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Journal Articles

Effect of a second-harmonic current–phase relation on the behavior of a Josephson traveling-wave parametric amplifier

Claudio Guarcello, Carlo Barone, Giovanni Carapella, Giovanni Filatrella, Andrea Giachero, Sergio Pagano
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162602 (2025)
https://doi.org/10.1063/5.0262555
Published: April 2025
View articletitled, Effect of a second-harmonic current–phase relation on the behavior of a Josephson traveling-wave parametric amplifier
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Journal Articles

Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions

Editor’s Pick
Xueyan Bai, Daifeng Zou, Chihou Lei, Zhijian He, Yunya Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162902 (2025)
https://doi.org/10.1063/5.0258003
Published: April 2025
View articletitled, Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions
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Journal Articles

Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts

Zhaofeng Wang, Zhihong Liu, Xiaojin Chen, Xing Chen, Hanghai Du, Weichuan Xing, Weihang Zhang, Shenglei Zhao, Xiangdong Li, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152104 (2025)
https://doi.org/10.1063/5.0256979
Published: April 2025
View articletitled, Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts
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Journal Articles

Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier

Yating Cao, Jingchao Xiao, Haoxin Qiao, Wei Zhang, Yubao Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062904 (2025)
https://doi.org/10.1063/5.0250527
Published: February 2025
View articletitled, Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier
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Journal Articles

High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method

Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu, Xiao Wang, Yang Li, Jinping Ao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022111 (2025)
https://doi.org/10.1063/5.0238924
Published: January 2025
View articletitled, High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method
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Journal Articles

Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

Hongyuan Zhao, Jiangni Yun, Linwei Yao, Lin Zhang, Jinyuan Liu, Junfeng Yan, Lei Zheng, Peng Kang, Wu Zhao, Zhiyong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 013508 (2025)
https://doi.org/10.1063/5.0242551
Published: January 2025
View articletitled, Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions
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Journal Articles

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

Editor’s Pick
Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki, Toshio Kitamura, Fumimasa Horikiri, Hajime Fujikura, Shinichiro Takatani, Tomoyoshi Mishima
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012101 (2025)
https://doi.org/10.1063/5.0242225
Published: January 2025
View articletitled, 6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma
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Journal Articles

Enhanced tunneling electroresistance in ferroelectric tunnel junctions achieved through dual interface control

Zhijun Ma, Qi Zhang, Zeyu Zhang, Yizhong Guo, Yongqi Ruan, Zhiwei Wang, Peng Zhou, Mikayla Lord, Ji Luo, Shuai Liu, Nagarajan Valanoor, Tianjin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 262903 (2024)
https://doi.org/10.1063/5.0220789
Published: December 2024
View articletitled, Enhanced tunneling electroresistance in ferroelectric tunnel junctions achieved through dual interface control
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Journal Articles

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON

Jiawei Cui, Junjie Yang, Jingjing Yu, Teng Li, Han Yang, Xiaosen Liu, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 173503 (2024)
https://doi.org/10.1063/5.0232619
Published: October 2024
View articletitled, GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON
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Journal Articles

Hafnia-based neuromorphic devices

Featured
Hai Zhong, Kuijuan Jin, Chen Ge
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150501 (2024)
https://doi.org/10.1063/5.0226206
Published: October 2024
View articletitled, Hafnia-based neuromorphic devices
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Journal Articles

Gallium nitride-based resonant tunneling diode oscillators

Editor’s Pick
Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 113503 (2024)
https://doi.org/10.1063/5.0225312
Published: September 2024
View articletitled, Gallium nitride-based resonant tunneling diode oscillators
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Journal Articles

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

Zhijun Wu, Tianpeng Duan, Zhihong Tian, Yongheng Jiang, Yichun Zhou, Jie Jiang, Qiong Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112903 (2024)
https://doi.org/10.1063/5.0216890
Published: September 2024
View articletitled, Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier
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Journal Articles

High electroresistance in all-oxide ferroelectric tunnel junctions enabled by a narrow bandgap Mott insulator electrode

Yuanyuan Zhang, Yifei Hao, Le Zhang, Kun Wang, Xia Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102904 (2024)
https://doi.org/10.1063/5.0223348
Published: September 2024
View articletitled, High electroresistance in all-oxide ferroelectric tunnel junctions enabled by a narrow bandgap Mott insulator electrode
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Journal Articles

Transparent antenna with RCS tunability based on graphene and metasurface in S band

Heng Zhang, Yongna Zhang, Li Shao, Guanxu Liu, Zhihao Zhou, Haofei Shi, Mingxing Piao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 103501 (2024)
https://doi.org/10.1063/5.0219746
Published: September 2024
View articletitled, Transparent antenna with RCS tunability based on graphene and metasurface in S band
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Journal Articles

Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior

Editor’s Pick
Yong Chen, Peng Duan, Zhi-Long Jia, Xin-Xin Yang, Lei Du, Hao-Ran Tao, Chi Zhang, Liang-Liang Guo, Hai-Feng Zhang, Tian-Le Wang, Ze-An Zhao, Xiao-Yan Yang, Sheng Zhang, Ren-Ze Zhao, Peng Wang, Wei-Cheng Kong, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 094001 (2024)
https://doi.org/10.1063/5.0223366
Published: August 2024
View articletitled, Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior
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Journal Articles

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Jialong Qi, Huizhen Han, Shuli Yang, Lili Kang, Huabing Yin, Gaofeng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042903 (2024)
https://doi.org/10.1063/5.0219253
Published: July 2024
View articletitled, Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications
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Journal Articles

Multi-channel GaN varactors and their current conduction mechanisms

Wensong Zou, Jiawei Chen, Xiaoxiang Hou, Peng Xiang, Kai Cheng, Qingfeng Zhang, Jun Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032105 (2024)
https://doi.org/10.1063/5.0217767
Published: July 2024
View articletitled, Multi-channel GaN varactors and their current conduction mechanisms
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Journal Articles

High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

Featured
Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata, Hiroshi Funakubo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032904 (2024)
https://doi.org/10.1063/5.0202063
Published: July 2024
View articletitled, High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
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Journal Articles

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 263101 (2024)
https://doi.org/10.1063/5.0209432
Published: June 2024
View articletitled, Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
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Journal Articles

3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

Editor’s Pick
Jiangbin Wan, Hengyu Wang, Chi Zhang, Yanjun Li, Ce Wang, Haoyuan Cheng, Junze Li, Na Ren, Qing Guo, Kuang Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 243504 (2024)
https://doi.org/10.1063/5.0211183
Published: June 2024
View articletitled, 3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism
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