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Journal Articles

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

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Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 111604 (2025)
https://doi.org/10.1063/5.0252966
Published: March 2025
View articletitled, Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
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Journal Articles

An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance

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Xiang Du, Min-Han Mi, Peng-Fei Wang, Mao-Teng Lu, Yu-Wei Zhou, Can Gong, Xiao-Ping Ouyang, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 073501 (2025)
https://doi.org/10.1063/5.0245073
Published: February 2025
View articletitled, An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance
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Journal Articles

BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures

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Ying Xu, Yiyuan Sun, Zijie Zheng, Yuxuan Wang, Yuye Kang, Kaizhen Han, Xuanqi Chen, Gerui Zheng, Xiao Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 033502 (2025)
https://doi.org/10.1063/5.0243792
Published: January 2025
View articletitled, BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures
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Journal Articles

Very low subthreshold swing normally-off diamond FET and its logic inverters

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Yuesong Liang, Wei Wang, Tianlin Niu, Genqiang Chen, Fei Wang, Shi He, Minghui Zhang, Yanfeng Wang, Feng Wen, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 263501 (2024)
https://doi.org/10.1063/5.0221365
Published: December 2024
View articletitled, Very low subthreshold swing normally-off diamond FET and its logic inverters
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Journal Articles

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

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Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 202105 (2024)
https://doi.org/10.1063/5.0222095
Published: November 2024
View articletitled, Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs
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Journal Articles

Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

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Beibei Lv, Lixing Zhang, Jiongjiong Mo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 153502 (2024)
https://doi.org/10.1063/5.0230452
Published: October 2024
View articletitled, Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process
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Journal Articles

Pseudo-source gated beta-gallium oxide MOSFET

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Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Mritunjay Kumar, Glen Isaac Maciel García, Zhiyuan Liu, Na Xiao, Jose Manuel Taboada Vasquez, Xiao Tang, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142104 (2024)
https://doi.org/10.1063/5.0231763
Published: October 2024
View articletitled, Pseudo-source gated beta-gallium oxide MOSFET
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Journal Articles

Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

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Xin Luo, Peng Cui, Handoko Linewih, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 122109 (2024)
https://doi.org/10.1063/5.0224144
Published: September 2024
View articletitled, Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
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Journal Articles

The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer

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Xuan Su, Ling Yang, Meng Zhang, Qing Zhu, Wenze Gao, Wei Zhao, Qian Yu, Qingyuan Chang, Hao Lu, Chunzhou Shi, Bin Hou, Mei Wu, Sheng Wu, Gang Qiu, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102105 (2024)
https://doi.org/10.1063/5.0219265
Published: September 2024
View articletitled, The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
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Journal Articles

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown

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Chinmoy Nath Saha, Abhishek Vaidya, Noor Jahan Nipu, Lingyu Meng, Dong Su Yu, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062101 (2024)
https://doi.org/10.1063/5.0208580
Published: August 2024
View articletitled, Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown
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Journal Articles

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

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Yi-Lin Chen, Qing Zhu, Meng Zhang, Min-Han Mi, Jie-Jie Zhu, Si-Yin Guo, Yu-Wei Zhou, Peng-Fei Wang, Can Gong, Zi-Yue Zhao, Xiao-Hua Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 063502 (2024)
https://doi.org/10.1063/5.0209130
Published: August 2024
View articletitled, On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls
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Journal Articles

Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates

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Xiaoqi Cui, Sunmean Kim, Faisal Ahmed, Mingde Du, Andreas C. Liapis, Juan Arias Muñoz, Abde Mayeen Shafi, Md Gius Uddin, Fida Ali, Yi Zhang, Dong-Ho Kang, Harri Lipsanen, Seokhyeong Kang, Hoon Hahn Yoon, Zhipei Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 051105 (2024)
https://doi.org/10.1063/5.0218591
Published: July 2024
View articletitled, Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates
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Journal Articles

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

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Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023504 (2024)
https://doi.org/10.1063/5.0219359
Published: July 2024
View articletitled, Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
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Journal Articles

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  ° C by MOVPE

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Charles Pitaval, Sébastien Aroulanda, Yassine Fouzi, Nicolas Defrance, Cédric Lacam, Nicolas Michel, Nadia El Bondry, Mourad Oualli, Laurent Teisseire, Jean-Claude Jacquet, Stéphane Piotrowicz, Christophe Gaquiere, Sylvain L. Delage
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 012108 (2024)
https://doi.org/10.1063/5.0214563
Published: July 2024
View articletitled, InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  ° C by MOVPE
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Journal Articles

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

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D. Lidsky, C. R. Allemang, T. Hutchins-Delgado, A. R. James, P. Allen, M. Saleh Ziabari, P. Sharma, A. M. Bradicich, W. C.-H. Kuo, S. D. House, T. M. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233503 (2024)
https://doi.org/10.1063/5.0199583
Published: June 2024
View articletitled, Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
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Journal Articles

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

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Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 182102 (2024)
https://doi.org/10.1063/5.0187043
Published: May 2024
View articletitled, Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
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Journal Articles

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

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Mingyan Wang, Heng Zhou, Chao Liu, Zhaojun Lin, Yuping Zeng, Peng Cui
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152101 (2024)
https://doi.org/10.1063/5.0196746
Published: April 2024
View articletitled, Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs
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Journal Articles

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

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JiaQi He, PeiRan Wang, FangZhou Du, KangYao Wen, Yang Jiang, ChuYing Tang, ChenKai Deng, MuJun Li, QiaoYu Hu, Nick Tao, Peng Xiang, Kai Cheng, Qing Wang, Gang Li, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 132104 (2024)
https://doi.org/10.1063/5.0193734
Published: March 2024
View articletitled, Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
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Journal Articles

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

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Dahyun Choi, Minji Chae, Yeongseo Han, Min-Kyu Joo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093504 (2024)
https://doi.org/10.1063/5.0176208
Published: February 2024
View articletitled, Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers
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Includes: Supplementary data
Journal Articles

Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

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J. W. Liu, T. Teraji, B. Da, Y. Koide
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 072103 (2024)
https://doi.org/10.1063/5.0194424
Published: February 2024
View articletitled, Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
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