1-20 of 20598
Electrical properties and parameters
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices

Available to Purchase
Chih-Yu Teng, Chia-Wei Hsu, Chia-Hua Chang, Jheng-Lin Yang, Bi-Hsuan Lin, Mau-Tsu Tang, Yuan-Chieh Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193502 (2025)
https://doi.org/10.1063/5.0266238
Published: May 2025
View articletitled, Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices
Open the PDF for Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices in another window
Journal Articles

Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer

Available to Purchase
Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
https://doi.org/10.1063/5.0252761
Published: May 2025
View articletitled, Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
Open the PDF for Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer in another window
Journal Articles

High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer

Open Access
Mritunjay Kumar, Vishal Khandelwal, Dhanu Chettri, Ganesh Mainali, Glen Isaac Maciel García, Zuojian Pan, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193505 (2025)
https://doi.org/10.1063/5.0263220
Published: May 2025
View articletitled, High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Open the PDF for High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer in another window
Journal Articles

Carrier mobility and transport mechanism in single-walled carbon nanotube (SWCNT) random network studied using impedance spectroscopy

Available to Purchase
Manoranjan, Y. N. Mohapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192104 (2025)
https://doi.org/10.1063/5.0267473
Published: May 2025
View articletitled, Carrier mobility and transport mechanism in single-walled carbon nanotube (SWCNT) random network studied using impedance spectroscopy
Open the PDF for Carrier mobility and transport mechanism in single-walled carbon nanotube (SWCNT) random network studied using impedance spectroscopy in another window
Journal Articles

Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature

Available to Purchase
Hongchen Meng, Xiaoyuan Wu, Guanfa Zhong, Lang Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193904 (2025)
https://doi.org/10.1063/5.0268989
Published: May 2025
View articletitled, Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature
Open the PDF for Optimization of HWCVD-grown i-a-Si:H films through synergistic adjustment of hydrogen dilution ratio and hot-wire temperature in another window
Journal Articles

Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor

Editor’s PickAvailable to Purchase
Jinwei Hu, Bosen Wang, Xingyun Li, Ming Yuwen, Bo Zhang, Lianying Zhu, Jun Xu, Deyi Fu, Rong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193101 (2025)
https://doi.org/10.1063/5.0260965
Published: May 2025
View articletitled, Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor
Open the PDF for Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor in another window
Journal Articles

A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure

Available to Purchase
Caizhen Su, Haojie Zhao, Jiawen Yan, Yixuan Zou, Peng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193501 (2025)
https://doi.org/10.1063/5.0268935
Published: May 2025
View articletitled, A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure
Open the PDF for A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure in another window
Journal Articles

Sub-micron aperture VCSEL demonstrates ultralow ITH  =  0.05 mA and energy/bit  =  45.5 fJ/bit at 3 Kelvin

Available to Purchase
Haonan Wu, Derek Chaw, Zetai Liu, Yulin He, Milton Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181104 (2025)
https://doi.org/10.1063/5.0269543
Published: May 2025
View articletitled, Sub-micron aperture VCSEL demonstrates ultralow ITH  =  0.05 mA and energy/bit  =  45.5 fJ/bit at 3 Kelvin
Open the PDF for Sub-micron aperture VCSEL demonstrates ultralow ITH  =  0.05 mA and energy/bit  =  45.5 fJ/bit at 3 Kelvin in another window
Journal Articles

Strain engineering for magnetoelectric coupling in flexible composite devices

Available to Purchase
Guixin He, Yaoxiang Jiang, Tengfei Ma, Jianguo Niu, Yulong Bai, Ning Jiang, Hong Chang, Shifeng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182901 (2025)
https://doi.org/10.1063/5.0271826
Published: May 2025
View articletitled, Strain engineering for magnetoelectric coupling in flexible composite devices
Open the PDF for Strain engineering for magnetoelectric coupling in flexible composite devices in another window
Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

Available to Purchase
Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View articletitled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
Open the PDF for 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study in another window
Journal Articles

Power enhancement in two-dimensional resonant-tunneling-diode terahertz oscillator arrays with staggered arrangement

