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Journal Articles

Pseudo-source gated beta-gallium oxide MOSFET

Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Mritunjay Kumar, Glen Isaac Maciel García, Zhiyuan Liu, Na Xiao, Jose Manuel Taboada Vasquez, Xiao Tang, Xiaohang Li

Appl. Phys. Lett. 125, 142104 (2024)

https://doi.org/10.1063/5.0231763

Published: October 2024

View article titled, Pseudo-source gated beta-gallium oxide MOSFET

Journal Articles

High-performance β-Ga₂O₃ Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

MuJun Li, MingHao He, XiaoHui Wang, Yang Jiang, KangYao Wen, FangZhou Du, ChenKai Deng, JiaQi He, Yi Zhang, WenYue Yu, Qing Wang, HongYu Yu

Appl. Phys. Lett. 125, 132101 (2024)

https://doi.org/10.1063/5.0230034

Published: September 2024

View article titled, High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

Journal Articles

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Junyan Zhu, Jihong Ding, Keqing OuYang, Xinbo Zou, Hongping Ma, Liang Li, Debin Zhang, Jianjun Zhou, Yiwu Qiu, Xinjie Zhou, Tao Wang, Wei Huang, David Wei Zhang

Appl. Phys. Lett. 125, 132103 (2024)

https://doi.org/10.1063/5.0222225

Published: September 2024

View article titled, Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Journal Articles

Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate

Yuhao Shi, Guoxin Li, Yuhao He, Zhonghong Guo, Jianbo Shang, Xiaohang Li, Fangliang Gao, Shuti Li

Appl. Phys. Lett. 125, 123501 (2024)

https://doi.org/10.1063/5.0223396

Published: September 2024

View article titled, Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate

Journal Articles

Contact engineering for two-dimensional metal/qHP C₆₀ van der Waals heterostructure

Yutao Liu, Guolin Qian, Songli Dai, Kaiwen Li, Tinghong Gao

Appl. Phys. Lett. 125, 052101 (2024)

https://doi.org/10.1063/5.0220782

Published: July 2024

View article titled, Contact engineering for two-dimensional metal/qHP C60 van der Waals heterostructure

Journal Articles

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP₂S₆ and its device applications

Jialong Qi, Huizhen Han, Shuli Yang, Lili Kang, Huabing Yin, Gaofeng Zhao

Appl. Phys. Lett. 125, 042903 (2024)

https://doi.org/10.1063/5.0219253

Published: July 2024

View article titled, Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Journal Articles

Controllable electrical contact characteristics of graphene/Ga₂X₃ (X = S, Se) ferroelectric heterojunctions

Xianghe Liu, Yuliang Mao

Appl. Phys. Lett. 125, 043102 (2024)

https://doi.org/10.1063/5.0220466

Published: July 2024

View article titled, Controllable electrical contact characteristics of graphene/Ga2X3 (X = S, Se) ferroelectric heterojunctions

Journal Articles

Modulate the work function of MXene in MXene/InGaN heterojunction for visible light photodetector

Ququ Hao, Liang Chen, Wenliang Wang, Guoqiang Li

Appl. Phys. Lett. 125, 012106 (2024)

https://doi.org/10.1063/5.0217557

Published: July 2024

View article titled, Modulate the work function of MXene in MXene/InGaN heterojunction for visible light photodetector

Journal Articles

Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs

Dong Li, Ruijuan Qi, Pengfei Zhu, Jun Wang, Jinzhong Zhang, Jun Li, Longhui Zeng, Mengjiao Li, Zhigao Hu

Appl. Phys. Lett. 124, 213501 (2024)

https://doi.org/10.1063/5.0197266

Published: May 2024

View article titled, Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs

Includes: Supplementary data

Journal Articles

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao

Appl. Phys. Lett. 124, 173506 (2024)

https://doi.org/10.1063/5.0189890

Published: April 2024

View article titled, Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Journal Articles

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

Huake Su, Tao Zhang, Shengrui Xu, Hongchang Tao, Yuan Gao, Xu Liu, Lei Xie, Peng Xiang, Kai Cheng, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 124, 162102 (2024)

https://doi.org/10.1063/5.0187064

Published: April 2024

View article titled, An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Journal Articles

Origin of near-failure in Au contacts to polycrystalline β-Ga₂O₃ at high temperatures using interfacial studies

Damanpreet Kaur, Rohit Dahiya, Shivani, Mukesh Kumar

Appl. Phys. Lett. 124, 151601 (2024)

https://doi.org/10.1063/5.0198669

Published: April 2024

View article titled, Origin of near-failure in Au contacts to polycrystalline β-Ga2O3 at high temperatures using interfacial studies

Includes: Supplementary data

Journal Articles

Interface engineering by constructing vertical junction for reduced noise and improved sensitivity in 2D photodetector

