Origin of gap states at initial stage oxidation on Si(001)2×1:H and water adsorption on Si(001)2×1: A theoretical study | Citedby Results | Applied Physics Letters | AIP Publishing

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Origin of gap states at initial stage oxidation on $Si (001)2×1: H$ and water adsorption on $Si (001)2×1:$ A theoretical study

Appl. Phys. Lett. 81, 1827–1829 (2002)

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