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Journal Articles

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga₂O₃(001)

Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, Yoshiyuki Yamashita

Appl. Phys. Lett. 124, 112105 (2024)

https://doi.org/10.1063/5.0198160

Published: March 2024

View article titled, Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Journal Articles

Excellent thermoelectric performance of layered trigonal crystals XPt₂Se₃ (X = K, Rb)

Shuming Zeng, Qian Shen, Jinpeng Yang, Yinchang Zhao, Geng Li, Zonglin Gu, Yusong Tu, Hao Huang

Appl. Phys. Lett. 124, 062202 (2024)

https://doi.org/10.1063/5.0183285

Published: February 2024

View article titled, Excellent thermoelectric performance of layered trigonal crystals XPt2Se3 (X = K, Rb)

Includes: Supplementary data

Journal Articles

Monolayer goldene intercalated in graphene layers

Wenjuan Yuan, Ziliang Deng, Zhouhong Ren, Yongli Shen, Wei Xi, Jun Luo

Appl. Phys. Lett. 117, 233102 (2020)

https://doi.org/10.1063/5.0019487

Published: December 2020

View article titled, Monolayer goldene intercalated in graphene layers

Includes: Supplementary data

Journal Articles

Electrical compensation mechanism in fluorine-doped SnO₂

Youngho Kang, Chris G. Van de Walle

Appl. Phys. Lett. 111, 152107 (2017)

https://doi.org/10.1063/1.4999479

Published: October 2017

View article titled, Electrical compensation mechanism in fluorine-doped SnO2

Journal Articles

Electronic structure of Li₁₊_x[Mn_0.5Ni_0.5]₁₋_xO₂ studied by photoemission and x-ray absorption spectroscopy

Y. Yokoyama, D. Ootsuki, T. Sugimoto, H. Wadati, J. Okabayashi, Xu Yang, Fei Du, Gang Chen, T. Mizokawa

Appl. Phys. Lett. 107, 033903 (2015)

https://doi.org/10.1063/1.4927239

Published: July 2015

View article titled, Electronic structure of Li1+x[Mn0.5Ni0.5]1−xO2 studied by photoemission and x-ray absorption spectroscopy

Journal Articles

Band structure and transport studies of copper selenide: An efficient thermoelectric material

Kriti Tyagi, Bhasker Gahtori, Sivaiah Bathula, S. Auluck, Ajay Dhar

Appl. Phys. Lett. 105, 173905 (2014)

https://doi.org/10.1063/1.4900927

Published: October 2014

View article titled, Band structure and transport studies of copper selenide: An efficient thermoelectric material

Includes: Supplementary data

Journal Articles

Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

Kosuke Suzuki, Shota Takubo, Tadashi Kato, Masatoshi Yamazoe, Kazushi Hoshi, Yoshiya Homma, Masayoshi Itou, Yoshiharu Sakurai, Hiroshi Sakurai

Appl. Phys. Lett. 105, 072412 (2014)

https://doi.org/10.1063/1.4893566

Published: August 2014

View article titled, Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

Journal Articles

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

V. M. Bermudez

Appl. Phys. Lett. 104, 141605 (2014)

https://doi.org/10.1063/1.4871242

Published: April 2014

View article titled, Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

Journal Articles

Theoretical modeling of the complexes of iron impurities and oxygen vacancies in SrTiO₃

Evgeny Blokhin, Eugene Kotomin, Alexei Kuzmin, Juris Purans, Robert Evarestov, Joachim Maier

Appl. Phys. Lett. 102, 112913 (2013)

https://doi.org/10.1063/1.4796182

Published: March 2013

View article titled, Theoretical modeling of the complexes of iron impurities and oxygen vacancies in SrTiO3

Journal Articles

Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

Panagiotis Poulopoulos, Björn Lewitz, Andreas Straub, Spiridon D. Pappas, Sotirios A. Droulias, Sotirios Baskoutas, Paul Fumagalli

Appl. Phys. Lett. 100, 211910 (2012)

https://doi.org/10.1063/1.4720167

Published: May 2012

View article titled, Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

Journal Articles

The enhanced optical conductivity for zigzag-edge graphene nanoribbons with applied gate voltage

