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Journal Articles

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Editor’s Pick
Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
https://doi.org/10.1063/5.0197849
Published: July 2024
View article titled, Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
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Journal Articles

Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

S. Yamada, A. Fujimoto, S. Yagi, H. Narui, E. Yamaguchi, Y. Imanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 262102 (2024)
https://doi.org/10.1063/5.0208784
Published: June 2024
View article titled, Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
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Journal Articles

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

E. Annelise Bergeron, F. Sfigakis, A. Elbaroudy, A. W. M. Jordan, F. Thompson, George Nichols, Y. Shi, Man Chun Tam, Z. R. Wasilewski, J. Baugh
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 222103 (2024)
https://doi.org/10.1063/5.0204063
Published: May 2024
View article titled, High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
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Journal Articles

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Huaqian Leng, Kunyao Xu, Hanyue Tian, Yongheng He, Yan Zhao, Minghui Xu, Xiaojiang Yu, Mark B. H. Breese, Hui Zhang, Zhengtai Liu, Dawei Shen, Xiaoqiang Wu, Jiabao Yi, Liang Qiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181604 (2024)
https://doi.org/10.1063/5.0202403
Published: May 2024
View article titled, Competing conduction mechanisms for two-dimensional electron gas at LaTiO<sub>3</sub>/SrTiO<sub>3</sub> heterointerfaces
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Journal Articles

2D electron gas formation on InAs wurtzite nanosheet surfaces

S. Benter, M. Bianchi, D. Pan, J. Zhao, H. Q. Xu, R. Timm, Ph. Hofmann, A. Mikkelsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153104 (2024)
https://doi.org/10.1063/5.0200217
Published: April 2024
View article titled, 2D electron gas formation on InAs wurtzite nanosheet surfaces
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Includes: Supplementary data
Journal Articles

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

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Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152111 (2024)
https://doi.org/10.1063/5.0190822
Published: April 2024
View article titled, Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
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Includes: Supplementary data
Journal Articles

Intrinsic magnetism in KTaO3 heterostructures

Patrick W. Krantz, Alexander Tyner, Pallab Goswami, Venkat Chandrasekhar
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 093102 (2024)
https://doi.org/10.1063/5.0189956
Published: February 2024
View article titled, Intrinsic magnetism in KTaO<sub>3</sub> heterostructures
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Includes: Supplementary data
Journal Articles

A circular photogalvanic effect in two-dimensional electron gas on the surface of SrTiO3

Mahiro Yamamoto, Taiki Nishijima, Ryo Ohshima, Yuichiro Ando, Masashi Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 082401 (2024)
https://doi.org/10.1063/5.0190118
Published: February 2024
View article titled, A circular photogalvanic effect in two-dimensional electron gas on the surface of SrTiO<sub>3</sub>
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Journal Articles

Photoelectric properties of two-dimensional electron gas at the (Ga0.5Al0.5)2O3/SrTiO3 heterointerfaces

S. L. Li, B. Kong, C. C. Xiao, K. X. Jin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 051603 (2024)
https://doi.org/10.1063/5.0187223
Published: February 2024
View article titled, Photoelectric properties of two-dimensional electron gas at the (Ga<sub>0.5</sub>Al<sub>0.5</sub>)<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> heterointerfaces
Open the PDF for Photoelectric properties of two-dimensional electron gas at the (Ga<sub>0.5</sub>Al<sub>0.5</sub>)<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> heterointerfaces in another window
Includes: Supplementary data
Journal Articles

Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb2

Yun Suk Eo, Keenan Avers, Jarryd A. Horn, Hyeok Yoon, Shanta R. Saha, Alonso Suarez, Michael S. Fuhrer, Johnpierre Paglione
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 233102 (2023)
https://doi.org/10.1063/5.0148249
Published: June 2023
View article titled, Extraordinary bulk-insulating behavior in the strongly correlated materials FeSi and FeSb<sub>2</sub>
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Includes: Supplementary data
Journal Articles