Available to Purchase
Z. Tang, S. Suzuki
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182103 (2025)
https://doi.org/10.1063/5.0265608
Published: May 2025
View articletitled, Power enhancement in two-dimensional resonant-tunneling-diode terahertz oscillator arrays with staggered arrangement
Open the PDF for Power enhancement in two-dimensional resonant-tunneling-diode terahertz oscillator arrays with staggered arrangement in another window
Journal Articles

Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE

Available to Purchase
Frank P. Kelly, Matthew M. Landi, Kyekyoon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
https://doi.org/10.1063/5.0260105
Published: April 2025
View articletitled, Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
Open the PDF for Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE in another window
Journal Articles

Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing

Available to Purchase
Mingsheng Fang, Yan Liu, Ting Zhang, Dandan Wang, Zhihong Mai, Guozhong Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 173504 (2025)
https://doi.org/10.1063/5.0259120
Published: April 2025
View articletitled, Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing
Open the PDF for Anatomy of internal electric field profile in operating SiC power MOSFETs with local contact potential probing in another window
Journal Articles

Plasmon-enhanced Ag/Sb2Te3 quantum dots fluorescence

Editor’s PickAvailable to Purchase
Zhiyong Yu, Zhenhua Wu, Boyuan Cai, Khay Way See, Mengjun Li, Jinming Hu, Yinan Zhang, Min Gu, Zengji Yue
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171103 (2025)
https://doi.org/10.1063/5.0256795
Published: April 2025
View articletitled, Plasmon-enhanced Ag/Sb2Te3 quantum dots fluorescence
Open the PDF for Plasmon-enhanced Ag/Sb2Te3 quantum dots fluorescence in another window
Journal Articles

Highly stable InZnSnTbOX thin-film transistors

Available to Purchase
Yan Wang, Penghui He, Shiyue Zuo, Yu Song, Lin Tang, Ruohao Hong, Guoli Li, Lei Liao, Xuming Zou, Xingqiang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 173501 (2025)
https://doi.org/10.1063/5.0255013
Published: April 2025
View articletitled, Highly stable InZnSnTbOX thin-film transistors
Open the PDF for Highly stable InZnSnTbOX thin-film transistors in another window
Journal Articles

Giant enhancement of the transverse magneto-optical Kerr effect in etchless bismuth iron garnet empowered by quasi-bound states in the continuum

Available to Purchase
Qin Tang, Dandan Zhang, Shuyuan Xiao, Meibao Qin, Jizhou He, Tingting Liu, Qinghua Liao, Tianbao Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171701 (2025)
https://doi.org/10.1063/5.0260200
Published: April 2025
View articletitled, Giant enhancement of the transverse magneto-optical Kerr effect in etchless bismuth iron garnet empowered by quasi-bound states in the continuum
Open the PDF for Giant enhancement of the transverse magneto-optical Kerr effect in etchless bismuth iron garnet empowered by quasi-bound states in the continuum in another window
Journal Articles

Transparent and flexible electromagnetic interference shielding thin film based on sulfurized copper iodide

Available to Purchase
Xiaowan Kang, Xiaojian Chen, Jialin Yang, Junliang Zhao, Chang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 161104 (2025)
https://doi.org/10.1063/5.0267198
Published: April 2025
View articletitled, Transparent and flexible electromagnetic interference shielding thin film based on sulfurized copper iodide
Open the PDF for Transparent and flexible electromagnetic interference shielding thin film based on sulfurized copper iodide in another window
Journal Articles

Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate

Available to Purchase
Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162105 (2025)
https://doi.org/10.1063/5.0268847
Published: April 2025
View articletitled, Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate
Open the PDF for Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate in another window
Journal Articles

Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions

Editor’s PickAvailable to Purchase
Xueyan Bai, Daifeng Zou, Chihou Lei, Zhijian He, Yunya Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162902 (2025)
https://doi.org/10.1063/5.0258003
Published: April 2025
View articletitled, Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions
Open the PDF for Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions in another window
Journal Articles

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

Available to Purchase
Hao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 163503 (2025)
https://doi.org/10.1063/5.0253093
Published: April 2025
View articletitled, 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Open the PDF for 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect in another window