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Journal Articles

Patterned discharges for material localized treatment in dielectric barrier discharge with modulated gas gap

Lifang Dong, Lijia Zhang, Yunan He, Ting Wei, Yaohua Li, Cheng Li, Yuyang Pan

Appl. Phys. Lett. 125, 104101 (2024)

https://doi.org/10.1063/5.0219136

Published: September 2024

View article titled, Patterned discharges for material localized treatment in dielectric barrier discharge with modulated gas gap

Journal Articles

Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition

Lakshman Srinivasan, Laurent Invernizzi, Swaminathan Prasanna, Kristaq Gazeli, Nicolas Fagnon, Pere Roca i Cabarrocas, Guillaume Lombardi, Karim Ouaras

Appl. Phys. Lett. 124, 104101 (2024)

https://doi.org/10.1063/5.0192748

Published: March 2024

View article titled, Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition

Journal Articles

Joint measurement of electron density, temperature, and emission spectrum of Nd:YAG laser-produced tin plasma

Y. Pan, K. Tomita, A. Sunahara, A. Sasaki, K. Nishihara

Appl. Phys. Lett. 123, 204103 (2023)

https://doi.org/10.1063/5.0174185

Published: November 2023

View article titled, Joint measurement of electron density, temperature, and emission spectrum of Nd:YAG laser-produced tin plasma

Journal Articles

Microgap breakdown with floating metal rod perturbations

Jiandong Chen, John P. Verboncoeur, Yangyang Fu

Appl. Phys. Lett. 121, 074102 (2022)

https://doi.org/10.1063/5.0104205

Published: August 2022

View article titled, Microgap breakdown with floating metal rod perturbations

Journal Articles

Direct current microplasma formation around microstructure arrays

Yangyang Fu, Huihui Wang, Bocong Zheng, Peng Zhang, Qi Hua Fan, Xinxin Wang, John P. Verboncoeur

Appl. Phys. Lett. 118, 174101 (2021)

https://doi.org/10.1063/5.0046312

Published: April 2021

View article titled, Direct current microplasma formation around microstructure arrays

Journal Articles

Ellipsometric study of the electronic behaviors of titanium-vanadium dioxide (Ti_xV₁₋_xO₂) films for 0 ≤ x ≤ 1 during semiconductive-to-metallic phase transition

Hiroshi Kakiuchida, Masahisa Okada, Yasusei Yamada, Masato Tazawa

Appl. Phys. Lett. 118, 081901 (2021)

https://doi.org/10.1063/5.0029279

Published: February 2021

View article titled, Ellipsometric study of the electronic behaviors of titanium-vanadium dioxide (TixV1−xO2) films for 0 ≤ x ≤ 1 during semiconductive-to-metallic phase transition

Includes: Supplementary data

Journal Articles

Similarity law and frequency scaling in low-pressure capacitive radio frequency plasmas

Yangyang Fu, Bocong Zheng, De-Qi Wen, Peng Zhang, Qi Hua Fan, John P. Verboncoeur

Appl. Phys. Lett. 117, 204101 (2020)

https://doi.org/10.1063/5.0029518

Published: November 2020

View article titled, Similarity law and frequency scaling in low-pressure capacitive radio frequency plasmas

Journal Articles

Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system

Akhil S. Kumar, Navya S. Garigapati, D. Saha

Appl. Phys. Lett. 115, 032105 (2019)

https://doi.org/10.1063/1.5098864

Published: July 2019

View article titled, Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system

Includes: Supplementary data

Journal Articles

High pressure theoretical and experimental analysis of the bandgap of BaMoO₄, PbMoO₄, and CdMoO₄

V. Monteseguro, J. Ruiz-Fuertes, J. Contreras-García, P. Rodríguez-Hernández, A. Muñoz, D. Errandonea

Appl. Phys. Lett. 115, 012102 (2019)

https://doi.org/10.1063/1.5109780

Published: July 2019

View article titled, High pressure theoretical and experimental analysis of the bandgap of BaMoO4, PbMoO4, and CdMoO4

Journal Articles

Delta-doped SrTiO₃ top-gated field effect transistor

Hisashi Inoue, Hyeok Yoon, Tyler A. Merz, Adrian G. Swartz, Seung Sae Hong, Yasuyuki Hikita, Harold Y. Hwang

Appl. Phys. Lett. 114, 231605 (2019)

https://doi.org/10.1063/1.5090269

Published: June 2019

View article titled, Delta-doped SrTiO3 top-gated field effect transistor

Journal Articles

Disappeared deep charge-states transition levels in the p-type intrinsic CsSnCl₃ perovskite

Junyu Zhang, Jie Su, Zhenhua Lin, Mengyu Liu, Jingjing Chang, Yue Hao

Appl. Phys. Lett. 114, 181902 (2019)

https://doi.org/10.1063/1.5090420

Published: May 2019

View article titled, Disappeared deep charge-states transition levels in the p-type intrinsic CsSnCl3 perovskite

Includes: Supplementary data

Journal Articles

Nonlinear XUV-optical transient grating spectroscopy at the Si L_2,3–edge

Appl. Phys. Lett. 114, 181101 (2019)

https://doi.org/10.1063/1.5085413

Published: May 2019

View article titled, Nonlinear XUV-optical transient grating spectroscopy at the Si L2,3–edge

