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Journal Articles

Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate

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Tao Zhang, Junjie Yu, Heyuan Chen, Yachao Zhang, Huake Su, Shengrui Xu, Xiangdong Li, Hongchang Tao, Ruowei Liu, Zeyang Ren, Weidong Zhu, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232102 (2025)
https://doi.org/10.1063/5.0275349
Published: June 2025
View articletitled, Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
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Journal Articles

Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate

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Yahui Feng, Hongxia Guo, Jinxin Zhang, Xiaoping Ouyang, Ruxue Bai, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 162105 (2025)
https://doi.org/10.1063/5.0268847
Published: April 2025
View articletitled, Effect of 20 MeV proton irradiation on the electrical properties of β-Ga2O3 Schottky barrier diodes with field plate
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Journal Articles

Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces

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Kentaro Yumigeta, Jan Kopaczek, Rounak Banerjee, Seyed Tohid Rajaei Moosavy, Anvesh Yarra, Blake Povilus, Hayley Ruddick, Renee Sailus, Mukesh Kumar, Sushant Lakhavade, Yunbo Ou, Zafer Mutlu, Seth Ariel Tongay
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151602 (2025)
https://doi.org/10.1063/5.0253262
Published: April 2025
View articletitled, Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces
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Journal Articles

Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces

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Yuan Kai, Jiawei Wang, Congyan Lu, Ling Li, Chao Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143502 (2025)
https://doi.org/10.1063/5.0248175
Published: April 2025
View articletitled, Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
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Journal Articles

Physics-informed neural networks for phase-field simulation in designing high energy storage performance polymer nanocomposites

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Dong-Duan Liu, Qiao Li, Yu-Jie Zhu, Ruo-Jie Cheng, Tan Zeng, Hongxiao Yang, Jun Ma, Jin-Liang He, Qi Li, Chao Yuan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 052901 (2025)
https://doi.org/10.1063/5.0244002
Published: February 2025
View articletitled, Physics-informed neural networks for phase-field simulation in designing high energy storage performance polymer nanocomposites
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Journal Articles

A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

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Heyuan Chen, Tao Zhang, Huake Su, Xiangdong Li, Shengrui Xu, Yachao Zhang, Ruowei Liu, Lei Xie, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012112 (2025)
https://doi.org/10.1063/5.0248171
Published: January 2025
View articletitled, A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity
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Journal Articles

Capacitance characterization and current transport mechanism of ZnSnN2 heterojunctions

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Fan Ye, Zi-Cheng Zhao, Cang-Shuang He, Jian-Lin Liang, Qian Gao, Yi-Zhu Xie, Dong-Ping Zhang, Xing-Min Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 242102 (2024)
https://doi.org/10.1063/5.0241401
Published: December 2024
View articletitled, Capacitance characterization and current transport mechanism of ZnSnN2 heterojunctions
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Journal Articles

High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

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MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, KangYao Wen, FangZhou Du, ChenKai Deng, JiaQi He, Yi Zhang, WenYue Yu, Qing Wang, HongYu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 132101 (2024)
https://doi.org/10.1063/5.0230034
Published: September 2024
View articletitled, High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
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Journal Articles

Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor

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Sheng-Guang Ren, Ge-Qi Mao, Yi-Bai Xue, Yu Zhang, Jia-Yi Sun, Wen-Bin Zuo, Yi Li, Kan-Hao Xue, Xiang-Shui Miao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123503 (2024)
https://doi.org/10.1063/5.0227603
Published: September 2024
View articletitled, Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor
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Journal Articles

Unification of the breakdown criterion for thermal field emission-driven microdischarges

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Chubin Lin, Jiandong Chen, Huihui Wang, Yangyang Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 104102 (2024)
https://doi.org/10.1063/5.0227666
Published: September 2024
View articletitled, Unification of the breakdown criterion for thermal field emission-driven microdischarges
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Journal Articles

