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Journal Articles

Pressure-induced phase transitions and metallization in layered SnSe

Yuhua Luo, Yuyang Shi, Min Wu, Ye Wu, Kai Wang, Bingtian Tu, Haijun Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 094101 (2023)
https://doi.org/10.1063/5.0166387
Published: August 2023
View article titled, Pressure-induced phase transitions and metallization in layered SnSe
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Includes: Supplementary data
Journal Articles

Lower-temperature fabrication of airbridges by grayscale lithography to increase yield of nanowire transmons in circuit QED quantum processors

T. Stavenga, S. A. Khan, Y. Liu, P. Krogstrup, L. DiCarlo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 024004 (2023)
https://doi.org/10.1063/5.0146814
Published: July 2023
View article titled, Lower-temperature fabrication of airbridges by grayscale lithography to increase yield of nanowire transmons in circuit QED quantum processors
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Includes: Supplementary data
Journal Articles

Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies

Lei Li, Steve Reyes, Mohammad Javad Asadi, Patrick Fay, James C. M. Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 012105 (2023)
https://doi.org/10.1063/5.0148623
Published: July 2023
View article titled, Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies
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Includes: Supplementary data
Journal Articles

Indium-bond-and-stop-etch (IBASE) technique for dual-side processing of thin high-mobility GaAs/AlGaAs epitaxial layers

C. Yoo, K. W. West, L. N. Pfeiffer, C. A. Curwen, J. H. Kawamura, B. S. Karasik, M. S. Sherwin
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233502 (2023)
https://doi.org/10.1063/5.0147343
Published: June 2023
View article titled, Indium-bond-and-stop-etch (IBASE) technique for dual-side processing of thin high-mobility GaAs/AlGaAs epitaxial layers
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Includes: Supplementary data
Journal Articles

Enhanced resistive switching uniformity in HfO2/TiO2 NWA memristor for synaptic simulation

Yudong Sun, Jing Wang, Dong He, Menghua Yang, Changzhong Jiang, Wenqing Li, Xiangheng Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 133501 (2023)
https://doi.org/10.1063/5.0140746
Published: March 2023
View article titled, Enhanced resistive switching uniformity in HfO<sub>2</sub>/TiO<sub>2</sub> NWA memristor for synaptic simulation
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Includes: Supplementary data
Journal Articles

Metallization of hydrogen by intercalating ammonium ions in metal fcc lattices at lower pressure

Zhongyu Wan, Ruiqin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 192601 (2022)
https://doi.org/10.1063/5.0127365
Published: November 2022
View article titled, Metallization of hydrogen by intercalating ammonium ions in metal fcc lattices at lower pressure
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Includes: Supplementary data
Journal Articles

Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3

Jaehyeok Lee, Hyeongmin Cho, Bongju Kim, Myoungho Jeong, Kiyoung Lee, Kookrin Char
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 142102 (2022)
https://doi.org/10.1063/5.0116527
Published: October 2022
View article titled, Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO<sub>3</sub>
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Includes: Supplementary data
Journal Articles

Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization

Sumiko Fujisaki, Yoshihide Yamaguchi, Hiroyuki Kobayashi, Kazunori Shinoda, Masaki Yamada, Hirotaka Hamamura, Kohei Kawamura, Masaru Izawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 122102 (2022)
https://doi.org/10.1063/5.0096949
Published: September 2022
View article titled, Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization
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Journal Articles

Chlorine-based non-covalent graphene analog on Cu(111)

Xinchen Peng, Lei Xiao, Xinbang Liu, Yinyue Qian, Yonghao Zhang, Wei Jiang, Qingmin Ji, Harald Fuchs, Huihui Kong
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 221601 (2022)
https://doi.org/10.1063/5.0089461
Published: May 2022
View article titled, Chlorine-based non-covalent graphene analog on Cu(111)
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Includes: Supplementary data
Journal Articles

Semiconductor-metal transition in lead iodide under pressure

Peng Cheng, Yunfeng Wang, Tingting Ye, Lingqiao Chu, Jin Yang, Hong Zeng, Deyuan Yao, Xiaomei Pan, Jie Zhang, Huachao Jiang, Fuhai Su, Junfeng Ding
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 212104 (2022)
https://doi.org/10.1063/5.0095525
Published: May 2022
View article titled, Semiconductor-metal transition in lead iodide under pressure
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Includes: Supplementary data
Journal Articles

Experimental demonstration of ultrathin broken-symmetry metasurfaces with controllably sharp resonant response