Yani Yang, Xueming Li, Jianming Huang, Ziqiao Wu, Zhidong Pan, Yiming Sun, Tao Zheng, Xueting Liu, Ling Li, Jielian Zhang, Yujue Yang, Huafeng Dong, Wenbo Xiao, Nengjie Huo

Appl. Phys. Lett. 124, 103501 (2024)

https://doi.org/10.1063/5.0200838

Published: March 2024

View article titled, Interface engineering by constructing vertical junction for reduced noise and improved sensitivity in 2D photodetector

Includes: Supplementary data

Journal Articles

Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method

Wen Zhu, Yida Li, Xuewei Feng

Appl. Phys. Lett. 124, 073101 (2024)

https://doi.org/10.1063/5.0189250

Published: February 2024

View article titled, Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method

Journal Articles

Self-rectifying resistive switching in MAPbI₃-based memristor device

Phu-Quan Pham, Truc-Quyen Thi Vo, Duy Khanh Le, Chuong Thanh Huynh, Tung Thanh Ngo, Phuong Tuyet Nguyen, Anh Tuan Thanh Pham, Nam Hoang Vu, Thang Bach Phan, Yoshiyuki Kawazoe, Ngoc Kim Pham

Appl. Phys. Lett. 124, 051601 (2024)

https://doi.org/10.1063/5.0178032

Published: January 2024

View article titled, Self-rectifying resistive switching in MAPbI3-based memristor device

Includes: Supplementary data

Journal Articles

Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights

You Jin Kim, Mondal Ramit Kumar, Ghimire Mohan Kumar, Munho Kim

Appl. Phys. Lett. 123, 252111 (2023)

https://doi.org/10.1063/5.0178740

Published: December 2023

View article titled, Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights

Journal Articles

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content Al_xGa_1−xN/Al_yGa_1−yN asymmetrical heterostructure

Yan Gu, Jiarui Guo, Bingjie Ye, Xifeng Yang, Feng Xie, Weiying Qian, Xiangyang Zhang, Naiyan Lu, Yushen Liu, Guofeng Yang

Appl. Phys. Lett. 123, 232103 (2023)

https://doi.org/10.1063/5.0170741

Published: December 2023

View article titled, Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Journal Articles

Effect of gamma irradiation on β -Ga₂O₃ vertical Schottky barrier diode

Minwei Liu, Mingzhuo Hua, Xusheng Tian, Zhengxing Wang, Huhu Gao, Wentao Wang, Yiqiang Chen, Chunfu Zhang, Shenglei Zhao, Qian Feng, Yue Hao

Appl. Phys. Lett. 123, 212103 (2023)

https://doi.org/10.1063/5.0170417

Published: November 2023

View article titled, Effect of gamma irradiation on β -Ga2O3 vertical Schottky barrier diode

Journal Articles

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Junye Wu, Zeliang Liao, Haofan Wang, Ping Zou, Renqiang Zhu, Weixiong Cai, Wenrong Zhuang, Yudi Tu, Shaojun Chen, Xinbo Xiong, Hsien-Chin Chiu, Xiaohua Li, Xinke Liu

Appl. Phys. Lett. 123, 213505 (2023)

https://doi.org/10.1063/5.0171406

Published: November 2023

View article titled, Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Journal Articles

Surface scattering-dependent electronic transport in ultrathin scandium nitride films

Debmalya Mukhopadhyay, Sourav Rudra, Bidesh Biswas, Prasanna Das, Bivas Saha

Appl. Phys. Lett. 123, 192101 (2023)

https://doi.org/10.1063/5.0170303

Published: November 2023

View article titled, Surface scattering-dependent electronic transport in ultrathin scandium nitride films

Includes: Supplementary data

NARROW

Topics

Pseudo-source gated beta-gallium oxide MOSFET

High-performance β-Ga₂O₃ Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing

Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate

Contact engineering for two-dimensional metal/qHP C₆₀ van der Waals heterostructure

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP₂S₆ and its device applications

Controllable electrical contact characteristics of graphene/Ga₂X₃ (X = S, Se) ferroelectric heterojunctions

Modulate the work function of MXene in MXene/InGaN heterojunction for visible light photodetector

Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

Origin of near-failure in Au contacts to polycrystalline β-Ga₂O₃ at high temperatures using interfacial studies

Interface engineering by constructing vertical junction for reduced noise and improved sensitivity in 2D photodetector

Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method

Self-rectifying resistive switching in MAPbI₃-based memristor device

Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content Al_xGa_1−xN/Al_yGa_1−yN asymmetrical heterostructure

Effect of gamma irradiation on β -Ga₂O₃ vertical Schottky barrier diode

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Surface scattering-dependent electronic transport in ultrathin scandium nitride films

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