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2D Transistors
Semiconducting two-dimensional (2D) materials have proved to be a rich playground for fundamental exploration as well as development of new technologies. One important area of research has been the production of 2D transistor structures that may in their time replace or supplement silicon transistors. In their Perspective "How good are 2D Transistors? An application-specific benchmarking study," authors Hattan Abuzaid, Nicholas X. Williams, and Aaron D. Franklin draw from recently reported advances in the literature, including papers brought together in this collection, and provide an assessment of the field's development.
Guest Editor: Aaron D. Franklin

PERSPECTIVES
How good are 2D transistors? An application-specific benchmarking study
Available to Purchase
Hattan Abuzaid; Nicholas X. Williams; Aaron D. Franklin
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Microscopic origin of inhomogeneous transport in four-terminal tellurene devices
Available to Purchase
Benjamin M. Kupp; Gang Qiu; Yixiu Wang; Clayton B. Casper; Thomas M. Wallis; Joanna M. Atkin; Wenzhuo Wu; Peide D. Ye; Pavel Kabos; Samuel Berweger
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Da Li; Byunghoon Ryu; Xiaogan Liang
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface
Available to Purchase
Kei Takeyama; Rai Moriya; Kenji Watanabe; Satoru Masubuchi; Takashi Taniguchi; Tomoki Machida
ADVANCED MATERIALS
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures
Available to Purchase
Pegah S. Mirabedini; Bishwajit Debnath; Mahesh R. Neupane; P. Alex Greaney; A. Glen Birdwell; Dmitry Ruzmetov; Kevin G. Crawford; Pankaj Shah; James Weil; Tony. G. Ivanov
SURFACES AND INTERFACES
Black phosphorus field effect transistors stable in harsh conditions via surface engineering
Available to Purchase
Bei Jiang; Hao Huang; Rui Chen; Guoli Li; Denis Flandre; Da Wan; Xue Chen; Xingqiang Liu; Cong Ye; Lei Liao
PERSPECTIVES
Empowering 2D nanoelectronics via ferroelectricity
Available to Purchase
Hojoon Ryu; Kai Xu; Dawei Li; Xia Hong; Wenjuan Zhu
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping
Available to Purchase
Guangyao Wang; Wenjie Deng; Xiaoqing Chen; Peng Wang; Yu Xiao; Jingfeng Li; Feihong Chu; Beiyun Liu; Yongfeng Chen; Yue Lu; Manling Sui; Zhihong Liu; Xungang Diao; Hui Yan; Yongzhe Zhang
DEVICE PHYSICS
Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS2
Available to Purchase
Byung Chul Lee; Chul Min Kim; Soojin Kim; Gyu-Tae Kim; Min-Kyu Joo
DEVICE PHYSICS
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
Available to Purchase
Mikaël Cassé; Bruna Cardoso Paz; Gérard Ghibaudo; Thierry Poiroux; Emmanuel Vincent; Philippe Galy; André Juge; Fred Gaillard; Silvano de Franceschi; Tristan Meunier; Maud Vinet
SEMICONDUCTORS
Enhanced thermally aided memory performance using few-layer ReS 2 transistors
Available to Purchase
Natasha Goyal; David M. A. Mackenzie; Vishal Panchal; Himani Jawa; Olga Kazakova; Dirch Hjorth Petersen; Saurabh Lodha
DEVICE PHYSICS
Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel
Open Access
Pin-Chun Shen; Chungwei Lin; Haozhe Wang; Koon Hoo Teo; Jing Kong
SEMICONDUCTORS
Low Schottky barrier contacts to 2H-MoS2 by Sn electrodes
Available to Purchase
Zhonghan Cao; Fanrong Lin; Gu Gong; Hao Chen; Jens Martin
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Characteristics of ferroelectric field effect transistors composed of a ferroelectric Bi3TaTiO9 gate stack and a single-layer MoS2 channel
Available to Purchase
Hyun Wook Shin; Sung-Hoon Lee; Jong Yeog Son
NANOSCALE SCIENCE AND TECHNOLOGY
Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering
Available to Purchase
Siyuan Zhang; Son T. Le; Curt A. Richter; Christina A. Hacker
DEVICE PHYSICS
Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts
Available to Purchase
Woong Choi; Demin Yin; Sooho Choo; Seok-Hwan Jeong; Hyuk-Jun Kwon; Youngki Yoon; Sunkook Kim
SEMICONDUCTORS
Dongjea Seo; Dong Yun Lee; Junyoung Kwon; Jea Jung Lee; Takashi Taniguchi; Kenji Watanabe; Gwan-Hyoung Lee; Keun Soo Kim; James Hone; Young Duck Kim; Heon-Jin Choi
NANOSCALE SCIENCE AND TECHNOLOGY
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors
Available to Purchase
N. Zagni; P. Pavan; M. A. Alam
SURFACES AND INTERFACES
Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3
Available to Purchase
Maokun Wu; Pan Liu; Baojuan Xin; Luyan Li; Hong Dong; Yahui Cheng; Weichao Wang; Feng Lu; Kyeongjae Cho; Wei-Hua Wang; Hui Liu
NANOSCALE SCIENCE AND TECHNOLOGY
John Robertson; Daniel Blomdahl; Kazi Islam; Timothy Ismael; Maxwell Woody; Jacqueline Failla; Michael Johnson; Xiaodong Zhang; Matthew Escarra