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Journal Articles

Lateral nanoscale field emission comb for frequency mixing

L. B. De Rose, W. M. Jones, A. Scherer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013505 (2023)
https://doi.org/10.1063/5.0150034
Published: July 2023
View article titled, Lateral nanoscale field emission comb for frequency mixing
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Journal Articles

III-nitride vertical hot electron transistor with polarization doping and collimated injection

J. W. Daulton, R. J. Molnar, J. A. Brinkerhoff, M. A. Hollis, A. Zaslavsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 223503 (2022)
https://doi.org/10.1063/5.0129920
Published: November 2022
View article titled, III-nitride vertical hot electron transistor with polarization doping and collimated injection
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Journal Articles

First-principles prediction of electron grain boundary scattering in fcc metals

Tianji Zhou, Atharv Jog, Daniel Gall
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 241603 (2022)
https://doi.org/10.1063/5.0098822
Published: June 2022
View article titled, First-principles prediction of electron grain boundary scattering in fcc metals
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Includes: Supplementary data
Journal Articles

Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

Boyu Wang, Jing Ning, Jincheng Zhang, Dong Wang, Xinyi Yang, Yanqing Jia, Chi Zhang, Yu Zeng, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 163504 (2021)
https://doi.org/10.1063/5.0070904
Published: October 2021
View article titled, Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications
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Includes: Supplementary data
Journal Articles

First principles design of Ohmic spin diodes based on quaternary Heusler compounds

T. Aull, E. Şaşıoğlu, I. Mertig
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 052405 (2021)
https://doi.org/10.1063/5.0037085
Published: February 2021
View article titled, First principles design of Ohmic spin diodes based on quaternary Heusler compounds
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Journal Articles

Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap

Abinaya Krishnaraja, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 143505 (2019)
https://doi.org/10.1063/1.5115296
Published: October 2019
View article titled, Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
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Journal Articles

1D ballistic transport channel probed by invasive and non-invasive contacts

Johannes Aprojanz, Ilio Miccoli, Jens Baringhaus, Christoph Tegenkamp
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 191602 (2018)
https://doi.org/10.1063/1.5054393
Published: November 2018
View article titled, 1D ballistic transport channel probed by invasive and non-invasive contacts
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Journal Articles

Spin transport in nanoscale Si-based spin-valve devices

Duong Dinh Hiep, Masaaki Tanaka, Pham Nam Hai
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 232402 (2016)
https://doi.org/10.1063/1.4971351
Published: December 2016
View article titled, Spin transport in nanoscale Si-based spin-valve devices
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Journal Articles

Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

G. C. Dyer, X. Shi, B. V. Olson, S. D. Hawkins, J. F. Klem, E. A. Shaner, W. Pan
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 013106 (2016)
https://doi.org/10.1063/1.4939234
Published: January 2016
View article titled, Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure
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Journal Articles

Device performance simulations of multilayer black phosphorus tunneling transistors

Fei Liu, Qing Shi, Jian Wang, Hong Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 203501 (2015)
https://doi.org/10.1063/1.4935752
Published: November 2015
View article titled, Device performance simulations of multilayer black phosphorus tunneling transistors
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Journal Articles

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

Miho Myodo (明道三穂), Masafumi Inaba (稲葉優文), Kazuyoshi Ohara (大原 一慶), Ryogo Kato (加藤良吾), Mikinori Kobayashi (小林幹典), Yu Hirano (平野優), Kazuma Suzuki (鈴木和真), Hiroshi Kawarada (川原田洋)
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 213503 (2015)
https://doi.org/10.1063/1.4921454
Published: May 2015
View article titled, Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution
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Journal Articles

Terahertz harmonic generation in graphene

Samwel Sekwao, Jean-Pierre Leburton
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 063109 (2015)
https://doi.org/10.1063/1.4908293
Published: February 2015
View article titled, Terahertz harmonic generation in graphene
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Journal Articles

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 032101 (2015)
https://doi.org/10.1063/1.4906287
Published: January 2015
View article titled, Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
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Journal Articles

Negative differential resistance in GaN tunneling hot electron transistors

Zhichao Yang, Digbijoy Nath, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 202111 (2014)
https://doi.org/10.1063/1.4900780
Published: November 2014
View article titled, Negative differential resistance in GaN tunneling hot electron transistors
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Journal Articles

Temperature-dependent diffusive to ballistic transport transition in aligned double walled carbon nanotubes in the high frequency regime

George Chimowa, Emmanuel Flahaut, Somnath Bhattacharyya
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 173511 (2014)
https://doi.org/10.1063/1.4901025
Published: October 2014
View article titled, Temperature-dependent diffusive to ballistic transport transition in aligned double walled carbon nanotubes in the high frequency regime
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Includes: Supplementary data
Journal Articles

Simulation of phosphorene Schottky-barrier transistors

Runlai Wan, Xi Cao, Jing Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 163511 (2014)
https://doi.org/10.1063/1.4900410
Published: October 2014
View article titled, Simulation of phosphorene Schottky-barrier transistors
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Journal Articles

The features of ballistic electron transport in a suspended quantum point contact

A. A. Shevyrin, A. G. Pogosov, M. V. Budantsev, A. K. Bakarov, A. I. Toropov, S. V. Ishutkin, E. V. Shesterikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 203102 (2014)
https://doi.org/10.1063/1.4878398
Published: May 2014
View article titled, The features of ballistic electron transport in a suspended quantum point contact
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Journal Articles

Thermal rectification of electrons in hybrid normal metal-superconductor nanojunctions

F. Giazotto, F. S. Bergeret
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 242602 (2013)
https://doi.org/10.1063/1.4846375
Published: December 2013
View article titled, Thermal rectification of electrons in hybrid normal metal-superconductor nanojunctions
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Journal Articles

Impact of the contact's geometry on the line resistivity of carbon nanotubes bundles for applications as horizontal interconnects

N. Chiodarelli, A. Fournier, J. Dijon
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 053115 (2013)
https://doi.org/10.1063/1.4817648
Published: August 2013
View article titled, Impact of the contact's geometry on the line resistivity of carbon nanotubes bundles for applications as horizontal interconnects
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Journal Articles

Quantized conductance and evidence for zitterbewegung in InAs spin filters

Till Benter, Hauke Lehmann, Toru Matsuyama, Wolfgang Hansen, Christian Heyn, Ulrich Merkt, Jan Jacob
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 212405 (2013)
https://doi.org/10.1063/1.4807435
Published: May 2013
View article titled, Quantized conductance and evidence for zitterbewegung in InAs spin filters
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