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Journal Articles

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

Tomoya Okuda, Shunsuke Ota, Takahiko Kawahara, Kozo Makiyama, Ken Nakata, Takuya Maeda, Atsushi Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 052105 (2025)
https://doi.org/10.1063/5.0228924
Published: February 2025
View articletitled, Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
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Journal Articles

Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

Hui Zeng, Weimin Wang, Ivan G. Ivanov, Vanya Darakchieva, Jianwu Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 162102 (2024)
https://doi.org/10.1063/5.0226900
Published: October 2024
View articletitled, Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction
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Journal Articles

Polar metals with coexisting ferroelectricity and high-density conduction electrons

De Hou, Jiachang Bi, Jingkai Yang, Hansong Geng, Zhenzhen Wang, Zeguo Lin, Bolin Li, Zongwei Ma, Caixing Liu, Zhi Meng, Ruyi Zhang, Yujuan Pei, Guangchao Zhang, Shaozhu Xiao, Liang Wu, Qinghua Zhang, Fang Yang, Jiandong Guo, Zhigao Sheng, Yanwei Cao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 062903 (2024)
https://doi.org/10.1063/5.0187330
Published: February 2024
View articletitled, Polar metals with coexisting ferroelectricity and high-density conduction electrons
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Includes: Supplementary data
Journal Articles

Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas

Chiranjit Karmakar, R. K. Kaneriya, Megha Malasi, Shivam Rathod, Devendra Kumar, Sujay Chakravarty, R. B. Upadhyay, Punam Kumar, A. N. Bhattacharya, U. S. Joshi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 201601 (2023)
https://doi.org/10.1063/5.0142605
Published: May 2023
View articletitled, Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas
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Includes: Supplementary data
Journal Articles

Phase transition and twinning in polycrystals probed by in situ high temperature 3D reciprocal space mapping

Ravi Raj Purohit Purushottam Raj Purohit, Daniel Pepin Fowan, Elsa Thune, Stephan Arnaud, Gilbert Chahine, Nils Blanc, Olivier Castelnau, René Guinebretière
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 181901 (2022)
https://doi.org/10.1063/5.0109058
Published: October 2022
View articletitled, Phase transition and twinning in polycrystals probed by in situ high temperature 3D reciprocal space mapping
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Includes: Supplementary data
Journal Articles

A large anomalous Hall conductivity induced by Weyl nodal lines in Fe70Al30

Bing Lv, Pei Liu, Yongzuo Wang, Cunxu Gao, Mingsu Si
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072405 (2022)
https://doi.org/10.1063/5.0096924
Published: August 2022
View articletitled, A large anomalous Hall conductivity induced by Weyl nodal lines in Fe70Al30
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Journal Articles

Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb

L. Scheffler, J. Werther, K. Gas, C. Schumacher, C. Gould, M. Sawicki, J. Kleinlein, L. W. Molenkamp
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 012401 (2022)
https://doi.org/10.1063/5.0092828
Published: July 2022
View articletitled, Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb
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Journal Articles

Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth

Muhammad Saddique Akbar Khan, Junchao Li, Qingbin Ji, Menglai Lei, Huanqing Chen, Rui Lang, Muhammad Maqbool, Xiaodong Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 112107 (2022)
https://doi.org/10.1063/5.0084836
Published: March 2022
View articletitled, Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth
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Includes: Supplementary data
Journal Articles

Ferroelectric and magnetic properties in ε-Fe2O3 epitaxial film

Yosuke Hamasaki, Shintaro Yasui, Tsukasa Katayama, Takanori Kiguchi, Shinya Sawai, Mitsuru Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 182904 (2021)
https://doi.org/10.1063/5.0063021
Published: November 2021
View articletitled, Ferroelectric and magnetic properties in ε-Fe2O3 epitaxial film
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Journal Articles

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Ang Li, Chong Wang, Shengrui Xu, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Xiaoli Lu, Jinfeng Zhang, Kai Liu, Yaopeng Zhao, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 122104 (2021)
https://doi.org/10.1063/5.0063638
Published: September 2021
View articletitled, Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
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Journal Articles

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Editor’s Pick
Weijie Wang, Jie Chen, James Spencer Lundh, Shahab Shervin, Seung Kyu Oh, Sara Pouladi, Zhoulyu Rao, Ja Yeon Kim, Min-Ki Kwon, Xiaohang Li, Sukwon Choi, Jae-Hyun Ryou
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 123501 (2020)
https://doi.org/10.1063/1.5142546
Published: March 2020
View articletitled, Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
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Includes: Supplementary data
Journal Articles

Strain engineering on the metal-insulator transition of VO2/TiO2 epitaxial films dependent on the strain state of vanadium dimers

Editor’s Pick
Bin Hong, Yuanjun Yang, Kai Hu, Yongqi Dong, Jingtian Zhou, Yue Zhang, Weisheng Zhao, Zhenlin Luo, Chen Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 251605 (2019)
https://doi.org/10.1063/1.5121876
Published: December 2019
View articletitled, Strain engineering on the metal-insulator transition of VO2/TiO2 epitaxial films dependent on the strain state of vanadium dimers
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Journal Articles

Evidence of ferroelectricity in ferrimagnetic κ-Al2O3-type In0.25Fe1.75O3 films

Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Tomoyasu Taniyama, Mitsuru Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 162901 (2016)
https://doi.org/10.1063/1.4964826
Published: October 2016
View articletitled, Evidence of ferroelectricity in ferrimagnetic κ-Al2O3-type In0.25Fe1.75O3 films
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Journal Articles

Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm

Dongwei Jiang, Wei Xiang, Fengyun Guo, Hongyue Hao, Xi Han, Xiaochao Li, Guowei Wang, Yingqiang Xu, Qingjiang Yu, Zhichuan Niu
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 121110 (2016)
https://doi.org/10.1063/1.4944849
Published: March 2016
View articletitled, Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm
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Journal Articles

Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

M. Shirazi-HD, K. Turkmeneli, S. Liu, S. Dai, C. Edmunds, J. Shao, G. Gardner, D. N. Zakharov, M. J. Manfra, O. Malis
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 121108 (2016)
https://doi.org/10.1063/1.4944847
Published: March 2016
View articletitled, Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices
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Journal Articles

Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

Y. Gu, Y. G. Zhang, X. Y. Chen, Y. J. Ma, S. P. Xi, B. Du, Hsby. Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 032102 (2016)
https://doi.org/10.1063/1.4940201
Published: January 2016
View articletitled, Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP
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Journal Articles

Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

JunShuai Xue, JinCheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 013508 (2016)
https://doi.org/10.1063/1.4939689
Published: January 2016
View articletitled, Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition
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Journal Articles

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

X. Li, J. Bergsten, D. Nilsson, Ö. Danielsson, H. Pedersen, N. Rorsman, E. Janzén, U. Forsberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 262105 (2015)
https://doi.org/10.1063/1.4937575
Published: December 2015
View articletitled, Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
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Journal Articles

An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography

Xiao-Meng Shen, Zhao-Yu He, Shi Liu, Zhi-Yuan Lin, Yong-Hang Zhang, David J. Smith, Martha R. McCartney
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 122109 (2015)
https://doi.org/10.1063/1.4931938
Published: September 2015
View articletitled, An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography
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Journal Articles

Graded band gap GaInNAs solar cells

F. Langer, S. Perl, S. Höfling, M. Kamp
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 233902 (2015)
https://doi.org/10.1063/1.4922279
Published: June 2015
View articletitled, Graded band gap GaInNAs solar cells
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