1-20 of 1041
Magnetic memories
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Half-metallic Fe/MgO superlattice: An ideal candidate for magnetic tunnel junction electrodes

Available to Purchase
Nicholas A. Lanzillo, Sergey Faleev, Aakash Pushp
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242404 (2025)
https://doi.org/10.1063/5.0267521
Published: June 2025
View articletitled, Half-metallic Fe/MgO superlattice: An ideal candidate for magnetic tunnel junction electrodes
Open the PDF for Half-metallic Fe/MgO superlattice: An ideal candidate for magnetic tunnel junction electrodes in another window
Journal Articles

In-plane and out-of-plane planar Hall effect

FeaturedAvailable to Purchase
Qingwang Bai, Mingxiang Xu, Guangdong Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242401 (2025)
https://doi.org/10.1063/5.0274482
Published: June 2025
View articletitled, In-plane and out-of-plane planar Hall effect
Open the PDF for In-plane and out-of-plane planar Hall effect in another window
Journal Articles

Perpendicularly magnetized synthetic antiferromagnetic MnxGa/Co2FeAl bilayers on MgAl2O4 substrate

Available to Purchase
Rongkun Han, Fengyue He, Dong Pan, Dahai Wei, Jianhua Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232407 (2025)
https://doi.org/10.1063/5.0267808
Published: June 2025
View articletitled, Perpendicularly magnetized synthetic antiferromagnetic MnxGa/Co2FeAl bilayers on MgAl2O4 substrate
Open the PDF for Perpendicularly magnetized synthetic antiferromagnetic MnxGa/Co2FeAl bilayers on MgAl2O4 substrate in another window
Journal Articles

Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories

Editor’s PickAvailable to Purchase
Fei Xu, Lei Zhou, Wenlong Cai, Kangning Xu, Kaihua Cao, Kewen Shi, Weisheng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232405 (2025)
https://doi.org/10.1063/5.0266924
Published: June 2025
View articletitled, Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories
Open the PDF for Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories in another window
Journal Articles

Spin glass-like and exchange bias behavior in the van der Waals Fe1/4-δNbS2 single crystal

Available to Purchase
Shuang Pan, Yuqing Bai, Xinji Xiang, Bin Chen, Zhishuo Zhang, Guizhou Xu, Feng Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 222405 (2025)
https://doi.org/10.1063/5.0251675
Published: June 2025
View articletitled, Spin glass-like and exchange bias behavior in the van der Waals Fe1/4-δNbS2 single crystal
Open the PDF for Spin glass-like and exchange bias behavior in the van der Waals Fe1/4-δNbS2 single crystal in another window
Journal Articles

Giant tunneling magnetoresistance effect of van der Waals magnetic tunnel junction Fe3GaTe2/InSe/Fe3GaTe2

Available to Purchase
Ruiren Liu, Jiamin Zhou, Ru Zhang, Hao Yuan, Xiaxia Liao, Yangbo Zhou, Jingjing He, Jiaren Yuan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 222403 (2025)
https://doi.org/10.1063/5.0268065
Published: June 2025
View articletitled, Giant tunneling magnetoresistance effect of van der Waals magnetic tunnel junction Fe3GaTe2/InSe/Fe3GaTe2
Open the PDF for Giant tunneling magnetoresistance effect of van der Waals magnetic tunnel junction Fe3GaTe2/InSe/Fe3GaTe2 in another window
Journal Articles

High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions

Available to Purchase
Ahmed Sidi El Valli, Michael Tsao, J. Darby Smith, Shashank Misra, Andrew D. Kent
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 212403 (2025)
https://doi.org/10.1063/5.0259366
Published: May 2025
View articletitled, High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions
Open the PDF for High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions in another window
Journal Articles

Training-free and stochastic magnetic tunnel junction-based restricted Boltzmann machine for Boolean satisfiability problem

Available to Purchase
Wei Duan, Zhen Cao, Kaiyuan Wang, Xiaozhou Ye, Long You
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 212401 (2025)
https://doi.org/10.1063/5.0240005
Published: May 2025
View articletitled, Training-free and stochastic magnetic tunnel junction-based restricted Boltzmann machine for Boolean satisfiability problem
Open the PDF for Training-free and stochastic magnetic tunnel junction-based restricted Boltzmann machine for Boolean satisfiability problem in another window
Journal Articles

Stochastic neuron based on dual-free-layer magnetic tunnel junction

Editor’s PickAvailable to Purchase
Renjuan Luo, Shuhui Liu, Like Zhang, Yujie Wang, Zhenhao Liu, Yanxiang Luo, Bin Fang, Zhongming Zeng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192401 (2025)
https://doi.org/10.1063/5.0260901
Published: May 2025
View articletitled, Stochastic neuron based on dual-free-layer magnetic tunnel junction
Open the PDF for Stochastic neuron based on dual-free-layer magnetic tunnel junction in another window
Journal Articles

Tunnel-magnetoresistance sensors with sub-pT detectivity for detecting bio-magnetic fields

