Page 1 | Search Results | Applied Physics Letters

1-20 of 1190

Sort by

Sort Order Select

Journal Articles

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content Al_xGa_1−xN/Al_yGa_1−yN asymmetrical heterostructure

Yan Gu, Jiarui Guo, Bingjie Ye, Xifeng Yang, Feng Xie, Weiying Qian, Xiangyang Zhang, Naiyan Lu, Yushen Liu, Guofeng Yang

Appl. Phys. Lett. 123, 232103 (2023)

https://doi.org/10.1063/5.0170741

Published: December 2023

View article titled, Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Journal Articles

Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

Naizhang Sun, Han Ye, Wenlin Zhou, Ruhao Yang, Ruge Quhe, Yumin Liu, Zhihui Chen

Appl. Phys. Lett. 123, 211107 (2023)

https://doi.org/10.1063/5.0177280

Published: November 2023

View article titled, Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

Journal Articles

Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells

S. Krüger, A. Pfenning, F. Jabeen, F. Hartmann, S. Höfling

Appl. Phys. Lett. 123, 133501 (2023)

https://doi.org/10.1063/5.0162282

Published: September 2023

View article titled, Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells

Journal Articles

Surface-plasmon-enhanced MoS₂ multifunctional optoelectronic memory for emulating human retinal imaging

Chengjie Zhou, Wencheng Niu, Lei Li, Dandan Hao, Hao Huang, Houqiang Fu, Xingqiang Liu, Xuming Zou, Fukai Shan, Zhenyu Yang

Appl. Phys. Lett. 123, 123506 (2023)

https://doi.org/10.1063/5.0168362

Published: September 2023

View article titled, Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging

Includes: Supplementary data

Journal Articles

Improved performance and stability in CH₃NH₃PbI₃/Si heterojunction photodetectors realized by ZIF-67 additive assisted Co ion doping

Peiyu Cheng, Jing Qiu, Tong Zhao, Yuling Wang, Mingming Chen, Huimin Zhang, Yuan Liu, Dawei Cao, Xiuxiu Dong, Quan Wang

Appl. Phys. Lett. 123, 033301 (2023)

https://doi.org/10.1063/5.0156215

Published: July 2023

View article titled, Improved performance and stability in CH3NH3PbI3/Si heterojunction photodetectors realized by ZIF-67 additive assisted Co ion doping

Includes: Supplementary data

Journal Articles

Bandgap engineering and photodetector applications in Bi(I_1-_xBr_x)₃ single crystals

Dan Li, Zhongfei Xu, Ming Yang, Jingyuan Zhong, Weichang Hao, Yi Du, Jincheng Zhuang

Appl. Phys. Lett. 123, 011102 (2023)

https://doi.org/10.1063/5.0150907

Published: July 2023

View article titled, Bandgap engineering and photodetector applications in Bi(I1-xBrx)3 single crystals

Includes: Supplementary data

Journal Articles

Optical rectification Hall effect in a one-dimensional grating

Joseph Plumitallo, Peter Moroshkin, Tetsuyuki Ochiai, Richard M. Osgood, III, Jimmy Xu

Appl. Phys. Lett. 122, 261704 (2023)

https://doi.org/10.1063/5.0151317

Published: June 2023

View article titled, Optical rectification Hall effect in a one-dimensional grating

Includes: Supplementary data

Journal Articles

Photoinduced doping in hexagonal boron nitride

A. Perepeliuc, R. Gujrati, A. Srivastava, P. Vuong, V. Ottapilakkal, P. L. Voss, S. Sundaram, J. P. Salvestrini, A. Ougazzaden

Appl. Phys. Lett. 122, 263503 (2023)

https://doi.org/10.1063/5.0146797

Published: June 2023

View article titled, Photoinduced doping in hexagonal boron nitride

Includes: Supplementary data

Journal Articles

Picosecond trion photocurrent dynamics in FAPbI₃ quantum dot films

Etsuki Kobiyama, Hirokazu Tahara, Masaki Saruyama, Ryota Sato, Toshiharu Teranishi, Yoshihiko Kanemitsu

Appl. Phys. Lett. 122, 252106 (2023)

https://doi.org/10.1063/5.0154927

Published: June 2023

View article titled, Picosecond trion photocurrent dynamics in FAPbI3 quantum dot films

Includes: Supplementary data

Journal Articles

Breaking bandgap limitation: Improved photosensitization in plasmonic-based CsPbBr₃ photodetectors via hot-electron injection

Conghui Qiu, Hao Zhang, Chengcai Tian, Xuan Jin, Qianglin Song, Liye Xu, Mohsin Ijaz, Richard J. Blaikie, Qingyu Xu

Appl. Phys. Lett. 122, 243502 (2023)

https://doi.org/10.1063/5.0152459

Published: June 2023

View article titled, Breaking bandgap limitation: Improved photosensitization in plasmonic-based CsPbBr3 photodetectors via hot-electron injection

Includes: Supplementary data

Journal Articles

In-plane anisotropic photoelectric property of α -In₂Se₃ based phototransistor

Chuanyang Cai, Shiyu Ling, Pengfei Hou

Appl. Phys. Lett. 122, 192101 (2023)

https://doi.org/10.1063/5.0147012

Published: May 2023

View article titled, In-plane anisotropic photoelectric property of α -In2Se3 based phototransistor

