1-20 of 68
Diffusion current
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Short-wave infrared position-sensitive detector enabled by lateral diffusion of thermalized carriers in lead salts

Ruihua Ma, Zhe Cheng, Shiteng Wu, Xing Wu, Mengchun Qiu, Li Wang, Qisheng Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112108 (2023)
https://doi.org/10.1063/5.0164229
Published: September 2023
View article titled, Short-wave infrared position-sensitive detector enabled by lateral diffusion of thermalized carriers in lead salts
Open the PDF for Short-wave infrared position-sensitive detector enabled by lateral diffusion of thermalized carriers in lead salts in another window
Includes: Supplementary data
Journal Articles

Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance

A. T. Newell, J. V. Logan, R. A. Carrasco, Z. M. Alsaad, C. P. Hains, J. M. Duran, G. Ariyawansa, G. Balakrishnan, D. Maestas, C. P. Morath, S. D. Hawkins, A. Hendrickson, P. T. Webster
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 171102 (2023)
https://doi.org/10.1063/5.0136409
Published: April 2023
View article titled, Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice <em>n</em>B<em>n</em> detector performance
Open the PDF for Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice <em>n</em>B<em>n</em> detector performance in another window
Journal Articles

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Kai Fu, Ziyi He, Chen Yang, Jingan Zhou, Houqiang Fu, Yuji Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 092103 (2022)
https://doi.org/10.1063/5.0107677
Published: August 2022
View article titled, GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
Open the PDF for GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment in another window
Journal Articles

Terahertz radiation enhancement in gallium arsenide nano-hole array under low power optical pump

Kemeng Wang, Yangfan Gu, Yongchang Lu, Jianqiang Gu, Weili Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 071703 (2022)
https://doi.org/10.1063/5.0099288
Published: August 2022
View article titled, Terahertz radiation enhancement in gallium arsenide nano-hole array under low power optical pump
Open the PDF for Terahertz radiation enhancement in gallium arsenide nano-hole array under low power optical pump in another window
Journal Articles

Bulk photovoltaic effect modulated by ferroelectric polarization back-switching

Yunwei Sheng, Ignasi Fina, Marin Gospodinov, Josep Fontcuberta
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 242901 (2022)
https://doi.org/10.1063/5.0094837
Published: June 2022
View article titled, Bulk photovoltaic effect modulated by ferroelectric polarization back-switching
Open the PDF for Bulk photovoltaic effect modulated by ferroelectric polarization back-switching in another window
Includes: Supplementary data
Journal Articles

Dual-band InGaAs nBn photodetectors at 2 μm

Alper Şahin, Musa Selim Gül, Fatih Uzgur, Serdar Kocaman
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 091104 (2022)
https://doi.org/10.1063/5.0080950
Published: February 2022
View article titled, Dual-band InGaAs <em>nBn</em> photodetectors at 2 <em>μ</em>m
Open the PDF for Dual-band InGaAs <em>nBn</em> photodetectors at 2 <em>μ</em>m in another window
Journal Articles

Switchable photovoltaic response in hexagonal LuMnO3 single crystals

Yunwei Sheng, Ignasi Fina, Marin Gospodinov, Josep Fontcuberta
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 232902 (2021)
https://doi.org/10.1063/5.0053379
Published: June 2021
View article titled, Switchable photovoltaic response in hexagonal LuMnO<sub>3</sub> single crystals
Open the PDF for Switchable photovoltaic response in hexagonal LuMnO<sub>3</sub> single crystals in another window
Includes: Supplementary data
Journal Articles

Analytical model for light modulating impedance spectroscopy (LIMIS) in all-solid-state p-n junction solar cells at open-circuit

Editor’s Pick
Osbel Almora, Daniel Miravet, Gebhard J. Matt, Germà Garcia-Belmonte, Christoph J. Brabec
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 013901 (2020)
https://doi.org/10.1063/1.5139571
Published: January 2020
View article titled, Analytical model for light modulating impedance spectroscopy (LIMIS) in all-solid-state p-n junction solar cells at open-circuit
Open the PDF for Analytical model for light modulating impedance spectroscopy (LIMIS) in all-solid-state p-n junction solar cells at open-circuit in another window
Includes: Supplementary data
Journal Articles

Direct imaging of carrier diffusion length in organic-inorganic perovskites

Editor’s Pick
Zebing Liao, Zeqi Xiao, Mengmeng Yang, Menglong Zhang, Yonghui Zhang, Huaimin Gu, Xiaofang Jiang, Qisheng Wang, Jingbo Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 242104 (2019)
https://doi.org/10.1063/1.5133979
Published: December 2019
View article titled, Direct imaging of carrier diffusion length in organic-inorganic perovskites
Open the PDF for Direct imaging of carrier diffusion length in organic-inorganic perovskites in another window
Includes: Supplementary data
Journal Articles

Nonlinear terahertz emission in the three-dimensional topological insulator Bi2Te3 by terahertz emission spectroscopy

Zhaoji Fang, Hangtian Wang, Xiaojun Wu, Shengyu Shan, Chun Wang, Haihui Zhao, Chenyi Xia, Tianxiao Nie, Jungang Miao, Chao Zhang, Weisheng Zhao, Li Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 191102 (2019)
https://doi.org/10.1063/1.5097335
Published: November 2019
View article titled, Nonlinear terahertz emission in the three-dimensional topological insulator Bi<sub>2</sub>Te<sub>3</sub> by terahertz emission spectroscopy
Open the PDF for Nonlinear terahertz emission in the three-dimensional topological insulator Bi<sub>2</sub>Te<sub>3</sub> by terahertz emission spectroscopy in another window
Journal Articles

