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Journal Articles

Effects of residual oxygen on superconducting niobium films

Miguel Manzo-Perez, Moeid Jamalzadeh, Zhujun Huang, Xiao Tong, Kim Kisslinger, Dmytro Nykypanchuk, Davood Shahrjerdi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112602 (2024)
https://doi.org/10.1063/5.0225589
Published: September 2024
View article titled, Effects of residual oxygen on superconducting niobium films
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Journal Articles

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Pieter Cardinael, Sachin Yadav, Herwig Hahn, Ming Zhao, Sourish Banerjee, Babak Kazemi Esfeh, Christof Mauder, Barry O'Sullivan, Uthayasankaran Peralagu, Anurag Vohra, Robert Langer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 072103 (2024)
https://doi.org/10.1063/5.0212145
Published: August 2024
View article titled, AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
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Journal Articles

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

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Rohan Sengupta, Brian Little, Seiji Mita, Keith Markham, J. Houston Dycus, Shane Stein, Barry Wu, Zlatko Sitar, Fred Kish, Spyridon Pavlidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062102 (2024)
https://doi.org/10.1063/5.0194526
Published: August 2024
View article titled, Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p–n diodes with near-unity ideality factor
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Journal Articles

Influence of heat transfer at the graphene–polyimide interface on laser-induced graphene formation

Won Gyun Park, Jeong-Hyeon Park, Sang-Chan Park, Kiwan Kim, Eun-Ho Lee, Jae-Hyuk Ahn
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 034106 (2024)
https://doi.org/10.1063/5.0207413
Published: July 2024
View article titled, Influence of heat transfer at the graphene–polyimide interface on laser-induced graphene formation
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Journal Articles

First-principles study of defects and doping limits in CaO

Zhenkun Yuan, Geoffroy Hautier
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 232101 (2024)
https://doi.org/10.1063/5.0211707
Published: June 2024
View article titled, First-principles study of defects and doping limits in CaO
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Journal Articles

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi, Zane Jamal-Eddine, Brendan Gunning, Andrew Armstrong, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 221106 (2024)
https://doi.org/10.1063/5.0213300
Published: May 2024
View article titled, Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
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Journal Articles

Multi-harmonic phononic frequency comb generation in capacitive CMOS-MEMS resonators

Kalyani S. Bhosale, Sheng-Shian Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 163505 (2024)
https://doi.org/10.1063/5.0197773
Published: April 2024
View article titled, Multi-harmonic phononic frequency comb generation in capacitive CMOS-MEMS resonators
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Includes: Supplementary data
Journal Articles

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

B. A. Klein, A. A. Allerman, A. M. Armstrong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 103506 (2024)
https://doi.org/10.1063/5.0185336
Published: March 2024
View article titled, Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
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Journal Articles

A tunable high-Q flexible ferroelectric film capacitor for GHz RF applications

Feilong Mao, Yongqi Hou, Yifan Zhu, Haohan Zeng, Hui Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 263505 (2023)
https://doi.org/10.1063/5.0173884
Published: December 2023
View article titled, A tunable high-Q flexible ferroelectric film capacitor for GHz RF applications
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Includes: Supplementary data
Journal Articles

Growth and characterization of sputter-deposited Ga2O3-based memristive devices

Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 213504 (2023)
https://doi.org/10.1063/5.0170354
Published: November 2023
View article titled, Growth and characterization of sputter-deposited Ga<sub>2</sub>O<sub>3</sub>-based memristive devices
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Includes: Supplementary data
Journal Articles

Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses

Or Levit, Emanuel Ber, Mor M. Dahan, Yair Keller, Eilam Yalon
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 213503 (2023)
https://doi.org/10.1063/5.0169127
Published: November 2023
View article titled, Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses
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Journal Articles

Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

Wen-Chia Wu, Kuan-Ning Huang, Chien-Ying Su, Chi-Chung Kei, Cheng Huang Kuo, Chao-Hsin Chien
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 183101 (2023)
https://doi.org/10.1063/5.0170017
Published: October 2023
View article titled, Wafer-scale MOCVD grown WS<sub>2</sub> with normally off transistor behavior and its general application on different amorphous substrates
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Journal Articles

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Junhee Lee, Lakshay Gautam, Manijeh Razeghi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 151902 (2023)
https://doi.org/10.1063/5.0170383
Published: October 2023
View article titled, High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlO<sub>x</sub> interlayer
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Journal Articles

Improvement of the electrical treeing resistance of polymers through the self-arrangement effect of the voltage stabilizer caused by dielectrophoresis under non-uniform electric field

Xiaoqian Zhu, Yuhang Li, Yuanxiang Zhou, Yunxiao Zhang, Xuanhao Liu, Ming Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 104101 (2023)
https://doi.org/10.1063/5.0166658
Published: September 2023
View article titled, Improvement of the electrical treeing resistance of polymers through the self-arrangement effect of the voltage stabilizer caused by dielectrophoresis under non-uniform electric field
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Journal Articles

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 102102 (2023)
https://doi.org/10.1063/5.0166745
Published: September 2023
View article titled, Control on the density and optical properties of color centers at SiO<sub>2</sub>/SiC interfaces by oxidation and annealing
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Includes: Supplementary data
Journal Articles

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Donguk Kim, Tae Jun Yang, Woo Sik Choi, Hee Jun Lee, Jun Tae Jang, Eunryeong Hong, Woo Young Yang, Minwoo Choi, Ki Yeon Yang, Chang Seung Lee, Jiyong Woo, Dae Hwan Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 072102 (2023)
https://doi.org/10.1063/5.0153403
Published: August 2023
View article titled, Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states
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Journal Articles

Lateral nanoscale field emission comb for frequency mixing

L. B. De Rose, W. M. Jones, A. Scherer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013505 (2023)
https://doi.org/10.1063/5.0150034
Published: July 2023
View article titled, Lateral nanoscale field emission comb for frequency mixing
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Journal Articles

Nb/a-Si/Nb Josephson junctions for high-density superconducting circuits

David I. Olaya, John Biesecker, Manuel A. Castellanos-Beltran, Adam J. Sirois, Peter F. Hopkins, Paul D. Dresselhaus, Samuel P. Benz
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 182601 (2023)
https://doi.org/10.1063/5.0148250
Published: May 2023
View article titled, Nb/<em>a</em>-Si/Nb Josephson junctions for high-density superconducting circuits
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Journal Articles

Utilizing time domain electrical methods to monitor MLCCs' degradation

Pedram Yousefian, Shalini Rajpoot, Clive A. Randall
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 112902 (2023)
https://doi.org/10.1063/5.0138806
Published: March 2023
View article titled, Utilizing time domain electrical methods to monitor MLCCs' degradation
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Journal Articles

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Zheming Wang, Guohao Yu, Xu Yuan, Xuguang Deng, Li Zhang, Shige Dai, Guang Yang, Liguo Zhang, Rongkun Ji, Xiang Kan, Xuan Zhang, Houqiang Fu, Zhongming Zeng, Roy K.-Y. Wong, Yong Cai, Baoshun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062105 (2023)
https://doi.org/10.1063/5.0135550
Published: February 2023
View article titled, Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature
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