Journal Articles

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Xiangming Fang, Zhenglin Jia, Yujie Yang, Ruiming Li, Huiming Huang, Qianqian Lin

Appl. Phys. Lett. 122, 192102 (2023)

https://doi.org/10.1063/5.0150175

Published: May 2023

View article titled, Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Includes: Supplementary data

Journal Articles

Two-dimensional α-In₂Se₃-based ferroelectric semiconductor junction for reconfigurable photodetectors

Xinling Liu, Guangjian Wu, Jinhua Zeng, Chongyang Bai, Wenwu Li, Jianlu Wang, Junhao Chu

Appl. Phys. Lett. 122, 193101 (2023)

https://doi.org/10.1063/5.0149503

Published: May 2023

View article titled, Two-dimensional α-In2Se3-based ferroelectric semiconductor junction for reconfigurable photodetectors

Includes: Supplementary data

Journal Articles

High temperature UV photodetectors based on the negative differential resistance effect of WO₃/diamond PN junctions

Lin Zhang, Shaoheng Cheng, Liying Wang, Kai Pei, Hongdong Li

Appl. Phys. Lett. 122, 182102 (2023)

https://doi.org/10.1063/5.0152394

Published: May 2023

View article titled, High temperature UV photodetectors based on the negative differential resistance effect of WO3/diamond PN junctions

Journal Articles

Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

Eric W. Blanton, Timothy A. Prusnick, Andrew J. Green, Nicholas Glavin, Michael Snure

Appl. Phys. Lett. 122, 173502 (2023)

https://doi.org/10.1063/5.0132472

Published: April 2023

View article titled, Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

Includes: Supplementary data

Journal Articles

Re-emerging photo responsiveness enhancement under compression in (NH₄)₂SeBr₆

Yuzhen Zhang, Guozhao Zhang, Haiwa Zhang, Tianji Ou, Qinglin Wang, Lingrui Wang, Yinwei Li, Cailong Liu

Appl. Phys. Lett. 122, 132101 (2023)

https://doi.org/10.1063/5.0135599

Published: March 2023

View article titled, Re-emerging photo responsiveness enhancement under compression in (NH4)2SeBr6

Includes: Supplementary data

Journal Articles

Phenomenon of photo-regulation on gold/diamond Schottky barriers and its detector applications

Xiaohui Zhang, Kang Liu, Benjian Liu, Bing Dai, Yumin Zhang, Jiaqi Zhu

Appl. Phys. Lett. 122, 062106 (2023)

https://doi.org/10.1063/5.0131898

Published: February 2023

View article titled, Phenomenon of photo-regulation on gold/diamond Schottky barriers and its detector applications

Journal Articles

Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales

Edward Butler-Caddle, Nicholas E. Grant, Sophie L. Pain, John D. Murphy, K. D. G. Imalka Jayawardena, James Lloyd-Hughes

Appl. Phys. Lett. 122, 012101 (2023)

https://doi.org/10.1063/5.0130721

Published: January 2023

View article titled, Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales

Journal Articles

Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution

Danyang Wang, Feiping Zhao, Fen Zhang, Zhangxun Mo, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, Mianzeng Zhong

Appl. Phys. Lett. 121, 061104 (2022)

https://doi.org/10.1063/5.0102450

Published: August 2022

View article titled, Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution

Includes: Supplementary data

Journal Articles

Very long wave infrared quantum cascade detector with a twin-well absorption region

Kai Guo, Yi-Xuan Zhu, Kun Li, Jun-Qi Liu, Shen-Qiang Zhai, Shu-Man Liu, Ning Zhuo, Jin-Chuan Zhang, Li-Jun Wang, Feng-Qi Liu, Xiao-Hua Wang, Zhi-Peng Wei

Appl. Phys. Lett. 121, 061101 (2022)

https://doi.org/10.1063/5.0099583

Published: August 2022

View article titled, Very long wave infrared quantum cascade detector with a twin-well absorption region

NARROW

Topics

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content Al_xGa_1−xN/Al_yGa_1−yN asymmetrical heterostructure

Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells

Surface-plasmon-enhanced MoS₂ multifunctional optoelectronic memory for emulating human retinal imaging

Improved performance and stability in CH₃NH₃PbI₃/Si heterojunction photodetectors realized by ZIF-67 additive assisted Co ion doping

Bandgap engineering and photodetector applications in Bi(I_1-_xBr_x)₃ single crystals

Optical rectification Hall effect in a one-dimensional grating

Photoinduced doping in hexagonal boron nitride

Picosecond trion photocurrent dynamics in FAPbI₃ quantum dot films

Breaking bandgap limitation: Improved photosensitization in plasmonic-based CsPbBr₃ photodetectors via hot-electron injection

In-plane anisotropic photoelectric property of α -In₂Se₃ based phototransistor

Solution-processed bismuth sulfide incorporated with zinc for high-gain and low-noise photodetection

Two-dimensional α-In₂Se₃-based ferroelectric semiconductor junction for reconfigurable photodetectors

High temperature UV photodetectors based on the negative differential resistance effect of WO₃/diamond PN junctions

Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures

Re-emerging photo responsiveness enhancement under compression in (NH₄)₂SeBr₆

Phenomenon of photo-regulation on gold/diamond Schottky barriers and its detector applications

Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales

Ultrasensitive and broadband polarization-sensitive topological insulator photodetector induced by element substitution

Very long wave infrared quantum cascade detector with a twin-well absorption region

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only