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Journal Articles
Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 111604 (2025)
Published: March 2025
Journal Articles
An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance
Available to PurchaseXiang Du, Min-Han Mi, Peng-Fei Wang, Mao-Teng Lu, Yu-Wei Zhou, Can Gong, Xiao-Ping Ouyang, Xiao-Hua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 073501 (2025)
Published: February 2025
Journal Articles
BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures
Ying Xu, Yiyuan Sun, Zijie Zheng, Yuxuan Wang, Yuye Kang, Kaizhen Han, Xuanqi Chen, Gerui Zheng, Xiao Gong
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 033502 (2025)
Published: January 2025
Journal Articles
Very low subthreshold swing normally-off diamond FET and its logic inverters
Available to PurchaseYuesong Liang, Wei Wang, Tianlin Niu, Genqiang Chen, Fei Wang, Shi He, Minghui Zhang, Yanfeng Wang, Feng Wen, Hong-Xing Wang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 263501 (2024)
Published: December 2024
Journal Articles
Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 202105 (2024)
Published: November 2024
Journal Articles
Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 153502 (2024)
Published: October 2024
Journal Articles
Pseudo-source gated beta-gallium oxide MOSFET
Open AccessGanesh Mainali, Dhanu Chettri, Vishal Khandelwal, Mritunjay Kumar, Glen Isaac Maciel García, Zhiyuan Liu, Na Xiao, Jose Manuel Taboada Vasquez, Xiao Tang, Xiaohang Li
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 142104 (2024)
Published: October 2024
Journal Articles
Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Available to PurchaseXin Luo, Peng Cui, Handoko Linewih, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 122109 (2024)
Published: September 2024
Journal Articles
The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
Available to PurchaseXuan Su, Ling Yang, Meng Zhang, Qing Zhu, Wenze Gao, Wei Zhao, Qian Yu, Qingyuan Chang, Hao Lu, Chunzhou Shi, Bin Hou, Mei Wu, Sheng Wu, Gang Qiu, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 102105 (2024)
Published: September 2024
Journal Articles
Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown
Available to PurchaseChinmoy Nath Saha, Abhishek Vaidya, Noor Jahan Nipu, Lingyu Meng, Dong Su Yu, Hongping Zhao, Uttam Singisetti
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 062101 (2024)
Published: August 2024
Journal Articles
On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls
Available to PurchaseYi-Lin Chen, Qing Zhu, Meng Zhang, Min-Han Mi, Jie-Jie Zhu, Si-Yin Guo, Yu-Wei Zhou, Peng-Fei Wang, Can Gong, Zi-Yue Zhao, Xiao-Hua Ma
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 063502 (2024)
Published: August 2024
Journal Articles
Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates
Available to PurchaseXiaoqi Cui, Sunmean Kim, Faisal Ahmed, Mingde Du, Andreas C. Liapis, Juan Arias Muñoz, Abde Mayeen Shafi, Md Gius Uddin, Fida Ali, Yi Zhang, Dong-Ho Kang, Harri Lipsanen, Seokhyeong Kang, Hoon Hahn Yoon, Zhipei Sun
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 051105 (2024)
Published: July 2024
Journal Articles
Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 023504 (2024)
Published: July 2024
Journal Articles
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 ° C by MOVPE
Available to PurchaseCharles Pitaval, Sébastien Aroulanda, Yassine Fouzi, Nicolas Defrance, Cédric Lacam, Nicolas Michel, Nadia El Bondry, Mourad Oualli, Laurent Teisseire, Jean-Claude Jacquet, Stéphane Piotrowicz, Christophe Gaquiere, Sylvain L. Delage
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 012108 (2024)
Published: July 2024
Journal Articles
Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
Available to PurchaseD. Lidsky, C. R. Allemang, T. Hutchins-Delgado, A. R. James, P. Allen, M. Saleh Ziabari, P. Sharma, A. M. Bradicich, W. C.-H. Kuo, S. D. House, T. M. Lu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 233503 (2024)
Published: June 2024
Journal Articles
Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 182102 (2024)
Published: May 2024
Journal Articles
Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 152101 (2024)
Published: April 2024
Journal Articles
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
Available to PurchaseJiaQi He, PeiRan Wang, FangZhou Du, KangYao Wen, Yang Jiang, ChuYing Tang, ChenKai Deng, MuJun Li, QiaoYu Hu, Nick Tao, Peng Xiang, Kai Cheng, Qing Wang, Gang Li, HongYu Yu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 132104 (2024)
Published: March 2024
Journal Articles
Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 093504 (2024)
Published: February 2024
Includes: Supplementary data
Journal Articles
Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 072103 (2024)
Published: February 2024
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