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Journal Articles

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, J. Mateos

Appl. Phys. Lett. 123, 123503 (2023)

https://doi.org/10.1063/5.0167277

Published: September 2023

View article titled, Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Journal Articles

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga₂O₃ Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Sayleap Sdoeung, Yuto Otsubo, Kohei Sasaki, Akito Kuramata, Makoto Kasu

Appl. Phys. Lett. 123, 122101 (2023)

https://doi.org/10.1063/5.0170398

Published: September 2023

View article titled, Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga₂O₃ power diodes

Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long

Appl. Phys. Lett. 123, 112106 (2023)

https://doi.org/10.1063/5.0161934

Published: September 2023

View article titled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Journal Articles

Publisher's Note: “β-Ga₂O₃ trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123 , 023503 (2023)]

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan

Appl. Phys. Lett. 123, 109901 (2023)

https://doi.org/10.1063/5.0173754

Published: September 2023

View article titled, Publisher's Note: “β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123 , 023503 (2023)]

Journal Articles

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

M. Vivona, P. Fiorenza, V. Scuderi, F. La Via, F. Giannazzo, F. Roccaforte

Appl. Phys. Lett. 123, 072101 (2023)

https://doi.org/10.1063/5.0166042

Published: August 2023

View article titled, Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Includes: Supplementary data

Journal Articles

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

T. C. Hu, Z. P. Wang, N. Sun, H. H. Gong, X. X. Yu, F. F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 123, 013507 (2023)

https://doi.org/10.1063/5.0147251

Published: July 2023

View article titled, A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Includes: Supplementary data

Journal Articles

A single-layer efficient polarization-insensitive electromagnetic rectifying metasurface for wireless power transfer

Huai-Yu Wang, Fei Cheng, Chao Gu

Appl. Phys. Lett. 122, 261703 (2023)

https://doi.org/10.1063/5.0151839

Published: June 2023

View article titled, A single-layer efficient polarization-insensitive electromagnetic rectifying metasurface for wireless power transfer

Journal Articles

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

Appl. Phys. Lett. 122, 232105 (2023)

https://doi.org/10.1063/5.0155622

Published: June 2023

View article titled, Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Includes: Supplementary data

Journal Articles

Surface defects related to polishing cycle in ß-Ga₂O₃ crystals grown by floating zone

Coralie Perrier, Aboulaye Traoré, Toshimitsu Ito, Hitoshi Umezawa, Etienne Gheeraert, Philippe Ferrandis

Appl. Phys. Lett. 122, 222105 (2023)

https://doi.org/10.1063/5.0149969

Published: June 2023

View article titled, Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone

Journal Articles

Low-frequency noise in β-(Al_xGa₁_−x)₂O₃ Schottky barrier diodes

Subhajit Ghosh, Dinusha Herath Mudiyanselage, Sergey Rumyantsev, Yuji Zhao, Houqiang Fu, Stephen Goodnick, Robert Nemanich, Alexander A. Balandin

Appl. Phys. Lett. 122, 212109 (2023)

https://doi.org/10.1063/5.0153495

Published: May 2023

View article titled, Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes

Journal Articles

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

J. Smulko, K. Drozdowska, A. Rehman, T. Welearegay, L. Österlund, S. Rumyantsev, G. Cywiński, B. Stonio, A. Krajewska, M. Filipiak, P. Sai

Appl. Phys. Lett. 122, 211901 (2023)

https://doi.org/10.1063/5.0152456

Published: May 2023

View article titled, Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Journal Articles

Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Md Abu Jafar Rasel, Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

Appl. Phys. Lett. 122, 204101 (2023)

https://doi.org/10.1063/5.0140490

Published: May 2023

View article titled, Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Journal Articles

Scaled β-Ga₂O₃ thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f_MAX

Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti

Appl. Phys. Lett. 122, 182106 (2023)

https://doi.org/10.1063/5.0149062

Published: May 2023

View article titled, Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Includes: Supplementary data

Journal Articles

Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

Christian Dorfer, Marianne E. Bathen, Salvatore Race, Piyush Kumar, Alexander Tsibizov, Judith Woerle, Ulrike Grossner

Appl. Phys. Lett. 122, 183503 (2023)

https://doi.org/10.1063/5.0142217

Published: May 2023

View article titled, Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

Journal Articles

Effect of in-situ SiN_x grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Haochen Zhang, Yao Chen, Yue Sun, Lei Yang, Kunpeng Hu, Zhe Huang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Shiping Guo, Haiding Sun

Appl. Phys. Lett. 122, 173501 (2023)

https://doi.org/10.1063/5.0146447

Published: April 2023

View article titled, Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Journal Articles

Research on the β-Ga₂O₃ Schottky barrier diodes with oxygen-containing plasma treatment

Yun-Long He, Bai-Song Sheng, Yue-Hua Hong, Peng Liu, Xiao-Li Lu, Fang Zhang, Xi-Chen Wang, Yuan Li, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 122, 163503 (2023)

https://doi.org/10.1063/5.0145659

Published: April 2023

View article titled, Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Journal Articles

2.1 kV (001)- β -Ga₂O₃ vertical Schottky barrier diode with high-k oxide field plate

Saurav Roy, Arkka Bhattacharyya, Carl Peterson, Sriram Krishnamoorthy

Appl. Phys. Lett. 122, 152101 (2023)

https://doi.org/10.1063/5.0137935

Published: April 2023

View article titled, 2.1 kV (001)- β -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

Journal Articles

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano

Appl. Phys. Lett. 122, 142106 (2023)

https://doi.org/10.1063/5.0146080

Published: April 2023

View article titled, Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

Journal Articles

Surface transfer doped diamond diodes with metal oxide passivation and field-plate

Rebecca J. Watkins, Calum S. Henderson, Alexander C. Pakpour-Tabrizi, Richard B. Jackman

Appl. Phys. Lett. 122, 093503 (2023)

https://doi.org/10.1063/5.0128490

Published: February 2023

View article titled, Surface transfer doped diamond diodes with metal oxide passivation and field-plate

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Topics

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga₂O₃ Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga₂O₃ power diodes

Publisher's Note: “β-Ga₂O₃ trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123 , 023503 (2023)]

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode

A single-layer efficient polarization-insensitive electromagnetic rectifying metasurface for wireless power transfer

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Surface defects related to polishing cycle in ß-Ga₂O₃ crystals grown by floating zone

Low-frequency noise in β-(Al_xGa₁_−x)₂O₃ Schottky barrier diodes

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Scaled β-Ga₂O₃ thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f_MAX

Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

Effect of in-situ SiN_x grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Research on the β-Ga₂O₃ Schottky barrier diodes with oxygen-containing plasma treatment

2.1 kV (001)- β -Ga₂O₃ vertical Schottky barrier diode with high-k oxide field plate

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

Surface transfer doped diamond diodes with metal oxide passivation and field-plate

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