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Journal Articles

On the possibility of p-type doping in barium stannate

Joe Willis, Kieran B. Spooner, David O. Scanlon

Appl. Phys. Lett. 123, 162103 (2023)

https://doi.org/10.1063/5.0170552

Published: October 2023

View article titled, On the possibility of p-type doping in barium stannate

Includes: Supplementary data

Journal Articles

The electronic structure of β-TeO₂ as wide bandgap p-type oxide semiconductor

Jueli Shi, Ziqian Sheng, Ling Zhu, Xiangyu Xu, Yun Gao, Dingliang Tang, Kelvin H. L. Zhang

Appl. Phys. Lett. 122, 101901 (2023)

https://doi.org/10.1063/5.0142734

Published: March 2023

View article titled, The electronic structure of β-TeO2 as wide bandgap p-type oxide semiconductor

Includes: Supplementary data

Journal Articles

Role of morphology in defect formation and photo-induced carrier instabilities in amorphous indium oxide

Julia E. Medvedeva

Appl. Phys. Lett. 121, 261902 (2022)

https://doi.org/10.1063/5.0128941

Published: December 2022

View article titled, Role of morphology in defect formation and photo-induced carrier instabilities in amorphous indium oxide

Includes: Supplementary data

Journal Articles

Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives

Yu Chen, S. W. Fan, P. Xu

Appl. Phys. Lett. 121, 252102 (2022)

https://doi.org/10.1063/5.0125543

Published: December 2022

View article titled, Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives

Includes: Supplementary data

Journal Articles

Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA₂Z₄: A bond relaxation investigation

Yonghui Liu, Chen Shao, Wei Yu, Qingzhong Gui, John Robertson, Yuzheng Guo

Appl. Phys. Lett. 121, 244105 (2022)

https://doi.org/10.1063/5.0118029

Published: December 2022

View article titled, Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation

Includes: Supplementary data

Journal Articles

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Partha Mukhopadhyay, Isa Hatipoglu, Ymir K. Frodason, Joel B. Varley, Martin S. Williams, Daniel A. Hunter, Naresh K. Gunasekar, Paul R. Edwards, Robert W. Martin, Feng Wu, Akhil Mauze, James S. Speck, Winston V. Schoenfeld

Appl. Phys. Lett. 121, 111105 (2022)

https://doi.org/10.1063/5.0107557

Published: September 2022

View article titled, Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Includes: Supplementary data

Journal Articles

Mn environment in doped SrTiO₃ revealed by first-principles calculation of hyperfine splittings

Gil M. Repa, Lisa A. Fredin

Appl. Phys. Lett. 121, 022401 (2022)

https://doi.org/10.1063/5.0096788

Published: July 2022

View article titled, Mn environment in doped SrTiO3 revealed by first-principles calculation of hyperfine splittings

Includes: Supplementary data

Journal Articles

On native point defects in ZnSe

Yifeng Wu, Kelsey J. Mirrielees, Douglas L. Irving

Appl. Phys. Lett. 120, 232102 (2022)

https://doi.org/10.1063/5.0092736

Published: June 2022

View article titled, On native point defects in ZnSe

Journal Articles

Structural characters and band offset of Ga₂O₃–Sc₂O₃ alloys

Naxin Zhu, Bowen Wang, Kaichuang Ma, Xiangyi Xue, Jie Su

Appl. Phys. Lett. 120, 053503 (2022)

https://doi.org/10.1063/5.0073999

Published: February 2022

View article titled, Structural characters and band offset of Ga2O3–Sc2O3 alloys

Includes: Supplementary data

Journal Articles

Prospects for n-type conductivity in cubic boron nitride

Mark E. Turiansky, Darshana Wickramaratne, John L. Lyons, Chris G. Van de Walle

Appl. Phys. Lett. 119, 162105 (2021)

https://doi.org/10.1063/5.0069970

Published: October 2021

View article titled, Prospects for n-type conductivity in cubic boron nitride

Journal Articles

Discarded gems: Thermoelectric performance of materials with band gap emerging at the hybrid-functional level

Kristian Berland, Ole Martin Løvvik, Rasmus Tranås

Appl. Phys. Lett. 119, 081902 (2021)

https://doi.org/10.1063/5.0058685

Published: August 2021

View article titled, Discarded gems: Thermoelectric performance of materials with band gap emerging at the hybrid-functional level

Includes: Supplementary data

Journal Articles

Properties of orthorhombic Ga₂O₃ alloyed with In₂O₃ and Al₂O₃

Sierra Seacat, John L. Lyons, Hartwin Peelaers

Appl. Phys. Lett. 119, 042104 (2021)

https://doi.org/10.1063/5.0060801

Published: July 2021

View article titled, Properties of orthorhombic Ga2O3 alloyed with In2O3 and Al2O3

