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Journal Articles

Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

Wen-Chia Wu, Kuan-Ning Huang, Chien-Ying Su, Chi-Chung Kei, Cheng Huang Kuo, Chao-Hsin Chien
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 183101 (2023)
https://doi.org/10.1063/5.0170017
Published: October 2023
View article titled, Wafer-scale MOCVD grown WS<sub>2</sub> with normally off transistor behavior and its general application on different amorphous substrates
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Journal Articles

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Junhee Lee, Lakshay Gautam, Manijeh Razeghi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 151902 (2023)
https://doi.org/10.1063/5.0170383
Published: October 2023
View article titled, High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlO<sub>x</sub> interlayer
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Journal Articles

Improvement of the electrical treeing resistance of polymers through the self-arrangement effect of the voltage stabilizer caused by dielectrophoresis under non-uniform electric field

Xiaoqian Zhu, Yuhang Li, Yuanxiang Zhou, Yunxiao Zhang, Xuanhao Liu, Ming Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 104101 (2023)
https://doi.org/10.1063/5.0166658
Published: September 2023
View article titled, Improvement of the electrical treeing resistance of polymers through the self-arrangement effect of the voltage stabilizer caused by dielectrophoresis under non-uniform electric field
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Journal Articles

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 102102 (2023)
https://doi.org/10.1063/5.0166745
Published: September 2023
View article titled, Control on the density and optical properties of color centers at SiO<sub>2</sub>/SiC interfaces by oxidation and annealing
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Includes: Supplementary data
Journal Articles

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Donguk Kim, Tae Jun Yang, Woo Sik Choi, Hee Jun Lee, Jun Tae Jang, Eunryeong Hong, Woo Young Yang, Minwoo Choi, Ki Yeon Yang, Chang Seung Lee, Jiyong Woo, Dae Hwan Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 072102 (2023)
https://doi.org/10.1063/5.0153403
Published: August 2023
View article titled, Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states
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Journal Articles

Lateral nanoscale field emission comb for frequency mixing

L. B. De Rose, W. M. Jones, A. Scherer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013505 (2023)
https://doi.org/10.1063/5.0150034
Published: July 2023
View article titled, Lateral nanoscale field emission comb for frequency mixing
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Journal Articles

Nb/a-Si/Nb Josephson junctions for high-density superconducting circuits

David I. Olaya, John Biesecker, Manuel A. Castellanos-Beltran, Adam J. Sirois, Peter F. Hopkins, Paul D. Dresselhaus, Samuel P. Benz
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 182601 (2023)
https://doi.org/10.1063/5.0148250
Published: May 2023
View article titled, Nb/<em>a</em>-Si/Nb Josephson junctions for high-density superconducting circuits
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Journal Articles

Utilizing time domain electrical methods to monitor MLCCs' degradation

Pedram Yousefian, Shalini Rajpoot, Clive A. Randall
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 112902 (2023)
https://doi.org/10.1063/5.0138806
Published: March 2023
View article titled, Utilizing time domain electrical methods to monitor MLCCs' degradation
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Journal Articles

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Zheming Wang, Guohao Yu, Xu Yuan, Xuguang Deng, Li Zhang, Shige Dai, Guang Yang, Liguo Zhang, Rongkun Ji, Xiang Kan, Xuan Zhang, Houqiang Fu, Zhongming Zeng, Roy K.-Y. Wong, Yong Cai, Baoshun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062105 (2023)
https://doi.org/10.1063/5.0135550
Published: February 2023
View article titled, Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature
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Journal Articles

Low-temperature crystallization of indium oxide thin films with a photoactivable additive

Jun-Gyu Choi, Won-June Lee, Yong-Ryun Jo, Hyeonjun Na, Sangwoo Lee, Bong-Joong Kim, Myung-Han Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243301 (2022)
https://doi.org/10.1063/5.0127480
Published: December 2022
View article titled, Low-temperature crystallization of indium oxide thin films with a photoactivable additive
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Includes: Supplementary data
Journal Articles

Heat generation in PZT MEMS actuator arrays

Charalampos Fragkiadakis, Subramanian Sivaramakrishnan, Thorsten Schmitz-Kempen, Peter Mardilovich, Susan Trolier-McKinstry
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 162906 (2022)
https://doi.org/10.1063/5.0114670
Published: October 2022
View article titled, Heat generation in PZT MEMS actuator arrays
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Journal Articles

Improvement of weight stability in Li-ion-based electrolyte-gated transistor synapse by silica protective process

Han Xu, Jikai Lu, Yue Li, Renrui Fang, Woyu Zhang, Xiaoxin Xu, Yan Wang, Qi Liu, Dashan Shang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 113505 (2022)
https://doi.org/10.1063/5.0107556
Published: September 2022
View article titled, Improvement of weight stability in Li-ion-based electrolyte-gated transistor synapse by silica protective process
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Journal Articles

Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure

Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 081904 (2022)
https://doi.org/10.1063/5.0101255
Published: August 2022
View article titled, Electrical characterization and extraction of activation energies of the defect states in the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructure
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Includes: Supplementary data
Journal Articles

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

J. Cañas, C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez, E. Gheeraert
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072101 (2022)
https://doi.org/10.1063/5.0103037
Published: August 2022
View article titled, High quality SiO<sub>2</sub>/diamond interface in O-terminated p-type diamond MOS capacitors
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Journal Articles

As-deposited ferroelectric HZO on a III–V semiconductor

André Andersen, Anton E. O. Persson, Lars-Erik Wernersson
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 012901 (2022)
https://doi.org/10.1063/5.0097462
Published: July 2022
View article titled, As-deposited ferroelectric HZO on a III–V semiconductor
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Includes: Supplementary data
Journal Articles

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Zheyang Zheng, Tao Chen, Li Zhang, Wenjie Song, Kevin J. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 152102 (2022)
https://doi.org/10.1063/5.0086954
Published: April 2022
View article titled, Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform
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Journal Articles

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Kornelius Tetzner, Kingsley Egbo, Michael Klupsch, Ralph-Stephan Unger, Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Achim Trampert, Oliver Bierwagen, Joachim Würfl
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 112110 (2022)
https://doi.org/10.1063/5.0083032
Published: March 2022
View article titled, SnO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction field-effect transistors and vertical p–n diodes
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Includes: Supplementary data
Journal Articles

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Pegah Bagheri, Andrew Klump, Shun Washiyama, M. Hayden Breckenridge, Ji Hyun Kim, Yan Guan, Dolar Khachariya, Cristyan Quiñones-García, Biplab Sarkar, Shashwat Rathkanthiwar, Pramod Reddy, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082102 (2022)
https://doi.org/10.1063/5.0082992
Published: February 2022
View article titled, Doping and compensation in heavily Mg doped Al-rich AlGaN films
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Journal Articles

Ballistic-like space-charge-limited currents in halide perovskites at room temperature

Osbel Almora, Daniel Miravet, Marisé García-Batlle, Germà Garcia-Belmonte
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 242107 (2021)
https://doi.org/10.1063/5.0076239
Published: December 2021
View article titled, Ballistic-like space-charge-limited currents in halide perovskites at room temperature
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Includes: Supplementary data
Journal Articles

Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers

Srinivas Gandrothula, Takeshi Kamikawa, Pavel Shapturenka, Ryan Anderson, Matthew Wong, Haojun Zhang, James S. Speck, Shuji Nakamura, Steven P. Denbaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 142103 (2021)
https://doi.org/10.1063/5.0062032
Published: October 2021
View article titled, Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers
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