1-20 of 842
Two-dimensional electron gas
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation

Editor’s PickAvailable to Purchase
Yu-Ting Chen, Ching-Hsueh Chiu, Lu-Hsun Chen, Chuan-Hsien Li, Chii-Bin Wu, Chi-Tsu Yuan, Wen-Yu Wen, Chiashain Chuang, Dung-Sheng Tsai, Yueh-Chien Lee, Hertz Hsu, Wei Jen Hsueh, Ji-Lin Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 222105 (2025)
https://doi.org/10.1063/5.0260325
Published: June 2025
View articletitled, Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation
Open the PDF for Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation in another window
Journal Articles

Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates

Available to Purchase
Yu-Hsin Chen, Jimy Encomendero, Chuan F. C. Chang, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 202101 (2025)
https://doi.org/10.1063/5.0264000
Published: May 2025
View articletitled, Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates
Open the PDF for Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates in another window
Journal Articles

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)

Available to Purchase
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152103 (2025)
https://doi.org/10.1063/5.0256300
Published: April 2025
View articletitled, Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)
Open the PDF for Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV) in another window
Journal Articles

High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation

Available to Purchase
J. He, Z. Cheng, S. Xie, C. Mi, X. Wu, L. Zhang, Y. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143507 (2025)
https://doi.org/10.1063/5.0260480
Published: April 2025
View articletitled, High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
Open the PDF for High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation in another window
Journal Articles

Electrically tunable nonvolatile 2D van der Waals p–n heterostructures based on GeSe-quasi 2D electron gas on the SrTiO3 surface

Available to Purchase
Hu Sun, Junhao Ding, Run Zhao, Ju Gao, Guozhen Liu, Jie Qiu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 111603 (2025)
https://doi.org/10.1063/5.0258461
Published: March 2025
View articletitled, Electrically tunable nonvolatile 2D van der Waals p–n heterostructures based on GeSe-quasi 2D electron gas on the SrTiO3 surface
Open the PDF for Electrically tunable nonvolatile 2D van der Waals p–n heterostructures based on GeSe-quasi 2D electron gas on the SrTiO3 surface in another window
Journal Articles

Spin-to-charge conversion at KTaO3(111) interfaces

FeaturedAvailable to Purchase
Athby H. Al-Tawhid, Rui Sun, Andrew H. Comstock, Divine P. Kumah, Dali Sun, Kaveh Ahadi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 091601 (2025)
https://doi.org/10.1063/5.0247001
Published: March 2025
View articletitled, Spin-to-charge conversion at KTaO3(111) interfaces
Open the PDF for Spin-to-charge conversion at KTaO3(111) interfaces in another window
Journal Articles

Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates

Available to Purchase
Hong Yan, Zhaoting Zhang, Zhi Shiuh Lim, Shengwei Zeng, Jijun Yun, Shuanhu Wang, Yupu Zhang, Kexin Jin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 071604 (2025)
https://doi.org/10.1063/5.0256731
Published: February 2025
View articletitled, Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates
Open the PDF for Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates in another window
Journal Articles

Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits

Available to Purchase
Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, Jiun-Yun Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 063502 (2025)
https://doi.org/10.1063/5.0245929
Published: February 2025
View articletitled, Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits
Open the PDF for Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits in another window
Journal Articles

The interfacial trapped charge of quintuple-layers Al2O3 induced by point defect

Available to Purchase
Xinli Wang, Zhentao Fu, Peng-Fei Liu, Bao-Tian Wang, Wen Yin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043504 (2025)
https://doi.org/10.1063/5.0234852
Published: January 2025
View articletitled, The interfacial trapped charge of quintuple-layers Al2O3 induced by point defect
Open the PDF for The interfacial trapped charge of quintuple-layers Al2O3 induced by point defect in another window
Journal Articles

Charge-to-spin conversion at argon ion milled SrTiO3/NiFe hetero-interfaces

Available to Purchase
Amrendra Kumar, Utkarsh Shashank, Suman Kumar Maharana, John Rex Mohan, Joseph Vimal Vas, Surbhi Gupta, Hironori Asada, Rafal E. Dunin-Borkowski, Yasuhiro Fukuma, Rohit Medwal
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 032401 (2025)
https://doi.org/10.1063/5.0238345
Published: January 2025
View articletitled, Charge-to-spin conversion at argon ion milled SrTiO3/NiFe hetero-interfaces
Open the PDF for Charge-to-spin conversion at argon ion milled SrTiO3/NiFe hetero-interfaces in another window
Journal Articles

