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Journal Articles

Ferroelectric polarization in nylon-3

Open Access
Saleem Anwar, Kamal Asadi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 231902 (2025)
https://doi.org/10.1063/5.0271044
Published: June 2025
View articletitled, Ferroelectric polarization in nylon-3
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Journal Articles

High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering

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Yefan Zhang, Xiaopeng Luo, Xiao Long, Peng Yang, Shihao Yu, Yang Liu, Zihao Hou, Wei Wu, Sen Liu, Zhiwei Li, Yi Sun, Qingjiang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132903 (2025)
https://doi.org/10.1063/5.0256127
Published: April 2025
View articletitled, High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
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Journal Articles

Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives

Editor’s PickOpen Access
M. Lederer, T. Kämpfe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 130503 (2025)
https://doi.org/10.1063/5.0254762
Published: March 2025
View articletitled, Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives
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Journal Articles

Influence of temperature on the avalanche dynamics of ferroelectric domain switching in barium titanate single crystals

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Yangyang Xu, Yumei Zhou, Yu Wang, Sen Yang, Dezhen Xue
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112903 (2025)
https://doi.org/10.1063/5.0246599
Published: March 2025
View articletitled, Influence of temperature on the avalanche dynamics of ferroelectric domain switching in barium titanate single crystals
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Journal Articles

Thermal budget study to simultaneously achieve low-temperature ( < 400  ° C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

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Jongmug Kang, Seongbin Park, Hye Ryeon Park, Seungbin Lee, Jin-Hyun Kim, Minjong Lee, Dushyant M. Narayan, Jeong Gyu Yoo, Geon Park, Harrison Sejoon Kim, Yong Chan Jung, Rino Choi, Jiyoung Kim, Si Joon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 102903 (2025)
https://doi.org/10.1063/5.0256712
Published: March 2025
View articletitled, Thermal budget study to simultaneously achieve low-temperature ( &lt; 400  ° C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films
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Journal Articles

Polarization dynamics of the ferroelectric hafnium zirconium oxide thin-film capacitor during the relaxation process

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Cheol Jun Kim, Minkyung Ku, Tae Hoon Kim, Taehee Noh, Minu Kang, Hyeon Su Seong, Seung Jin Kang, YoonChul Shin, Ji-Hoon Ahn, Bo Soo Kang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 102904 (2025)
https://doi.org/10.1063/5.0248629
Published: March 2025
View articletitled, Polarization dynamics of the ferroelectric hafnium zirconium oxide thin-film capacitor during the relaxation process
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Journal Articles

Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation

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Qinghang Liu, Deng Hu, Hang Gao, Zhiwei Wang, Qinsheng Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043104 (2025)
https://doi.org/10.1063/5.0240482
Published: January 2025
View articletitled, Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation
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Journal Articles

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing

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Jiefei Zhu, Changjian Zhou, Qi Liu, Min Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192903 (2024)
https://doi.org/10.1063/5.0219287
Published: November 2024
View articletitled, Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing
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Journal Articles

Reversal barrier and ferroelectric polarization of strained wurtzite Al1−xScxN ferroelectric alloys

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Yixin Xue, Dongsheng Cui, Mengyang Kang, Yifei Wang, Hong Zhang, Haidong Yuan, Xiangxiang Gao, Jie Su, Zhenhua Lin, Jinshui Miao, Jincheng Zhang, Yue Hao, Jingjing Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 152106 (2024)
https://doi.org/10.1063/5.0226521
Published: October 2024
View articletitled, Reversal barrier and ferroelectric polarization of strained wurtzite Al1−xScxN ferroelectric alloys
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Journal Articles

Hafnia-based neuromorphic devices

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Hai Zhong, Kuijuan Jin, Chen Ge
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150501 (2024)
https://doi.org/10.1063/5.0226206
Published: October 2024
View articletitled, Hafnia-based neuromorphic devices
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Journal Articles

Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

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Jie Lu, Zeyang Xiang, Kexiang Wang, Ziyu Wang, Si Shi, Zuming Liu, Xiran Chen, Xinyu Hu, Ran Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083508 (2024)
https://doi.org/10.1063/5.0224947
Published: August 2024
View articletitled, Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli
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Journal Articles

Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

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Zhenhong Liu, Kasidit Toprasertpong, Zuocheng Cai, Mitsuru Takenaka, Shinichi Takagi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 072904 (2024)
https://doi.org/10.1063/5.0212368
Published: August 2024
View articletitled, Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film
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Journal Articles

IP2 optimization in frequency mixers using ferroelectric field-effect transistors

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Cody Mitchell, Fat D. Ho
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062902 (2024)
https://doi.org/10.1063/5.0212255
Published: August 2024
View articletitled, IP2 optimization in frequency mixers using ferroelectric field-effect transistors
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Journal Articles

Effects of shear and bending strains on domain structures in freestanding ferroelectric thin films from phase-field simulations

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Changqing Guo, Jing Wang, Houbing Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062903 (2024)
https://doi.org/10.1063/5.0225448
Published: August 2024
View articletitled, Effects of shear and bending strains on domain structures in freestanding ferroelectric thin films from phase-field simulations
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Journal Articles

Ultralow electric-field poling of LiNbO3 single-crystal devices

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Di Hu, Xing Long Wang, Xian Yu Hu, Yi Ming Li, Jie Sun, An Quan Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032902 (2024)
https://doi.org/10.1063/5.0218674
Published: July 2024
View articletitled, Ultralow electric-field poling of LiNbO3 single-crystal devices
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Journal Articles

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films

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Xuepei Wang, Maokun Wu, Ting Zhang, Boyao Cui, Yu-Chun Li, Jinhao Liu, Yishan Wu, Yichen Wen, Sheng Ye, Pengpeng Ren, David Wei Zhang, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 232901 (2024)
https://doi.org/10.1063/5.0207775
Published: June 2024
View articletitled, Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films
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Journal Articles

Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration

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Hao Chen Fan, Bo Wen Shen, Wen Di Zhang, An Quan Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 112902 (2024)
https://doi.org/10.1063/5.0192965
Published: March 2024
View articletitled, Adjustable onset voltages of embedded LiNbO3 domain-wall selectors for large-scale memory integration
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Includes: Supplementary data
Journal Articles

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

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Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 033503 (2024)
https://doi.org/10.1063/5.0172204
Published: January 2024
View articletitled, Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
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Journal Articles

Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide

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Zhongshan Xu, Xiaona Zhu, Guo-Dong Zhao, David Wei Zhang, Shaofeng Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 012902 (2024)
https://doi.org/10.1063/5.0179879
Published: January 2024
View articletitled, Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide
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Journal Articles

An analytical interpretation of the memory window in ferroelectric field-effect transistors

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Sijung Yoo, Duk-Hyun Choe, Hyun Jae Lee, Sanghyun Jo, Yun Sung Lee, Yoonsang Park, Ki-Hong Kim, Donghoon Kim, Seung-Geol Nam
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 222902 (2023)
https://doi.org/10.1063/5.0168515
Published: November 2023
View articletitled, An analytical interpretation of the memory window in ferroelectric field-effect transistors
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