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Journal Articles

Ultrahigh breakdown current density of van der Waals one dimensional PdBr2

Bikash Das, Kapildeb Dolui, Rahul Paramanik, Tanima Kundu, Sujan Maity, Anudeepa Ghosh, Mainak Palit, Subhadeep Datta
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 263504 (2023)
https://doi.org/10.1063/5.0150243
Published: June 2023
View articletitled, Ultrahigh breakdown current density of van der Waals one dimensional PdBr2
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Includes: Supplementary data
Journal Articles

Vapor phase synthesis of topological semimetal MoP2 nanowires and their resistivity

Gangtae Jin, Hyeuk Jin Han, James L. Hart, Quynh P. Sam, Mehrdad T. Kiani, David J. Hynek, Vicky Hasse, Claudia Felser, Judy J. Cha
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 113105 (2022)
https://doi.org/10.1063/5.0106357
Published: September 2022
View articletitled, Vapor phase synthesis of topological semimetal MoP2 nanowires and their resistivity
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Includes: Supplementary data
Journal Articles

Electro-thermal modeling and reliability analysis of Cu–carbon hybrid interconnects for beyond-CMOS computing

B. Kumari, R. Sharma, M. Sahoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 101901 (2022)
https://doi.org/10.1063/5.0101329
Published: September 2022
View articletitled, Electro-thermal modeling and reliability analysis of Cu–carbon hybrid interconnects for beyond-CMOS computing
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Includes: Supplementary data
Journal Articles

Multiscale characterization of the joint bonded by Cu@Ag core@shell nanoparticles

Y. Tu, P. L. Zhu, G. Li, Q. L. Ouyang, H. Chang, F. R. Zhou, Y. Shimizu, K. Inoue, Y. Nagai, R. Sun, C. P. Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 213101 (2020)
https://doi.org/10.1063/5.0007534
Published: May 2020
View articletitled, Multiscale characterization of the joint bonded by Cu@Ag core@shell nanoparticles
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Includes: Supplementary data
Journal Articles

A laboratory X-ray microscopy study of cracks in on-chip interconnect stacks of integrated circuits

K. Kutukova, S. Niese, C. Sander, Y. Standke, J. Gluch, M. Gall, E. Zschech
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 091901 (2018)
https://doi.org/10.1063/1.5031204
Published: August 2018
View articletitled, A laboratory X-ray microscopy study of cracks in on-chip interconnect stacks of integrated circuits
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Journal Articles

Current-induced surface roughness reduction in conducting thin films

Editor’s Pick
Lin Du, Dimitrios Maroudas
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103103 (2017)
https://doi.org/10.1063/1.4977024
Published: March 2017
View articletitled, Current-induced surface roughness reduction in conducting thin films
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Journal Articles

Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

X. Guo, D. Pei, H. Zheng, S. W. King, Y.-H. Lin, H.-S. Fung, C.-C. Chen, Y. Nishi, J. L. Shohet
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 232905 (2015)
https://doi.org/10.1063/1.4937582
Published: December 2015
View articletitled, Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy
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Journal Articles

Hybrid stacking structure of electroplated copper onto graphene for future interconnect applications

Ya-Wen Su, Cen-Shawn Wu, Chih-Hua Liu, Hung-Yi Lin, Chii-Dong Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 093105 (2015)
https://doi.org/10.1063/1.4930154
Published: September 2015
View articletitled, Hybrid stacking structure of electroplated copper onto graphene for future interconnect applications
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Journal Articles

Reduced stability of copper interconnects due to wrinkles and steps on hexagonal boron nitride substrates

Jian Gao, Philippe K. Chow, Abhay V. Thomas, Toh-Ming Lu, Theodorian Borca-Tasciuc, Nikhil Koratkar
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 123108 (2014)
https://doi.org/10.1063/1.4896617
Published: September 2014
View articletitled, Reduced stability of copper interconnects due to wrinkles and steps on hexagonal boron nitride substrates
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Includes: Supplementary data
Journal Articles

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

Neetu Prasad, Anita Kumari, P. K. Bhatnagar, P. C. Mathur, C. S. Bhatia
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 113513 (2014)
https://doi.org/10.1063/1.4895802
Published: September 2014
View articletitled, Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits
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Journal Articles