Wen-Huan Zhu, Guo-Hui Ding, Bing Dong

Appl. Phys. Lett. 100, 103101 (2012)

https://doi.org/10.1063/1.3692171

Published: March 2012

View article titled, The enhanced optical conductivity for zigzag-edge graphene nanoribbons with applied gate voltage

Journal Articles

Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

Wei Yang, Ding Li, Ningyang Liu, Zhao Chen, Lei Wang, Lei Liu, Lei Li, Chenghao Wan, Weihua Chen, Xiaodong Hu, Weimin Du

Appl. Phys. Lett. 100, 031105 (2012)

https://doi.org/10.1063/1.3678197

Published: January 2012

View article titled, Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

Journal Articles

Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

Ming Gong, Weiwei Zhang, Guang Can Guo, Lixin He

Appl. Phys. Lett. 99, 231106 (2011)

https://doi.org/10.1063/1.3669507

Published: December 2011

View article titled, Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

Journal Articles

Diffusion of E centers in germanium predicted using GGA+U approach

H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl, H. Bracht

Appl. Phys. Lett. 99, 072112 (2011)

https://doi.org/10.1063/1.3625939

Published: August 2011

View article titled, Diffusion of E centers in germanium predicted using GGA+U approach

Journal Articles

Multilayer graphene under vertical electric field

S. Bala Kumar, Jing Guo

Appl. Phys. Lett. 98, 222101 (2011)

https://doi.org/10.1063/1.3595335

Published: May 2011

View article titled, Multilayer graphene under vertical electric field

Journal Articles

Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

Tae Young Lee, Joonyeon Chang, Mark C. Hickey, Hyun Cheol Koo, Hyung-jun Kim, Suk Hee Han, Jagadeesh S. Moodera

Appl. Phys. Lett. 98, 202504 (2011)

https://doi.org/10.1063/1.3589812

Published: May 2011

View article titled, Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

Journal Articles

Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

Q. X. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. X. Fan, D. Zhang, X. Q. Wang, S. T. Liu, B. Shen, R. Ohtani

Appl. Phys. Lett. 98, 181901 (2011)

https://doi.org/10.1063/1.3583461

Published: May 2011

View article titled, Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

Journal Articles

Atomic structure, electronic structure, and band offsets at Ge : GeO : GeO 2 interfaces

L. Lin, K. Xiong, J. Robertson

Appl. Phys. Lett. 97, 242902 (2010)

https://doi.org/10.1063/1.3525371

Published: December 2010

View article titled, Atomic structure, electronic structure, and band offsets at Ge : GeO : GeO 2 interfaces

Journal Articles

Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

J.-B. Laloë, M. C. Hickey, J. Chang, J. S. Moodera

Appl. Phys. Lett. 97, 222105 (2010)

https://doi.org/10.1063/1.3518071

Published: November 2010

View article titled, Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

Journal Articles

Ionization energy levels in C-doped In x Ga 1 − x N alloys

C. Tablero

Appl. Phys. Lett. 97, 192102 (2010)

https://doi.org/10.1063/1.3515854

Published: November 2010

View article titled, Ionization energy levels in C-doped In x Ga 1 − x N alloys

NARROW

Topics

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga₂O₃(001)

Excellent thermoelectric performance of layered trigonal crystals XPt₂Se₃ (X = K, Rb)

Monolayer goldene intercalated in graphene layers

Electrical compensation mechanism in fluorine-doped SnO₂

Electronic structure of Li₁₊_x[Mn_0.5Ni_0.5]₁₋_xO₂ studied by photoemission and x-ray absorption spectroscopy

Band structure and transport studies of copper selenide: An efficient thermoelectric material

Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

Theoretical modeling of the complexes of iron impurities and oxygen vacancies in SrTiO₃

Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

The enhanced optical conductivity for zigzag-edge graphene nanoribbons with applied gate voltage

Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

Diffusion of E centers in germanium predicted using GGA+U approach

Multilayer graphene under vertical electric field

Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure

Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

Atomic structure, electronic structure, and band offsets at Ge : GeO : GeO 2 interfaces

Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

Ionization energy levels in C-doped In x Ga 1 − x N alloys

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