Using laser to trigger a large positive magnetoresistive effect in nonmagnetic Si-based metal-oxide-semiconductor structure

Bugao Zou, Peiqi Zhou, Jiaren Zou, Zhikai Gan, Chunlian Mei, Hui Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 241103 (2017)
https://doi.org/10.1063/1.4999533
Published: December 2017
View article titled, Using laser to trigger a large positive magnetoresistive effect in nonmagnetic Si-based metal-oxide-semiconductor structure
Open the PDF for Using laser to trigger a large positive magnetoresistive effect in nonmagnetic Si-based metal-oxide-semiconductor structure in another window
Journal Articles

Influence of interface inhomogeneities in thin-film Schottky diodes

Joshua Wilson, Jiawei Zhang, Yunpeng Li, Yiming Wang, Qian Xin, Aimin Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 213503 (2017)
https://doi.org/10.1063/1.5004247
Published: November 2017
View article titled, Influence of interface inhomogeneities in thin-film Schottky diodes
Open the PDF for Influence of interface inhomogeneities in thin-film Schottky diodes in another window
Journal Articles

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

Fanglin Wang, Haitao Xu, Huixin Huang, Ze Ma, Sheng Wang, Lian-Mao Peng
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 193105 (2017)
https://doi.org/10.1063/1.5003980
Published: November 2017
View article titled, Performance improvement induced by asymmetric Y<sub>2</sub>O<sub>3</sub>-coated device structure to carbon-nanotube-film based photodetectors
Open the PDF for Performance improvement induced by asymmetric Y<sub>2</sub>O<sub>3</sub>-coated device structure to carbon-nanotube-film based photodetectors in another window
Journal Articles

Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

E. A. Kadlec, B. V. Olson, M. D. Goldflam, J. K. Kim, J. F. Klem, S. D. Hawkins, W. T. Coon, M. A. Cavaliere, A. Tauke-Pedretti, T. R. Fortune, C. T. Harris, E. A. Shaner
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 261105 (2016)
https://doi.org/10.1063/1.4973352
Published: December 2016
View article titled, Effects of electron doping level on minority carrier lifetimes in <em>n</em>-type mid-wave infrared InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> type-II superlattices
Open the PDF for Effects of electron doping level on minority carrier lifetimes in <em>n</em>-type mid-wave infrared InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> type-II superlattices in another window
Journal Articles

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Neil Baril, Alexander Brown, Patrick Maloney, Meimei Tidrow, Dmitri Lubyshev, Yueming Qui, Joel M. Fastenau, Amy W. K. Liu, Sumith Bandara
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 122104 (2016)
https://doi.org/10.1063/1.4963069
Published: September 2016
View article titled, Bulk InAs<sub>x</sub>Sb<sub>1-x</sub> nBn photodetectors with greater than 5<em>μ</em>m cutoff on GaSb
Open the PDF for Bulk InAs<sub>x</sub>Sb<sub>1-x</sub> nBn photodetectors with greater than 5<em>μ</em>m cutoff on GaSb in another window
Journal Articles

On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

Gyeong Won Lee, Jong-In Shim, Dong-Soo Shin
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 031104 (2016)
https://doi.org/10.1063/1.4959081
Published: July 2016
View article titled, On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes
Open the PDF for On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes in another window
Journal Articles

Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices

B. V. Olson, E. A. Kadlec, J. K. Kim, J. F. Klem, S. D. Hawkins, A. Tauke-Pedretti, W. T. Coon, T. R. Fortune, E. A. Shaner
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 022105 (2016)
https://doi.org/10.1063/1.4956351
Published: July 2016
View article titled, Contactless measurement of equilibrium electron concentrations in <em>n</em>-type InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> type-II superlattices
Open the PDF for Contactless measurement of equilibrium electron concentrations in <em>n</em>-type InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> type-II superlattices in another window
Journal Articles

Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

B. V. Olson, J. K. Kim, E. A. Kadlec, J. F. Klem, S. D. Hawkins, W. T. Coon, T. R. Fortune, A. Tauke-Pedretti, M. A. Cavaliere, E. A. Shaner
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 252104 (2016)
https://doi.org/10.1063/1.4954649
Published: June 2016
View article titled, Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers
Open the PDF for Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers in another window
Journal Articles

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

B. V. Olson, C. H. Grein, J. K. Kim, E. A. Kadlec, J. F. Klem, S. D. Hawkins, E. A. Shaner
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 261104 (2015)
https://doi.org/10.1063/1.4939147
Published: December 2015
View article titled, Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
Open the PDF for Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices in another window
Journal Articles

Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

Alexander Soibel, Sir B. Rafol, Arezou Khoshakhlagh, Jean Nguyen, Linda Hoglund, Anita M. Fisher, Sam. A. Keo, David Z.-Y. Ting, Sarath D. Gunapala
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 261102 (2015)
https://doi.org/10.1063/1.4938756
Published: December 2015
View article titled, Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector
Open the PDF for Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector in another window