1-20 of 578
Contact impedance
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, Noor Jahan Nipu, Lingyu Meng, Dong Su Yu, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062101 (2024)
https://doi.org/10.1063/5.0208580
Published: August 2024
View article titled, Thin channel Ga<sub>2</sub>O<sub>3</sub> MOSFET with 55 GHz f<sub>MAX</sub> and &gt; 100 V breakdown
Open the PDF for Thin channel Ga<sub>2</sub>O<sub>3</sub> MOSFET with 55 GHz f<sub>MAX</sub> and > 100 V breakdown in another window
Journal Articles

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Satish Shetty, Andrian V. Kuchuk, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Ayesha Hassan, Savannah R. Eisner, Nirosh M. Eldose, Dinesh Baral, Yuriy I Mazur, David Huitink, Debbie G. Senesky, H Alan Mantooth, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042105 (2024)
https://doi.org/10.1063/5.0213310
Published: July 2024
View article titled, Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
Open the PDF for Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors in another window
Journal Articles

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  ° C by MOVPE

Charles Pitaval, Sébastien Aroulanda, Yassine Fouzi, Nicolas Defrance, Cédric Lacam, Nicolas Michel, Nadia El Bondry, Mourad Oualli, Laurent Teisseire, Jean-Claude Jacquet, Stéphane Piotrowicz, Christophe Gaquiere, Sylvain L. Delage
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 012108 (2024)
https://doi.org/10.1063/5.0214563
Published: July 2024
View article titled, InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  ° C by MOVPE
Open the PDF for InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  ° C by MOVPE in another window
Journal Articles

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, Nadim Chowdhury
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 243501 (2024)
https://doi.org/10.1063/5.0203344
Published: June 2024
View article titled, Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
Open the PDF for Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure in another window
Journal Articles

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 202103 (2024)
https://doi.org/10.1063/5.0191297
Published: May 2024
View article titled, High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
Open the PDF for High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C in another window
Journal Articles

Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn2S4 semiconductor for below-bandgap photodetection

Rui Wang, Wen-Zhu Shao, Yue Liu, Bo Xu, Zhao-Yuan Sun, Hui Li, Chang-Jin Zhang, Cheng-Yan Xu, Yang Li, Liang Zhen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181102 (2024)
https://doi.org/10.1063/5.0199440
Published: April 2024
View article titled, Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn<sub>2</sub>S<sub>4</sub> semiconductor for below-bandgap photodetection
Open the PDF for Charge transport and extrinsic absorption of two-dimensional defect-rich ZnIn<sub>2</sub>S<sub>4</sub> semiconductor for below-bandgap photodetection in another window
Includes: Supplementary data
Journal Articles

Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K

Yayi Chen, Xingji Liu, Yuan Liu, Rongsheng Chen, Jianfeng Zhang, Mingchao Wu, Hoi-Sing Kwok, Wei Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173507 (2024)
https://doi.org/10.1063/5.0204316
Published: April 2024
View article titled, Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K
Open the PDF for Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K in another window
Journal Articles

Exploring the influence of the contact resistance on perovskite phototransistors

Lijian Chen, Quanhua Chen, Hong Zhu, Runfeng Wang, Yiping Wu, Run Li, Li Zhu, Guangan Yang, Xiang Wan, Xing Zhao, Zhihao Yu, Binhong Li, Chee Leong Tan, Huabin Sun, Yong Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 162202 (2024)
https://doi.org/10.1063/5.0190100
Published: April 2024
View article titled, Exploring the influence of the contact resistance on perovskite phototransistors
Open the PDF for Exploring the influence of the contact resistance on perovskite phototransistors in another window
Includes: Supplementary data
Journal Articles

Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations

Dongho Choi, Sanghoon Park, Hanul Moon, Seunghyup Yoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142102 (2024)
https://doi.org/10.1063/5.0185330
Published: April 2024
View article titled, Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations
Open the PDF for Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations in another window
Journal Articles

Enhanced linear polarization of GaN-based Micro-LED via rational chip sidewall engineering

Huming Zhan, Peng Cao, Jinpeng Huang, Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Jinmin Li, Liancheng Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 113501 (2024)
https://doi.org/10.1063/5.0193987
Published: March 2024
View article titled, Enhanced linear polarization of GaN-based Micro-LED via rational chip sidewall engineering
Open the PDF for Enhanced linear polarization of GaN-based Micro-LED via rational chip sidewall engineering in another window
Includes: Supplementary data
Journal Articles

