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Journal Articles

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

R. Behrle, M. Sistani, A. Lugstein, Z. Sadre Momtaz, M. I. den Hertog, D. Pogany, W. M. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 243504 (2023)
https://doi.org/10.1063/5.0147208
Published: June 2023
View article titled, Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors
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Journal Articles

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 232107 (2023)
https://doi.org/10.1063/5.0135074
Published: June 2023
View article titled, Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiN<sub>x</sub> stressor passivation
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Journal Articles

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

A. Papamichail, A. R. Persson, S. Richter, P. Kühne, V. Stanishev, P. O. Å. Persson, R. Ferrand-Drake Del Castillo, M. Thorsell, H. Hjelmgren, P. P. Paskov, N. Rorsman, V. Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 153501 (2023)
https://doi.org/10.1063/5.0141517
Published: April 2023
View article titled, Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
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Includes: Supplementary data
Journal Articles

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Yachao Zhang, Yaolong Dong, Kai Chen, Kui Dang, Yixin Yao, Baiqi Wang, Jinbang Ma, Wenjun Liu, Xing Wang, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 142105 (2023)
https://doi.org/10.1063/5.0134633
Published: April 2023
View article titled, High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
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Journal Articles

Demonstration of self-aligned β -Ga2O3  δ -doped MOSFETs with current density >550 mA/mm

Nidhin Kurian Kalarickal, Ashok Dheenan, Joe F. McGlone, Sushovan Dhara, Mark Brenner, Steven A. Ringel, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 113506 (2023)
https://doi.org/10.1063/5.0131996
Published: March 2023
View article titled, Demonstration of self-aligned β -Ga<sub>2</sub>O<sub>3</sub>  δ -doped MOSFETs with current density &gt;550 mA/mm
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Includes: Supplementary data
Journal Articles

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092104 (2023)
https://doi.org/10.1063/5.0138939
Published: March 2023
View article titled, N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
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Journal Articles

500 °C operation of β -Ga2O3 field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff. L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, Andrew J. Green
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243501 (2022)
https://doi.org/10.1063/5.0113744
Published: December 2022
View article titled, 500 °C operation of β -Ga<sub>2</sub>O<sub>3</sub> field-effect transistors
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Journal Articles

High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel

Qianlan Hu, Shenwu Zhu, Chengru Gu, Yanqing Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 242101 (2022)
https://doi.org/10.1063/5.0128781
Published: December 2022
View article titled, High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel
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Journal Articles

Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors

Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233502 (2022)
https://doi.org/10.1063/5.0125481
Published: December 2022
View article titled, Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors
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Journal Articles

Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric

Jianing Su, Genqiang Chen, Wei Wang, Han Shi, Shi He, Xiaoyong Lv, Yanfeng Wang, Minghui Zhang, Ruozheng Wang, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 162103 (2022)
https://doi.org/10.1063/5.0119899
Published: October 2022
View article titled, Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric
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Journal Articles

III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential

Patrick Fay, Jeong-Sun Moon, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 140502 (2022)
https://doi.org/10.1063/5.0110860
Published: October 2022
View article titled, III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential
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Journal Articles

An automated approach for consecutive tuning of quantum dot arrays

Hanwei Liu, Baochuan Wang, Ning Wang, Zhonghai Sun, Huili Yin, Haiou Li, Gang Cao, Guoping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 084002 (2022)
https://doi.org/10.1063/5.0111128
Published: August 2022
View article titled, An automated approach for consecutive tuning of quantum dot arrays
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Includes: Supplementary data
Journal Articles

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072110 (2022)
https://doi.org/10.1063/5.0096542
Published: August 2022
View article titled, Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications
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Journal Articles

High transconductance and current density in field effect transistors using arrays of bundled semiconducting carbon nanotubes

Sean M. Foradori, Jonathan H. Dwyer, Anjali Suresh, Padma Gopalan, Michael S. Arnold
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 073504 (2022)
https://doi.org/10.1063/5.0093859
Published: August 2022
View article titled, High transconductance and current density in field effect transistors using arrays of bundled semiconducting carbon nanotubes
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Includes: Supplementary data
Journal Articles

RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Xinxin Yu, Hehe Gong, Jianjun Zhou, Zhenghao Shen, Fang-fang Ren, Dunjun Chen, Xin Ou, Yuechan Kong, Zhonghui Li, Tangsheng Chen, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072102 (2022)
https://doi.org/10.1063/5.0098610
Published: August 2022
View article titled, RF performance enhancement in sub-<em>μ</em>m scaled β-Ga<sub>2</sub>O<sub>3</sub> tri-gate FinFETs
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Journal Articles

Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection

Dong-Wook Park, Gene Tsvid, Juan P. Hernandez-Ortiz, David C. Schwartz, Zhenqiang Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 192102 (2022)
https://doi.org/10.1063/5.0084758
Published: May 2022
View article titled, Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection
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Includes: Supplementary data
Journal Articles

Solution-processed tin oxide thin film for normally-off hydrogen terminated diamond field effect transistor

Shi He, Genqiang Chen, Xinxin Han, Wei Wang, Xiaohui Chang, Qi Li, Qianwen Zhang, Yan-Feng Wang, Minghui Zhang, Tianfei Zhu, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 132102 (2022)
https://doi.org/10.1063/5.0085935
Published: March 2022
View article titled, Solution-processed tin oxide thin film for normally-off hydrogen terminated diamond field effect transistor
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Journal Articles

Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs

Md Abu Jafar Rasel, Sergei P. Stepanoff, Maxwell Wetherington, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 124101 (2022)
https://doi.org/10.1063/5.0087209
Published: March 2022
View article titled, Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs
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Journal Articles

Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications

Hansheng Ye, Mikhail Gaevski, Grigory Simin, Asif Khan, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 103505 (2022)
https://doi.org/10.1063/5.0084022
Published: March 2022
View article titled, Electron mobility and velocity in Al<sub>0.45</sub>Ga<sub>0.55</sub>N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications
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Journal Articles

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Jia-Lin Zhang, Peng Ding, Bo Mei, Sheng-Hao Meng, Chen Zhang, Liu-Hong Ma, Zhi Jin, Yi Sun, Hai-Ming Zhang, Ying-Hui Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 103501 (2022)
https://doi.org/10.1063/5.0084257
Published: March 2022
View article titled, The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors
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