Open Access
Takafumi Nakano, Kosuke Fujiwara, Mikihiko Oogane
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 160503 (2025)
https://doi.org/10.1063/5.0263879
Published: April 2025
View articletitled, Tunnel-magnetoresistance sensors with sub-pT detectivity for detecting bio-magnetic fields
Open the PDF for Tunnel-magnetoresistance sensors with sub-pT detectivity for detecting bio-magnetic fields in another window
Journal Articles

Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders

Available to Purchase
Yuqi Liu, Long Zhang, Xuming Wu, Guoying Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162404 (2025)
https://doi.org/10.1063/5.0265302
Published: April 2025
View articletitled, Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders
Open the PDF for Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders in another window
Journal Articles

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

Editor’s PickAvailable to Purchase
S. Geiskopf, J. Igarashi, G. Malinowski, J.-X. Lin, J. Gorchon, S. Mangin, J. Hohlfeld, D. Lacour, M. Hehn
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152405 (2025)
https://doi.org/10.1063/5.0254042
Published: April 2025
View articletitled, Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction
Open the PDF for Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction in another window
Journal Articles

Electrically induced Dzyaloshinskii–Moriya interaction and exchange bias in a van der Waals magnet Cr1.2Te2

Available to Purchase
Hengning Wang, Liming Wang, Xiang Ma, Chuandi Pan, Yan Wang, Jie Wang, Shouguo Wang, Kai Chang, Bin Xiang, Hongxin Yang, Guolin Zheng, Mingliang Tian
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143103 (2025)
https://doi.org/10.1063/5.0258322
Published: April 2025
View articletitled, Electrically induced Dzyaloshinskii–Moriya interaction and exchange bias in a van der Waals magnet Cr1.2Te2
Open the PDF for Electrically induced Dzyaloshinskii–Moriya interaction and exchange bias in a van der Waals magnet Cr1.2Te2 in another window
Journal Articles

Application of probabilistic bits in measurement and sensing

Available to Purchase
Yunwen Liu, Jiang Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122403 (2025)
https://doi.org/10.1063/5.0253449
Published: March 2025
View articletitled, Application of probabilistic bits in measurement and sensing
Open the PDF for Application of probabilistic bits in measurement and sensing in another window
Journal Articles

Unconventional spin-to-charge conversion in MnPd3

Editor’s PickAvailable to Purchase
Mahendra DC, Punyashloka Debashis, Christopher Gay, Jennifer Lux, Yu Zhang, Dominique Adams, Fen Xue, Carly Rogan, Tyrone Wilson, Raphael Toku, Joshua Kevek, Tristan A Tronic, Scott B. Clendenning, Adedapo A. Oni, Marko Radosavljevic, Shan X. Wang, Ian A. Young
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112401 (2025)
https://doi.org/10.1063/5.0251602
Published: March 2025
View articletitled, Unconventional spin-to-charge conversion in MnPd3
Open the PDF for Unconventional spin-to-charge conversion in MnPd3 in another window
Journal Articles

A design of magnetic tunnel junctions for the deployment of neuromorphic hardware for edge computing

FeaturedAvailable to Purchase
Davi Rodrigues, Eleonora Raimondo, Riccardo Tomasello, Mario Carpentieri, Giovanni Finocchio
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 092402 (2025)
https://doi.org/10.1063/5.0237090
Published: March 2025
View articletitled, A design of magnetic tunnel junctions for the deployment of neuromorphic hardware for edge computing
Open the PDF for A design of magnetic tunnel junctions for the deployment of neuromorphic hardware for edge computing in another window
Journal Articles

Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface

Available to Purchase
Y.-N. Apriati, K. Nawa, K. Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082403 (2025)
https://doi.org/10.1063/5.0248379
Published: February 2025
View articletitled, Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface
Open the PDF for Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface in another window
Journal Articles

Field-free switching of perpendicular magnetization via out-of-plane spin-polarization induced by Ta with crystalline phase gradient

Available to Purchase
Guang Zeng, Yipei Zhang, Lixuan Xu, Cuimei Cao, Ruoshi Li, Adnan Khan, Long You, Shiwei Chen, Shiheng Liang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 072406 (2025)
https://doi.org/10.1063/5.0248107
Published: February 2025
View articletitled, Field-free switching of perpendicular magnetization via out-of-plane spin-polarization induced by Ta with crystalline phase gradient
Open the PDF for Field-free switching of perpendicular magnetization via out-of-plane spin-polarization induced by Ta with crystalline phase gradient in another window
Journal Articles

Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

Editor’s PickOpen Access
Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022407 (2025)
https://doi.org/10.1063/5.0247660
Published: January 2025
View articletitled, Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers
Open the PDF for Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers in another window
Journal Articles

Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer

Available to Purchase
Lui Sakai, Yutaka Higo, Masanori Hosomi, Rie Matsumoto, Takayuki Nozaki, Shinji Yuasa, Hiroshi Imamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022401 (2025)
https://doi.org/10.1063/5.0241713
Published: January 2025
View articletitled, Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer
Open the PDF for Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer in another window