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Journal Articles

AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers

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Masanobu Hiroki, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202108 (2025)
https://doi.org/10.1063/5.0268213
Published: May 2025
View articletitled, AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers
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Journal Articles

Annealing effects on crystalline quality and device performance of ultrawide bandgap h-BN quasi-bulk crystals

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N. K. Hossain, G. Somasundaram, Z. Alemoush, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202107 (2025)
https://doi.org/10.1063/5.0260647
Published: May 2025
View articletitled, Annealing effects on crystalline quality and device performance of ultrawide bandgap h-BN quasi-bulk crystals
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Journal Articles

Carbon in GaN as a nonradiative recombination center

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Fangzhou Zhao, Hongyi Guan, Mark E. Turiansky, Chris G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 201106 (2025)
https://doi.org/10.1063/5.0267877
Published: May 2025
View articletitled, Carbon in GaN as a nonradiative recombination center
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Journal Articles

High thermoelectric performance of monolayer Janus ZnAXTe ( A   =  Ge, Sn; X   =  S, Se) induced by large band degeneracy and low lattice thermal conductivity

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Haomai Yang, Changhao Ding, Zhifu Duan, Jiang Zeng, Li-Ming Tang, Nannan Luo, Ke-Qiu Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202202 (2025)
https://doi.org/10.1063/5.0264169
Published: May 2025
View articletitled, High thermoelectric performance of monolayer Janus ZnAXTe ( A   =  Ge, Sn; X   =  S, Se) induced by large band degeneracy and low lattice thermal conductivity
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Journal Articles

Anomalous thermal conductivity anisotropy in bulk hexagonal AlN induced by structural phase transition

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Yue Wang, Anping Liu, Xiaolong Yang, Xiaoyuan Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202207 (2025)
https://doi.org/10.1063/5.0271507
Published: May 2025
View articletitled, Anomalous thermal conductivity anisotropy in bulk hexagonal AlN induced by structural phase transition
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Journal Articles

Anomalously dominating four-phonon scattering in pressure-dependent thermal transport in beryllium oxide

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Xiaoyan Bi, Xinglei Zhang, J. O. Morales-Ferreiro, Zeyu Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202204 (2025)
https://doi.org/10.1063/5.0260709
Published: May 2025
View articletitled, Anomalously dominating four-phonon scattering in pressure-dependent thermal transport in beryllium oxide
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Journal Articles

Design of Au urchin embedded in PMMA: A solution to balance photoresponse and dark-current for WS2 plasmonic photodetectors

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Wanyu Wang, Kaixi Shi, Jinhua Li, Hui Yang, Fujun Liu, Xuan Fang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 203501 (2025)
https://doi.org/10.1063/5.0267839
Published: May 2025
View articletitled, Design of Au urchin embedded in PMMA: A solution to balance photoresponse and dark-current for WS2 plasmonic photodetectors
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Journal Articles

Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates

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Yu-Hsin Chen, Jimy Encomendero, Chuan F. C. Chang, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202101 (2025)
https://doi.org/10.1063/5.0264000
Published: May 2025
View articletitled, Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates
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Journal Articles

Anharmonic suppression of ultra-narrow graphene nanoribbons confined in carbon nanotubes through host–guest interactions

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Bingze Wu, Yuxiang Gao, Yaping Zhao, Xuan Li, Kunpeng Tang, Chunguang Zhai, Xianhong Fan, Lei Shi, Mingguang Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 203101 (2025)
https://doi.org/10.1063/5.0271143
Published: May 2025
View articletitled, Anharmonic suppression of ultra-narrow graphene nanoribbons confined in carbon nanotubes through host–guest interactions
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Journal Articles

Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection

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Najm Alhosiny, Sami S. Alharthi, James Doogan, Edmund Clarke, Thorsten Ackemann
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 191102 (2025)
https://doi.org/10.1063/5.0261768
Published: May 2025
View articletitled, Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection
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Journal Articles

Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer

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Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
https://doi.org/10.1063/5.0252761
Published: May 2025
View articletitled, Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
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Journal Articles

Carrier mobility and transport mechanism in single-walled carbon nanotube (SWCNT) random network studied using impedance spectroscopy

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Manoranjan, Y. N. Mohapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192104 (2025)
https://doi.org/10.1063/5.0267473
Published: May 2025
View articletitled, Carrier mobility and transport mechanism in single-walled carbon nanotube (SWCNT) random network studied using impedance spectroscopy
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Journal Articles

Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector

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Dapeng Jin, Zhikai Gan, Songmin Zhou, Xi Wang, Quanzhi Sun, Xun Li, Liqi Zhu, Chun Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 191103 (2025)
https://doi.org/10.1063/5.0268537
Published: May 2025
View articletitled, Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector
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Journal Articles

Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics

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Dan Zhang, Hongli Wang, Jiandong Liu, Manzhe Zhao, Guannan Liu, Junyou Yang, Yubo Luo, Shufang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192105 (2025)
https://doi.org/10.1063/5.0267606
Published: May 2025
View articletitled, Dilute MnBi2Te4-alloying enables high-performance GeTe thermoelectrics
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Journal Articles

Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor

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Jinwei Hu, Bosen Wang, Xingyun Li, Ming Yuwen, Bo Zhang, Lianying Zhu, Jun Xu, Deyi Fu, Rong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193101 (2025)
https://doi.org/10.1063/5.0260965
Published: May 2025
View articletitled, Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor
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Journal Articles

Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures

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Lujun Wei, Pai Liu, Jincheng Peng, Yanghui Li, Lina Chen, Ping Liu, Feng Li, Wei Niu, Fei Huang, Jiaju Yang, Shuang Zhou, Yu Lu, Tianyu Liu, Jiarui Chen, Weihao Wang, Jian Zhang, Jun Du, Yong Pu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192403 (2025)
https://doi.org/10.1063/5.0256412
Published: May 2025
View articletitled, Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures
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Journal Articles

Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures

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Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Qian Sun, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192101 (2025)
https://doi.org/10.1063/5.0264963
Published: May 2025
View articletitled, Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures
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Journal Articles

Boundary scattering in topological Kondo insulator SmB6

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Narayan Poudel, Daniel J. Murray, Jason R. Jeffries, Krzysztof Gofryk
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 192201 (2025)
https://doi.org/10.1063/5.0265444
Published: May 2025
View articletitled, Boundary scattering in topological Kondo insulator SmB6
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Journal Articles

Sub-micron aperture VCSEL demonstrates ultralow ITH  =  0.05 mA and energy/bit  =  45.5 fJ/bit at 3 Kelvin

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Haonan Wu, Derek Chaw, Zetai Liu, Yulin He, Milton Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181104 (2025)
https://doi.org/10.1063/5.0269543
Published: May 2025
View articletitled, Sub-micron aperture VCSEL demonstrates ultralow ITH  =  0.05 mA and energy/bit  =  45.5 fJ/bit at 3 Kelvin
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Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

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Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View articletitled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
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