Impact of the contact's geometry on the line resistivity of carbon nanotubes bundles for applications as horizontal interconnects

N. Chiodarelli, A. Fournier, J. Dijon
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 053115 (2013)
https://doi.org/10.1063/1.4817648
Published: August 2013
View articletitled, Impact of the contact's geometry on the line resistivity of carbon nanotubes bundles for applications as horizontal interconnects
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Journal Articles

Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects

Ranida Wongpiya, Jiaomin Ouyang, Taeho Roy Kim, Michael Deal, Robert Sinclair, Yoshio Nishi, Bruce Clemens
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 022104 (2013)
https://doi.org/10.1063/1.4813396
Published: July 2013
View articletitled, Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects
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Journal Articles

Stress control during thermal annealing of copper interconnects

C.-C. Yang, C. Witt, P.-C. Wang, D. Edelstein, R. Rosenberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 051911 (2011)
https://doi.org/10.1063/1.3551627
Published: January 2011
View articletitled, Stress control during thermal annealing of copper interconnects
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Journal Articles

Resistivity dominated by surface scattering in sub-50 nm Cu wires

R. L. Graham, G. B. Alers, T. Mountsier, N. Shamma, S. Dhuey, S. Cabrini, R. H. Geiss, D. T. Read, S. Peddeti
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 042116 (2010)
https://doi.org/10.1063/1.3292022
Published: January 2010
View articletitled, Resistivity dominated by surface scattering in sub-50 nm Cu wires
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Journal Articles

Ultrasound holography for noninvasive imaging of buried defects and interfaces for advanced interconnect architectures

Gajendra Shekhawat, Arvind Srivastava, Shraddha Avasthy, Vinayak Dravid
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 263101 (2009)
https://doi.org/10.1063/1.3263716
Published: December 2009
View articletitled, Ultrasound holography for noninvasive imaging of buried defects and interfaces for advanced interconnect architectures
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Journal Articles

Correlation between a threshold failure time and void nucleation for describing the bimodal electromigration behavior of copper interconnects

R. G. Filippi, P.-C. Wang, A. Brendler, J. R. Lloyd
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 072111 (2009)
https://doi.org/10.1063/1.3200233
Published: August 2009
View articletitled, Correlation between a threshold failure time and void nucleation for describing the bimodal electromigration behavior of copper interconnects
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Journal Articles

Horizontally aligned Cu 5 Si polycrystalline nanorods on Si

Wei Wu, Qingkai Yu, Jiaming Zhang, Jie Lian, Gang Liang, Rodney C. Ewing, Shin-Shem Pei
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 253113 (2008)
https://doi.org/10.1063/1.2952770
Published: June 2008
View articletitled, Horizontally aligned Cu 5 Si polycrystalline nanorods on Si
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Journal Articles

Dielectric degradation mechanism for copper interconnects capped with CoWP

T. L. Tan, C. L. Gan, A. Y. Du, C. K. Cheng, J. P. Gambino
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 201916 (2008)
https://doi.org/10.1063/1.2929388
Published: May 2008
View articletitled, Dielectric degradation mechanism for copper interconnects capped with CoWP
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Journal Articles

Characterization of the crystallographic microstructure of the stress-induced void in Cu interconnects

Hyo-Jong Lee, Heung Nam Han, Jae-Hun Kim, Suk Hoon Kang, Yi-Gil Cho, Jeong-Yun Sun, Do Hyun Kim, Kyu Hwan Oh
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 141917 (2008)
https://doi.org/10.1063/1.2906902
Published: April 2008
View articletitled, Characterization of the crystallographic microstructure of the stress-induced void in Cu interconnects
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Journal Articles

Thermally stable amorphous ( Al Mo Nb Si Ta Ti V Zr ) 50 N 50 nitride film as diffusion barrier in copper metallization

Ming-Hung Tsai, Chun-Wen Wang, Chia-Han Lai, Jien-Wei Yeh, Jon-Yiew Gan
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 052109 (2008)
https://doi.org/10.1063/1.2841810
Published: February 2008
View articletitled, Thermally stable amorphous ( Al Mo Nb Si Ta Ti V Zr ) 50 N 50 nitride film as diffusion barrier in copper metallization
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