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Journal Articles

Carbon in GaN as a nonradiative recombination center

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Fangzhou Zhao, Hongyi Guan, Mark E. Turiansky, Chris G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 201106 (2025)
https://doi.org/10.1063/5.0267877
Published: May 2025
View articletitled, Carbon in GaN as a nonradiative recombination center
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Journal Articles

Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe

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Liye Cao, Cuiwei Zhang, Yi Yang, Lei Wang, Yanghao Meng, Bixia Gao, Feng Jin, Xinbo Wang, Youguo Shi, Rongyan Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 133104 (2025)
https://doi.org/10.1063/5.0252845
Published: April 2025
View articletitled, Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe
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Journal Articles

Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure

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Yani Li, Heyuan Zheng, Jinhua Li, Kaixi Shi, Xuan Fang, Yunping Lan, Zhenfeng Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083503 (2025)
https://doi.org/10.1063/5.0253662
Published: February 2025
View articletitled, Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure
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Journal Articles

Enhanced performance and long-term stability of 2D photodetectors through hexagonal boron nitride encapsulation

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Huijuan Zhao, Qiyuan Zhou, Yufan Wang, Jiaxuan Wang, Huanlin Ding, Shuhan Li, Xiaohan Guo, Weiqi Wang, Li Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 023101 (2025)
https://doi.org/10.1063/5.0244991
Published: January 2025
View articletitled, Enhanced performance and long-term stability of 2D photodetectors through hexagonal boron nitride encapsulation
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Journal Articles

Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity

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Wenxin Li, Yifu Wang, Guangyang Gu, Fangfang Ren, Dong Zhou, Weizong Xu, Feng Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231104 (2024)
https://doi.org/10.1063/5.0227700
Published: December 2024
View articletitled, Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity
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Journal Articles

Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

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Xi Zheng, Sidan Ai, Tingwei Lu, Yurong Dai, Changdong Tong, Yijun Lu, Zhong Chen, Weijie Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231101 (2024)
https://doi.org/10.1063/5.0226549
Published: December 2024
View articletitled, Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress
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Journal Articles

Doping-free Janus homojunction solar cell with efficiency exceeding 23%

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Lei Li, Zi-Xuan Yang, Tao Huang, Hui Wan, Wu-Yu Chen, Tao Zhang, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 223904 (2024)
https://doi.org/10.1063/5.0232498
Published: November 2024
View articletitled, Doping-free Janus homojunction solar cell with efficiency exceeding 23%
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Journal Articles

Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes

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Xiangwei Qu, Jingrui Ma, Depeng Li, Kai Wang, Xiao Wei Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 113502 (2024)
https://doi.org/10.1063/5.0226752
Published: September 2024
View articletitled, Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes
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Journal Articles

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

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Teng Sun, Yuhao Wang, Junnan Han, Jiaming Chen, Ting Zhu, Dongke Li, Wei Li, Jun Xu, Kunji Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 031105 (2024)
https://doi.org/10.1063/5.0211513
Published: July 2024
View articletitled, High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process
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Journal Articles

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

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Nick Pant, Kyle Bushick, Andrew McAllister, Woncheol Lee, Chris G. Van de Walle, Emmanouil Kioupakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 021109 (2024)
https://doi.org/10.1063/5.0208840
Published: July 2024
View articletitled, Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes
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Journal Articles

Characteristic voltages and times from capacitance–voltage analysis of quantum dot light-emitting diodes

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Xiangwei Qu, Jingrui Ma, Kai Wang, Xiao Wei Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 263503 (2024)
https://doi.org/10.1063/5.0221019
Published: June 2024
View articletitled, Characteristic voltages and times from capacitance–voltage analysis of quantum dot light-emitting diodes
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Journal Articles

Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

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Seyed Ahmad Shahahmadi, Pyry Kivisaari, Benoît Behaghel, Ivan Radevici, Sami Suihkonen, Jani Oksanen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 241105 (2024)
https://doi.org/10.1063/5.0206166
Published: June 2024
View articletitled, Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering
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Journal Articles

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

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K. Shima, K. Kurimoto, Q. Bao, Y. Mikawa, M. Saito, D. Tomida, A. Uedono, S. Ishibashi, T. Ishiguro, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181103 (2024)
https://doi.org/10.1063/5.0208853
Published: April 2024
View articletitled, Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method
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Journal Articles

Enhancing carrier collection in CsPbBr3 solar cells through crystal orientation and defect passivation

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Haotian Dong, Zijian Wang, Qiang Zhang, Zhen Zhang, Zhi Zhu, Xiaopeng Han, Jun Gu, Xiaoyong Wang, Jie Yang, Tao Yu, Chunxiong Bao, Zhigang Zou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173903 (2024)
https://doi.org/10.1063/5.0200839
Published: April 2024
View articletitled, Enhancing carrier collection in CsPbBr3 solar cells through crystal orientation and defect passivation
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Includes: Supplementary data
Journal Articles

Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β -Ga2O3 ultraviolet photodetectors

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Huiping Zhu, Yuanjun Tang, Aoxue Zhong, Lei Wang, Fanyu Liu, Peixiong Zhao, Jie Liu, Lei Shu, Zhenping Wu, Bo Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153505 (2024)
https://doi.org/10.1063/5.0203552
Published: April 2024
View articletitled, Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β -Ga2O3 ultraviolet photodetectors
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Journal Articles

Embedding gold nanoparticles in the SnO2 electron transport layer for boosting flexible perovskite solar cells with the efficiency over 23%

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Caoyu Long, Erming Feng, Jianhui Chang, Yang Ding, Yuanji Gao, Hengyue Li, Biao Liu, Zijian Zheng, Liming Ding, Junliang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123908 (2024)
https://doi.org/10.1063/5.0188072
Published: March 2024
View articletitled, Embedding gold nanoparticles in the SnO2 electron transport layer for boosting flexible perovskite solar cells with the efficiency over 23%
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Includes: Supplementary data
Journal Articles

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

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Jinlong Jiao, Ruoyun Ji, Liqiang Yao, Yingjie Rao, Shaoying Ke, Jianfang Xu, Yibo Zeng, Cheng Li, Guangyang Lin, Wei Huang, Songyan Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 121101 (2024)
https://doi.org/10.1063/5.0192394
Published: March 2024
View articletitled, InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
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Journal Articles

Strain effects on Auger–Meitner recombination in silicon

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Kyle Bushick, Emmanouil Kioupakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 262105 (2023)
https://doi.org/10.1063/5.0176950
Published: December 2023
View articletitled, Strain effects on Auger–Meitner recombination in silicon
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Includes: Supplementary data
Journal Articles

The critical role of temperature-dependent mobilities in determining the open-circuit voltage of bulk-heterojunction organic solar cells

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Yahui Tang, Girish Lakhwani, Christopher R. McNeill
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 213501 (2023)
https://doi.org/10.1063/5.0158833
Published: November 2023
View articletitled, The critical role of temperature-dependent mobilities in determining the open-circuit voltage of bulk-heterojunction organic solar cells
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Includes: Supplementary data
Journal Articles

Practical efficiency limit of laser power converters based on lead halide perovskite

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Chengxia Shen, Xufeng Ling, Yanshuang Li, Shijian Chen, Yehao Deng
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 153301 (2023)
https://doi.org/10.1063/5.0167735
Published: October 2023
View articletitled, Practical efficiency limit of laser power converters based on lead halide perovskite
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Includes: Supplementary data