Odysseas Tsilipakos, Luca Maiolo, Francesco Maita, Romeo Beccherelli, Maria Kafesaki, Emmanouil E. Kriezis, Traianos V. Yioultsis, Dimitrios C. Zografopoulos
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 231601 (2021)
https://doi.org/10.1063/5.0073803
Published: December 2021
View article titled, Experimental demonstration of ultrathin broken-symmetry metasurfaces with controllably sharp resonant response
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Includes: Supplementary data
Journal Articles

Vacuum-gap transmon qubits realized using flip-chip technology

Xuegang Li, Yingshan Zhang, Chuhong Yang, Zhiyuan Li, Junhua Wang, Tang Su, Mo Chen, Yongchao Li, Chengyao Li, Zhenyu Mi, Xuehui Liang, Chenlu Wang, Zhen Yang, Yulong Feng, Kehuan Linghu, Huikai Xu, Jiaxiu Han, Weiyang Liu, Peng Zhao, Teng Ma, Ruixia Wang, Jingning Zhang, Yu Song, Pei Liu, Ziting Wang, Zhaohua Yang, Guangming Xue, Yirong Jin, Haifeng Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 184003 (2021)
https://doi.org/10.1063/5.0068255
Published: November 2021
View article titled, Vacuum-gap transmon qubits realized using flip-chip technology
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Includes: Supplementary data
Journal Articles

Atomic layer deposition of TiN/Ru gate in InP MOSFETs

Hsin-Ying Tseng, Yihao Fang, William James Mitchell, Aidan Arthur Taylor, Mark J. W. Rodwell
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 123502 (2021)
https://doi.org/10.1063/5.0058825
Published: September 2021
View article titled, Atomic layer deposition of TiN/Ru gate in InP MOSFETs
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Journal Articles

Predicted metallization of hydrogen nanograins at low pressures

Haile Lei, Xibo Li, Wei Lin, Kai Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 121602 (2021)
https://doi.org/10.1063/5.0060977
Published: September 2021
View article titled, Predicted metallization of hydrogen nanograins at low pressures
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Journal Articles

Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature

Patrick D. Lomenzo, Ruben Alcala, Claudia Richter, Songrui Li, Thomas Mikolajick, Uwe Schroeder
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 112903 (2021)
https://doi.org/10.1063/5.0062789
Published: September 2021
View article titled, Pyroelectric dependence of atomic layer-deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on film thickness and annealing temperature
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Includes: Supplementary data
Journal Articles

High quality planar Cd1-xMnxTe room-temperature radiation detectors

A. Brovko, P. Rusian, L. Chernyak, A. Ruzin
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 062103 (2021)
https://doi.org/10.1063/5.0060706
Published: August 2021
View article titled, High quality planar Cd<sub>1-x</sub>Mn<sub>x</sub>Te room-temperature radiation detectors
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Journal Articles

Stress-controlled n–p conductivity switch based on intercalated ZrTe2

Natalia V. Morozova, Igor V. Korobeynikov, Elena G. Shkvarina, Alexey A. Titov, Alexander N. Titov, Sergey V. Ovsyannikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 053103 (2021)
https://doi.org/10.1063/5.0050611
Published: August 2021
View article titled, Stress-controlled <em>n–p</em> conductivity switch based on intercalated ZrTe<sub>2</sub>
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Journal Articles

Ba4Al2Ti10O27 based glass ceramic as dielectric in high frequency applications

M. Letz, M. Hovhannisyan, F. Bergmann, Xiaofei Bai, H. Engelmann, G. Weidmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 052903 (2021)
https://doi.org/10.1063/5.0055546
Published: August 2021
View article titled, Ba<sub>4</sub>Al<sub>2</sub>Ti<sub>10</sub>O<sub>27</sub> based glass ceramic as dielectric in high frequency applications
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Journal Articles

Microscopic metallic air-bridge arrays for connecting quantum devices

Y. Jin, M. Moreno, P. M. T. Vianez, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 162108 (2021)
https://doi.org/10.1063/5.0045557
Published: April 2021
View article titled, Microscopic metallic air-bridge arrays for connecting quantum devices
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Journal Articles

Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

V. R. Saran Kumar Chaganti, Prafful Golani, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 142104 (2021)
https://doi.org/10.1063/5.0027470
Published: April 2021
View article titled, Optimizing Ohmic contacts to Nd-doped n-type SrSnO<sub>3</sub>
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Includes: Supplementary data