Includes: Supplementary data

Journal Articles

Energy distribution functions for ions from pulsed EUV-induced plasmas in low pressure N₂-diluted H₂ gas

J. Beckers, T. H. M. van de Ven, C. A. de Meijere, R. M. van der Horst, M. van Kampen, V. Y. Banine

Appl. Phys. Lett. 114, 133502 (2019)

https://doi.org/10.1063/1.5091825

Published: April 2019

View article titled, Energy distribution functions for ions from pulsed EUV-induced plasmas in low pressure N2-diluted H2 gas

Journal Articles

Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap

S. P. Svensson, W. A. Beck, W. L. Sarney, D. Donetsky, S. Suchalkin, G. Belenky

Appl. Phys. Lett. 114, 122102 (2019)

https://doi.org/10.1063/1.5081120

Published: March 2019

View article titled, Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap

Journal Articles

Reconfigurable edge-state engineering in graphene using LaAlO₃/SrTiO₃ nanostructures

Jianan Li, Qing Guo, Lu Chen, Shan Hao, Yang Hu, Jen-Feng Hsu, Hyungwoo Lee, Jung-Woo Lee, Chang-Beom Eom, Brian D'Urso, Patrick Irvin, Jeremy Levy

Appl. Phys. Lett. 114, 123103 (2019)

https://doi.org/10.1063/1.5080251

Published: March 2019

View article titled, Reconfigurable edge-state engineering in graphene using LaAlO3/SrTiO3 nanostructures

Includes: Supplementary data

Journal Articles

Longitudinal phonon plasmon mode coupling in β -Ga₂O₃

Mathias Schubert, Alyssa Mock, Rafał Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva

Appl. Phys. Lett. 114, 102102 (2019)

https://doi.org/10.1063/1.5089145

Published: March 2019

View article titled, Longitudinal phonon plasmon mode coupling in β -Ga2O3

Includes: Supplementary data

Journal Articles

Dynamical response of a quantum R–L circuit in the presence of resonant tunneling

Jianzhuang Yin, Li Song, Shuwei Chen, Jie Gao

Appl. Phys. Lett. 114, 092102 (2019)

https://doi.org/10.1063/1.5056206

Published: March 2019

View article titled, Dynamical response of a quantum R–L circuit in the presence of resonant tunneling

Journal Articles

Quantum dots with split enhancement gate tunnel barrier control

S. Rochette, M. Rudolph, A.-M. Roy, M. J. Curry, G. A. Ten Eyck, R. P. Manginell, J. R. Wendt, T. Pluym, S. M. Carr, D. R. Ward, M. P. Lilly, M. S. Carroll, M. Pioro-Ladrière

Appl. Phys. Lett. 114, 083101 (2019)

https://doi.org/10.1063/1.5091111

Published: February 2019

View article titled, Quantum dots with split enhancement gate tunnel barrier control

Includes: Supplementary data

Journal Articles

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al_0.6Ga_0.4N to AlN

Andrew M. Armstrong, Brianna A. Klein, Albert G. Baca, Andrew A. Allerman, Erica A. Douglas, Albert Colon, Vincent M. Abate, Torben R. Fortune

Appl. Phys. Lett. 114, 052103 (2019)

https://doi.org/10.1063/1.5058263

Published: February 2019

View article titled, AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Journal Articles

A low-disorder metal-oxide-silicon double quantum dot

J.-S. Kim, T. M. Hazard, A. A. Houck, S. A. Lyon

Appl. Phys. Lett. 114, 043501 (2019)

https://doi.org/10.1063/1.5075486

Published: January 2019

View article titled, A low-disorder metal-oxide-silicon double quantum dot

Includes: Supplementary data

NARROW

Topics

Patterned discharges for material localized treatment in dielectric barrier discharge with modulated gas gap

Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition

Joint measurement of electron density, temperature, and emission spectrum of Nd:YAG laser-produced tin plasma

Microgap breakdown with floating metal rod perturbations

Direct current microplasma formation around microstructure arrays

Ellipsometric study of the electronic behaviors of titanium-vanadium dioxide (Ti_xV₁₋_xO₂) films for 0 ≤ x ≤ 1 during semiconductive-to-metallic phase transition

Similarity law and frequency scaling in low-pressure capacitive radio frequency plasmas

Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system

High pressure theoretical and experimental analysis of the bandgap of BaMoO₄, PbMoO₄, and CdMoO₄

Delta-doped SrTiO₃ top-gated field effect transistor

Disappeared deep charge-states transition levels in the p-type intrinsic CsSnCl₃ perovskite

Nonlinear XUV-optical transient grating spectroscopy at the Si L_2,3–edge

Energy distribution functions for ions from pulsed EUV-induced plasmas in low pressure N₂-diluted H₂ gas

Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap

Reconfigurable edge-state engineering in graphene using LaAlO₃/SrTiO₃ nanostructures

Longitudinal phonon plasmon mode coupling in β -Ga₂O₃

Dynamical response of a quantum R–L circuit in the presence of resonant tunneling

Quantum dots with split enhancement gate tunnel barrier control

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al_0.6Ga_0.4N to AlN

A low-disorder metal-oxide-silicon double quantum dot

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