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Journal Articles
Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation
Yu-Ting Chen, Ching-Hsueh Chiu, Lu-Hsun Chen, Chuan-Hsien Li, Chii-Bin Wu, Chi-Tsu Yuan, Wen-Yu Wen, Chiashain Chuang, Dung-Sheng Tsai, Yueh-Chien Lee, Hertz Hsu, Wei Jen Hsueh, Ji-Lin Shen
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 222105 (2025)
Published: June 2025
Journal Articles
Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 202101 (2025)
Published: May 2025
Journal Articles
Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)
Available to PurchaseSwarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 152103 (2025)
Published: April 2025
Journal Articles
High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 143507 (2025)
Published: April 2025
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Electrically tunable nonvolatile 2D van der Waals p–n heterostructures based on GeSe-quasi 2D electron gas on the SrTiO3 surface
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 111603 (2025)
Published: March 2025
Journal Articles
Journal Articles
Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates
Available to PurchaseHong Yan, Zhaoting Zhang, Zhi Shiuh Lim, Shengwei Zeng, Jijun Yun, Shuanhu Wang, Yupu Zhang, Kexin Jin
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 071604 (2025)
Published: February 2025
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Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 063502 (2025)
Published: February 2025
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The interfacial trapped charge of quintuple-layers Al2O3 induced by point defect
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 043504 (2025)
Published: January 2025
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Charge-to-spin conversion at argon ion milled SrTiO3/NiFe hetero-interfaces
Available to PurchaseAmrendra Kumar, Utkarsh Shashank, Suman Kumar Maharana, John Rex Mohan, Joseph Vimal Vas, Surbhi Gupta, Hironori Asada, Rafal E. Dunin-Borkowski, Yasuhiro Fukuma, Rohit Medwal
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 032401 (2025)
Published: January 2025
Journal Articles
Journal Articles
Modulation of the 2DEGs mediated by 3d-4f exchange interaction via the stacking sequences
Available to PurchaseZeguo Lin, Zhaoqing Ding, Zhen Wang, Mingyu Yang, Xiaofeng Wu, Lifen Wang, Xiaoran Liu, Fang Yang, Jiandong Guo
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 261601 (2024)
Published: December 2024
Journal Articles
Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer
Available to PurchaseYuhao Yin, Haiyang Zhao, Rong Liu, Shizhao Fan, Jiandong Sun, Hua Qin, Helun Song, Jiadong Li, Shitao Dong, Qian Sun, Hui Yang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 192103 (2024)
Published: November 2024
Journal Articles
Discovering the incorporation limits for wurtzite AlPyN1 − y grown on GaN by metalorganic vapor phase epitaxy
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 132102 (2024)
Published: September 2024
Journal Articles
A. Papamichail, A. R. Persson, S. Richter, V. Stanishev, N. Armakavicius, P. Kühne, S. Guo, P. O. Å. Persson, P. P. Paskov, N. Rorsman, V. Darakchieva
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 123505 (2024)
Published: September 2024
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Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing
Available to PurchaseDmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, Arthur G. Pogosov
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 112103 (2024)
Published: September 2024
Journal Articles
Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
Published: July 2024
Journal Articles
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 262102 (2024)
Published: June 2024
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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Available to PurchaseE. Annelise Bergeron, F. Sfigakis, A. Elbaroudy, A. W. M. Jordan, F. Thompson, George Nichols, Y. Shi, Man Chun Tam, Z. R. Wasilewski, J. Baugh
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 222103 (2024)
Published: May 2024
Journal Articles
Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces
Available to PurchaseHuaqian Leng, Kunyao Xu, Hanyue Tian, Yongheng He, Yan Zhao, Minghui Xu, Xiaojiang Yu, Mark B. H. Breese, Hui Zhang, Zhengtai Liu, Dawei Shen, Xiaoqiang Wu, Jiabao Yi, Liang Qiao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 181604 (2024)
Published: May 2024
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