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Editor’s Pick
R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 172103 (2023)
https://doi.org/10.1063/5.0149550
Published: April 2023
View article titled, Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures
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Includes: Supplementary data
Journal Articles

Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

Eric W. Blanton, Timothy A. Prusnick, Andrew J. Green, Nicholas Glavin, Michael Snure
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173502 (2023)
https://doi.org/10.1063/5.0132472
Published: April 2023
View article titled, Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures
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Includes: Supplementary data
Journal Articles

Realization of independent contacts in barrier-separated InAs/GaSb quantum wells

Xingjun Wu, Jianhuan Wang, Miaoling Huang, Shili Yan, Rui-Rui Du
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 122102 (2023)
https://doi.org/10.1063/5.0133795
Published: March 2023
View article titled, Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
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Includes: Supplementary data
Journal Articles

Spin-relaxation mechanisms in InAs quantum well heterostructures

J. D. S. Witt, S. J. Pauka, G. C. Gardner, S. Gronin, T. Wang, C. Thomas, M. J. Manfra, D. J. Reilly, M. C. Cassidy
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 083101 (2023)
https://doi.org/10.1063/5.0135297
Published: February 2023
View article titled, Spin-relaxation mechanisms in InAs quantum well heterostructures
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Includes: Supplementary data
Journal Articles

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

E. Annelise Bergeron, F. Sfigakis, Y. Shi, George Nichols, P. C. Klipstein, A. Elbaroudy, Sean M. Walker, Z. R. Wasilewski, J. Baugh
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 012103 (2023)
https://doi.org/10.1063/5.0126704
Published: January 2023
View article titled, Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
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Includes: Supplementary data
Journal Articles

Tunable interface states driven by ferroelectric polarization discontinuity in BiFeO3-based superlattice

Sa Zhang, Baishun Yang, Zijiang Liu, Xiaotao Zu, David O. Scanlon, Bing Huang, Liang Qiao, Haiyan Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 221601 (2022)
https://doi.org/10.1063/5.0098699
Published: November 2022
View article titled, Tunable interface states driven by ferroelectric polarization discontinuity in BiFeO<sub>3</sub>-based superlattice
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Includes: Supplementary data
Journal Articles

In situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas

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Ting-Ting Wang, Sining Dong, Chong Li, Wen-Cheng Yue, Yang-Yang Lyu, Chen-Guang Wang, Chang-Kun Zeng, Zixiong Yuan, Wei Zhu, Zhi-Li Xiao, Xiaoli Lu, Bin Liu, Hai Lu, Hua-Bing Wang, Peiheng Wu, Wai-Kwong Kwok, Yong-Lei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 092101 (2022)
https://doi.org/10.1063/5.0097518
Published: August 2022
View article titled, <em>In situ</em> tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
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Includes: Supplementary data
Journal Articles

Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure

Featured
Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 081904 (2022)
https://doi.org/10.1063/5.0101255
Published: August 2022
View article titled, Electrical characterization and extraction of activation energies of the defect states in the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructure
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Includes: Supplementary data
Journal Articles

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Shanjie Li, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, Guoqiang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062101 (2022)
https://doi.org/10.1063/5.0094957
Published: August 2022
View article titled, Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress
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Includes: Supplementary data
Journal Articles

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Editor’s Pick
Philipp Kühne, Nerijus Armakavicius, Alexis Papamichail, Dat Q. Tran, Vallery Stanishev, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 253102 (2022)
https://doi.org/10.1063/5.0087033
Published: June 2022
View article titled, Enhancement of 2DEG effective mass in AlN/Al<sub>0.78</sub>Ga<sub>0.22</sub>N high electron mobility transistor structure determined by THz optical Hall effect
Open the PDF for Enhancement of 2DEG effective mass in AlN/Al<sub>0.78</sub>Ga<sub>0.22</sub>N high electron mobility transistor structure determined by THz optical Hall effect in another window