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Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

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Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View articletitled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
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Journal Articles

Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE

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Frank P. Kelly, Matthew M. Landi, Kyekyoon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
https://doi.org/10.1063/5.0260105
Published: April 2025
View articletitled, Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
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Journal Articles

Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter

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Ramit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi, Nethaji Dharmarasu, K. Radhakrishnan, Munho Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172101 (2025)
https://doi.org/10.1063/5.0259594
Published: April 2025
View articletitled, Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter
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Journal Articles

Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate

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Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162105 (2025)
https://doi.org/10.1063/5.0268847
Published: April 2025
View articletitled, Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate
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Journal Articles

Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes

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Sai Charan Vanjari, Aditya K. Bhat, Haiqi Huang, Matthew D. Smith, James W. Pomeroy, Martin Kuball
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 163502 (2025)
https://doi.org/10.1063/5.0260734
Published: April 2025
View articletitled, Breakdown-induced directional cracking in kilovolt-class β -Ga2O3 (001) vertical trench Schottky barrier diodes
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Journal Articles

Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

Open Access
Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152109 (2025)
https://doi.org/10.1063/5.0251499
Published: April 2025
View articletitled, Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
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Journal Articles

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

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Shubo Wei, Zifan Hong, Chengchao Li, Mingtao Long, Ying Li, Yujian Chen, Feng Zhang, Weifeng Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152108 (2025)
https://doi.org/10.1063/5.0254888
Published: April 2025
View articletitled, Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment
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Journal Articles

Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film

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Fengxin Liu, Qi Zhang, Yue Chen, Qiang Li, Xingye Zhang, Kang Gao, Kuan Kuang, Haohua Xu, Shiheng Liang, Chuansheng Liu, Mingkai Li, Yunbin He
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 153501 (2025)
https://doi.org/10.1063/5.0239201
Published: April 2025
View articletitled, Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film
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Journal Articles

Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements

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Qingru Wang, Yu Zhou, Xiaozhuang Lu, Xiaoning Zhan, Quan Dai, Jianxun Liu, Qian Li, Xinkun Zhang, Yamin Zhang, Qian Sun, Shiwei Feng, Zhihong Feng, Meixin Feng, Xin Chen, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 142102 (2025)
https://doi.org/10.1063/5.0263898
Published: April 2025
View articletitled, Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
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Journal Articles

(Ultra)wide-bandgap semiconductors for extreme environment electronics

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Rongming Chu, Kevin Chen, Carl-Mikael Zetterling, Ronald Schrimpf
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 120401 (2025)
https://doi.org/10.1063/5.0266356
Published: March 2025
View articletitled, (Ultra)wide-bandgap semiconductors for extreme environment electronics
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Journal Articles

Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective

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Sijie Bu, Yingzhe Wang, Xuefeng Zheng, Shaozhong Yue, Danmei Lin, Longbing Yi, Vazgen Melikyan, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122104 (2025)
https://doi.org/10.1063/5.0260529
Published: March 2025
View articletitled, Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective
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Journal Articles

710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage

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Xiufeng Song, Shenglei Zhao, Kui Dang, Longyang Yu, Menghan Zheng, Yixin Yao, Yachao Zhang, Zhihong Liu, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 103501 (2025)
https://doi.org/10.1063/5.0253346
Published: March 2025
View articletitled, 710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage
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Journal Articles

Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension

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Qiuyan Li, Jinyang Liu, Weibing Hao, Xinrui Xu, Zhao Han, Song He, Xiaodong Xu, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 092102 (2025)
https://doi.org/10.1063/5.0248466
Published: March 2025
View articletitled, Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension
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Journal Articles

The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method

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P. Kruszewski, A. Fiedler, Z. Galazka
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062110 (2025)
https://doi.org/10.1063/5.0251567
Published: February 2025
View articletitled, The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
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Journal Articles

3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN

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Qingyuan Chang, Bin Hou, Ling Yang, Mao Jia, Youjun Zhu, Mei Wu, Meng Zhang, Qing Zhu, Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062102 (2025)
https://doi.org/10.1063/5.0243637
Published: February 2025
View articletitled, 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
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Journal Articles

Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction

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Kesen Ding, Chunyang Bi, Yu Ao, Liyu Cheng, Hailong Fang, Yazhou Dong, Hongji Zhou, Xun Wang, Zhenpeng Zhang, Shixiong Liang, Sen Gong, Yaxin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 031107 (2025)
https://doi.org/10.1063/5.0242240
Published: January 2025
View articletitled, Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction
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Journal Articles

A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

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Heyuan Chen, Tao Zhang, Huake Su, Xiangdong Li, Shengrui Xu, Yachao Zhang, Ruowei Liu, Lei Xie, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012112 (2025)
https://doi.org/10.1063/5.0248171
Published: January 2025
View articletitled, A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity
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Journal Articles

The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes

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Jinyang Liu, Song He, Guangwei Xu, Weibing Hao, Xuanze Zhou, Zheyang Zheng, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012111 (2025)
https://doi.org/10.1063/5.0244107
Published: January 2025
View articletitled, The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes
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Journal Articles

Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes

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Makoto Kawano, Carlos Cunha, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012107 (2025)
https://doi.org/10.1063/5.0234753
Published: January 2025
View articletitled, Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes
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Journal Articles

Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors

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Sofie Vogt, Daniel Splith, Sebastian Köpp, Peter Schlupp, Clemens Petersen, Holger von Wenckstern, Marius Grundmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253507 (2024)
https://doi.org/10.1063/5.0220211
Published: December 2024
View articletitled, Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors
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