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Journal Articles

WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition

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Ruixue Li, Rebecca A. Dawley, Shivanshu Mishra, Anil Adhikari, Ageeth A. Bol, Steven J. Koester
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253102 (2025)
https://doi.org/10.1063/5.0267728
Published: June 2025
View articletitled, WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
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Journal Articles

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

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J. Lee, Y. C. Chiu, C. Bayram
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242101 (2025)
https://doi.org/10.1063/5.0257758
Published: June 2025
View articletitled, Efficiency cliff in scaling InGaN light-emitting diodes down to submicron
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Journal Articles

Semipolar (11  2 ¯  2) AlN/AlGaN quasi-vertical Schottky barrier diodes grown on m-sapphire

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Junxue Ran, Yijian Song, Jiankun Yang, Jingnan Dong, Yongxiang Wang, Ziqiang Huo, Junxi Wang, Tongbo Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 223501 (2025)
https://doi.org/10.1063/5.0269809
Published: June 2025
View articletitled, Semipolar (11  2 ¯  2) AlN/AlGaN quasi-vertical Schottky barrier diodes grown on m-sapphire
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Journal Articles

Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

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Rohith Soman, Mohamadali Malakoutian, Kelly Woo, Jeong-Kyu Kim, Thomas Andres Rodriguez, Rafael Perez Martinez, Matthew DeJarld, Maher Tahhan, Jarrod Valliancourt, Eduardo M. Chumbes, Jeffrey Laroche, Srabanti Chowdhury
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 213503 (2025)
https://doi.org/10.1063/5.0261673
Published: May 2025
View articletitled, Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling
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Journal Articles

AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers

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Masanobu Hiroki, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202108 (2025)
https://doi.org/10.1063/5.0268213
Published: May 2025
View articletitled, AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers
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Journal Articles

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

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S. Geiskopf, J. Igarashi, G. Malinowski, J.-X. Lin, J. Gorchon, S. Mangin, J. Hohlfeld, D. Lacour, M. Hehn
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152405 (2025)
https://doi.org/10.1063/5.0254042
Published: April 2025
View articletitled, Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction
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Journal Articles

Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts

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Zhaofeng Wang, Zhihong Liu, Xiaojin Chen, Xing Chen, Hanghai Du, Weichuan Xing, Weihang Zhang, Shenglei Zhao, Xiangdong Li, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152104 (2025)
https://doi.org/10.1063/5.0256979
Published: April 2025
View articletitled, Enhancement-mode GaN/AlGaN p-channel field effect transistors with ID  >  110 mA/mm achieved through source/drain tunnel junction contacts
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Journal Articles

Locally sealed microfabricated vapor cells filled from an ex situ Cs source

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L. Péroux, A. Dewilde, R. Chutani, A. Mazzamurro, J. Bonhomme, A. Mursa, J.-F. Clément, A. Talbi, P. Pernod, N. Passilly, V. Maurice
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 144003 (2025)
https://doi.org/10.1063/5.0265624
Published: April 2025
View articletitled, Locally sealed microfabricated vapor cells filled from an ex situ Cs source
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Journal Articles

Spin-orbit torque switching in Co/Ni multilayers with strong domain wall pinning

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Quwen Wang, Zetong Li, Qian Zhao, Bin He, Tengfei Zhang, Zimu Li, Chenbo Zhao, Jianbo Wang, Qingfang Liu, Guoqiang Yu, Jinwu Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122405 (2025)
https://doi.org/10.1063/5.0256651
Published: March 2025
View articletitled, Spin-orbit torque switching in Co/Ni multilayers with strong domain wall pinning
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Journal Articles

Line width narrowing of superconducting nanowire single photon detectors using atomic layer etching

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Daniel N. Shanks, Jason P. Allmaras, Sahil R. Patel, Boris A. Korzh, Emma E. Wollman, Frank Greer, Andrew D. Beyer, Matthew D. Shaw
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112602 (2025)
https://doi.org/10.1063/5.0252913
Published: March 2025
View articletitled, Line width narrowing of superconducting nanowire single photon detectors using atomic layer etching
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Journal Articles

Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension

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Qiuyan Li, Jinyang Liu, Weibing Hao, Xinrui Xu, Zhao Han, Song He, Xiaodong Xu, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 092102 (2025)
https://doi.org/10.1063/5.0248466
Published: March 2025
View articletitled, Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension
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Journal Articles

A highly integrated three-axis vector diamond quantum magnetometer with a compact electrical package

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Xiao Peng, Fei Xie, Yaochen Zhu, Xin Luo, Qihui Liu, Dan Wang, Yuqiang Hu, Jiachen Han, Lingyun Li, Jianping Liu, Hao Chen, Jiangong Cheng, Zhenyu Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 081101 (2025)
https://doi.org/10.1063/5.0252844
Published: February 2025
View articletitled, A highly integrated three-axis vector diamond quantum magnetometer with a compact electrical package
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Journal Articles

Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer

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Achintya Paradkar, Paul Nicaise, Karim Dakroury, Fabian Resare, Witlef Wieczorek
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022601 (2025)
https://doi.org/10.1063/5.0235266
Published: January 2025
View articletitled, Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
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Journal Articles

Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3

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Zesheng Lv, Tianzhi Peng, Gang Wang, Hao Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 191104 (2024)
https://doi.org/10.1063/5.0232885
Published: November 2024
View articletitled, Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3
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Journal Articles

Performance enhancement of solution-processed organic thin-film transistors incorporating an improved Corbino structure

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Anuj Rajpoot, Soumya Dutta
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 183301 (2024)
https://doi.org/10.1063/5.0229623
Published: October 2024
View articletitled, Performance enhancement of solution-processed organic thin-film transistors incorporating an improved Corbino structure
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Journal Articles

Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

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Beibei Lv, Lixing Zhang, Jiongjiong Mo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 153502 (2024)
https://doi.org/10.1063/5.0230452
Published: October 2024
View articletitled, Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process
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Journal Articles

Control of spin–orbit torque-driven domain nucleation through geometry in chirally coupled magnetic tracks

Editor’s PickOpen Access
Guillaume Beaulieu, Zhaochu Luo, Víctor Raposo, Laura J. Heyderman, Pietro Gambardella, Eduardo Martínez, Aleš Hrabec
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142401 (2024)
https://doi.org/10.1063/5.0224146
Published: September 2024
View articletitled, Control of spin–orbit torque-driven domain nucleation through geometry in chirally coupled magnetic tracks
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Journal Articles

High-fidelity lensless imaging with single hologram based on physics-guided frequency-aware network

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Yibin Xiong, Zeyu Zhou, Yufan Xu, Xilong Wang, Xuanbing Yang, Jianhui Wu, Feng Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 134102 (2024)
https://doi.org/10.1063/5.0225480
Published: September 2024
View articletitled, High-fidelity lensless imaging with single hologram based on physics-guided frequency-aware network
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Journal Articles

Wafer-scale fabrication of InGaP-on-insulator for nonlinear and quantum photonic applications

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Lillian Thiel, Joshua E. Castro, Trevor J. Steiner, Catherine L. Nguyen, Audrey Pechilis, Liao Duan, Nicholas Lewis, Garrett D. Cole, John E. Bowers, Galan Moody
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 131102 (2024)
https://doi.org/10.1063/5.0225747
Published: September 2024
View articletitled, Wafer-scale fabrication of InGaP-on-insulator for nonlinear and quantum photonic applications
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Journal Articles

Statistical study and parallelization of multiplexed single-electron sources

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S. Norimoto, P. See, N. Schoinas, I. Rungger, T. O. Boykin, II, M. D. Stewart, Jr., J. P. Griffiths, C. Chen, D. A. Ritchie, M. Kataoka
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 113501 (2024)
https://doi.org/10.1063/5.0225998
Published: September 2024
View articletitled, Statistical study and parallelization of multiplexed single-electron sources
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