Recent progress on quantum Hall effect in unconventional material systems

Editor’s PickAvailable to Purchase
Weideng Sun, Zhong Wan, Qi Qian, Gang Qiu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 020501 (2025)
https://doi.org/10.1063/5.0245526
Published: January 2025
View articletitled, Recent progress on quantum Hall effect in unconventional material systems
Open the PDF for Recent progress on quantum Hall effect in unconventional material systems in another window
Journal Articles

Modulation of the 2DEGs mediated by 3d-4f exchange interaction via the stacking sequences

Available to Purchase
Zeguo Lin, Zhaoqing Ding, Zhen Wang, Mingyu Yang, Xiaofeng Wu, Lifen Wang, Xiaoran Liu, Fang Yang, Jiandong Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 261601 (2024)
https://doi.org/10.1063/5.0241147
Published: December 2024
View articletitled, Modulation of the 2DEGs mediated by 3d-4f exchange interaction via the stacking sequences
Open the PDF for Modulation of the 2DEGs mediated by 3d-4f exchange interaction via the stacking sequences in another window
Journal Articles

Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer

Available to Purchase
Yuhao Yin, Haiyang Zhao, Rong Liu, Shizhao Fan, Jiandong Sun, Hua Qin, Helun Song, Jiadong Li, Shitao Dong, Qian Sun, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192103 (2024)
https://doi.org/10.1063/5.0234624
Published: November 2024
View articletitled, Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer
Open the PDF for Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer in another window
Journal Articles

Discovering the incorporation limits for wurtzite AlPyN1 − y grown on GaN by metalorganic vapor phase epitaxy

Editor’s PickAvailable to Purchase
Xu Yang, Yuta Furusawa, Emi Kano, Nobuyuki Ikarashi, Hiroshi Amano, Markus Pristovsek
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 132102 (2024)
https://doi.org/10.1063/5.0225115
Published: September 2024
View articletitled, Discovering the incorporation limits for wurtzite AlPyN1 − y grown on GaN by metalorganic vapor phase epitaxy
Open the PDF for Discovering the incorporation limits for wurtzite AlPyN1 − y grown on GaN by metalorganic vapor phase epitaxy in another window
Journal Articles

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Open Access
A. Papamichail, A. R. Persson, S. Richter, V. Stanishev, N. Armakavicius, P. Kühne, S. Guo, P. O. Å. Persson, P. P. Paskov, N. Rorsman, V. Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123505 (2024)
https://doi.org/10.1063/5.0218911
Published: September 2024
View articletitled, Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Open the PDF for Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties in another window
Journal Articles

Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing

Available to Purchase
Dmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, Arthur G. Pogosov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112103 (2024)
https://doi.org/10.1063/5.0230437
Published: September 2024
View articletitled, Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing
Open the PDF for Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing in another window
Journal Articles

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Editor’s PickAvailable to Purchase
Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
https://doi.org/10.1063/5.0197849
Published: July 2024
View articletitled, Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
Open the PDF for Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices in another window
Journal Articles

Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Available to Purchase
S. Yamada, A. Fujimoto, S. Yagi, H. Narui, E. Yamaguchi, Y. Imanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 262102 (2024)
https://doi.org/10.1063/5.0208784
Published: June 2024
View articletitled, Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Open the PDF for Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures in another window
Journal Articles

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Available to Purchase
E. Annelise Bergeron, F. Sfigakis, A. Elbaroudy, A. W. M. Jordan, F. Thompson, George Nichols, Y. Shi, Man Chun Tam, Z. R. Wasilewski, J. Baugh
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 222103 (2024)
https://doi.org/10.1063/5.0204063
Published: May 2024
View articletitled, High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Open the PDF for High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells in another window
Journal Articles

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Available to Purchase
Huaqian Leng, Kunyao Xu, Hanyue Tian, Yongheng He, Yan Zhao, Minghui Xu, Xiaojiang Yu, Mark B. H. Breese, Hui Zhang, Zhengtai Liu, Dawei Shen, Xiaoqiang Wu, Jiabao Yi, Liang Qiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181604 (2024)
https://doi.org/10.1063/5.0202403
Published: May 2024
View articletitled, Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces
Open the PDF for Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces in another window