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Journal Articles

Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

Furat A. Al-Saymari, Adam P. Craig, Qi Lu, Laura A. Hanks, Andrew R. J. Marshall, Anthony Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 201103 (2023)
https://doi.org/10.1063/5.0174237
Published: November 2023
View article titled, Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 <em>μ</em>m
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Journal Articles

Atomic layer etching (ALE) of III-nitrides

Wan Ying Ho, Yi Chao Chow, Zachary Biegler, Kai Shek Qwah, Tanay Tak, Ashley Wissel-Garcia, Iris Liu, Feng Wu, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 062102 (2023)
https://doi.org/10.1063/5.0159048
Published: August 2023
View article titled, Atomic layer etching (ALE) of III-nitrides
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Journal Articles

Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies

Lei Li, Steve Reyes, Mohammad Javad Asadi, Patrick Fay, James C. M. Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 012105 (2023)
https://doi.org/10.1063/5.0148623
Published: July 2023
View article titled, Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies
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Includes: Supplementary data
Journal Articles

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

T. C. Hu, Z. P. Wang, N. Sun, H. H. Gong, X. X. Yu, F. F. Ren, Y. Yang, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 013507 (2023)
https://doi.org/10.1063/5.0147251
Published: July 2023
View article titled, A self-aligned Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky power diode
Open the PDF for A self-aligned Ga<sub>2</sub>O<sub>3</sub> heterojunction barrier Schottky power diode in another window
Includes: Supplementary data
Journal Articles

500 °C operation of β -Ga2O3 field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff. L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, Andrew J. Green
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243501 (2022)
https://doi.org/10.1063/5.0113744
Published: December 2022
View article titled, 500 °C operation of β -Ga<sub>2</sub>O<sub>3</sub> field-effect transistors
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Journal Articles

III-nitride vertical hot electron transistor with polarization doping and collimated injection

J. W. Daulton, R. J. Molnar, J. A. Brinkerhoff, M. A. Hollis, A. Zaslavsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 223503 (2022)
https://doi.org/10.1063/5.0129920
Published: November 2022
View article titled, III-nitride vertical hot electron transistor with polarization doping and collimated injection
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Journal Articles

Stacking two superconducting nanowire single-photon detectors via membrane microchip transfer

Shi Chen, Qing-Yuan Zhao, Kai Zheng, Xu Tao, Jia-Wei Guo, Zhen Liu, Hui Wang, Ling-Dong Kong, Hao Hao, Yang-Hui Huang, Tao Xu, Xue-Cou Tu, La-Bao Zhang, Xiao-Qing Jia, Jian Chen, Lin Kang, Pei-Heng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 112601 (2022)
https://doi.org/10.1063/5.0118213
Published: September 2022
View article titled, Stacking two superconducting nanowire single-photon detectors via membrane microchip transfer
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Journal Articles

β -Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 052102 (2022)
https://doi.org/10.1063/5.0096490
Published: August 2022
View article titled, β -Ga<sub>2</sub>O<sub>3</sub> FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
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Includes: Supplementary data
Journal Articles

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Yaqiang Liao, Tao Chen, Jia Wang, Wentao Cai, Yuto Ando, Xu Yang, Hirotaka Watanabe, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, Hiroshi Amano
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 122109 (2022)
https://doi.org/10.1063/5.0083194
Published: March 2022
View article titled, Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
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Includes: Supplementary data
Journal Articles

Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2

Chenlu Wang, Hong Zhou, Jincheng Zhang, Wenxiang Mu, Jie Wei, Zhitai Jia, Xuefeng Zheng, Xiaorong Luo, Xutang Tao, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 112101 (2022)
https://doi.org/10.1063/5.0084804
Published: March 2022
View article titled, Hysteresis-free and <em>μ</em>s-switching of D/E-modes Ga<sub>2</sub>O<sub>3</sub> hetero-junction FETs with the BV<sup>2</sup>/R<sub>on,sp</sub> of 0.74/0.28 GW/cm<sup>2</sup>
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Journal Articles

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Qinglong Yan, Hehe Gong,