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Journal Articles

Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

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Rohith Soman, Mohamadali Malakoutian, Kelly Woo, Jeong-Kyu Kim, Thomas Andres Rodriguez, Rafael Perez Martinez, Matthew DeJarld, Maher Tahhan, Jarrod Valliancourt, Eduardo M. Chumbes, Jeffrey Laroche, Srabanti Chowdhury
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 213503 (2025)
https://doi.org/10.1063/5.0261673
Published: May 2025
View article titled, Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling
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Journal Articles

Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction

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Huaize Liu, Yanghu Peng, Hui Guo, Na Sun, Ruiling Gong, Guang Qiao, Pengfei Shao, Jiandong Ye, Rong Zhang, Dunjun Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162102 (2025)
https://doi.org/10.1063/5.0259821
Published: April 2025
View article titled, Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction
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Journal Articles

Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage

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Prachi Pohekar, Bhanu B. Upadhyay, Bazila Parvez, Swaroop Ganguly, Dipankar Saha
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112103 (2025)
https://doi.org/10.1063/5.0243137
Published: March 2025
View article titled, Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage
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Journal Articles

Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer

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Xiao-Na Zhu, Lei Shen, Yu-Chun Li, Yu-Dong Lv, Cai-Yu Shi, Teng Huang, Zi-Ying Huang, David Wei Zhang, Hong-Liang Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083506 (2025)
https://doi.org/10.1063/5.0252518
Published: February 2025
View article titled, Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer
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Journal Articles

E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

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Jiangnan Liu, Ding Wang, Md Tanvir Hasan, Shubham Mondal, Jason Manassa, Jeremy M. Shen, Danhao Wang, Md Mehedi Hasan Tanim, Samuel Yang, Robert Hovden, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013509 (2025)
https://doi.org/10.1063/5.0217732
Published: January 2025
View article titled, E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
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Journal Articles

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

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Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
https://doi.org/10.1063/5.0245907
Published: December 2024
View article titled, Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal Articles

Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs

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Hang Liao, Zheyang Zheng, Li Zhang, Tao Chen, Yan Cheng, Kevin J. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 203504 (2024)
https://doi.org/10.1063/5.0233528
Published: November 2024
View article titled, Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
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Journal Articles

Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack

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SeungYoon Oh, SiSung Yoon, Yoojin Lim, Gyuhyung Lee, Geonwook Yoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192101 (2024)
https://doi.org/10.1063/5.0232200
Published: November 2024
View article titled, Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack
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Journal Articles

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

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Kangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
https://doi.org/10.1063/5.0230096
Published: October 2024
View article titled, Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
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Journal Articles

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

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Junyan Zhu, Jihong Ding, Keqing OuYang, Xinbo Zou, Hongping Ma, Liang Li, Debin Zhang, Jianjun Zhou, Yiwu Qiu, Xinjie Zhou, Tao Wang, Wei Huang, David Wei Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 132103 (2024)
https://doi.org/10.1063/5.0222225
Published: September 2024
View article titled, Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
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Journal Articles

Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT

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Shivendra K. Rathaur, Abhisek Dixit, Edward Yi Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102104 (2024)
https://doi.org/10.1063/5.0211768
Published: September 2024
View article titled, Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT
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Journal Articles

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

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Wenqi Zhang, Min-Yen Yeh, Guan-Yu Lai, Bo-Rong Huang, Yi-Lin Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 043501 (2024)
https://doi.org/10.1063/5.0208368
Published: July 2024
View article titled, Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment
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Journal Articles

Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

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Hiroko Iguchi, Tetsuo Narita, Kenji Ito, Shiro Iwasaki, Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Daigo Kikuta
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 022104 (2024)
https://doi.org/10.1063/5.0214698
Published: July 2024
View article titled, Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor
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Journal Articles

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

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Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173501 (2024)
https://doi.org/10.1063/5.0196130
Published: April 2024
View article titled, Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
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Journal Articles

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

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Yuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133504 (2024)
https://doi.org/10.1063/5.0196442
Published: March 2024
View article titled, Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
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Journal Articles

Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

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Tetsuo Narita, Kenji Ito, Hiroko Iguchi, Shiro Iwasaki, Kazuyoshi Tomita, Daigo Kikuta
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 103504 (2024)
https://doi.org/10.1063/5.0191066
Published: March 2024
View article titled, Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method
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Journal Articles

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

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Siqing Zhang, Zheng-Dong Luo, Xuetao Gan, Dawei Zhang, Qiyu Yang, Dongxin Tan, Jie Wen, Yan Liu, Genquan Han, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093104 (2024)
https://doi.org/10.1063/5.0181137
Published: February 2024
View article titled, Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures
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Includes: Supplementary data
Journal Articles

Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian

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Youssef Hirchaou, Benoît Sklénard, Wolfgang Goes, Philippe Blaise, François Triozon, Jing Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 052108 (2024)
https://doi.org/10.1063/5.0187779
Published: February 2024
View article titled, Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian
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Includes: Supplementary data
Journal Articles

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

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Or Levit, Emanuel Ber, Mor M. Dahan, Yair Keller, Eilam Yalon
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 213503 (2023)
https://doi.org/10.1063/5.0169127
Published: November 2023
View article titled, Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses
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Journal Articles

Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

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Seunguk Song, Kwan-Ho Kim, Srikrishna Chakravarthi, Zirun Han, Gwangwoo Kim, Kyung Yeol Ma, Hyeon Suk Shin, Roy H. Olsson, III, Deep Jariwala
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 183501 (2023)
https://doi.org/10.1063/5.0169689
Published: October 2023
View article titled, Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2
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Includes: Supplementary data