Non-alloyed ohmic contacts to (010) β -Ga2O3 with low contact resistance

Kathleen T. Smith, Cameron A. Gorsak, Avijit Kalra, Bennett J. Cromer, Kathy Azizie, Daniel M. Dryden, Darrell G. Schlom, Debdeep Jena, Hari P. Nair, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 242101 (2023)
https://doi.org/10.1063/5.0177618
Published: December 2023
View article titled, Non-alloyed ohmic contacts to (010) <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> with low contact resistance
Open the PDF for Non-alloyed ohmic contacts to (010) <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> with low contact resistance in another window
Includes: Supplementary data
Journal Articles

Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Valentin Garbe, Sarah Seidel, Alexander Schmid, Ulrich Bläß, Elke Meissner, Johannes Heitmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 203506 (2023)
https://doi.org/10.1063/5.0171168
Published: November 2023
View article titled, Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs
Open the PDF for Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs in another window
Journal Articles

Atomic layer etching (ALE) of III-nitrides

Wan Ying Ho, Yi Chao Chow, Zachary Biegler, Kai Shek Qwah, Tanay Tak, Ashley Wissel-Garcia, Iris Liu, Feng Wu, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 062102 (2023)
https://doi.org/10.1063/5.0159048
Published: August 2023
View article titled, Atomic layer etching (ALE) of III-nitrides
Open the PDF for Atomic layer etching (ALE) of III-nitrides in another window
Journal Articles

Controllable nitrogen doping of MOCVD Ga2O3 using NH3

Fikadu Alema, Takeki Itoh, William Brand, Andrei Osinsky, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 252105 (2023)
https://doi.org/10.1063/5.0149248
Published: June 2023
View article titled, Controllable nitrogen doping of MOCVD Ga<sub>2</sub>O<sub>3</sub> using NH<sub>3</sub>
Open the PDF for Controllable nitrogen doping of MOCVD Ga<sub>2</sub>O<sub>3</sub> using NH<sub>3</sub> in another window
Journal Articles

Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration

Ke Sun, Yinzuo Qian, Zhenxing Lv, Shengli Qi, Shengjun Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 202104 (2023)
https://doi.org/10.1063/5.0148796
Published: May 2023
View article titled, Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration
Open the PDF for Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration in another window
Journal Articles

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 182106 (2023)
https://doi.org/10.1063/5.0149062
Published: May 2023
View article titled, Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub>
Open the PDF for Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub> in another window
Includes: Supplementary data
Journal Articles

Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Vishank Talesara, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hongping Zhao, Wu Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123501 (2023)
https://doi.org/10.1063/5.0135313
Published: March 2023
View article titled, Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm<sup>2</sup>
Open the PDF for Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm<sup>2</sup> in another window
Journal Articles

Tailoring Bi2Sr2CaCu2O8 +δ surface Josephson junctions

Editor’s Pick
Zihan Wei, Hongmei Du, Dingding Li, Mei Ping Jiang, Ping Zhang, Shixian Chen, Yang-Yang Lyu, Hancong Sun, Yong-Lei Wang, Dieter Koelle, Reinhold Kleiner, Huabing Wang, Peiheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 112601 (2023)
https://doi.org/10.1063/5.0143266
Published: March 2023
View article titled, Tailoring Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8 +<em>δ</em> </sub> surface Josephson junctions
Open the PDF for Tailoring Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8 +<em>δ</em> </sub> surface Josephson junctions in another window
Includes: Supplementary data
Journal Articles

Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve

A. Spiesser, R. Jansen, H. Saito, S. Yuasa
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062407 (2023)
https://doi.org/10.1063/5.0137482
Published: February 2023
View article titled, Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve
Open the PDF for Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve in another window
Includes: Supplementary data
Journal Articles

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Haoran Qie, Jianxun Liu, Qian li, Qian Sun, Hongwei Gao, Xiujian Sun, Yu Zhou, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 212106 (2022)
https://doi.org/10.1063/5.0129997
Published: November 2022
View article titled, Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD
Open the PDF for Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD in another window