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Journal Articles

First-principles study of defects and doping limits in CaO

Zhenkun Yuan, Geoffroy Hautier

Appl. Phys. Lett. 124, 232101 (2024)

https://doi.org/10.1063/5.0211707

Published: June 2024

View article titled, First-principles study of defects and doping limits in CaO

Journal Articles

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Balasubramanian Sundarapandian, Dat Q. Tran, Lutz Kirste, Patrik Straňák, Andreas Graff, Mario Prescher, Akash Nair, Mohit Raghuwanshi, Vanya Darakchieva, Plamen P. Paskov, Oliver Ambacher

Appl. Phys. Lett. 124, 182101 (2024)

https://doi.org/10.1063/5.0202161

Published: May 2024

View article titled, Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Includes: Supplementary data

Journal Articles

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae, Jun Suda, Hajime Fujikura

Appl. Phys. Lett. 124, 012105 (2024)

https://doi.org/10.1063/5.0178086

Published: January 2024

View article titled, Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Includes: Supplementary data

Journal Articles

p-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy

Xiaohang Liu, Shengda Fan, Xi Chen, Jingrun Liu, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Zhanguo Chen

Appl. Phys. Lett. 123, 202102 (2023)

https://doi.org/10.1063/5.0176165

Published: November 2023

View article titled, p-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy

Journal Articles

H trapping at the metastable cation vacancy in α -Ga₂O₃ and α -Al₂O₃

Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, Stephen J. Pearton

Appl. Phys. Lett. 120, 192101 (2022)

https://doi.org/10.1063/5.0094707

Published: May 2022

View article titled, H trapping at the metastable cation vacancy in α -Ga2O3 and α -Al2O3

Journal Articles

Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

Bingbing Wang, Yulu Chen, Wulin Tong, Yangzhou Zhou, Jiajia Tao, Zewen Wang, Zuoru Dong, Hong Zhou, Zhanglong Fu, DiXiang Shao, Xiaodong Wang, Juncheng Cao

Appl. Phys. Lett. 120, 071102 (2022)

https://doi.org/10.1063/5.0082048

Published: February 2022

View article titled, Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

Includes: Supplementary data

Journal Articles

High-mobility n⁻-GaN drift layer grown on Si substrates

Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen

Appl. Phys. Lett. 118, 222106 (2021)

https://doi.org/10.1063/5.0049133

Published: June 2021

View article titled, High-mobility n−-GaN drift layer grown on Si substrates

Journal Articles

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Takeshi Kimura (木村健司), Taichiro Konno (今野泰一郎), Hajime Fujikura (藤倉序章)

Appl. Phys. Lett. 118, 182104 (2021)

https://doi.org/10.1063/5.0051692

Published: May 2021

View article titled, Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Journal Articles

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO₂ films

Lutz Baumgarten, Thomas Szyjka, Terence Mittmann, Monica Materano, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller

Appl. Phys. Lett. 118, 032903 (2021)

https://doi.org/10.1063/5.0035686

Published: January 2021

View article titled, Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Includes: Supplementary data

Journal Articles

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments

Geoffrey M. Foster, Andrew Koehler, Mona Ebrish, James Gallagher, Travis Anderson, Brenton Noesges, Leonard Brillson, Brendan Gunning, Karl D. Hobart, Francis Kub

Appl. Phys. Lett. 117, 082103 (2020)

https://doi.org/10.1063/5.0021153

Published: August 2020

View article titled, Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Journal Articles

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

T. Nakano, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama, Y. Kangawa, S. Usami, N. Mayama, K. Toda, A. Tanaka, Y. Honda, H. Amano

Appl. Phys. Lett. 117, 012105 (2020)

https://doi.org/10.1063/5.0010664

Published: July 2020

View article titled, Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

Includes: Supplementary data

Journal Articles

Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

Kevin Lee, YongJin Cho, Leo J. Schowalter, Masato Toita, Huili Grace Xing, Debdeep Jena

Appl. Phys. Lett. 116, 262102 (2020)

https://doi.org/10.1063/5.0010813

Published: June 2020

View article titled, Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

Journal Articles

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors

Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Su Min Hwang, Dushyant Narayan, Jae-Gil Lee, Chadwin D. Young, Luigi Colombo, Gary Goodman, Alan S. Wan, Pil-Ryung Cha, Scott R. Summerfelt, Tamer San, Jiyoung Kim

Appl. Phys. Lett. 115, 182901 (2019)

https://doi.org/10.1063/1.5126144

Published: October 2019

View article titled, Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Journal Articles

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Kazutaka Kanegae, Hajime Fujikura, Yohei Otoki, Taichiro Konno, Takehiro Yoshida, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Appl. Phys. Lett. 115, 012103 (2019)

https://doi.org/10.1063/1.5098965

Published: July 2019

View article titled, Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Journal Articles

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Alexandre Concordel, Gwénolé Jacopin, Bruno Gayral, Núria Garro, Ana Cros, Jean-Luc Rouvière, Bruno Daudin

Appl. Phys. Lett. 114, 172101 (2019)

https://doi.org/10.1063/1.5094627

Published: April 2019

View article titled, Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Journal Articles

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

M. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. Hübers

Appl. Phys. Lett. 114, 092103 (2019)

https://doi.org/10.1063/1.5081030

Published: March 2019

View article titled, High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

Journal Articles

Impurity-derived p-type conductivity in cubic boron arsenide

John L. Lyons, Joel B. Varley, Evan R. Glaser, Jaime A. Freitas, Jr., James C. Culbertson, Fei Tian, Geethal Amila Gamage, Haoran Sun, Hamidreza Ziyaee, Zhifeng Ren

Appl. Phys. Lett. 113, 251902 (2018)

https://doi.org/10.1063/1.5058134

Published: December 2018

View article titled, Impurity-derived p-type conductivity in cubic boron arsenide

Journal Articles

Defect evaluation in strain-relaxed Ge_0.947Sn_0.053 grown on (001) Si

S. Gupta, Y. Shimura, O. Richard, B. Douhard, E. Simoen, H. Bender, O. Nakatsuka, S. Zaima, R. Loo, M. Heyns

Appl. Phys. Lett. 113, 192103 (2018)

https://doi.org/10.1063/1.5048683

Published: November 2018

View article titled, Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Journal Articles

Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides

Hisashi Sumikura, Eiichi Kuramochi, Masaya Notomi

Appl. Phys. Lett. 113, 141101 (2018)

https://doi.org/10.1063/1.5046336

Published: October 2018

View article titled, Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides

Journal Articles

Enhancement of the deep-level emission and its chemical origin in hexagonal boron nitride

Emi Tsushima, Takuya Tsujimura, Takashi Uchino

Appl. Phys. Lett. 113, 031903 (2018)

https://doi.org/10.1063/1.5038168

Published: July 2018

View article titled, Enhancement of the deep-level emission and its chemical origin in hexagonal boron nitride

Includes: Supplementary data

NARROW

Topics

First-principles study of defects and doping limits in CaO

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

p-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy

H trapping at the metastable cation vacancy in α -Ga₂O₃ and α -Al₂O₃

Spectral modulation of blocked-impurity-band hybrid structure terahertz detector

High-mobility n⁻-GaN drift layer grown on Si substrates

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO₂ films

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

Impurity-derived p-type conductivity in cubic boron arsenide

Defect evaluation in strain-relaxed Ge_0.947Sn_0.053 grown on (001) Si

Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides

Enhancement of the deep-level emission and its chemical origin in hexagonal boron nitride

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