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Journal Articles

Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb2

Yun Suk Eo, Keenan Avers, Jarryd A. Horn, Hyeok Yoon, Shanta R. Saha, Alonso Suarez, Michael S. Fuhrer, Johnpierre Paglione
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233102 (2023)
https://doi.org/10.1063/5.0148249
Published: June 2023
View article titled, Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb<sub>2</sub>
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Includes: Supplementary data
Journal Articles

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 172103 (2023)
https://doi.org/10.1063/5.0149550
Published: April 2023
View article titled, Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures
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Includes: Supplementary data
Journal Articles

Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

Eric W. Blanton, Timothy A. Prusnick, Andrew J. Green, Nicholas Glavin, Michael Snure
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173502 (2023)
https://doi.org/10.1063/5.0132472
Published: April 2023
View article titled, Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures
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Includes: Supplementary data
Journal Articles

Realization of independent contacts in barrier-separated InAs/GaSb quantum wells

Xingjun Wu, Jianhuan Wang, Miaoling Huang, Shili Yan, Rui-Rui Du
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 122102 (2023)
https://doi.org/10.1063/5.0133795
Published: March 2023
View article titled, Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
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Includes: Supplementary data
Journal Articles

Spin-relaxation mechanisms in InAs quantum well heterostructures

J. D. S. Witt, S. J. Pauka, G. C. Gardner, S. Gronin, T. Wang, C. Thomas, M. J. Manfra, D. J. Reilly, M. C. Cassidy
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 083101 (2023)
https://doi.org/10.1063/5.0135297
Published: February 2023
View article titled, Spin-relaxation mechanisms in InAs quantum well heterostructures
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Includes: Supplementary data
Journal Articles

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

E. Annelise Bergeron, F. Sfigakis, Y. Shi, George Nichols, P. C. Klipstein, A. Elbaroudy, Sean M. Walker, Z. R. Wasilewski, J. Baugh
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 012103 (2023)
https://doi.org/10.1063/5.0126704
Published: January 2023
View article titled, Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
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Includes: Supplementary data
Journal Articles

Tunable interface states driven by ferroelectric polarization discontinuity in BiFeO3-based superlattice

Sa Zhang, Baishun Yang, Zijiang Liu, Xiaotao Zu, David O. Scanlon, Bing Huang, Liang Qiao, Haiyan Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 221601 (2022)
https://doi.org/10.1063/5.0098699
Published: November 2022
View article titled, Tunable interface states driven by ferroelectric polarization discontinuity in BiFeO<sub>3</sub>-based superlattice
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Includes: Supplementary data
Journal Articles

In situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas

Ting-Ting Wang, Sining Dong, Chong Li, Wen-Cheng Yue, Yang-Yang Lyu, Chen-Guang Wang, Chang-Kun Zeng, Zixiong Yuan, Wei Zhu, Zhi-Li Xiao, Xiaoli Lu, Bin Liu, Hai Lu, Hua-Bing Wang, Peiheng Wu, Wai-Kwong Kwok, Yong-Lei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 092101 (2022)
https://doi.org/10.1063/5.0097518
Published: August 2022
View article titled, <em>In situ</em> tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
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Includes: Supplementary data
Journal Articles

Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure

Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 081904 (2022)
https://doi.org/10.1063/5.0101255
Published: August 2022
View article titled, Electrical characterization and extraction of activation energies of the defect states in the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructure
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Includes: Supplementary data
Journal Articles

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Shanjie Li, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, Guoqiang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062101 (2022)
https://doi.org/10.1063/5.0094957
Published: August 2022
View article titled, Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress
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Includes: Supplementary data
Journal Articles

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Philipp Kühne, Nerijus Armakavicius, Alexis Papamichail, Dat Q. Tran, Vallery Stanishev, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253102 (2022)
https://doi.org/10.1063/5.0087033
Published: June 2022
View article titled, Enhancement of 2DEG effective mass in AlN/Al<sub>0.78</sub>Ga<sub>0.22</sub>N high electron mobility transistor structure determined by THz optical Hall effect
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Journal Articles

High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer

Hiroyuki Sazawa, Hirotaka Yamaguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 212102 (2022)
https://doi.org/10.1063/5.0090083
Published: May 2022
View article titled, High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer
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Journal Articles

Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template

Chung-Chi Chen, Ting-Chun Huang, Yu-Wei Lin, Yu-Ren Lin, Ping-Hsiu Wu, Ping-Wei Liou, Hao-Yu Hsieh, Yang-Yi Huang, Shaobo Yang, Yuh-Renn Wu, C. C. Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 022103 (2022)
https://doi.org/10.1063/5.0070599
Published: January 2022
View article titled, Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template
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Journal Articles

Metallic capped quasi-two-dimensional electron gas in a SrTiO3-based heterostructure

Huichao Wang, Chun Hung Suen, Hui Li, Songhua Cai, Xiaoyuan Zhou, Jiannong Wang, Ji-Yan Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 201602 (2021)
https://doi.org/10.1063/5.0074499
Published: November 2021
View article titled, Metallic capped quasi-two-dimensional electron gas in a SrTiO<sub>3</sub>-based heterostructure
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Journal Articles

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Trung Huu Nguyen, Tokio Takahashi, Hiroshi Chonan, Hoang Van Nguyen, Hisashi Yamada, Toshikazu Yamada, Mitsuaki Shimizu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 143503 (2021)
https://doi.org/10.1063/5.0064935
Published: October 2021
View article titled, Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel
Open the PDF for Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel in another window
Journal Articles

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Ping Wang, Ding Wang, Boyu Wang, Subhajit Mohanty, Sandra Diez, Yuanpeng Wu, Yi Sun, Elaheh Ahmadi, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 082101 (2021)
https://doi.org/10.1063/5.0055851
Published: August 2021
View article titled, N-polar ScAlN and HEMTs grown by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique

Tianye Niu, Natalia Morais, Boqi Qiu, Naomi Nagai, Ya Zhang, Yasuhiko Arakawa, Kazuhiko Hirakawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 041104 (2021)
https://doi.org/10.1063/5.0058260
Published: July 2021
View article titled, GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique
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Includes: Supplementary data
Journal Articles

Ultraviolet-induced oxygen vacancy in SrTiO3 polycrystalline

Manlika Sriondee, Ooraphan Chirayutthanasak, Nant Nammahachak, Tanachat Eknapakul, Hideki Nakajima, Worawat Meevasana, Sutatch Ratanaphan
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 221602 (2021)
https://doi.org/10.1063/5.0048137
Published: June 2021
View article titled, Ultraviolet-induced oxygen vacancy in SrTiO<sub>3</sub> polycrystalline
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Journal Articles

2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 222103 (2021)
https://doi.org/10.1063/5.0050584
Published: June 2021
View article titled, 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
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Journal Articles

Two-dimensional electron systems and interfacial coupling in LaCrO3/KTaO3 heterostructures

Athby H. Al-Tawhid, Divine P. Kumah, Kaveh Ahadi
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 192905 (2021)
https://doi.org/10.1063/5.0049119
Published: May 2021
View article titled, Two-dimensional electron systems and interfacial coupling in LaCrO<sub>3</sub>/KTaO<sub>3</sub> heterostructures
Open the PDF for Two-dimensional electron systems and interfacial coupling in LaCrO<sub>3</sub>/KTaO<sub>3</sub> heterostructures in another window
Includes: Supplementary data