Journal Articles

Theoretical insights to excitonic effect in lead bromide perovskites

Manjari Jain, Deepika Gill, Preeti Bhumla, Pooja Basera, Saswata Bhattacharya

Appl. Phys. Lett. 118, 192103 (2021)

https://doi.org/10.1063/5.0044146

Published: May 2021

View article titled, Theoretical insights to excitonic effect in lead bromide perovskites

Includes: Supplementary data

Journal Articles

Electronic properties and tunability of the hexagonal SiGe alloys

Zhen Wang, Zhaofu Zhang, Sheng Liu, John Robertson, Yuzheng Guo

Appl. Phys. Lett. 118, 172101 (2021)

https://doi.org/10.1063/5.0044901

Published: April 2021

View article titled, Electronic properties and tunability of the hexagonal SiGe alloys

Includes: Supplementary data

Journal Articles

Photocatalytic and photoelectrochemical activities of strained BiVO₄

Minseok Choi

Appl. Phys. Lett. 118, 161901 (2021)

https://doi.org/10.1063/5.0047804

Published: April 2021

View article titled, Photocatalytic and photoelectrochemical activities of strained BiVO4

Journal Articles

Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

Denis O. Demchenko, Michael A. Reshchikov

Appl. Phys. Lett. 118, 142103 (2021)

https://doi.org/10.1063/5.0039388

Published: April 2021

View article titled, Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

Journal Articles

Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX₄, A/B = Zr, Hf, or Ti; X = S, Se, or Te)

Gennevieve Macam, Ali Sufyan, Zhi-Quan Huang, Chia-Hsiu Hsu, Shin-Ming Huang, Hsin Lin, Feng-Chuan Chuang

Appl. Phys. Lett. 118, 111901 (2021)

https://doi.org/10.1063/5.0036838

Published: March 2021

View article titled, Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX4, A/B = Zr, Hf, or Ti; X = S, Se, or Te)

Journal Articles

Dense as diamond: Pn-C₁₀, a superhard sp³ carbon allotrope

Shuaiqi Li, Jiawei Zhang, Junpu Wang, Shixue Guan, Yuanyuan Li

Appl. Phys. Lett. 118, 012107 (2021)

https://doi.org/10.1063/5.0032528

Published: January 2021

View article titled, Dense as diamond: Pn-C10, a superhard sp3 carbon allotrope

Includes: Supplementary data

Journal Articles

Orientation-dependent band offsets between (Al_xGa₁₋_x)₂O₃ and Ga₂O₃

Sai Mu, H. Peelaers, Y. Zhang, M. Wang, Chris G. Van de Walle

Appl. Phys. Lett. 117, 252104 (2020)

https://doi.org/10.1063/5.0036072

Published: December 2020

View article titled, Orientation-dependent band offsets between (AlxGa1−x)2O3 and Ga2O3

Includes: Supplementary data

Journal Articles

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Vilde M. Reinertsen, Philip M. Weiser, Ymir K. Frodason, Marianne E. Bathen, Lasse Vines, Klaus Magnus Johansen

Appl. Phys. Lett. 117, 232106 (2020)

https://doi.org/10.1063/5.0027333

Published: December 2020

View article titled, Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

NARROW

Topics

On the possibility of p-type doping in barium stannate

The electronic structure of β-TeO₂ as wide bandgap p-type oxide semiconductor

Role of morphology in defect formation and photo-induced carrier instabilities in amorphous indium oxide

Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives

Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA₂Z₄: A bond relaxation investigation

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Mn environment in doped SrTiO₃ revealed by first-principles calculation of hyperfine splittings

On native point defects in ZnSe

Structural characters and band offset of Ga₂O₃–Sc₂O₃ alloys

Prospects for n-type conductivity in cubic boron nitride

Discarded gems: Thermoelectric performance of materials with band gap emerging at the hybrid-functional level

Properties of orthorhombic Ga₂O₃ alloyed with In₂O₃ and Al₂O₃

Theoretical insights to excitonic effect in lead bromide perovskites

Electronic properties and tunability of the hexagonal SiGe alloys

Photocatalytic and photoelectrochemical activities of strained BiVO₄

Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX₄, A/B = Zr, Hf, or Ti; X = S, Se, or Te)

Dense as diamond: Pn-C₁₀, a superhard sp³ carbon allotrope

Orientation-dependent band offsets between (Al_xGa₁₋_x)₂O₃ and Ga₂O₃

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

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