1-20 of 251
PIN diode
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates

Rongqiao Wan, Lin Zhang, Yuanhao Zhu, Kwang Hong Lee, Qimiao Chen, Fengshuo Wan, Shaoteng Wu, Jun-wei Luo, Chuan Seng Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151103 (2025)
https://doi.org/10.1063/5.0250239
Published: April 2025
View articletitled, Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates
Open the PDF for Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates in another window
Journal Articles

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Yulian Yin, Xiaoyu Liu, Xi Tang, Xuan Xie, Huan Wang, Changhui Zhao, Shu Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 173506 (2024)
https://doi.org/10.1063/5.0231294
Published: October 2024
View articletitled, Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs
Open the PDF for Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs in another window
Journal Articles

THz generation by AlGaAs/GaAs heterostructured p-i-n diode

V. Trukhin, I. Mustafin, V. Malevich, X. Fan, V. Kalinovskii, E. Kontrosh, K. Prudchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 031101 (2024)
https://doi.org/10.1063/5.0218713
Published: July 2024
View articletitled, THz generation by AlGaAs/GaAs heterostructured p-i-n diode
Open the PDF for THz generation by AlGaAs/GaAs heterostructured p-i-n diode in another window
Journal Articles

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

A. S. Senarath, S. Islam, A. Sengupta, M. W. McCurdy, T. Anderson, A. Jacobs, R. Kaplar, D. R. Ball, E. X. Zhang, S. T. Pantelides, R. A. Reed, M. A. Ebrish, D. M. Fleetwood, J. D. Caldwell, R. D. Schrimpf
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 132101 (2024)
https://doi.org/10.1063/5.0189744
Published: March 2024
View articletitled, Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design
Open the PDF for Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design in another window
Includes: Supplementary data
Journal Articles

P-i-N and Schottky P-i-N diamond diodes for high power limiters

Harshad Surdi, Mason Bressler, Mohammad Faizan Ahmad, Franz Koeck, Bryce Winters, Stephen Goodnick, Trevor Thornton, Robert J. Nemanich, Josephine Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 062104 (2024)
https://doi.org/10.1063/5.0176966
Published: February 2024
View articletitled, P-i-N and Schottky P-i-N diamond diodes for high power limiters
Open the PDF for P-i-N and Schottky P-i-N diamond diodes for high power limiters in another window
Includes: Supplementary data
Journal Articles

The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir

M. Zöllner, H. Mannel, F. Rimek, B. Maib, N. Schwarz, A. D. Wieck, A. Ludwig, A. Lorke, M. Geller
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 023102 (2024)
https://doi.org/10.1063/5.0183821
Published: January 2024
View articletitled, The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir
Open the PDF for The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir in another window
Includes: Supplementary data
Journal Articles

SiV center electroluminescence in high current density diamond p-i-n diode

M. A. Lobaev, D. B. Radishev, A. L. Vikharev, A. M. Gorbachev, S. A. Bogdanov, V. A. Isaev, S. A. Kraev, A. I. Okhapkin, E. A. Arhipova, E. V. Demidov, M. N. Drozdov
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 251116 (2023)
https://doi.org/10.1063/5.0178908
Published: December 2023
View articletitled, SiV center electroluminescence in high current density diamond p-i-n diode
Open the PDF for SiV center electroluminescence in high current density diamond p-i-n diode in another window
Includes: Supplementary data
Journal Articles

High performance germanium on silicon photodiodes for back-end-of-line photonic integration

S. Marzen, E. Postelnicu, J. Michel, K. Wada, L. C. Kimerling
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 111105 (2023)
https://doi.org/10.1063/5.0153651
Published: September 2023
View articletitled, High performance germanium on silicon photodiodes for back-end-of-line photonic integration
Open the PDF for High performance germanium on silicon photodiodes for back-end-of-line photonic integration in another window
Journal Articles

Active electromagnetic absorption metasurface with a switchable reflection band

Qingxin Guo, Qian Chen, Jianxun Su, Zengrui Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 101703 (2023)
https://doi.org/10.1063/5.0166442
Published: September 2023
View articletitled, Active electromagnetic absorption metasurface with a switchable reflection band
Open the PDF for Active electromagnetic absorption metasurface with a switchable reflection band in another window
Journal Articles

Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN

Rongrong Chen, Di Wang, Xinyu Han, Bo Feng, Hongyan Zhu, Caina Luan, Jin Ma, Hongdi Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 082101 (2023)
https://doi.org/10.1063/5.0159065
Published: August 2023
View articletitled, Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN
Open the PDF for Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN in another window
Includes: Supplementary data
Journal Articles

A frequency-adjustable helical antenna using shape memory alloy

Wei Wang, Cihan Asci, Wenxin Zeng, Rachel Owyeung, Sameer Sonkusale
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 041901 (2023)
https://doi.org/10.1063/5.0154602
Published: July 2023
View articletitled, A frequency-adjustable helical antenna using shape memory alloy
Open the PDF for A frequency-adjustable helical antenna using shape memory alloy in another window
Includes: Supplementary data
Journal Articles

Wideband switchable linear polarization rotator based on metasurface

Ping Wang, Yifei Qin, Yu Wang, Hongcheng Zhou, Zhongming Yan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 011701 (2023)
https://doi.org/10.1063/5.0155015
Published: July 2023
View articletitled, Wideband switchable linear polarization rotator based on metasurface
Open the PDF for Wideband switchable linear polarization rotator based on metasurface in another window
Journal Articles

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

R. Finn, M. O'Donovan, P. Farrell, J. Moatti, T. Streckenbach, T. Koprucki, S. Schulz
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 241104 (2023)
https://doi.org/10.1063/5.0148168
Published: June 2023
View articletitled, Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters
Open the PDF for Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters in another window
Journal Articles

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212103 (2023)
https://doi.org/10.1063/5.0150029
Published: May 2023
View articletitled, Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
Open the PDF for Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES) in another window
Includes: Supplementary data
Journal Articles

Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density

Yanjun Li, Shu Yang, Fengwei Ji, Xi Tang, Kuang Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092102 (2023)
https://doi.org/10.1063/5.0140725
Published: February 2023
View articletitled, Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density
Open the PDF for Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density in another window
Includes: Supplementary data
Journal Articles

Electroluminescence of negatively charged single NV centers in diamond

M. Haruyama, H. Kato, M. Ogura, Y. Kato, D. Takeuchi, S. Yamasaki, T. Iwasaki, H. Morishita, M. Fujiwara, N. Mizuochi, T. Makino
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 072101 (2023)
https://doi.org/10.1063/5.0138050
Published: February 2023
View articletitled, Electroluminescence of negatively charged single NV centers in diamond
Open the PDF for Electroluminescence of negatively charged single NV centers in diamond in another window
Journal Articles

Utilization of harmonics in phaseless near-field microwave computational imaging based on space–time-coding transmissive metasurface

Jiaqi Han, Tong Wang, Silong Chen, Xiangjin Ma, Guanxuan Li, Haixia Liu, Long Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 031701 (2023)
https://doi.org/10.1063/5.0132084
Published: January 2023
View articletitled, Utilization of harmonics in phaseless near-field microwave computational imaging based on space–time-coding transmissive metasurface
Open the PDF for Utilization of harmonics in phaseless near-field microwave computational imaging based on space–time-coding transmissive metasurface in another window
Journal Articles

Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation

Yun Tang, Lei Wang, Xiaowu Cai, Peng Lu, Bo Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 022101 (2023)
https://doi.org/10.1063/5.0130017
Published: January 2023
View articletitled, Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation
Open the PDF for Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation in another window
Journal Articles

Direction-reversible asymmetric transmission with tunable chiral metamaterial

Shufang Dong, Qi Hu, Weixu Yang, Kai Qu, Ke Chen, Tian Jiang, Yijun Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 191701 (2022)
https://doi.org/10.1063/5.0122878
Published: November 2022
View articletitled, Direction-reversible asymmetric transmission with tunable chiral metamaterial
Open the PDF for Direction-reversible asymmetric transmission with tunable chiral metamaterial in another window
Journal Articles

Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting

J. Legendre, P.-O. Chapuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 193902 (2022)
https://doi.org/10.1063/5.0116662
Published: November 2022
View articletitled, Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting
Open the PDF for Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting in another window
Includes: Supplementary data