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Journal Articles

Gallium nitride-based resonant tunneling diode oscillators

Editor’s Pick
Masahiro Murayama, Hisayoshi Motobayashi, Yukio Hoshina, Miwako Shoji, Yoshiro Takiguchi, Hiroyuki Miyahara, Takahiro Koyama, Noriyuki Futagawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 113503 (2024)
https://doi.org/10.1063/5.0225312
Published: September 2024
View article titled, Gallium nitride-based resonant tunneling diode oscillators
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Journal Articles

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 182102 (2024)
https://doi.org/10.1063/5.0187043
Published: May 2024
View article titled, Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
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Journal Articles

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

Zhongtao Zhu, Lina Cao, Adam Jönsson, Pengcheng Xu, Jinqiao Xie, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173509 (2024)
https://doi.org/10.1063/5.0202565
Published: April 2024
View article titled, Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes
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Journal Articles

Pressure-induced metallization and enhanced photoelectric activity in layered tin disulfide

Editor’s Pick
Yuyang Shi, Min Wu, Lei Yue, Kai Wang, Quanjun Li, Ye Wu, Gonglan Ye, Haijun Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 094103 (2024)
https://doi.org/10.1063/5.0187864
Published: February 2024
View article titled, Pressure-induced metallization and enhanced photoelectric activity in layered tin disulfide
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Includes: Supplementary data
Journal Articles

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Editor’s Pick
Fang Liu, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMao Li, RenJie Liu, Zhuang Guo, Kai Zhang, JinCheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 073501 (2024)
https://doi.org/10.1063/5.0180145
Published: February 2024
View article titled, Record peak current density of over 1500 kA/cm<sup>2</sup> in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates
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Journal Articles

Noise performance analysis of PT-symmetric non-reciprocal transmission systems

Lei Dong, Dong-Yan Chen, Yi Zhou, Qing-An Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 063507 (2024)
https://doi.org/10.1063/5.0187624
Published: February 2024
View article titled, Noise performance analysis of PT-symmetric non-reciprocal transmission systems
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Includes: Supplementary data
Journal Articles

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen, Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing Wang, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 092104 (2023)
https://doi.org/10.1063/5.0154841
Published: August 2023
View article titled, Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity
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Journal Articles

Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

Boyuan Chi, Leina Jiang, Yu Zhu, Lingling Tao, Xiufeng Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 053501 (2023)
https://doi.org/10.1063/5.0159999
Published: August 2023
View article titled, Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study
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Includes: Supplementary data
Journal Articles

Experimental study of the nonlinear distortion of non-reciprocal transmission in nonlinear parity-time symmetric LC resonators

Yi Zhou, Hao-Yan Wang, Li-Feng Wang, Lei Dong, Qing-An Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233301 (2023)
https://doi.org/10.1063/5.0147723
Published: June 2023
View article titled, Experimental study of the nonlinear distortion of non-reciprocal transmission in nonlinear parity-time symmetric <em>LC</em> resonators
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Includes: Supplementary data
Journal Articles

Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures

Dan-Na Liu, Sha-Sha Ke, Rui-Yang Yuan, Yong Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 213101 (2023)
https://doi.org/10.1063/5.0142343
Published: May 2023
View article titled, Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures
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Journal Articles

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152107 (2023)
https://doi.org/10.1063/5.0131988
Published: April 2023
View article titled, Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an <em>in situ</em> SiN/Al<sub>0.6</sub>Ga<sub>0.4</sub>N/GaN-on-Si metal-insulator high electron mobility transistor
Open the PDF for Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an <em>in situ</em> SiN/Al<sub>0.6</sub>Ga<sub>0.4</sub>N/GaN-on-Si metal-insulator high electron mobility transistor in another window
Journal Articles

Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing

Xiaomi Shen, Caihong Jia, Weifeng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 053501 (2023)
https://doi.org/10.1063/5.0137339
Published: January 2023
View article titled, Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing
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Journal Articles

Temperature characteristics of a thickness shear mode quartz crystal resonator bonded to a support substrate

Hajime Satani, Kuraudo Yasuda, Masayuki Sohgawa, Takashi Abe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 252903 (2022)
https://doi.org/10.1063/5.0132804
Published: December 2022
View article titled, Temperature characteristics of a thickness shear mode quartz crystal resonator bonded to a support substrate
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Journal Articles

Antenna-coupled microbolometer based on VO2's non-linear properties across the metal–insulator transition region

Shangyi Chen, Mark Lust, Nima Ghalichechian
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 201901 (2022)
https://doi.org/10.1063/5.0123779
Published: November 2022
View article titled, Antenna-coupled microbolometer based on VO<sub>2</sub>'s non-linear properties across the metal–insulator transition region
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Journal Articles

Flexible Hf O 2 -based ferroelectric memristor

I. Margolin, A. Chouprik, V. Mikheev, S. Zarubin, D. Negrov
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 102901 (2022)
https://doi.org/10.1063/5.0102290
Published: September 2022
View article titled, Flexible Hf O 2 -based ferroelectric memristor
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Includes: Supplementary data
Journal Articles

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Kai Fu, Ziyi He, Chen Yang, Jingan Zhou, Houqiang Fu, Yuji Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 092103 (2022)
https://doi.org/10.1063/5.0107677
Published: August 2022
View article titled, GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
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Journal Articles

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Hao Lu, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 173502 (2022)
https://doi.org/10.1063/5.0088585
Published: April 2022
View article titled, AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade
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Journal Articles

Single-crystalline LiNbO3 film based wideband SAW devices with spurious-free responses for future RF front-ends

Xingli He, Kai Chen, Linghui Kong, Peng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 113507 (2022)
https://doi.org/10.1063/5.0087735
Published: March 2022
View article titled, Single-crystalline LiNbO<sub>3</sub> film based wideband SAW devices with spurious-free responses for future RF front-ends
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Journal Articles

Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

Haibing Qiu, Xiangpeng Zhou, Wenxian Yang, Xue Zhang, Shan Jin, Shulong Lu, Hua Qin, Lifeng Bian
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 062108 (2021)
https://doi.org/10.1063/5.0061872
Published: August 2021
View article titled, Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN
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Journal Articles

Non-degenerate parametric mixing and Q-enhancement in ALN Lamb wave resonator

Ting Lu, Joseph D. Schneider, Sidhant Tiwari, Xiating Zou, Lap K. Yeung, Robert N. Candler, Gregory P. Carman, Yuanxun Ethan Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 254101 (2021)
https://doi.org/10.1063/5.0053818
Published: June 2021
View article titled, Non-degenerate parametric mixing and Q-enhancement in ALN Lamb wave resonator
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Includes: Supplementary data