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2D Transistors
Semiconducting two-dimensional (2D) materials have proved to be a rich playground for fundamental exploration as well as development of new technologies. One important area of research has been the production of 2D transistor structures that may in their time replace or supplement silicon transistors. In their Perspective "How good are 2D Transistors? An application-specific benchmarking study,"Â authors Hattan Abuzaid, Nicholas X. Williams, and Aaron D. Franklin draw from recently reported advances in the literature, including papers brought together in this collection, and provide an assessment of the field's development.
Guest Editor: Aaron D. Franklin

PERSPECTIVES
Hattan Abuzaid; Nicholas X. Williams; Aaron D. Franklin
10.1063/5.0029712
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Benjamin M. Kupp; Gang Qiu; Yixiu Wang; Clayton B. Casper; Thomas M. Wallis; Joanna M. Atkin; Wenzhuo Wu; Peide D. Ye; Pavel Kabos; Samuel Berweger
10.1063/5.0025955
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Da Li; Byunghoon Ryu; Xiaogan Liang
10.1063/5.0030780
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Kei Takeyama; Rai Moriya; Kenji Watanabe; Satoru Masubuchi; Takashi Taniguchi; Tomoki Machida
10.1063/5.0016468
ADVANCED MATERIALS
Pegah S. Mirabedini; Bishwajit Debnath; Mahesh R. Neupane; P. Alex Greaney; A. Glen Birdwell; Dmitry Ruzmetov; Kevin G. Crawford; Pankaj Shah; James Weil; Tony. G. Ivanov
10.1063/5.0020620
SURFACES AND INTERFACES
Bei Jiang; Hao Huang; Rui Chen; Guoli Li; Denis Flandre; Da Wan; Xue Chen; Xingqiang Liu; Cong Ye; Lei Liao
10.1063/5.0021335
PERSPECTIVES
Hojoon Ryu; Kai Xu; Dawei Li; Xia Hong; Wenjuan Zhu
10.1063/5.0019555
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Guangyao Wang; Wenjie Deng; Xiaoqing Chen; Peng Wang; Yu Xiao; Jingfeng Li; Feihong Chu; Beiyun Liu; Yongfeng Chen; Yue Lu; Manling Sui; Zhihong Liu; Xungang Diao; Hui Yan; Yongzhe Zhang
10.1063/5.0017432
DEVICE PHYSICS
Byung Chul Lee; Chul Min Kim; Soojin Kim; Gyu-Tae Kim; Min-Kyu Joo
10.1063/5.0003041
DEVICE PHYSICS
Mikaël Cassé; Bruna Cardoso Paz; Gérard Ghibaudo; Thierry Poiroux; Emmanuel Vincent; Philippe Galy; André Juge; Fred Gaillard; Silvano de Franceschi; Tristan Meunier; Maud Vinet
10.1063/5.0007100
SEMICONDUCTORS
Natasha Goyal; David M. A. Mackenzie; Vishal Panchal; Himani Jawa; Olga Kazakova; Dirch Hjorth Petersen; Saurabh Lodha
10.1063/1.5126809
DEVICE PHYSICS
Pin-Chun Shen; Chungwei Lin; Haozhe Wang; Koon Hoo Teo; Jing Kong
10.1063/1.5129963
SEMICONDUCTORS
Zhonghan Cao; Fanrong Lin; Gu Gong; Hao Chen; Jens Martin
10.1063/1.5094890
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Hyun Wook Shin; Sung-Hoon Lee; Jong Yeog Son
10.1063/1.5119770
NANOSCALE SCIENCE AND TECHNOLOGY
Siyuan Zhang; Son T. Le; Curt A. Richter; Christina A. Hacker
10.1063/1.5100154
DEVICE PHYSICS
Woong Choi; Demin Yin; Sooho Choo; Seok-Hwan Jeong; Hyuk-Jun Kwon; Youngki Yoon; Sunkook Kim
10.1063/1.5099380
SEMICONDUCTORS
Dongjea Seo; Dong Yun Lee; Junyoung Kwon; Jea Jung Lee; Takashi Taniguchi; Kenji Watanabe; Gwan-Hyoung Lee; Keun Soo Kim; James Hone; Young Duck Kim; Heon-Jin Choi
10.1063/1.5094682
NANOSCALE SCIENCE AND TECHNOLOGY
N. Zagni; P. Pavan; M. A. Alam
10.1063/1.5097828
SURFACES AND INTERFACES
Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3
Maokun Wu; Pan Liu; Baojuan Xin; Luyan Li; Hong Dong; Yahui Cheng; Weichao Wang; Feng Lu; Kyeongjae Cho; Wei-Hua Wang; Hui Liu
10.1063/1.5093712
NANOSCALE SCIENCE AND TECHNOLOGY
John Robertson; Daniel Blomdahl; Kazi Islam; Timothy Ismael; Maxwell Woody; Jacqueline Failla; Michael Johnson; Xiaodong Zhang; Matthew Escarra
10.1063/1.5093039