Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment | Citedby Results | Applied Physics Letters | AIP Publishing

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Elimination of the weak inversion hump in Si₃N₄/InGaAs (001) gate stacks using an in situ NH₃ pre-treatment

Appl. Phys. Lett. 99, 203504 (2011)

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