Spin orbit coupling enhanced thermionic cooling in two-dimensional semiconductor structures

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Abdullah Al-Mamun, Chao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 013901 (2024)
https://doi.org/10.1063/5.0217543
Published: July 2024
View articletitled, Spin orbit coupling enhanced thermionic cooling in two-dimensional semiconductor structures
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Journal Articles

Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs

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Dong Li, Ruijuan Qi, Pengfei Zhu, Jun Wang, Jinzhong Zhang, Jun Li, Longhui Zeng, Mengjiao Li, Zhigao Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 213501 (2024)
https://doi.org/10.1063/5.0197266
Published: May 2024
View articletitled, Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs
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Includes: Supplementary data
Journal Articles

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

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Wenhui Xu, Zhenghao Shen, Zhenyu Qu, Tiancheng Zhao, Ailun Yi, Tiangui You, Genquan Han, Xin Ou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 112102 (2024)
https://doi.org/10.1063/5.0196517
Published: March 2024
View articletitled, Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface
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Includes: Supplementary data
Journal Articles

Revised Fowler–Dubridge model for multiphoton over-barrier electron emission from two-dimensional materials

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Yi Luo, Chen-Chen Er, Yee Sin Ang, L. K. Ang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 101109 (2024)
https://doi.org/10.1063/5.0195179
Published: March 2024
View articletitled, Revised Fowler–Dubridge model for multiphoton over-barrier electron emission from two-dimensional materials
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Includes: Supplementary data
Journal Articles

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

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B. A. Klein, A. A. Allerman, A. M. Armstrong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 103506 (2024)
https://doi.org/10.1063/5.0185336
Published: March 2024
View articletitled, Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
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Journal Articles

A detour transition between thermal field emission and space charge limited regimes

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Chubin Lin, Jiandong Chen, Yangyang Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 074103 (2024)
https://doi.org/10.1063/5.0190124
Published: February 2024
View articletitled, A detour transition between thermal field emission and space charge limited regimes
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Journal Articles

Self-rectifying resistive switching in MAPbI3-based memristor device

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Phu-Quan Pham, Truc-Quyen Thi Vo, Duy Khanh Le, Chuong Thanh Huynh, Tung Thanh Ngo, Phuong Tuyet Nguyen, Anh Tuan Thanh Pham, Nam Hoang Vu, Thang Bach Phan, Yoshiyuki Kawazoe, Ngoc Kim Pham
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 051601 (2024)
https://doi.org/10.1063/5.0178032
Published: January 2024
View articletitled, Self-rectifying resistive switching in MAPbI3-based memristor device
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Includes: Supplementary data
Journal Articles

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

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Leidang Zhou, Hao Chen, Tongling Xu, Jinlu Ruan, Yuru Lai, Yuxin Deng, Jiaxiang Chen, Xinbo Zou, Xing Lu, Liang Chen, Xiaoping Ouyang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 013506 (2024)
https://doi.org/10.1063/5.0185271
Published: January 2024
View articletitled, Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes
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Journal Articles

Thermionic enhanced heat transfer in x-ray tubes

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Suguo Chen, Pengtao Wang, Xiaoqiuyan Zhang, Sunchao Huang, Yue Wang, Min Hu, Chao Zhang, Yubin Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 012201 (2024)
https://doi.org/10.1063/5.0185921
Published: January 2024
View articletitled, Thermionic enhanced heat transfer in x-ray tubes
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Journal Articles

Effect of gamma irradiation on β -Ga2O3 vertical Schottky barrier diode

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Minwei Liu, Mingzhuo Hua, Xusheng Tian, Zhengxing Wang, Huhu Gao, Wentao Wang, Yiqiang Chen, Chunfu Zhang, Shenglei Zhao, Qian Feng, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 212103 (2023)
https://doi.org/10.1063/5.0170417
Published: November 2023
View articletitled, Effect of gamma irradiation on β -Ga2O3 vertical Schottky barrier diode
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