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Journal Articles

Layered semimetal electrodes for future heterogeneous electronics

Bubunu Biswal, Ramesh Rajarapu, Saroj Poudyal, Renu Yadav, Prahalad Kanti Barman, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 113102 (2023)
https://doi.org/10.1063/5.0164063
Published: September 2023
View article titled, Layered semimetal electrodes for future heterogeneous electronics
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Includes: Supplementary data
Journal Articles

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 102102 (2023)
https://doi.org/10.1063/5.0166745
Published: September 2023
View article titled, Control on the density and optical properties of color centers at SiO<sub>2</sub>/SiC interfaces by oxidation and annealing
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Includes: Supplementary data
Journal Articles

Highly stable all-inorganic CsPbBr3 perovskite solar cells based on pulsed laser deposition

Qianglin Song, Hao Zhang, Xuan Jin, Hong Wang, Peng Wang, Mohsin Ijaz, Qingyu Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 092103 (2023)
https://doi.org/10.1063/5.0156462
Published: August 2023
View article titled, Highly stable all-inorganic CsPbBr<sub>3</sub> perovskite solar cells based on pulsed laser deposition
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Includes: Supplementary data
Journal Articles

Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Dongsu Kim, Chong-Myeong Song, Su Jin Heo, Goeun Pyo, Dongha Kim, Ji Hwan Lee, Kyung-Ho Park, Shinbuhm Lee, Hyuk-Jun Kwon, Jae Eun Jang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 042904 (2023)
https://doi.org/10.1063/5.0123608
Published: July 2023
View article titled, Nonvolatile flash memory device with ferroelectric blocking layer via <em>in situ</em> ALD process
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Journal Articles

Assessment of bonding characteristic of β-(AlxGa1−x)2O3 alloys from photoluminescence and x-ray absorption near edge spectroscopy

Jayanta Bhattacharjee, R. K. Gupta, S. D. Singh
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152104 (2023)
https://doi.org/10.1063/5.0148800
Published: April 2023
View article titled, Assessment of bonding characteristic of β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys from photoluminescence and x-ray absorption near edge spectroscopy
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Includes: Supplementary data
Journal Articles

Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors

Sunjie Hu, Meng Xu, Cong Peng, Longlong Chen, Hai Liu, Xifeng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123502 (2023)
https://doi.org/10.1063/5.0137931
Published: March 2023
View article titled, Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors
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Journal Articles

Redshift and amplitude increase in the dielectric function of corundum-like α -(TixGa1−x)2O3

Elias Kluth, Michael Fay, Christopher Parmenter, Joseph Roberts, Emily Smith, Craig Stoppiello, Fabien Massabuau, Rüdiger Goldhahn, Martin Feneberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092101 (2023)
https://doi.org/10.1063/5.0139725
Published: February 2023
View article titled, Redshift and amplitude increase in the dielectric function of corundum-like α -(Ti<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>
Open the PDF for Redshift and amplitude increase in the dielectric function of corundum-like α -(Ti<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> in another window
Includes: Supplementary data
Journal Articles

Interface design of transparent thermoelectric epitaxial ZnO/SnO2 multilayer film for simultaneous realization of low thermal conductivity and high optical transmittance

Takafumi Ishibe, Yuki Komatsubara, Toranosuke Katayama, Yuichiro Yamashita, Nobuyasu Naruse, Yutaka Mera, Azusa N. Hattori, Hidekazu Tanaka, Yoshiaki Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 041603 (2023)
https://doi.org/10.1063/5.0124814
Published: January 2023
View article titled, Interface design of transparent thermoelectric epitaxial ZnO/SnO<sub>2</sub> multilayer film for simultaneous realization of low thermal conductivity and high optical transmittance
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Journal Articles

Demonstration and analysis of ambipolar SnO inverter with high gain

Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 013504 (2023)
https://doi.org/10.1063/5.0131057
Published: January 2023
View article titled, Demonstration and analysis of ambipolar SnO inverter with high gain
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Includes: Supplementary data
Journal Articles

Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell

Abinash Adhikari, Pawel Strak, Piotr Dluzewski, Agata Kaminska, Ewa Przezdziecka
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 242103 (2022)
https://doi.org/10.1063/5.0123342
Published: December 2022
View article titled, Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
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Includes: Supplementary data
Journal Articles

Electrically tuning near-field heat flux using metal–oxide–semiconductor structure considering gradient dielectric function distribution

Deyu Xu, Junming Zhao, Linhua Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 181112 (2022)
https://doi.org/10.1063/5.0123623
Published: November 2022
View article titled, Electrically tuning near-field heat flux using metal–oxide–semiconductor structure considering gradient dielectric function distribution
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Includes: Supplementary data
Journal Articles

Room-temperature DC-sputtered p-type CuO accumulation-mode thin-film transistors gated by HfO2

Xi Zeng, Maria Zhukova, Sébastien Faniel, Guoli Li, Denis Flandre
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 133503 (2022)
https://doi.org/10.1063/5.0098757
Published: September 2022
View article titled, Room-temperature DC-sputtered p-type CuO accumulation-mode thin-film transistors gated by HfO<sub>2</sub>
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Journal Articles

Oxygen vacancy-enriched ALD NiO sub-50 nm thin films for enhanced triethylamine detection

Hongyin Pan, Chenyu Wang, Zexu Zhang, Yingying Li, Xinke Hou, Wei Zheng, Xianghong Liu, Yong Wan, Jun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 111603 (2022)
https://doi.org/10.1063/5.0104480
Published: September 2022
View article titled, Oxygen vacancy-enriched ALD NiO sub-50 nm thin films for enhanced triethylamine detection
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Includes: Supplementary data
Journal Articles

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

J. Cañas, C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez, E. Gheeraert
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072101 (2022)
https://doi.org/10.1063/5.0103037
Published: August 2022
View article titled, High quality SiO<sub>2</sub>/diamond interface in O-terminated p-type diamond MOS capacitors
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Journal Articles

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062104 (2022)
https://doi.org/10.1063/5.0095468
Published: August 2022
View article titled, Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates
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Journal Articles

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

OmerFaruk Karadavut, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, Krishna C. Mandal
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 012103 (2022)
https://doi.org/10.1063/5.0089236
Published: July 2022
View article titled, Enhancement of radiation detection performance with reduction of EH<sub>6/7</sub> deep levels in n-type 4H–SiC through thermal oxidation
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Journal Articles

Double injection function InGaZnO transistor—computational analysis of the patterned doping method

Gil Sheleg, Nir Tessler
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253504 (2022)
https://doi.org/10.1063/5.0094334
Published: June 2022
View article titled, Double injection function InGaZnO transistor—computational analysis of the patterned doping method
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Journal Articles

Enhancement of the ferroelectricity by interface engineering observed by in situ transmission electron microscope

Chen Luo, Zhihao Yu, Hongkai Ning, Zuoyuan Dong, Chaolun Wang, Litao Sun, Xing Wu, Xinran Wang, Junhao Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 232107 (2022)
https://doi.org/10.1063/5.0087715
Published: June 2022
View article titled, Enhancement of the ferroelectricity by interface engineering observed by in situ transmission electron microscope
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Includes: Supplementary data
Journal Articles

Interlayer-enhanced room temperature in-plane magnetoresistance in graphene nano-crystalline carbon (GNC) film/SiO2/p-Si heterostructures

Kangcheng Sun, Xiaohan Chen, Qingkang Ren, Chao Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 212402 (2022)
https://doi.org/10.1063/5.0087316
Published: May 2022
View article titled, Interlayer-enhanced room temperature in-plane magnetoresistance in graphene nano-crystalline carbon (GNC) film/SiO<sub>2</sub>/p-Si heterostructures
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Includes: Supplementary data
Journal Articles

Work function of van der Waals topological semimetals: Experiment and theory

Bubunu Biswal, Shashi B. Mishra, Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, Prahalad Kanti Barman, Khade Ramdas Pandurang, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 093101 (2022)
https://doi.org/10.1063/5.0079032
Published: March 2022
View article titled, Work function of van der Waals topological semimetals: Experiment and theory
Open the PDF for Work function of van der Waals topological semimetals: Experiment and theory in another window
Includes: Supplementary data