zou, Yiwu Qiu, Xinjie Zhou, Jianjun Zhou, David Wei Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 143501 (2022)
Published: October 2022
Journal Articles
Journal Articles
Journal Articles
Journal Articles
Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda
Journal:
Applied Physics Letters
Appl. Phys. Lett. 120, 064001 (2022)
Published: February 2022
Journal Articles
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 142901 (2021)
Published: October 2021
Includes: Supplementary data
Journal Articles
Journal Articles
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 122903 (2021)
Published: September 2021
Includes: Supplementary data
Journal Articles
Journal Articles
Journal Articles
Xin Chen, Yaozong Zhong, Yu Zhou, Shuai Su, Shumeng Yan, Xiaolu Guo, Hongwei Gao, Xiaoning Zhan, Sihua Ouyang, Zihui Zhang, Wengang Bi, Qian Sun, Hui Yang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 063501 (2021)
Published: August 2021
Journal Articles
Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 053503 (2021)
Published: August 2021
1