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Journal Articles
1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
Published: May 2025
Journal Articles
Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
Published: April 2025
Journal Articles
Demonstration of AlGaN/GaN HEMT-based non-classical optoelectronic logic inverter
Available to PurchaseRamit Kumar Mondal, Fuad Indra Alzakia, Ravikiran Lingaparthi, Nethaji Dharmarasu, K. Radhakrishnan, Munho Kim
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 172101 (2025)
Published: April 2025
Journal Articles
Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate
Available to PurchaseYahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 162105 (2025)
Published: April 2025
Journal Articles
Journal Articles
Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 152109 (2025)
Published: April 2025
Journal Articles
Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 152108 (2025)
Published: April 2025
Journal Articles
Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film
Available to PurchaseFengxin Liu, Qi Zhang, Yue Chen, Qiang Li, Xingye Zhang, Kang Gao, Kuan Kuang, Haohua Xu, Shiheng Liang, Chuansheng Liu, Mingkai Li, Yunbin He
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 153501 (2025)
Published: April 2025
Journal Articles
Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
Available to PurchaseQingru Wang, Yu Zhou, Xiaozhuang Lu, Xiaoning Zhan, Quan Dai, Jianxun Liu, Qian Li, Xinkun Zhang, Yamin Zhang, Qian Sun, Shiwei Feng, Zhihong Feng, Meixin Feng, Xin Chen, Hui Yang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 142102 (2025)
Published: April 2025
Journal Articles
Journal Articles
Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective
Sijie Bu, Yingzhe Wang, Xuefeng Zheng, Shaozhong Yue, Danmei Lin, Longbing Yi, Vazgen Melikyan, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 122104 (2025)
Published: March 2025
Journal Articles
710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage
Available to PurchaseXiufeng Song, Shenglei Zhao, Kui Dang, Longyang Yu, Menghan Zheng, Yixin Yao, Yachao Zhang, Zhihong Liu, Yue Hao, Jincheng Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 103501 (2025)
Published: March 2025
Journal Articles
Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension
Available to PurchaseQiuyan Li, Jinyang Liu, Weibing Hao, Xinrui Xu, Zhao Han, Song He, Xiaodong Xu, Guangwei Xu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 092102 (2025)
Published: March 2025
Journal Articles
The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 062110 (2025)
Published: February 2025
Journal Articles
3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
Available to PurchaseQingyuan Chang, Bin Hou, Ling Yang, Mao Jia, Youjun Zhu, Mei Wu, Meng Zhang, Qing Zhu, Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 062102 (2025)
Published: February 2025
Journal Articles
Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction
Available to PurchaseKesen Ding, Chunyang Bi, Yu Ao, Liyu Cheng, Hailong Fang, Yazhou Dong, Hongji Zhou, Xun Wang, Zhenpeng Zhang, Shixiong Liang, Sen Gong, Yaxin Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 031107 (2025)
Published: January 2025
Journal Articles
A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity
Available to PurchaseHeyuan Chen, Tao Zhang, Huake Su, Xiangdong Li, Shengrui Xu, Yachao Zhang, Ruowei Liu, Lei Xie, Yue Hao, Jincheng Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012112 (2025)
Published: January 2025
Journal Articles
The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012111 (2025)
Published: January 2025
Journal Articles
Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012107 (2025)
Published: January 2025
Journal Articles
Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors
Available to PurchaseSofie Vogt, Daniel Splith, Sebastian Köpp, Peter Schlupp, Clemens Petersen, Holger von Wenckstern, Marius Grundmann
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 253507 (2024)
Published: December 2024
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