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Journal Articles

Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

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Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joosun Yun, June-O Song, Dong-Soo Shin, Jong-In Shim, Joon Seop Kwak
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043503 (2025)
https://doi.org/10.1063/5.0237557
Published: January 2025
View articletitled, Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs
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Journal Articles

High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm

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Jordan M. Smith, Panpan Li, Ryan Ley, Matthew S. Wong, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 251107 (2024)
https://doi.org/10.1063/5.0235915
Published: December 2024
View articletitled, High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm
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Journal Articles

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Open Access
Rinat Yapparov, Tanay Tak, Jacob Ewing, Feng Wu, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 031108 (2024)
https://doi.org/10.1063/5.0215336
Published: July 2024
View articletitled, Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
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Journal Articles

4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C

Open Access
Hesham Okeil, Gerhard Wachutka
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 192101 (2024)
https://doi.org/10.1063/5.0189054
Published: May 2024
View articletitled, 4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C
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Journal Articles

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

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Zesen Liu, Jianhong Zhang, Jiandong Ye, Yating Shi, Jie Fu, Yiwang Wang, Weizong Xu, Dong Zhou, Feng Zhou, Rong Zhang, Hai Lu, Fang-Fang Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 161112 (2024)
https://doi.org/10.1063/5.0193027
Published: April 2024
View articletitled, Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance
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Includes: Supplementary data
Journal Articles

Revealing evolutions of intermetallics in a solder joint under electromigration: A quasi-in situ study combining 3D microstructural characterization and numerical simulation

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H. Y. Yuan, C. Li, H. Z. Zhang, M. Z. Fan, Z. L. Ma, X. W. Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 231904 (2023)
https://doi.org/10.1063/5.0176416
Published: December 2023
View articletitled, Revealing evolutions of intermetallics in a solder joint under electromigration: A quasi-in situ study combining 3D microstructural characterization and numerical simulation
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Includes: Supplementary data
Journal Articles

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

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Wan Ying Ho, Cameron W. Johnson, Tanay Tak, Mylène Sauty, Yi Chao Chow, Shuji Nakamura, Andreas Schmid, Jacques Peretti, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 031101 (2023)
https://doi.org/10.1063/5.0153947
Published: July 2023
View articletitled, Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)
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Includes: Supplementary data
Journal Articles

Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers

Open Access
S. K. Khamari, S. Arslan, C. Zink, S. J. Sweeney, P. Crump
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 211101 (2023)
https://doi.org/10.1063/5.0149986
Published: May 2023
View articletitled, Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
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Journal Articles

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

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Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212103 (2023)
https://doi.org/10.1063/5.0150029
Published: May 2023
View articletitled, Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
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Includes: Supplementary data
Journal Articles

Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration

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Ke Sun, Yinzuo Qian, Zhenxing Lv, Shengli Qi, Shengjun Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 202104 (2023)
https://doi.org/10.1063/5.0148796
Published: May 2023
View articletitled, Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration
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Journal Articles

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

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Kunzi Liu, Li Chen, Tian Luo, Zihui Zhao, Ping Ouyang, Jiaxin Zhang, Qiushuang Chen, Biao Zhou, Shengli Qi, Houqiang Xu, Zhenhai Yang, Wei Guo, Jichun Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 241105 (2022)
https://doi.org/10.1063/5.0131013
Published: December 2022
View articletitled, Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes
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Includes: Supplementary data
Journal Articles

Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

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Yue-Hua Hong, Xue-Feng Zheng, Yun-Long He, Hao Zhang, Zi-Jian Yuan, Xiang-Yu Zhang, Fang Zhang, Ying-Zhe Wang, Xiao-Li Lu, Wei Mao, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 212102 (2022)
https://doi.org/10.1063/5.0128736
Published: November 2022
View articletitled, Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring
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Includes: Supplementary data
Journal Articles

Fast and efficient detection of a single photon with hole-patterned superconductor microstrips

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Feiyan Li, Yuqing Guo, Kangjie Liu, Labao Zhang, Qi Chen, Xiaohan Wang, Biao Zhang, Yue Dai, Jingrou Tan, Guanglong He, Yue Fei, Hao Wang, Xuecou Tu, Qingyuan Zhao, Xiaoqing Jia, Lin Kang, Jian Chen, Peiheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 122601 (2022)
https://doi.org/10.1063/5.0109206
Published: September 2022
View articletitled, Fast and efficient detection of a single photon with hole-patterned superconductor microstrips
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Journal Articles

Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

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Youn Joon Sung, Dong-Woo Kim, Geun Young Yeom, Kyu Sang Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 231102 (2021)
https://doi.org/10.1063/5.0052416
Published: June 2021
View articletitled, Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density
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Journal Articles

AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier

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Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Yuh-Renn Wu, Yu-Zung Chiou, Cheng-Huang Kuo, Jinn-Kong Sheu
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 251101 (2020)
https://doi.org/10.1063/5.0026911
Published: December 2020
View articletitled, AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier
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Journal Articles

Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

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S. Arslan, R. B. Swertfeger, J. Fricke, A. Ginolas, C. Stölmacker, H. Wenzel, P. A. Crump, S. K. Patra, R. J. Deri, M. C. Boisselle, D. L. Pope, P. O. Leisher
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 203506 (2020)
https://doi.org/10.1063/5.0020259
Published: November 2020
View articletitled, Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
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Journal Articles

Tailoring interdigitated back contacts for high-performance bifacial silicon solar cells

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Yubo Sun, Zhiguang Zhou, Reza Asadpour, Muhammad A. Alam, Peter Bermel
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 103901 (2019)
https://doi.org/10.1063/1.5080075
Published: March 2019
View articletitled, Tailoring interdigitated back contacts for high-performance bifacial silicon solar cells
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Journal Articles

Thermal characterization of gallium nitride p-i-n diodes

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J. Dallas, G. Pavlidis, B. Chatterjee, J. S. Lundh, M. Ji, J. Kim, T. Kao, T. Detchprohm, R. D. Dupuis, S. Shen, S. Graham, S. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 073503 (2018)
https://doi.org/10.1063/1.5006796
Published: February 2018
View articletitled, Thermal characterization of gallium nitride p-i-n diodes
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Includes: Supplementary data
Journal Articles

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

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Yuhao Zhang, Min Sun, Daniel Piedra, Jonas Hennig, Armin Dadgar, Tomás Palacios
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 163506 (2017)
https://doi.org/10.1063/1.4989599
Published: October 2017
View articletitled, Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
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Journal Articles

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

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Shen-Che Huang, Heng Li, Zhe-Han Zhang, Hsiang Chen, Shing-Chung Wang, Tien-Chang Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 021108 (2017)
https://doi.org/10.1063/1.4973966
Published: January 2017
View articletitled, Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme
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